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arXiv 2025年

作者： Song, Anke Zhang, Jine Chen, Yequan Zhang, Zhizhong Cheng, Xinjuan Xu, Ruijie Zhuang, Wenzhuo Sun, Wenxuan Zhang, Yong Zhang, Xu Chen, Zhongqiang Song, Fengqi Zhang, Yue Zhai, Xuechao Xu, Yongbing Zhao, Weisheng Zhang, Rong Wang, Xuefeng Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials State Key Laboratory of Spintronics Devices and Technologies School of Electronic Science and Engineering Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing210093 China School of Integrated Circuit Science and Engineering Beihang University Beijing100191 China MIIT Key Laboratory of Semiconductor Microstructures and Quantum Sensing School of Physics Nanjing University of Science and Technology Nanjing210094 China National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing210093 China Atom Manufacturing Institute Nanjing211806 China Department of Physics Xiamen University Xiamen361005 China

The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic proximity effect remains quite weak, restricting their practical device applications. Here, we report a large intrinsic AHE with a resistivity of 114 nΩ cm at 5 K in noncoplanar magnetic heterostructures of Cr5Te6/Pt. This is the record-high AHE value among all the magnetic insulators/heavy metal heterostructures. A reversal of the AHE signal occurs due to the reconstruction of Berry curvature at the Fermi level, which is verified by the first-principles calculations. Topological spin textures at the interface are directly visualized via high-magnetic-field magnetic force microscopy, which accounts for the large AHE, as confirmed by the atomic simulations. These findings open a new avenue for exploring the large AHE in heterointerfaces and facilitate the potential applications in topological spintronic devices. © 2025, CC BY.

关键词： Spin Hall effect

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Photonic integrated circuits for Refractive Index-Based Detection in Liquid Chromatography

Photonic Integrated Circuits for Refractive Index-Based Dete...

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IEEE International Conference on Group IV Photonics

作者： J.H. Mendoza-Castro D. Tomasetig S. Schobesberger A.S. Vorobev G. Ricchiuti A. Dabrowska S. Iadanza M. Grande G. Magno L. O’Faolain B. Lendl Institute of Chemical Technologies and Analytics TU Wien Vienna Austria Institute of Applied Synthetic Chemistry TU Wien Vienna Austria Centre for Advanced Photonics and Process Analysis Munster Technological University Cork Ireland Tyndall National Institute Cork Ireland Laboratory of Nano and Quantum Technologies Paul Scherrer Institut Villigen Switzerland Laboratory of Integrated Nanoscale Photonics and Optoelectronics EPFL Lausanne SwitzerlandSchweiz Department of Electrical and Information Engineering Politecnico di Bari Bari Italy

ISBN: (数字)9798331506186

ISBN: (纸本)9798331506193

We demonstrate the on-chip integration of silicon nitride refractive index transducers with microfluidics for refractive index-based detection in liquid chromatography, highlighting the system's potential for creating compact, highly sensitive, and selective sensors capable of analyzing a wide range of complex liquid samples and analytes.

关键词： Spectroscopy Transducers Liquids Refractive index Silicon nitride Sensor phenomena and characterization Silicon photonics System-on-chip Microfluidics Sugar

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Y-Net-ECG: A Multi-Lead informed and interpretable architecture for ECG segmentation across diverse rhythms

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Expert Systems with Applications 2025年 283卷

作者： Liu, Yuhang Zhang, Peng Feng, Xiaoli Hu, Die Zhou, Ding Li, Jingting Huang, Kaibiao Zhao, Yinuo Fu, Zuoming Zheng, Qianqian Ye, Zhigang Wang, Tao Yang, Xiaoyun Lin, Fan Li, Qiang Britton Chance Center for Biomedical Photonics Wuhan National Laboratory for Optoelectronics Huazhong University of Science and Technology Hubei Wuhan430074 China MoE Key Laboratory for Biomedical Photonics Collaborative Innovation Center for Biomedical Engineering School of Engineering Sciences Huazhong University of Science and Technology Hubei Wuhan430074 China Division of Cardiology Department of Internal Medicine Tongji Hospital Tongji Medical College Huazhong University of Science and Technology Hubei Wuhan430074 China School of Integrated Circuit Huazhong University of Science and Technology Hubei Wuhan430074 China Department of Biomedical Engineering Duke University DurhamNC27708 United States Shenzhen Institute of Advanced Technology Shenzhen518067 China Department of Electrical and Computer Engineering Cornell University IthacaNY14853 United States Wuhan United Imaging Surgical Co. Ltd. Hubei Wuhan430074 China

Accurate electrocardiogram (ECG) segmentation is critical for diagnosing and monitoring cardiac conditions. However, the accuracy of ECG segmentation across different heart rhythm types remains a challenge, and its practical utility in disease diagnosis remains to be fully validated. To address these challenges, we propose Y-Net, a deep learning model designed to perform robust ECG segmentation under both single-lead and multi-lead input modes. The model incorporates a dual-branch structure and a two-stage training strategy to ensure adaptability across various clinical scenarios. We evaluated Y-Net on two 12-lead ECG segmentation datasets: LUDB, a public dataset, and RDB, a privately annotated dataset based on public data but annotated specifically by our team. Y-Net demonstrated robust performance across datasets and rhythm types, achieving F1 scores of 99.60% and 99.44% in intra-dataset evaluations, and 99.03% and 98.24% in inter-dataset tests. To improve interpretability, we introduce an intermediate feature visualization method and apply segmentation results directly to atrial fibrillation (AF) detection based on P-wave absence. This morphology-based approach achieves AUCs of 0.946, 0.971, and 0.983 on the PhysioNet2017, CPSC2018, and AFDB datasets, respectively, without the need for additional classifiers. These results highlight the effectiveness and clinical potential of Y-Net as a transparent and adaptable tool for ECG segmentation and interpretation across diverse cardiac rhythms. © 2025 Elsevier Ltd

关键词： Electrocardiography

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Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers

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Chinese Physics Letters 2016年第10期33卷 128-131页

作者：刘毅于涛朱正勇钟汇才朱开贵 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Integrated Circuit Advanced Process Center Institute of MicroelectronicsChinese Academy of Sciences Key Laboratory of Micro-nano Measurement-Manipulation and Physics(Ministry of Education) Beihang University

The dependence of perpendicular magnetic anisotropy （PMA） on the barrier layer MgO thickness in MgO/CoFeB /Ta multilayers is investigated. The results show that the strongest PMA occurs in a small window of about 2 4nm with the increase of MgO thickness from 1-1Onto. The crystalline degree of MgO and the change of interatomic distance along the out-of-plane direction may be the main reasons for the change of PMA in these multilayers. Moreover, the roughnesses of 2- and 4-nm-thick MgO samples are 3.163 and 1.8 nm, respectively, and both the samples show PMA. These results could be used to tune the magnetic characteristic of the ultra thin CoFeB film for future applications in perpendicular magnetic devices.

关键词： PMA MgO of Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers in nm Ta on

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Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

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Chinese Physics B 2016年第11期25卷 558-562页

作者：刘毅朱开贵钟汇才朱正勇于涛马苏德 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education Beihang University Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is *** samples show strong perpendicular magnetic anisotropy（PMA） when the thickness of CoFeB is 0.9 nm and 1.1 *** saturation magnetic moment and interface anisotropy constant are 1566 emu/cm3 and 3.75 erg/cm2,*** magnetic dead layer（MDL） is about 0.23 nm in this ***,strong capping layer thickness dependence is also *** strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 *** maintain PMA,the metal layer could not be too thin or thick in these *** oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.

关键词： anisotropy perpendicular junction annealing annealed thick saturation multilayer responsibility boron

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Voltage contrast defect inspection of contacts and vias for quarter micron devices

Voltage contrast defect inspection of contacts and vias for ...

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1999 International Microprocesses and Nanotechnology Conference

作者： Yamazaki, Yuichiro Hayashi, Hiroyuki Miyoshi, Motosuke Toshiba Corp. Integrated Circuit Advanced Process Engineering Dept. 8 Shinsugita-cho Isogo-ku Yokohama235-8522 Japan

ISBN: (纸本)4930813972

Wafer inspection techniques, which mainly detect the pattern defects and particles using the optical system, have been widely adopted in the ULSI manufacturing process for a process optimization and a process and field level monitoring. However, with the recent aggressive scaling of the ULSI design rule, a capture rate of the killer defects by the conventional optical inspection system is being degraded because of the spatial resolution limitation and the increase of invisible defect contribution. Especially, the detection of invisible killer defects such as an electric contact failures, open and short failures, which can not be detected by the optical inspection system, is being strongly required. In recent studies, these kinds of defect were tried to be detected using the voltage contrast image of the scanning electron microscope (SEM) technique. Therefore, these are called as "voltage contrast defects". In this paper, we investigated the voltage contrast defect detection focusing on the electrical failure of contacts and vias using the SEM technique. © 1999 Japan Soc. Of Applied Physics.

关键词： Defects

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DESIGN OF INTEGRABLE DESENSITIZED FREQUENCY SELECTIVE AMPLIFIERS

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IEEE JOURNAL OF SOLID-STATE circuitS 1966年第1期SC 1卷 29-&页

作者： GAASH, AA PEPPER, RS PEDERSON, DO Integrated Circuit Advanced Development Sprague Electric Company North Adams MA USA Department of Electrical Engineering University of California Berkeley CA USA Electronics Research Laboratory and Department of Electrical Engineering University of California Berkeley CA USA

Synthesis procedures are presented for the synthesis of prototype frequency selective amplifiers suitable for semiconductor integrated circuit realization. Constraints and degrees of freedom imposed by semiconductor integrated passive and active components are incorporated in feedback amplifier designs. In order to achieve desensitized response, first-order pole-sensitivity functions are used in the synthesis. This leads to procedures for the simultaneous realization of prescribed response and response invariance. The procedures require feedback structures with redundant transmission-loops to provide extra degrees of freedom needed in the design. Experimental results from prototype amplifiers are presented.

关键词： integrated circuit synthesis Temperature sensors Semiconductor optical amplifiers Frequency synthesizers Prototypes Network synthesis Resistors Laboratories Associate members Feedback amplifiers

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An investigation of SEM overlay metrology

An investigation of SEM overlay metrology

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1999 International Microprocesses and Nanotechnology Conference

作者： Koike, T. Ikeda, T. Abe, H. Komatsu, F. ULSI Process Engineering Laboratory Microelectronics Engineering Laboratory Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama235-8522 Japan Integrated Circuit Advanced Process Engineering Department Toshiba Corporation 8 Shinsugita-cho Isogo-ku Yokohama235-8522 Japan

We examine the accuracy and precision of SEM-based overlay metrology in the case of marks covered with thick resist film. We measured the overlay error by optimizing beam condition, and compared the results with those... 详细信息

ISBN: (纸本)4930813972

关键词： Nanostructured materials

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Physical Review Letters 2025年第11期134卷 116607-116607页

作者： Zhongfu Li Shiqi Li Bei Yan Hsun-Chi Chan Jing Li Jun Guan Wengang Bi Yuanjiang Xiang Zhen Gao The Chinese University of Hong Kong Shenzhen Guangdong 518172 Peoples’s Republic of China New Cornerstone Science Foundation Department of Physics The University of Hong Kong Pokfulam Road Hong Kong 999077 China Collaborative Innovation Center of Advanced Microstructures and School of Physics Nanjing University Nanjing 210093 China Hubei Province Key Laboratory of Systems Science in Metallurgical Process and College of Science Wuhan University of Science and Technology Wuhan 430081 China School of Physics and Electronics Hunan University Changsha 410082 China State Key Laboratory of Optical Fiber and Cable Manufacture Technology Department of Electronic and Electrical Engineering Guangdong Key Laboratory of Integrated Optoelectronics Intellisense Southern University of Science and Technology Shenzhen 518055 China

Emergent collective modes in lattices give birth to many intriguing physical phenomena in condensed matter physics. Among these collective modes, large-area modes typically feature small-level spacings, while a mode with stable frequency tends to be spatially tightly confined. In this Letter, we theoretically propose and experimentally demonstrate a symmetry-related large-area topological corner mode with a tunable mode area and stable frequency. This mode emerges from the hybridization of the homogeneous Dirac point mode and in-gap topological corner modes. Remarkably, this hybridized mode possesses unique chirality related to the chiral symmetry. We experimentally observe such hybridized mode in a two-dimensional (2D) photonic system and demonstrate its robustness by introducing disorders in the structure. Our findings advance the frontier of higher-order topology research, transitioning it from single-lattice systems to hybridized multilattice systems. These results may support promising potential applications, particularly in vertical-cavity surface-emitting lasers.

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A New Thin Film Growth/Regrowth process Design and Experimental Comparisons with Molecular Dynamic Analyses

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MRS Online Proceedings Library 1992年第1期283卷 615-620页

作者： Takako K. Okada Shigeru Kambayashi Moto Yabuki Yoshitaka Tsunashima Yuichi Mikata Shinji Onga ULSI Research Center Toshiba Corporation Kawasaki Japan Integrated Circuit Advanced Process Engineering Department Toshiba Corporation Japan

A new concept of thin film growth/regrowth process design taking atomic motions into account using molecular dynamics is proposed. In the system, a modified many-body Tersoff-type interatomic potential for silicon has been adopted. The mathematical derivation of higher order derivatives was rigorously treated. Among many applications, the solid phase growth process was studied. It has been found from simulation studies that the solid phase growth of crystalline silicon proceeded along the [110] direction layer by layer. Furthermore, it has been obtained that all the atoms are activated in tin extremely thin amorphous silicon film. Based on simulated results, an experiment using an extremely thin amorphous silicon film was carried out. It has been found that the perfect spherical silicon crystals with a uniform size and spacing can be grown from a thin amorphous silicon film.

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