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International Electron Devices and Materials Symposium, EDMS

作者： S. Ikeda Semiconductor and Integrated Circuit Division Process Engineering Development Department Hitachi and Limited Kodaira Tokyo Japan

A memory cell design and fabrication process for high performance SRAMs are described. Stacked Split Word-Line cell architecture achieves 7.16/spl mu/m/sup 2/ cell area with relaxed 0.4/spl mu/m design rule. Pull-down and access transistors of the memory cell are carefully and independently designed to enhance cell stability. High performance polysilicon thin film transistor is realized by channel polysilicon oxidation and oxygen assisted hydrogen passivation into channel polysilicon. Fabrication process steps are designed to reduce mechanical stress that causes large memory cell leakage and degrades data retention stability.

关键词： Thin film transistors Stability Fabrication Testing process design Stress Low voltage Silicon Substrates Temperature measurement

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Malus-metasurface-assisted polarization multiplexing

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Light(Science & Applications) 2020年第1期9卷 1038-1046页

作者： Liangui Deng Juan Deng Zhiqiang Guan Jin Tao Yang Chen Yan Yang Daxiao Zhang Jibo Tang Zhongyang Li Zile Li Shaohua Yu Guoxing Zheng Hongxing Xu Cheng-Wei Qiu Shuang Zhang Electronic Information School Wuhan University430072 WuhanChina NOEIC State Key Laboratory of Optical Communication Technologies and NetworksWuhan Research Institute of Posts&Telecommunications430074 WuhanChina School of Physics and Technology Wuhan University430072 WuhanChina Department of Electrical and Computer Engineering National University of Singapore4 Engineering Drive 3Singapore 117583Singapore Integrated Circuit Advanced Process Center Institute of MicroelectronicsChinese Academy of Sciences100029 BeijingChina School of Physics&Astronomy University of BirminghamBirmingham B152TTUK

Polarization optics plays a pivotal role in diffractive,refractive,and emerging flat optics,and has been widely employed in contemporary optical industries and daily *** polarization manipulation leads to robust control of the polarization direction of ***,polarization control has been studied largely independent of the phase or intensity of ***,we propose and experimentally validate a Malus-metasurface-assisted paradigm to enable simultaneous and independent control of the intensity and phase properties of light simply by polarization *** orientation degeneracy of the classical Malus’s law implies a new degree of freedom and enables us to establish a one-to-many mapping strategy for designing anisotropic plasmonic nanostructures to engineer the Pancharatnam–Berry phase profile,while keeping the continuous intensity modulation *** proposed Malus metadevice can thus generate a near-field greyscale pattern,and project an independent far-field holographic image using an ultrathin and single-sized *** concept opens up distinct dimensions for conventional polarization optics,which allows one to merge the functionality of phase manipulation into an amplitudemanipulation-assisted optical component to form a multifunctional nano-optical device without increasing the complexity of the *** can empower advanced applications in information multiplexing and encryption,anti-counterfeiting,dual-channel display for virtual/augmented reality,and many other related fields.

关键词： optics enable unchanged

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Organic solar cells: beyond 20%

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Science China Materials 2025年 1-13页

作者： Ma, Ruijie Luo, Zhenghui Zhang, Youdi Zhan, Lingling Jia, Tao Cheng, Pei Yan, Cenqi Fan, Qunping Liu, Shengjian Ye, Long Zhang, Guangye Xu, Xiaopeng Gao, Wei Wu, Yue Wu, Jiaying Li, Yuxiang Liu, Yuhang Liu, Feng Song, Jiali Chen, Haiyang Chen, Weijie Zhang, Xin Liu, Yahui Yuan, Jun Liu, Quan Kan, Zhipeng Yin, Hang Li, Xiaojun Ma, Yunlong Deng, Dan Zhu, Lei Huo, Yong Fan, Baobin Fu, Huiting Liao, Xunfan Hu, Hanlin Li, Chao Yu, Runnan Hu, Huawei Yao, Zhaoyang Cai, Yunhao Qian, Deping Cui, Yong Yao, Huifeng Xu, Bowei Kan, Bin Gao, Ke Duan, Chunhui Hu, Xiaotian Sun, Huiliang School of Chemistry and Chemical Engineering Gannan Normal University Ganzhou 341000 China Department of Electrical and Electronic Engineering Research Institute for Smart Energy (RISE) Guangdong-Hong Kong-Macao (GHM) Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices The Hong Kong Polytechnic University 999077 Hong Kong Guangdong Provincial Key Laboratory of New Energy Materials Service Safety Shenzhen Key Laboratory of New Information Display and Storage Materials College of Materials Science and Engineering Shenzhen University Shenzhen 518060 China Key Laboratory of Advanced Green Functional Materials College of Chemistry Changchun Normal University Changchun 130032 China Key Laboratory of Organosilicon Chemistry and Material Technology Ministry of Education Zhejiang Key Laboratory of Organosilicon Material Technology College of Material Chemistry and Chemical Engineering Hangzhou Normal University Hangzhou 311121 China School of Optoelectronic Engineering Guangdong Polytechnic Normal University Guangzhou 510665 China College of Polymer Science and Engineering National Key Laboratory of Advanced Polymer Materials Sichuan University Chengdu 610065 China State Key Laboratory for Mechanical Behavior of Materials Xi’an Jiaotong University Xi’an 710049 China School of Chemistry Key Laboratory of Electronic Chemicals for Integrated Circuit Packaging South China Normal University (SCNU) Guangzhou 510006 China School of Materials Science and Engineering State Key Laboratory of Advanced Materials for Intelligent Sensing Key Laboratory of Organic Integrated Circuits Ministry of Education Tianjin Key Laboratory of Molecular Optoelectronic Sciences Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) Tianjin University Tianjin 300350 China College of New Materials and New Energies Shenzhen Technology University Shenzhen 518118 China College of Chemical Engineering Sichuan University Chengdu 610065 China Xiame

Organic solar cells (OSCs) have experienced remarkable performance progress up to 20% benchmark power conversion efficiency (PCE) in past years. Considering the <1% initial PCE obtained by OSC decades ago, the milestone of surpassing 20% efficiency is of great significance. Meanwhile, further performance promotion is urgently required for OSCs as other solution-processable photovoltaic technologies are also competitive. This review article aims to demonstrate a comprehensive summary of recent reports on OSCs with over 20% PCE, delving into key strategies including material innovations, multi-component system construction, deposition protocol optimization, solid/solvent additive engineering, as well as hole/electron transport layer development. In addition, this study identifies the next-stage scientific and technological issues that warrant greater attention. These issues are proposed to drive more prosperous research development, particularly in the field of flexible and wearable power suppliers. (Figure presented.) © Science China Press 2025.

关键词： device engineering molecule design opportunities and challenges organic solar cells power conversion efficiency

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Fast optical proximity correction based on graph convolution network 34

Fast optical proximity correction based on graph convolution...

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Optical Microlithography XXXIV 2021

作者： Zhang, Shengen Ma, Xu Zhang, Junbi Chen, Rui Pan, Yihua Yu, Chengzhen Dong, Lisong Wei, Yayi Arce, Gonzalo R. Key Laboratory of Photoelectronic Imaging Technology and System Ministry of Education of China School of Optics and Photonics Beijing Institute of Technology Beijing100081 China Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Department of Electrical and Computer Engineering University of Delaware NewarkDE19716 United States

ISBN: (数字)9781510640603

ISBN: (纸本)9781510640597

Optical proximity correction (OPC) is regarded as one of the most important computational lithography approaches to improve the imaging performance of sub-wavelength lithography process. Traditional OPC methods are computationally intensive to pre-warp the mask pattern based on inverse optimization models. This paper develops a new kind of pixelated OPC method based on an emerging machine learning technique namely graph convolutional network (GCN) to improve the computational efficiency. In the proposed method, the target layout is raster-scanned into pixelated image, and the GCN is used to predict its corresponding OPC solution pixel by pixel. For each layout pixel, we first sub-sample its surrounding geometrical features using an incremental concentric circle sampling method. Then, these sampling points are converted into graph signals. Then, the GCN model is established to process the pre-defined graph signals and predict the central pixel within the sampling region on the OPC pattern. After that, the GCN is moved to predict the OPC solution of the next layout pixel. The proposed OPC method is validated and discussed based on a set of simulations, and is compared with traditional OPC methods. © 2021 SPIE.

关键词： Pixels

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Synthetic Weyl points in plasmonic chain with simultaneous inversion and reflection symmetry breaking

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Physical Review B 2024年第7期110卷 075420-075420页

作者： Huizhou Wu Z. Z. Liu Jun-Jun Xiao College of Electronic and Information Engineering and Shenzhen Engineering Laboratory of Aerospace Detection and Imaging Research Center for Advanced Optics and Photoelectronics Department of Physics College of Science College of Integrated Circuit

Photonic nanoparticle arrays present a unique platform for exploring optical topological phenomena. In this study, we incorporate the concept of synthetic dimensions into the plasmonic system, which allows us to investigate Weyl physics within a chain of metallic nanoparticles. By introducing two extra periodic positional parameters into the chain, we construct a synthetic three-dimensional space that gives rise to synthetic Weyl points (WPs). Our findings reveal that the chain maintains topologically protected edge modes even when the inversion symmetry of the chain is broken. The topological properties of these edge modes are intrinsically linked to the WPs within the synthetic three-dimensional space. However, degenerate edge modes emerge exclusively in chains possessing inversion symmetry. Furthermore, we uncover the bulk-edge correspondence in the chains, yielding a deeper understanding of the topological nature of edge modes in systems without symmetry. Our research not only clarifies the topological origin of a class of edge states within asymmetric nanoparticle chains but also provides perspectives for realizing higher-dimensional topological effects in nanoparticle arrays.

关键词： Topological effects in photonic systems Nanoparticles Weyl semimetal Discrete dipole approximation

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Robustly stable intermediate memory states in HfO_(2)-based ferroelectric field-effect transistors

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Journal of Materiomics 2022年第3期8卷 685-692页

作者： Chen Liu Binjian Zeng Siwei Dai Shuaizhi Zheng Qiangxiang Peng Jinjuan Xiang Jianfeng Gao Jie Zhao Jincheng Zhang Min Liao Yichun Zhou Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education School of Materials Science and EngineeringXiangtan UniversityXiangtan411105China College of Civil Engineering and Mechanics Xiangtan UniversityXiangtan411105China School of Advanced Materials and Nanotechnology Xidian UniversityXi'an710071China Integrated Circuit Advanced Process R&D Center and Institute of Microelectronics of Chinese Academy of Sciences Beijing100029China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an710071China

Multilevel ferroelectric field-effect transistors(FeFETs)integrated with HfO_(2)-based ferroelectric thin films demonstrate tremendous potential in high-speed massive data storage and neuromorphic computing ***,few works have focused on the stability of the multiple memory states in the HfO_(2)-based *** we firstly report the write/read disturb effects on the multiple memory states in the Hf_(0.5)Zr_(0.5)O_(2)(HZO)-based *** multiple memory states in HZO-based FeFETs do not show obvious degradation with the write and read disturb ***,the retention characteristics of the intermediate memory states in HZO-based FeFETs with unsaturated ferroelectric polarizations are better than that of the memory state with saturated ferroelectric *** the deep analysis of the operation principle of in HZO-based FeFETs,we speculate that the better retention properties of intermediate memory states are determined by the less ferroelectric polarization degradation and the weaker ferroelectric polarization *** experimental and theoretical evidences confirm that the long-term stability of the intermediate memory states in HZO-based FeFETs are as robust as that of the saturated memory state,laying a solid foundation for their practical applications.

关键词： Ferroelectric fieldeffect transistors(FeFETs) Hf_(0.5)Zr_(0.5)O_(2)(HZO) Multiple memory states Write/read disturb Retention

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ONO INTERPOLY DIELECTRIC SCALING LIMIT FOR NONVOLATILE MEMORY DEVICES 13

ONO INTERPOLY DIELECTRIC SCALING LIMIT FOR NONVOLATILE MEMOR...

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1993 SYMP ON VERY-LARGE-SCALE-INTEGRATION ( VLSI ) TECHNOLOGY

作者： YAMAGUCHI, Y SAKAGAMI, E ARAI, N SATO, M KAMIYA, E YOSHIKAWA, K MEGURO, H TSUNODA, H MORI, S Semiconductor Device Engineering Laboratory 1 Komukai Toshiba-cho Saiwai-ku Kawasaki 210 Japan Integrated Circuit Advance Process Engineering Department TOSHIBA Corporation 1 Komukai Toshiba-cho Saiwai-ku Kawasaki 210 Japan TOSHIBA Microelectronics Corporation 1 Komukai Toshiba-cho Saiwai-ku Kawasaki 210 Japan

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Design, fabrication and Helium Ion Microscope patterning of suspended nanomechanical graphene structures for NEMS applications

Design, fabrication and Helium Ion Microscope patterning of ...

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International Solid-State Sensors, Actuators and Microsystems Conference

作者： Annamalai, M. Mathew, S. Viswanathan, V. Fang, C. Pickard, D.S. Palaniapan, M. Signal Processing and VLSI Lab Department of Electrical and Computer Engineering National University of Singapore Singapore Singapore Centre for Integrated Circuit Failure Analysis and Reliability Department of Electrical and Computer Engineering National University of Singapore Singapore Singapore Plasmonics and Advanced Imaging Technology Lab Department of Electrical and Computer Engineering National University of Singapore Singapore Singapore

ISBN: (纸本)9781457701573

This paper investigates the potential uses of graphene nanomechanical devices for NEMS applications fabricated using Helium Ion Microscope (HIM). Suspended nanomechanical graphene drum structures of diameter ( 2 - 3 m) and thickness ranging from few atomic layers (10 ) to about 11 nm have been fabricated and characterized using Atomic Force Microscopy (AFM). The initial suspension profile and the thickness of the fabricated structures have been obtained using AFM. FEM results suggest that these structures can vibrate in the range of several MHz. Their small size and the higher operating frequencies make them well suitable for mass sensing applications with sensitivities greater than 1021 g Hz1 which is more than three orders of magnitude improvement over silicon based structures. The initial suspended graphene membranes have been patterned using HIM to obtain multiple z- axis flexures with sub-10nm feature sizes. © 2011 IEEE.

关键词： Graphene

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ONO Interpoly Dielectric Scaling Limit For Non-volatile Memory Devices

ONO Interpoly Dielectric Scaling Limit For Non-volatile Memo...

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Symposium on VLSI Technology

作者： Yamaguchi Sakagami Arai Sato Kamiya Yoshikawa Meguro Tsunoda Mori Semiconductor Device Engineering Laboratory Toshiba Microelectronics Corporation Kawasaki Japan Integrated Circuit Advance Process Engineering Department Toshiba Corporation Japan

ONO(oxide-Nitride-oxide) interpoly dielectric thickness scaling, as well as tunnel oxide scaling, is one of the most important considerations in realizing high density non-volatile memory devices. Interpoly dielectric... 详细信息

关键词： Dielectrics Threshold voltage Degradation Logic gates Transistors Nonvolatile memory Oxidation

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Proximity-induced magnetic order in topological insulator on ferromagnetic semiconductor

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Science China(Information Sciences) 2023年第12期66卷 267-274页

作者： Hangtian WANG Koichi MURATA Weiran XIE Jing LI Jie ZHANG Kang L.WANG Weisheng ZHAO Tianxiao NIE School of Integrated Circuit Science and Engineering and Advanced Innovation Center for Big Data and Brain Computing Beihang University Beihang-Goertek Joint Microelectronics Institute Qingdao Research InstituteBeihang University Department of Electrical Engineering University of California

Introducing magnetic order into topological insulator（TI） to break the time-reversal symmetry can yield numerous fascinating physical phenomena,which brings new hope for the emerging spintronic *** proximity effect is regarded as a promising strategy that could advance the step for realistic application by choosing a suitable ferromagnetic layer with the merits of high Curie temperature and high compatibility with mainstream semiconductor ***,we prepare a Bi2Se3thin film on Sicompatible ferromagnetic semiconductor（FMS） of MnxGe1-xby molecular beam *** integration,the nonmagnetic Bi2Se3exhibits an anomalous Hall signal and a clear weak localization cusp in magnetoresistance until 150 K,confirming that a high-temperature magnetism can be induced by the proximity *** investigation of the magnetoconductance quantitatively indicates that the Bi2Se3conductance suffers a transition from weak antilocalization to weak localization behavior after integrating with MnxGe1-x,and an 80 meV bandgap is predicted to be opened in the surface states in Bi2Se3layer due to the proximityinduced *** results prove that the proximity effect could be an important method to achieve topological magnetism at high temperatures,and reveals its potential for the manipulation of the topological surface states.

关键词： topological insulator ferromagnetic semiconductor proximity effect quantum interference

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