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Nanoporous Carbon Materials Derived from Biomass Precursors:Sustainable Materials for Energy Conversion and Storage

Electrochemical Energy Reviews 2024年第1期7卷 930-967页

作者： Zhikai Chen Xiaoli Jiang Yash Boyjoo Lan Zhang Wei Li Lin Zhao Yanxia Liu Yagang Zhang Jian Liu Xifei Li School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu 611731SichuanChina State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 611731SichuanChina State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023LiaoningChina School of Materials Science and Engineering Xi’an University of TechnologyXi’an 710048ShaanxiChina DICP‑Surrey Joint Centre for Future Materials Department of Chemical and Process Engineering and Advanced Technology InstituteUniversity of SurreyGuilfordSurrey GU27XHUK College of Chemistry and Chemical Engineering Inner Mongolia UniversityHohhot 010021Inner MongoliaChina Curtin Mauritius Telfair 80809MokaMauritius Univ Lyon CNRSINSA‑LyonUniversitéClaude Bernard Lyon 1CETHIL UMR500869621 VilleurbanneFrance

Biomass,which is derived from abundant renewable resources,is a promising alternative to fossil-fuel-based carbon materials for building a green and sustainable ***-based carbon materials(BCMs)with tailored hierarchical pore structures,large specific surface areas,and various surface functional groups have been extensively studied as energy and catalysis-related *** review provides insights from the perspectives of intrinsic physicochemical properties and structure-property relationships for discussing several fundamental yet significant issues in BCMs and their ***,the synthesis,properties,and influencing factors of BCMs are ***,the causes and effects of the poor mechanical properties of biochar are *** factors affecting the properties of BCMs are presented,and the approaches for tuning these properties of biochar are ***,the applications of BCMs in energy storage and conversion are highlighted,including hydrogen storage and production,fuel cells,supercapacitors,hybrid electrodes,catalytic reforming,oxygen and CO_(2) reduction,and acetylene ***,the future trends and prospects for biochar are *** review aims to serve as a useful,up-to-date reference for future studies on BCMs for energy and catalytic applications.

关键词： Nanoporous carbon materials Biomass-based sustainable materials Energy storage Energy conversion

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Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

arXiv

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arXiv 2022年

作者： Kong, Zhenzhen Li, Zonghu Cao, Gang Su, Jiale Zhang, Yiwen Liu, Jinbiao Liu, Jingxiong Ren, Yuhui Wei, Laiming Guo, Guoping Wu, Yuanyuan Radamson, Henry H. Li, Junfeng Wu, Zhenhua Li, Haiou Yang, Jiecheng Zhao, Chao Wang, Guilei Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei230026 China Hefei National Laboratory Hefei230088 China School of Advanced Manufacturing Engineering Hefei University Hefei230601 China Origin Quantum Computing Company Limited Hefei230026 China Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou510535 China Beijing Superstring Academy of Memory Technology 100176 China

We fabricate an undoped Ge quantum well under a 30 nm relaxed Ge0.8Si0.2 shallow barrier. The bottom barrier contains Ge0.8Si0.2 (650 ℃) followed by Ge0.9Si0.1 (800 ℃) such that variation of Ge content forms a sharp interface that can suppress the threading dislocation density (TDD) penetrating into the undoped Ge quantum well. The Ge0.8Si0.2 barrier introduces enough in-plane parallel strain (Ε strain -0.41%) in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel obtain an ultrahigh two-dimensional hole gas (2DHG) mobility over 2×106 cm2/Vs and a very low percolation of 5.625 × 1010cm−2. A tunable fractional quantum Hall effect at high densities and high magnetic fields has also been observed. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum *** Codes 81-05, 81V70 © 2022, CC BY-NC-ND.

关键词： Germanium

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Exploring the tricritical nature and unconventional magnetoresistance in EuCd2P2: An in-depth study of complex material characteristics

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Physical Review B 2024年第6期110卷 064407-064407页

作者： Azizur Rahman Majeed Ur Rehman Yue Zhang Weisheng Zhao Jianlin Wang Zheng Chen Zahir Muhammad Lei Zhang Department of Physics Dongguan Guangdong 523808 China Institute of Physics School of Integrated Circuit Science and Engineering Beihang University Hefei 230013 China Hefei National Research Center for Physical Sciences at the Microscale Anhui Laboratory of Advanced Photon Science and Technology Anhui Key Laboratory of Low-Energy Quantum Materials and Devices High Magnetic Field Laboratory Hefei Institutes of Physical Science

EuCd2P2, a layered phosphide crystal, exhibits a nonconventional magnetoresistive trend that deviates from typical material behavior. This unique characteristic prompts further intriguing and complex investigation. Herein, we utilize critical exponent analysis, angle-resolved photoemission spectroscopy (ARPES), and density functional theory to uncover physical insights into EuCd2P2. Magnetization analysis reveals a persistent ferromagnetic phase above the antiferromagnetic phase, extending to higher temperatures at high magnetic fields. Critical behavior analysis of H∥ab reveals critical exponents β= 0.2432(2), γ= 0.883(2), and δ= 4.63(1), aligning with a three-dimensional tricritical mean-field model coupled with long-range interaction (σ = 1.53). The H−T phase diagram establishes a tricritical point (H = 620 Oe, T = 18.3 K), signifying diverse spin interactions and magnetic phases. Temperature-dependent ARPES discloses significant modifications in the electronic band spectrum of EuCd2P2 during the spin ordering transitions, characterized by a substantial band gap alteration and valence band splitting. Remarkably, the semiconducting properties of EuCd2P2 remain unaffected throughout these transitions. First-principles simulations unveil a near-degenerate coexistence of layer-antiferromagnetic and -ferromagnetic phases, significant valence band modifications in CdP due to distinct proximity effects induced by the Eu lattice's spin-magnetic moments, and the half-metallic phases in ferromagnetic EuCd2P2 crystals. These findings advance our understanding of magnetic and electronic properties in EuCd2P2.

关键词： First-principles calculations Magnetic coupling Magnetic interactions Magnetic phase transitions Magnetism

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One-pot hydrothermal synthesis of fluorescent carbon quantum dots with tunable emission color for application in electroluminescence detection of dopamine

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Biosensors and Bioelectronics: X 2022年 10卷

作者： Zhu, Zikang Niu, Huimin Li, Ruirui Yang, Zhengchun Wang, John Li, Xu Pan, Peng Liu, Jun Zhou, Baozeng School of Integrated Circuit Science and Engineering Advanced Materials and Printed Electronics Center Tianjin Key Laboratory of Film Electronic & Communication Devices Tianjin University of Technology Tianjin300384 China School of Electrical Engineering and Automation Tianjin University of Technology Tianjin300384 China Department of Materials Science and Engineering National University of Singapore Singapore 117574 Singapore Singapore 138634 Singapore Department of Food Science & Technology Faculty of Science National University of Singapore Singapore 117542 Singapore

Existing carbon quantum dot (CQD) synthesis approaches for the detection of dopamine (DA) require additional processes for separating quantum dots, which makes them complex and decreases the yield. Therefore, a facile CQD synthesis approach without complicated processing steps or reaction conditions is required. In this study, CQDs were synthesized via an environment-friendly one-step hydrothermal approach using glucose and potassium phosphate as the starting materials. The fluorescent colors emitted by the synthesized CQDs were dependent on the amount of potassium phosphate used. The mechanism of CQDs emitting different colors of fluorescence was theoretically speculated by computational simulation. The electronic and optical properties of CQDs models with different sizes are studied by density functional theory (DFT). An electroluminescence (ECL) sensing platform based on the fluorescent CQDs was developed for the detection of DA. Under optimal conditions, the ECL intensity of the CQDs decreased linearly when the DA concentration was controlled within the range of 10−8–10−4 M. The results showed that the ECL sensing platform can be successfully applied for the determination of DA content within a certain concentration range, with a detection limit of 62 nM. © 2022 The Authors

关键词： Semiconductor quantum dots

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Stochastic EUV Resist Model

Stochastic EUV Resist Model

引用

Electronics Design Automation (ISEDA), International Symposium of

作者： Guangjian He Jing Xue Taian Fan Yayi Wei Computational Lithography R&D Center Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou China Achievement Transformation Department Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Integrated Circuits Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing China Advanced Semiconductor Technology Development Department Institute of Microelectronics Chinese Academy of Sciences Beijing China

The stochastic effects in photoresist patterning is of great concern in the implementation of EUV lithography. The stochastic nature of EUV chemically amplified resist requires new modeling approaches rather than the continuous model used in DUV. In this paper, a stochastic model based on Gillespie algorithm is introduced, which subdivides the resist volume into many rectangular small cells and simulates the reaction-diffusion behavior of molecules in a cell volume according to carefully calculated probability. In addition, we further explore the influence of the cell size on the stochastic model. There is an optimal cell size in consideration of precision and running time. When cell size is sufficiently large, the results will approximate to the continuous model.

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Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations

arXiv

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arXiv 2024年

作者： Sun, Jianshi Li, Shouhang Tong, Zhen Shao, Cheng Chen, Xiangchuan Liu, Qianqian Xiong, Yucheng An, Meng Liu, Xiangjun Institute of Micro/Nano Electromechanical System and Integrated Circuit College of Mechanical Engineering Donghua University Shanghai201620 China School of Advanced Energy Sun Yat-Sen University Shenzhen518107 China Thermal Science Research Center Shandong Institute of Advanced Technology Shandong Jinan250103 China Department of Mechanical Engineering The University of Tokyo Bunkyo 7-3-1 Hongo Tokyo113-8656 Japan

Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhancing the performance of GaN-based power electronics relies on heavy doping. Previous studies showed that electron-phonon interactions have strong effects on the lattice thermal conductivity of GaN due to the Fröhlich interaction. Surprisingly, our investigation reveals weak effects of electron-phonon interactions on the lattice thermal conductivity of n-type GaN at ultra-high electron concentrations and the impact of the Fröhlich interaction can be ignored. The small phonon-electron scattering rate is attributed to the limited scattering channels, quantified by the Fermi surface nesting function. In contrast, there is a significant reduction in the lattice thermal conductivity of p-type GaN at high hole concentrations due to the relatively larger Fermi surface nesting function. Meanwhile, as p-type GaN has relatively smaller electron-phonon matrix elements, the reduction in lattice thermal conductivity is still weaker than that observed in p-type silicon. Our work provides a deep understanding of thermal transport in doped GaN and the conclusions can be further extended to other wide-band-gap semiconductors, including β-Ga2O3, AlN, and ZnO. Copyright © 2024, The Authors. All rights reserved.

关键词： Gallium nitride

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Type-printable photodetector arrays for multichannel meta-infrared imaging

arXiv

引用

arXiv 2021年

作者： Guo, Junxiong Gu, Shuyi Lin, Lin Liu, Yu Cai, Ji Cai, Hongyi Tian, Yu Zhang, Yuelin Zhang, Qinghua Liu, Ze Zhang, Yafei Gong, Tianxun Zhang, Xiaosheng Bi, Lei Lin, Yuan Huang, Wen Gu, Lin Zhang, Jinxing School of Electronic Information and Electrical Engineering Institute of Advanced Study Chengdu University Chengdu610106 China School of Integrated Circuit Science and Engineering National Exemplary School of Microelectronics University of Electronic Science and Technology of China Chengdu610054 China School of Integrated Circuits Tsinghua University Beijing100084 China The College of Integrated Circuit Science and Engineering National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies Nanjing University of Posts and Telecommunications Nanjing210023 China Department of Physics Beijing Normal University Beijing100875 China Institute of Physics Chinese Academy of Science Beijing National Laboratory of Condensed Matter Physics Beijing100190 China School of Materials Science and Engineering Tsinghua University Beijing100084 China

Multichannel meta-imaging, inspired by the parallel-processing capability of neuromorphic computing, offers significant advancements in resolution enhancement and edge discrimination in imaging systems, extending even into the mid- to far-infrared spectrum. Currently, high-performance multichannel infrared imaging systems typically consist of separate detector arrays and gratings or multi-camera integration, which require complex circuit design and heavy power consumption, hindering the implementation of advanced human-eye-like imagers. Here, we present a novel approach for printable graphene plasmonic photodetector arrays with zero-bias operation driven by a ferroelectric superdomain for multichannel meta-infrared imaging with enhanced edge discrimination. The fabricated photodetectors exhibited multiple spectral responses by directly rescaling the ferroelectric superdomain instead of reconstructing the gratings. We also demonstrated enhanced and faster shape classification (98.1%) and edge detection (98.2%) using our multichannel infrared images compared with single-channel detectors. Our proof-of-concept photodetector arrays simplify multichannel infrared imaging systems and hold great potential for applications in efficient edge detection in human-brain-type machine vision. © 2021, CC BY.

关键词： Photons

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A novel strategy for GaN-on-diamond device with a high thermal boundary conductance

arXiv

引用

arXiv 2021年

作者： Mu, Fengwen Xu, Bin Wang, Xinhua Gao, Runhua Huang, Sen Wei, Ke Takeuchi, Kai Chen, Xiaojuan Yin, Haibo Wang, Dahai Yu, Jiahan Suga, Tadatomo Shiomi, Junichiro Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits RandD Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Department of Mechanical Engineering The University of Tokyo Tokyo Bunkyo113-8656 Japan University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Collaborative Research Center Meisei University Tokyo Hino-shi191-8506 Japan Integrated Circuit Advanced Process RandD Center Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China

To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but remains challenging. Enormous efforts have been made to transfer a GaN device layer onto a diamond substrate with a high thermal conductivity by bonding. In this work, two GaN-diamond bonded composites are prepared via modified surface activated bonding (SAB) at room temperature with silicon interlayers of different thicknesses (15 nm and 22 nm). Before and after post annealing process at 800 oC, thermal boundary conductance (TBC) across the bonded interface including the interlayer and the stress of GaN layer are investigated by time-domain thermoreflectance and Raman spectroscopy, respectively. After bonding, the 15 nm Si interlayer achieved a higher TBC. The post-annealing significantly increased the TBC of both interfaces, while the TBC of 22 nm silicon interlayer increased greater and became higher than that of 15 nm. Detailed investigation of the microstructure and composition of the interfaces were carried out to understand the difference in interfacial thermal conduction. The obtained stress was no more than 230 MPa for both before and after the annealing, and this high thermal stability of the bonded composites indicates that the room temperature bonding can realize a GaN-on-diamond template suitable for further epitaxial growth or device process. This work brings a novel strategy of SAB followed by high-temperature annealing to fabricate a GaN-on-diamond device with a high TBC. © 2021, CC BY.

关键词： Gallium nitride

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Recent progress of integrated circuits and optoelectronic chips

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Science China(Information Sciences) 2021年第10期64卷 103-135页

作者： Yue HAO Shuiying XIANG Genquan HAN Jincheng ZHANG Xiaohua MA Zhangming ZHU Xingxing GUO Yahui ZHANG Yanan HAN Ziwei SONG Yan LIU Ling YANG Hong ZHOU Jiangyi SHI Wei ZHANG Min XU Weisheng ZHAO Biao PAN Yangqi HUANG Qi LIU Yimao CAI Jian ZHU Xin OU Tiangui YOU Huaqiang WU Bin GAO Zhiyong ZHANG Guoping GUO Yonghua CHEN Yong LIU Xiangfei CHEN Chunlai XUE Xingjun WANG Lixia ZHAO Xihua ZOU Lianshan YAN Ming LI School of Microelectronics Xidian University State Key Laboratory of Integrated Service Networks Xidian University National Integrated Circuit Innovation Center School of Microelectronics Fudan University School of Integrated Circuit Science and Engineering Beihang University China Center for Information Industry Development Frontier Institute of Chip and System Fudan University Institute of Microelectronics Peking University Nanjing Electronic Devices Institute State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Institute of Microelectronics Tsinghua University Center for Carbon-based Electronics Department of Electronics Peking University CAS Key Laboratory of Quantum Information University of Science and Technology of China CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum Physics University of Science and Technology of China Origin Quantum Computing Company Limited Key Laboratory of Flexible Electronics & Institute of Advanced Materials Nanjing Tech University State Key Laboratory of Electronic Thin Films and Integrated Devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China National Laboratory of Solid State Microstructures & College of Engineering and Applied Sciences Nanjing University State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences State Key Laboratory of Advanced Optical Communication Systems and Networks School of Electronics Engineering and Computer Science Peking University School of Electrical and Electronic Engineering Tiangong University Center for Information Photonics and Communications School of Information Science and TechnologySouthwest Jiaotong University School of Electronic Electrical and Communication Engineering

integrated circuits(ICs) and optoelectronic chips are the foundation stones of the modern information society. The IC industry has been driven by the so-called "Moore's law" in the past 60 years, and now has entered the post Moore's law era. In this paper, we review the recent progress of ICs and optoelectronic chips. The research status, technical challenges and development trend of devices, chips and integrated technologies of typical IC and optoelectronic chips are focused on. The main contents include the development law of IC and optoelectronic chip technology, the IC design and processing technology, emerging memory and chip architecture, brain-like chip structure and its mechanism, heterogeneous integration, quantum chip technology, silicon photonics chip technology, integrated microwave photonic chip, and optoelectronic hybrid integrated chip.

关键词： integrated circuit semiconductor science and technology optoelectronic device and chip photonic integrated circuit wide bandgap semiconductors silicon photonics hybrid integration quantum chip integrated microwave photonic photonic neural computing

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Picosecond Optospintronic Tunnel Junctions for Non-volatile Photonic Memories

Research Square

引用

Research Square 2021年

作者： Wang, Luding Cheng, Houyi Li, Pingzhi Liu, Yang van Hees, Youri L.W. Lavrijsen, Reinoud Lin, Xiaoyang Cao, Kaihua Koopmans, Bert Zhao, Weisheng Fert Beijing Institute School of Integrated Circuit Science and Engineering Beijing Advanced Innovation Center for Big Data and Brain Computing Beihang University Beijing100191 China Department of Applied Physics Institute for Photonic Integration Eindhoven University of Technology P.O. Box 513 Eindhoven5600 MB Netherlands

Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture1-3. However, conventional switching mechanisms of such devices are fundamentally hindered by spin polarized currents4, either spin transfer torque5,6 or spin orbit torque7,8 with spin precession time limitation and excessive power dissipation. These physical constraints significantly stimulate the advancement of modern spintronics1,4. Here, we report an optospintronic tunnel junction using a photonic-spintronic combination. This composite device incorporates an all-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-based perpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosida interaction. A picosecond all-optical operation of the optospintronic tunnel junction is explicitly confirmed by time-resolved measurements. Moreover, the device shows a considerable tunnel magnetoresistance and thermal stability. This proof-of-concept device represents an essential step towards ultrafast photonic memories with THz data access, as well as ultralow power consumption. © 2021, CC BY.

关键词： Tunnel junctions

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