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arXiv 2020年

作者： Li, Sai Kang, Wang Zhang, Xichao Nie, Tianxiao Zhou, Yan Wang, Kang L. Zhao, Weisheng School of Integrated Circuit Science and Engineering Beijing Advanced Innovation Center for Big Data and Brain Computing Beihang University Beijing100191 China Shenyuan Honors College Beihang University Beijing100191 China School of Science and Engineering Chinese University of Hong Kong Shenzhen518172 Hong Kong Department of Electrical and Computer Engineering University of California Los AngelesCA90095 United States

Improvements in computing performance have significantly slowed down over the past few years owing to the intrinsic limitations of computing hardware. However, the demand for data computing has increased exponentially. To solve this problem, tremendous attention has been focused on the continuous scaling of the Moore’s Law as well as the advanced non-von Neumann computing architecture. A rich variety of unconventional computing paradigms has been raised with the rapid development of nanoscale devices. Magnetic skyrmions, spin swirling quasiparticles, have been endowed with great expectations for unconventional computing due to their potential as the smallest information carriers by exploiting their physics and dynamics. In this paper, we provide an overview of the recent progress of skyrmion-based unconventional computing from a joint device-application perspective. This paper aims to build up a panoramic picture, analyze the remaining challenges, and most importantly to shed light on the outlook of skyrmion based unconventional computing for interdisciplinary researchers. Copyright © 2020, The Authors. All rights reserved.

关键词： Magnetism

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Giant enhancement of hole mobility for 4H-silicon carbide through suppressing interband electron-phonon scattering

arXiv

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arXiv 2024年

作者： Sun, Jianshi Li, Shouhang Tong, Zhen Shao, Cheng An, Meng Zhu, Xiongfei Zhang, Chuang Chen, Xiangchuan Xiong, Yucheng Frauenheim, Thomas Liu, Xiangjun Institute of Micro/Nano Electromechanical System and Integrated Circuit College of Mechanical Engineering Donghua University Shanghai201620 China School of Advanced Energy Sun Yat-Sen University Shenzhen518107 China Thermal Science Research Center Shandong Institute of Advanced Technology Shandong Jinan250103 China Department of Mechanical Engineering The University of Tokyo 7-3-1 Hongo Bunkyo Tokyo113-8656 Japan School of Science Constructor University Bremen28759 Germany Institute for Advanced Study Chengdu University Chengdu610106 China

4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mobility. Herein, we found that the hole mobility of 4H-SiC is mainly limited by the strong interband electron-phonon scattering using mode-level first-principles calculations. Our research indicates that applying compressive strain can reverse the sign of crystal-field splitting and change the ordering of electron bands close to the valence band maximum. Therefore, the interband electron-phonon scattering is severely suppressed, and the out-of-plane hole mobility of 4H-SiC can be enhanced by ∼ 200% with 2% uniaxial compressive strain applied. This work provides new insights into the electron transport mechanisms in semiconductors and suggests a strategy to improve hole mobility that could be applied to other semiconductors with hexagonal crystalline geometries. Copyright © 2024, The Authors. All rights reserved.

关键词： Hole mobility

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Long-Distance Coherent Propagation of High-Velocity Antiferromagnetic Spin Waves

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Physical Review Letters 2023年第9期130卷 096701-096701页

作者： Hanchen Wang Rundong Yuan Yongjian Zhou Yuelin Zhang Jilei Chen Song Liu Hao Jia Dapeng Yu Jean-Philippe Ansermet Cheng Song Haiming Yu Fert Beijing Institute MIIT Key Laboratory of Spintronics School of Integrated Circuit Science and Engineering Beihang University Beijing 100191 China International Quantum Academy Shenzhen 518048 China Department of Materials ETH Zurich Zurich 8093 Switzerland Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084 China Shenzhen Institute for Quantum Science and Engineering Southern University of Science and Technology Shenzhen 518055 China Institute of Physics Ecole Polytechnique Fédérale de Lausanne (EPFL) 1015 Lausanne Switzerland

We report on coherent propagation of antiferromagnetic (AFM) spin waves over a long distance (∼10 μm) at room temperature in a canted AFM α−Fe2O3 owing to the Dzyaloshinskii-Moriya interaction (DMI). Unprecedented high group velocities (up to 22.5 km/s) are characterized by microwave transmission using all-electrical spin wave spectroscopy. We derive analytically AFM spin-wave dispersion in the presence of the DMI which accounts for our experimental results. The AFM spin waves excited by nanometric coplanar waveguides have large wave vectors in the exchange regime and follow a quasilinear dispersion relation. Fitting of experimental data with our theoretical model yields an AFM exchange stiffness length of 1.7 Å. Our results provide key insights on AFM spin dynamics and demonstrate high-speed functionality for AFM magnonics.

关键词： Antiferromagnetism Exchange interaction Spin coherence Spin dynamics Spin waves

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Asymmetric scattering behaviors of spin wave dependent on magnetic vortex chirality

arXiv

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arXiv 2020年

作者： Zhang, Xue-Feng Shim, Je-Ho Ma, Xiao-Ping Song, Cheng Yu, Haiming Piao, Hong-Guang Hubei Engineering Research Center of Weak Magnetic-Field Detection China Three Gorges University Yichang443002 China Department of Physics College of Science Yanbian University Yanji133002 China School of Materials Science and Engineering Tsinghua University Beijing100084 China Fert Beijing Institute School of Integrated Circuit Science and Engineering Beijing Advanced Innovation Center for Big Data and Brain Computing Beihang University Beijing100191 China

In this letter, an asymmetric spin wave scattering behaviors caused by vortex chirality are investigated in cross-shaped ferromagnetic system. In the system, four scattering behaviors are found, 1) asymmetric skew scattering, depending on the polarity of vortex core, 2) back scattering (reflection), depending on the vortex core stiffness, 3) side deflection scattering, depending on structural symmetry of the vortex circulation, and 4) geometrical scattering, depending on waveguide structure. The first and second scattering behaviors are attributed to nonlinear topological magnon spin Hall effect related to magnon spin-transfer torque effect, which has value for magnonic exploration and application. Copyright © 2020, The Authors. All rights reserved.

关键词： Chirality

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Paper No P22: A Study on the Characteristics of IZO-TFTs with High-k HfSiOxGate Insulator Annealed in Various Conditions

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SID Symposium Digest of Technical Papers 2015年第S1期46卷

作者： Yoo Seong Lim Yong Jin Im Seung Soo Ha Chan Hee Park Min-hyung Jang Seung-il Choi Ji-in Park Moonsuk Yi Department of Electronics Engineering Pusan National University Busan Republic of Korea Department of Advanced Integrated Circuit Pusan National University Busan Republic of Korea

In this work, we investigate the enhanced performance of IZO-based TFTs with HfSiO x gate insulators. HfSiO x gate insulators, annealed at various conditions, are deposited by co-sputtering of HfO 2 and Si. The HfSiO x structural properties are investigated using AFM, XRD, and XPS techniques. Furthermore, the electrical characteristics are analyzed to investigate the effect of annealing conditions. We obtain optimal results for TFTs with HfSiOx gate insulators annealed for 1 h at 100°C, with a saturation mobility of 1.2 cm 2 /V·s, threshold voltage of 2.2 V, I on /I off ratio of 2.0 × 10 6 , and insulator surface roughness of 0.187 nm RMS.

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Observation of magnetic droplets in magnetic tunnel junctions

arXiv

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arXiv 2020年

作者： Shi, Kewen Cai, Wenlong Jiang, Sheng Zhu, Daoqian Cao, Kaihua Guo, Zongxia Wei, Jiaqi Du, Ao Li, Zhi Huang, Yan Yin, Jialiang Åkerman, Johan Zhao, Weisheng Fert Beijing Institute School of Integrated Circuit Science and Engineering Beijing Advanced Innovation Center for Big Data and Brain Computing Beihang University Beijing China Beihang-Goertek Joint Microelectronics Institute Qingdao Research Institute Beihang University Qingdao266000 China Department of Physics University of Gothenburg Gothenburg412 96 Sweden Department of Applied Physics School of Engineering Sciences KTH Royal Institute of Technology Electrum 229 KistaSE-16440 Sweden

Magnetic droplets, a class of highly non-linear magnetodynamical solitons, can be nucleated and stabilized in nanocontact spin-torque nano-oscillators where they greatly increase the microwave output power. Here, we experimentally demonstrate magnetic droplets in magnetic tunnel junctions (MTJs). The droplet nucleation is accompanied by a power increase of over 300 times compared to its ferromagnetic resonance modes. The nucleation and stabilization of droplets are ascribed to the double-CoFeB free layer structure in the all-perpendicular MTJ which provides a low Zhang-Li torque and a high pinning field. Our results enable better electrical sensitivity in the fundamental studies of droplets and show that the droplets can be utilized in MTJ-based applications. Copyright © 2020, The Authors. All rights reserved.

关键词： Spin dynamics

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Sputtered Sn-doped Ga2O3 films under balance controlled of energy supply and ion bombardment for solar-blind detection application

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Vacuum 2024年 225卷

作者： Wang, Chen Fan, Wei-Hang Cao, Rong-Jun Fan, Hui-Chen Xu, Yi-Hong Kang, Pin-Chun Wu, Ting-Zhu Kuo, Hao-Chung Lien, Shui-Yang Zhu, Wen-Zhang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-electronic and Communication Engineering Xiamen University of Technology Xiamen361024 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361004 China National Integrated Circuit Industry and Education Integration Innovation Platform Department of Electronic Science Xiamen University Xiamen361005 China Department of Photonics & Graduate Institute of Electro-Optical Engineering College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua51591 Taiwan

The characteristics of amorphous Sn-doped Ga2O3 films deposited using radio frequency magnetron sputtering at room temperature under different sputter powers have been demonstrated. A balance mechanism of energy supply and ion bombardment controlled by sputter power has been found during the deposition. The increasing growth rate as power can be due to the increased yield sputtering species indicated by an in situ optical emission spectroscopy. As the power increases to 700 W, an obvious change from discrete nanoparticles to flat-continuous film can be observed because of sufficient energy supply for oxidation reaction, which leads to the maximum ratio of lattice oxygen and Sn4+ indicating the optimal film quality and conductive property. However, a non-negligible high energy ion bombardment presented at 900 W leads to the degraded film quality. The influence of sputtering power on Sn-doped Ga2O3 solar-blind photodetectors is demonstrated. It can obtain a good performance with an ultra-low dark current density of 2.2 × 10−11 A/cm2, a substantial light-dark current ratio of 1.08 × 103 and fast rise/decay time of 1.59 s/0.54 s at 700 W. The revelation of the role of sputtering power on the properties of Sn-doped Ga2O3 films may offer an interesting direction for low-cost and high-performance solar-blind photodetectors. © 2024 Elsevier Ltd

关键词： Gallium compounds

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Current switching of the antiferromagnetic Néel vector in Pd/CoO/MgO(001)

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Physical Review B 2022年第21期106卷 214405-214405页

作者： M. Yang Q. Li T. Wang B. Hong C. Klewe Z. Li X. Huang P. Shafer F. Zhang C. Hwang W. S. Yan R. Ramesh W. S. Zhao Y. Z. Wu Xixiang Zhang Z. Q. Qiu Institute of Physical Science and Information Technology Anhui University Hefei Anhui 230601 China National Synchrotron Radiation Laboratory University of Science and Technology of China Hefei Anhui 230029 China Department of Physics University of California Berkeley California 94720 USA Fert Beijing Research Institute School of Integrated Circuit Science and Engineering Beijing Advanced Innovation Center for Big Data and Brain Computing Beihang University Beijing China Advanced Light Source Lawrence Berkeley National Laboratory Berkeley California 94720 USA Department of Materials Science and Engineering University of California Berkeley California 94720 USA Korea Research Institute of Standards and Science Yuseong Daejeon 305-340 Korea Department of Physics State Key Laboratory of Surface Physics Fudan University Shanghai 200433 China Physical Science and Engineering Division King Abdullah University of Science and Technology Thuwal 23955-6900 Saudi Arabia

Recently, the electrical switching of antiferromagnetic (AFM) order has been intensively investigated because of its application potential in data storage technology. Herein, we report the current switching of the AFM Néel vector in epitaxial Pd/CoO films as a function of temperature. Using combined measurements of Hall resistance (HR) and x-ray magnetic linear dichroism (XMLD) below and above the AFM Néel temperature, we unambiguously identified both magnetic and nonmagnetic contributions to the current-induced HR change. Through magnetic field-induced HR measurements, we quantitatively determined the percentage of current-induced CoO spin switching. Further, we showed that the thermal effect dominated the CoO magnetic switching more in samples with a thinner Pd layer and that samples with a thicker CoO layer required higher thermal activation for current-induced magnetic switching. These results provide a clear and comprehensive picture of current-induced AFM spin switching across the AFM Néel temperature.

关键词： Hall effect Magnetism Spintronics X-ray magnetic linear dichroism

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Scaling MoS2 Transistors to 1 nm Node

Scaling MoS2 Transistors to 1 nm Node

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International Electron Devices Meeting (IEDM)

作者： Weisheng Li Mingyi Du Chunsong Zhao Guangkai Xiong Weizhuo Gan Lei Liu Taotao Li Yuan Gao Fuchen Hou Junhao Lin Dongxu Fan Hao Qiu Zhihao Yu Jeffrey Xu Yi Shi Xinran Wang School of Integrated Circuits School of Electronic Science and Engineering Interdisciplinary Research Center for Future Intelligent Chips (Chip-X) Nanjing University China Suzhou Laboratory Suzhou China Huawei Technologies Co. LTD. Shenzhen China Department of Physics Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices Southern University of Science and Technology Shenzhen China Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong) Shenzhen China School of Integrated Circuit Science and Engineering Nanjing University of Posts and Telecommunications Nanjing China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

We report on the first monolayer MoS2 FETs scaled to 40 nm contacted gate pitch (CGP), corresponding to 1 nm node as defined by IRDS. The FETs deliver drive current of 0.79 $\text{mA}/\mu \mathrm{m}$ under 0.6 V drain bias with on/off ratio $> 10^{7}$ and SS = 62 mV/dec. We achieve this by developing a new Sb deposition technology which reduces $R_{\mathrm{c}}$ to below 100 $\Omega\cdot\mu \mathrm{m}$ at deep $L_{\mathrm{c}}$ scaling regime $(L_{\mathrm{c}}=20\ \text{nm})$ . TCAD simulations predict that quad-stacked Mos2 nanosheet FET employing the new Sb contact reduces the gate delay by 46.6% compared to Si CMOS at 1 nm node and demonstrates superior scaling potential to the end of roadmap.

关键词： Semiconductor device modeling Performance evaluation Field effect transistors Logic gates Predictive models Silicon Nanoscale devices Sulfur Logic Molybdenum

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Asian diversity in human immune cells

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Cell 2025年第8期188卷 2288-2306.e24页

作者： Kock, Kian Hong Tan, Le Min Han, Kyung Yeon Ando, Yoshinari Jevapatarakul, Damita Chatterjee, Ankita Lin, Quy Xiao Xuan Buyamin, Eliora Violain Sonthalia, Radhika Rajagopalan, Deepa Tomofuji, Yoshihiko Sankaran, Shvetha Park, Mi-So Abe, Mai Chantaraamporn, Juthamard Furukawa, Seiko Ghosh, Supratim Inoue, Gyo Kojima, Miki Kouno, Tsukasa Lim, Jinyeong Myouzen, Keiko Nguantad, Sarintip Oh, Jin-Mi Rayan, Nirmala Arul Sarkar, Sumanta Suzuki, Akari Thungsatianpun, Narita Venkatesh, Prasanna Nori Moody, Jonathan Nakano, Masahiro Chen, Ziyue Tian, Chi Zhang, Yuntian Tong, Yihan Tan, Crystal T.Y. Tizazu, Anteneh Mehari Loh, Marie Hwang, You Yi Ho, Roger C. Larbi, Anis Ng, Tze Pin Won, Hong-Hee Wright, Fred A. Villani, Alexandra-Chloé Park, Jong-Eun Choi, Murim Liu, Boxiang Maitra, Arindam Pithukpakorn, Manop Suktitipat, Bhoom Ishigaki, Kazuyoshi Okada, Yukinori Yamamoto, Kazuhiko Carninci, Piero Chambers, John C. Hon, Chung-Chau Matangkasombut, Ponpan Charoensawan, Varodom Majumder, Partha P. Shin, Jay W. Park, Woong-Yang Prabhakar, Shyam Genome Institute of Singapore (GIS) Agency for Science STAR) 60 Biopolis Street Genome Singapore 138672 Singapore Samsung Genome Institute Samsung Medical Center Seoul 06351 South Korea Laboratory for Advanced Genomics Circuit RIKEN Center for Integrative Medical Sciences (IMS) 1-7-22 Suehiro-cho Tsurumi-ku Kanagawa Yokohama 230-0045 Japan Laboratory for Transcriptome Technology RIKEN Center for IMS 1-7-22 Suehiro-cho Tsurumi-ku Kanagawa Yokohama 230-0045 Japan Single-cell omics and Systems Biology of Diseases (scSyBiD) Research Unit Faculty of Science Mahidol University Bangkok 10400 Thailand Department of Microbiology Faculty of Science Mahidol University Bangkok 10400 Thailand John C. Martin Centre for Liver Research and Innovations Sonarpur Kolkata 700150 India Laboratory for Systems Genetics RIKEN Center for IMS 1-7-22 Suehiro-cho Tsurumi-ku Kanagawa Yokohama 230-0045 Japan Department of Statistical Genetics of Medicine Osaka University 2-2 Yamadaoka Osaka Suita 565-0871 Japan Integrated Frontier Research for Medical Science Division Institute for Open and Transdisciplinary Research Initiatives Osaka University 2-2 Yamadaoka Osaka Suita 565-0871 Japan Samsung Advanced Institute for Health Sciences & Technology Sungkyunkwan University Seoul 06351 South Korea Laboratory for Autoimmune Diseases RIKEN Center for IMS 1-7-22 Suehiro-cho Tsurumi-ku Kanagawa Yokohama 230-0045 Japan Department of Biochemistry Faculty of Science Mahidol University Bangkok 10400 Thailand Integrative Computational BioScience Center Mahidol University Nakhon Pathom 73170 Thailand Biotechnology Research and Innovation Council National Institute of Biomedical Genomics West Bengal Kalyani 741251 India Laboratory for Genome Information Analysis RIKEN Center for IMS 1-7-22 Suehiro-cho Tsurumi-ku Kanagawa Yokohama 230-0045 Japan Department of Allergy and Rheumatology of Medicine The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8654 Japan D

The relationships of human diversity with biomedical phenotypes are pervasive yet remain understudied, particularly in a single-cell genomics context. Here, we present the Asian Immune Diversity Atlas (AIDA), a multi-national single-cell RNA sequencing (scRNA-seq) healthy reference atlas of human immune cells. AIDA comprises 1,265,624 circulating immune cells from 619 donors, spanning 7 population groups across 5 Asian countries, and 6 controls. Though population groups are frequently compared at the continental level, we found that sub-continental diversity, age, and sex pervasively impacted cellular and molecular properties of immune cells. These included differential abundance of cell neighborhoods as well as cell populations and genes relevant to disease risk, pathogenesis, and diagnostics. We discovered functional genetic variants influencing cell-type-specific gene expression, which were under-represented in non-Asian populations, and helped contextualize disease-associated variants. AIDA enables analyses of multi-ancestry disease datasets and facilitates the development of precision medicine efforts in Asia and beyond. © 2025 The Authors

关键词： eQTL genetic diversity genetics genomics healthy baseline human diversity immune cells precision medicine single-cell RNA sequencing sub-continental diversity

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