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diverse set of two-qubit gates for spin qubits in semiconductor quantum dots

Physical review Applied 2025年第2期23卷 024065-024065页

作者： Ming Ni rong-Long Ma Zhen-Zhen Kong Ning Chu Sheng-Kai Zhu Chu Wang Ao-ran Li Wei-Zhu Liao Gang Cao CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei Anhui 230026 China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of China Hefei Anhui 230026 China Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 P. R. China Hefei National Laboratory University of Science and Technology of China Hefei 230088 China

On the path toward large-scale quantum information processing, the ability to implement diverse types of two-qubit gates is preferable for device structure designs and quantum circuit compilations. Here, taking advantage of the inherent Heisenberg interaction between spin qubits, we propose and verify a fast composite two-qubit gate scheme for spin qubits based on semiconductor quantum dots. Theoretical results indicate that the gate scheme facilitates the simultaneous implementation of various types of two-qubit gates, including five types of essential two-qubit gates, iswap-family gates, and fermionic simulation gates. Furthermore, we observe an excellent match between the measured and simulated results, representing the preliminary experimental demonstration of the composite gate scheme. We believe that, with this versatile composite two-qubit gate scheme, the available broad-spectrum two-qubit operations will allow us to efficiently utilize the hardware resources and accelerate the advancement of noisy intermediate-scale quantum computing.

关键词： Semiconductor quantum dots

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New structure transistors for advanced technology node CMOS ICs

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National Science review 2024年第3期11卷 24-41页

作者： Qingzhu Zhang Yongkui Zhang Yanna Luo Huaxiang Yin Integrated Circuit Advanced Process R&D Center Institute of Microelectronics of Chinese Academy of Sciences(IMECAS) State key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences School of Integrated Circuits University of Chinese Academy of Sciences

Over recent decades, advancements in complementary metal-oxide-semiconductor integrated circuits(ICs)have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor(FinFET) and gate-all-around FET(GAAFET), more gate electrodes have been added to three-dimensional(3d) channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore's law scaling is no longer expected to be applicable to geometrical shrinkage. Vertical transistor stacking, e.g. in complementary FETs(CFET), 3d stack(3dS) FETs and vertical-channel transistors(VFET), for enhanced density and variable circuit or system design represents a revolutionary scaling approach for sustained IC development. Herein, innovative works on specific structures, key process breakthroughs, shrinking cell sizes and design methodologies for transistor structure research and development are reviewed. Perspectives on future innovations in advanced transistors with new channel materials and operating theories are also discussed.

关键词： transistor CMOS GAAFET CFET 3dS FET

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Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs

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Science China(Information Sciences) 2024年第6期67卷 463-464页

作者： Fan ZHANG Zhaohao ZHANG Jiaxin YAO Qingzhu ZHANG Gaobo XU Zhenhua WU Huan LIU Genquan HAN Yan LIU Huaxiang YIN Integrated Circuit Advanced Process R&D Center State Key Lab of Fabrication Technologies for Integrated CircuitsInstitute of Microelectronics of Chinese Academy of Sciences School of Microelectronics Xidian University School of Integrated Circuits University of Chinese Academy of Sciences

As the CMOS technology scaling is reaching fundamental limits,there is a substantial demand for energy-efficient devices with lower operating *** capacitance field-effect transistors （NCFETs） exhibit the capability to amplify the gate voltage and become promising candidates for future advanced process *** （FE） HfO2-based materials,

关键词： channel sweep range capacitance effects finfets negative short

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Fano resonance from Air-mode Photonic Crystal Nanobeam Cavity with 248-nm dUV Lithography

Fano Resonance from Air-mode Photonic Crystal Nanobeam Cavit...

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2023 Opto-Electronics and Communications Conference, OECC 2023

作者： Sun, Fujun Yang, Gang Zhang, Peng Tang, Bo Li, Zhihua Li, Bin Yang, Yan Institute of Microelectronics Integrated Circuit Advanced Process R&D Center of IMECAS Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781665462136

Photonic crystal nanobeam cavity (PCNC) is important building block for large-scale photonic integrated circuits (PICs). Nevertheless, most state-of-the-art demonstrations rely on electron beam lithography (EBL). Here, we experimentally present the characteristics of Fano resonance from air-mode PCNC using 248-nm deep ultraviolet (dUV) lithography for the first time. Experimentally high average Q factor of ∼ 1.58 × 104 is achieved. © 2023 IEEE.

关键词： Electron beam lithography

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Nanosheet Count Optimization Strategy of Complementary FET (CFET) Scaling beyond 2 nm from device to circuit 7

Nanosheet Count Optimization Strategy of Complementary FET (...

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7th International Workshop on advanced Patterning Solutions, IWAPS 2023

作者： He, Hao Li, Shixin Luo, Yanna Xu, Haoqing Yin, Huaxiang Wu, Zhenhua EDA Center Institute of Microelectronics Beijing China Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Beijing China

ISBN: (纸本)9798350344547

Complementary Field-Effect Transistors is one of the most promising structures for replacing GAA (Gate-All-Around) field-effect transistors while continuing the advancement of Moore's Law. Thus, optimizing its structure is a crucial research direction. This study proposes a nano-sheet count design strategy to address the issue of mismatched electron and hole mobilities in standard CFET cell and a nine-stage ring oscillator (rO). The simulation results demonstrate the effective matching of electron and hole mobilities by adjusting the ratio of NMOS (n-type) and PMOS (p-type) nano-sheet counts, thus enabling the optimization of circuit performance and power consumption for specific applications. In the CFET of the rO unit, a frequency increase of 10% and a capacitance reduction of 6% are achieved with only a 3% increase in power consumption, comparing a CFET with four P-doped nano-sheet channels and two N -doped nano-sheet channels to one with three P-doped nano-sheet channels and three N-doped nano-sheet channels. © 2023 IEEE.

关键词： Field effect transistors

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recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications

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Science China(Information Sciences) 2023年第10期66卷 84-104页

作者： Zhaohao ZHANG Guoliang TIAN Jiali HUO Fang ZHANG Qingzhu ZHANG Gaobo XU Zhenhua WU Yan CHENG Yan LIU Huaxiang YIN Integrated Circuit Advanced R&D Center Institute of Microelectronics of Chinese Academy of Sciences School of Integrated Circuits University of Chinese Academy of Sciences School of Microelectronics Xidian University Department of Electronics East China Normal University

Hafnium oxide-based ferroelectric field-effect-transistors(FeFET), which combine super-steep logical switching and low power non-volatile memory functions, have significant potential for post-Moore integrated circuit innovations with higher energy efficiency and larger integration scale. In this review, recent research into hafnium oxide-based ferroelectric(FE) films and different functional devices is presented,from fundamentals to applications. different technological challenges and state-of-the-art research and development efforts related to the physical understanding and performance optimization of FE films, advanced hafnium oxide-based device integration, and device applications in logic-in-memory and artificial synapses and neurons for neuromorphic computing are addressed.

关键词： ferroelectric FeFET hafnium oxide HZO logic-in-memory neuromorphic computing

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Crystallization behaviors of ultrathin Al-doped HfO2 amorphous films grown by atomic layer deposition

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Chinese Physics B 2017年第2期26卷 461-466页

作者： Xue-Li Ma Hong Yang Jin-Juan Xiang Xiao-Lei Wang Wen-Wu Wang Jian-Qi Zhang Hua-Xiang Yin, Hui-Long Zhu Chao Zhao Integrated Circuit Advanced Process R ＆ D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China National Center for Nanoscience and Technology Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China

In this work, ultrathin pure HfO_2 and Al-doped HfO_2films（about 4-nm thick） are prepared by atomic layer deposition and the crystallinities of these films before and after annealing at temperatures ranging from 550℃ to 750℃ are analyzed by grazing incidence x-ray diffraction. The as-deposited pure HfO_2 and Al-doped HfO_2 films are both amorphous. After550-℃ annealing, a multiphase consisting of a few orthorhombic, monoclinic and tetragonal phases can be observed in the pure HfO_2 film while the Al-doped HfO_2 film remains amorphous. After annealing at 650℃ and above, a great number of HfO_2 tetragonal phases, a high-temperature phase with higher dielectric constant, can be stabilized in the Al-doped HfO_2 film. As a result, the dielectric constant is enhanced up to about 35. The physical mechanism of the phase transition behavior is discussed from the viewpoint of thermodynamics and kinetics.

关键词： Al-doped HfO2 ultrathin film phase transition thermodynamics kinetics

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Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf_(0.5)Zr_(0.5)O_(2)

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rare Metals 2024年第7期43卷 3242-3249页

作者： Zhao-Hao Zhang Yan-Na Luo Gao-Bo Xu Jia-Xin Yao Zhen-Hua Wu Hong-Bin Zhao Qing-Zhu Zhang Hua-Xiang Yin Jun Luo Wen-Wu Wang Hai-Ling Tu Integrated Circuit Advanced R&D Center Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous MetalsBeijing 100088China

In this work,a conventional HfO_(2) gate dielectric layer is replaced with a 3-nm ferroelectric(Fe) HZO layer in the gate stacks of advanced fin field-effect transistors(FinFETs).Fe-induced characteristics,e.g.,negative drain induced barrier lowering(N-dIBL) and negative differential resistance(Ndr),are clearly observed for both p-and n-type HZO-based *** characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide(HZO) film,caused by Al doping from the TiAlC capping *** mechanism is verified for capacitors with structures similar to the *** to the enhanced ferroelectricity and N-dIBL phenomenon,the drain current(I_(dS))of the HZO-FinFETs is greater than that of HfO_(2)-FinFETs and obtained at a lower operating ***,circuits based on HZO-FinFET achieve higher performance than those based on HfO_(2)-FinFET at a low voltage drain(V_(dd)),which indicates the application feasibility of the HZO-FinFETs in the ultralow power integrated circuits.

关键词： FinFET Ferroelectric Hafnium zirconium oxide Subthreshold swing Low power

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Improve the Breakdown Voltage of Silicon Pixel Sensor With Optimized Multi-Guard rings

Improve the Breakdown Voltage of Silicon Pixel Sensor With O...

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2023 China Semiconductor Technology International Conference, CSTIC 2023

作者： Sun, Peng Xu, Gaobo Fu, Jianyu ding, Mingzheng Yan, Yinan Zhang, Luoyun Yin, Huaxiang Institute of Microelectronics Chinese Academy of Sciences Integrated Circuit Advanced Process R&d Center Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9798350311006

The silicon pixel sensor (SPS) for X-ray free electron laser detection requires ultra-high operating voltage. In this paper, for an optimized multi-guard rings, a SPS with ultra-high breakdown voltage and low leakage is obtained. The effect of the arrangement of the multi-guard rings on the SPS breakdown is investigated by TCAd simulation. It is found that SPS with a gradually increasing gap from inner ring to outer ring has a higher breakdown voltage. Guided by this, the multi-guard ring structure of SPS is optimized and applied into the manufacture of devices. Finally, the optimized SPS exhibits an ultra-high breakdown voltage of exceeding 1,800 V;and the dark current of per pixel is approximately 2.0 pA at a bias voltage of 1,000 V. © 2023 IEEE.

关键词： Electric breakdown

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Method for improving endurance and breakdown characteristics of metal/ferroelectric/metal capacitor by modulating deposition cycle ratio

Method for improving endurance and breakdown characteristics...

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2022 IEEE International Conference on Artificial Intelligence and Computer Applications, ICAICA 2022

作者： Tian, denghuai Xu, Hao Zhang, Jing North China University of Technology School of Information Science and Technology Beijing China Integrated Circuit Advanced Process R&d Center Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (数字)9781665499910

ISBN: (纸本)9781665499910

Hafnium-based ferroelectric devices show great potential in the application of high-efficiency memory technology. In this work, we study the effect of modulating deposition cycle ratio on memory windows and endurance of metal/ferroelectric/metal (MFM) capacitors. We fabricated capacitors with 3 conditions for Hf0.5Zr0.5O2 thin film of the deposition cycle ratio are 1:1, 5:5, 10:10, respectively. All samples have nearly the same memory window and the devices with a 10:10 cycle ratio could tolerate more bipolar cycles. By comparing the leakage and breakdown characteristics, the improved endurance for the 10:10 device is due to the lower trap density of oxygen vacancy. Furthermore, the deposition cycle ratio can be further optimized to make the trade-off between the performance and reliability in the ferroelectric devices. © 2022 IEEE.

关键词： Economic and social effects

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