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International Conference on integrated circuits and Microsystems (ICICM)

作者： Haoyan Liu Chun Li Wenwu Wang Yongliang Li School of integrated Circuits University of Chinese Academy of Sciences Beijing China Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781665460583

A novel SiGe fin on insulator (FOI) structure and its FinFET device on a bulk-Si substrate are extensively investigated in this paper. A high-quality SiGe layer epitaxial grown on a Si substrate is realized and a similar notched SiGe/Si fin profile is attained by using the three-step etching process of previous Si FOI structure. However, direct isolation oxidation cannot be applied to get an isolation structure due to lower SiGe thermal stability. Therefore, a SiN film protection post SiGe fin reveal strategy (scheme A) and SiN spacer protection post step-I etching strategy (scheme B) are developed to realize the SiGe FOI structure. Although scheme A can attain a fully oxidation of notched Si fin and no oxidation of SiGe fin, the SiGe fin is distorted due to the large stress induced by the high temperature spike anneal treatment. Compared with the scheme A, a fully isolation of the SiGe fin structure can be achieved and the SiGe fin can maintain well without any oxidation or distorted profile impact. Meanwhile, SiGe FOI FinFET device is also successfully prepared by using the scheme B, which further verifies that it is a practical and effective solution for the fabrication of SiGe FOI structure.

关键词： Micromechanical devices FinFETs Oxidation Silicon Etching Thermal stability Substrates

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A novel PNPN bipolar selector for RRAM array application

A novel PNPN bipolar selector for RRAM array application

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International Conference on Solid-State and integrated circuit Technology

作者： Ming Wang Xiaodong Tong Hangbing Lv Shibing Long Qi Liu Xiaoxin Xu Guoming Wang Hongtao Liu Meiyun Zhang Ming Liu Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Chinese Academy of Sciences Beijing China Integrated Circuit Advanced Process Center Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781479932849

We herein present an asymmetric I-V characteristics PNPN selector for bipolar resistive switching (RS) memory crossbar array application. Negative curve of the PNPN selector with high current density was demonstrated, which is analogous to threshold switching (TS). Moreover, latch-up voltage is designable by tuning the p/n-region doping and length. On the other hand, the positive behavior is designed to nonlinear curve by barrier lowering mechanism. The conceptual framework to suppress the sneak-current was demonstrated by integrating a bipolar RS memory element with the PNPN selector, indicating that the PNPN selector has good potential for future high-density cross-point application.

关键词： Arrays Switches Epitaxial growth Hafnium compounds Abstracts Annealing

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Performance Enhancement and Mechanism Analysis of IGZO Thin-Film Transistors Utilizing Interdigital Structure

Performance Enhancement and Mechanism Analysis of IGZO Thin-...

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17th Symposium on Thin Film Transistors, TFT 2024, held at the PRiME 2024 Meeting

作者： Lu, Yupeng Yan, Gangping Yang, Yanyu Sun, Peng Luo, Jie Bao, Yunjiao Niu, Chuqiao Wang, Peng Xu, Gaobo Wang, Guilei Chao, Zhao Yin, Huaxiang Luo, Jun School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Beijing Superstring Academy of Memory Technology China

ISBN: (纸本)9781623326630

—This study investigates the issue of leakage current reduction in oxide semiconductor thin-film transistors (TFTs) with interdigital structures. Electrical measurements clearly demonstrate that the leakage current of interdigitated IGZO devices decreases as the on/off ratio increases. To explore the reasons behind the reduction in leakage current, we conducted two-dimensional device simulations. The results confirm that the use of interdigital structures can influence the electric field distribution within the device channel, introducing shielding electric fields. As the number of interlayer structures between the source and drain increases, the shielding electric fields proportionally increase. Additionally, interdigitated IGZO devices exhibit a large on/off ratio exceeding 2.7×1010, an ultra-low leakage current of less than 3×10-16 A/μm, and a high saturation mobility of 9.4 cm2/Vs. These findings provide valuable insights for designing low-power, high-performance devices based on IGZO. ©The Electrochemical Society.

关键词： Thin film transistors

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Key process Technologies for Stacked Double Si0.7Ge0.3Channel Nanowires Fabrication

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ECS Journal of Solid State Science and Technology 2020年第6期9卷

作者： Li, Yongliang Cheng, Xiaohong Zhong, Zhaoyang Zhang, Qingzhu Wang, Guilei Li, Yan Li, Junjie Ma, Xueli Wang, Xiaolei Yang, Hong Luo, Jun Yin, Huaxiang Wang, Wenwu Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Science Beijing100029 China School of Applied Science Beijing Information Science and Technology University Beijing100192 China

In this study, key process technologies, such as epitaxy growth, fin structure etching, and selective etching of stacked Si/SiGe multilayer for the fabrication of double Si0.7Ge0.3 channel nanowires under a reasonable thermal budget are systematically investigated. A high crystal quality two-period Si0.7Ge0.3/Si stacked multilayer epitaxially grown with thin and distinct interfaces is first realized on a Si substrate. A vertical profile of the fin structure of Si0.7Ge0.3/Si stacked multilayer is achieved using HBr/O2/He plasma after fine-tuning the etching process. In addition, the highest tolerable temperature of 850 C for the Si0.7Ge0.3/Si stacked multilayer under rapid thermal annealing is confirmed based on the crystal quality, Si0.7Ge0.3/Si interface, and Ge diffusion. Moreover, a rectangular Si0.7Ge0.3 extremity profile is realized by optimizing the concentration and temperature of tetramethyl ammonium hydroxide solution to achieve selective etching of Si to Si0.7Ge0.3 for Si0.7Ge0.3/Si stacked multilayers. Finally, a vertically stacked double Si0.7Ge0.3 nanowire structure is successfully prepared using these newly developed process technologies. © 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

关键词： Fabrication

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Improve the Breakdown Voltage of Silicon Pixel Sensor With Optimized Multi-Guard Rings

Improve the Breakdown Voltage of Silicon Pixel Sensor With O...

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China Semiconductor Technology International Conference (CSTIC)

作者： Peng Sun Gaobo Xu Jianyu Fu Mingzheng Ding Yinan Yan Luoyun Zhang Huaxiang Yin Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China

The silicon pixel sensor (SPS) for X-ray free electron laser detection requires ultra-high operating voltage. In this paper, for an optimized multi-guard rings, a SPS with ultra-high breakdown voltage and low leakage is obtained. The effect of the arrangement of the multi-guard rings on the SPS breakdown is investigated by TCAD simulation. It is found that SPS with a gradually increasing gap from inner ring to outer ring has a higher breakdown voltage. Guided by this, the multi-guard ring structure of SPS is optimized and applied into the manufacture of devices. Finally, the optimized SPS exhibits an ultra-high breakdown voltage of exceeding 1,800 V; and the dark current of per pixel is approximately 2.0 pA at a bias voltage of 1,000 V.

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Fast optical proximity correction based on graph convolution network 34

Fast optical proximity correction based on graph convolution...

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Optical Microlithography XXXIV 2021

作者： Zhang, Shengen Ma, Xu Zhang, Junbi Chen, Rui Pan, Yihua Yu, Chengzhen Dong, Lisong Wei, Yayi Arce, Gonzalo R. Key Laboratory of Photoelectronic Imaging Technology and System Ministry of Education of China School of Optics and Photonics Beijing Institute of Technology Beijing100081 China Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Department of Electrical and Computer Engineering University of Delaware NewarkDE19716 United States

ISBN: (数字)9781510640603

ISBN: (纸本)9781510640597

Optical proximity correction (OPC) is regarded as one of the most important computational lithography approaches to improve the imaging performance of sub-wavelength lithography process. Traditional OPC methods are computationally intensive to pre-warp the mask pattern based on inverse optimization models. This paper develops a new kind of pixelated OPC method based on an emerging machine learning technique namely graph convolutional network (GCN) to improve the computational efficiency. In the proposed method, the target layout is raster-scanned into pixelated image, and the GCN is used to predict its corresponding OPC solution pixel by pixel. For each layout pixel, we first sub-sample its surrounding geometrical features using an incremental concentric circle sampling method. Then, these sampling points are converted into graph signals. Then, the GCN model is established to process the pre-defined graph signals and predict the central pixel within the sampling region on the OPC pattern. After that, the GCN is moved to predict the OPC solution of the next layout pixel. The proposed OPC method is validated and discussed based on a set of simulations, and is compared with traditional OPC methods. © 2021 SPIE.

关键词： Pixels

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Robustly stable intermediate memory states in HfO_(2)-based ferroelectric field-effect transistors

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Journal of Materiomics 2022年第3期8卷 685-692页

作者： Chen Liu Binjian Zeng Siwei Dai Shuaizhi Zheng Qiangxiang Peng Jinjuan Xiang Jianfeng Gao Jie Zhao Jincheng Zhang Min Liao Yichun Zhou Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education School of Materials Science and EngineeringXiangtan UniversityXiangtan411105China College of Civil Engineering and Mechanics Xiangtan UniversityXiangtan411105China School of Advanced Materials and Nanotechnology Xidian UniversityXi'an710071China Integrated Circuit Advanced Process R&D Center and Institute of Microelectronics of Chinese Academy of Sciences Beijing100029China State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi'an710071China

Multilevel ferroelectric field-effect transistors(FeFETs)integrated with HfO_(2)-based ferroelectric thin films demonstrate tremendous potential in high-speed massive data storage and neuromorphic computing ***,few works have focused on the stability of the multiple memory states in the HfO_(2)-based *** we firstly report the write/read disturb effects on the multiple memory states in the Hf_(0.5)Zr_(0.5)O_(2)(HZO)-based *** multiple memory states in HZO-based FeFETs do not show obvious degradation with the write and read disturb ***,the retention characteristics of the intermediate memory states in HZO-based FeFETs with unsaturated ferroelectric polarizations are better than that of the memory state with saturated ferroelectric *** the deep analysis of the operation principle of in HZO-based FeFETs,we speculate that the better retention properties of intermediate memory states are determined by the less ferroelectric polarization degradation and the weaker ferroelectric polarization *** experimental and theoretical evidences confirm that the long-term stability of the intermediate memory states in HZO-based FeFETs are as robust as that of the saturated memory state,laying a solid foundation for their practical applications.

关键词： Ferroelectric fieldeffect transistors(FeFETs) Hf_(0.5)Zr_(0.5)O_(2)(HZO) Multiple memory states Write/read disturb Retention

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Performance-enhanced heat converter used in FPA utilizing a SiOx/Al corrugated micro-cantilever actuator

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Key Engineering Materials 2015年 645卷 951-956页

作者： Yanmei, Kong Ruiwen, Liu Binbin, Jiao Dike, Lu Encheng, Zhu Qiangsheng, Fu Dapeng, Chen Integrated Circuit Advanced Process Center Key Lab of Microelectronics Device and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Kunshan MicroOptica Electronic Co.Ltd Jiangsu China

This paper proposes a performance-enhanced SiOx/Al corrugated micro-cantilever structure, which transfers heat to mechanical deformation. Analytical simulations are carried out using the Finite Element Method (FEM), compared to the traditional straight bi-material structure(TSBMS) with same length L, the corrugated bi-material structures(CBMS) have higher temperature response sensitivity ST and lower stiffness factor K. Furthermore, two types of cantilever was fabricated, and the test result verifies the change of the stiffness factor K. Finally, the thermal-mechanical uncooled infrared focal plane array (FPA) with CBMS was fabricated, and the test results show that the bending response of the CBMS is about 2 times greater than TSBMS with same length. The CBMS proposed in this paper could be used widely in MEMS apparatus field based on bimaterial microcantilever. © (2015) Trans Tech Publications, Switzerland.

关键词： Finite element method

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Novel Stacked Sige/Si Finfet Device with Subthreshold Swing of 68mv/Dec Using Optimized Thermal Budget and Channel Passivation Technology

SSRN

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SSRN 2022年

作者： Zhao, Fei Li, Yongliang Zhang, JiaYi Jia, Xiaofeng Chen, Anlan Cheng, Xiaohong Wu, Yongqin Yin, Huaxiang Zheng, Kai Luo, Jun Bu, Weihai Kang, Jin Wang, WenWu Ye, Tianchun Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Science Beijing100029 China School of integrated Circuits University of Chinse Academy of Sciences Beijing100049 China Corporation Beijing100176 China

In this study, the optimized thermal budget and channel passivation technology for the novel stacked SiGe/Si FinFET are investigated. A vertical stacked SiGe/Si fin with no significantly SiGe layer oxidation loss is achieved by employing a rapid thermal annealing (RTA) STI densification process at 850 °C for 30 s. Moreover, to improve the electrical performance of the stacked SiGe/Si FinFET, the channel passivation technology is developed by using O3 passivation and thin Al2O3 dielectric insertion layer between the SiGe and HfO2. As a result, the electrical performance for the stacked SiGe/Si FinFET device is significantly improved. For example, its SS can be reduced from the 200 mV/dec to 68 mV/dec, which is mainly attributed to the channel passivation resulting in the reduction of Dit. Therefore, the above newly developed thermal budget and channel passivation technology are practical for the stacked SiGe/Si FinFET device. © 2022, The Authors. All rights reserved.

关键词： FinFET

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Malus-metasurface-assisted polarization multiplexing

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Light(Science & Applications) 2020年第1期9卷 1038-1046页

作者： Liangui Deng Juan Deng Zhiqiang Guan Jin Tao Yang Chen Yan Yang Daxiao Zhang Jibo Tang Zhongyang Li Zile Li Shaohua Yu Guoxing Zheng Hongxing Xu Cheng-Wei Qiu Shuang Zhang Electronic Information School Wuhan University430072 WuhanChina NOEIC State Key Laboratory of Optical Communication Technologies and NetworksWuhan Research Institute of Posts&Telecommunications430074 WuhanChina School of Physics and Technology Wuhan University430072 WuhanChina Department of Electrical and Computer Engineering National University of Singapore4 Engineering Drive 3Singapore 117583Singapore Integrated Circuit Advanced Process Center Institute of MicroelectronicsChinese Academy of Sciences100029 BeijingChina School of Physics&Astronomy University of BirminghamBirmingham B152TTUK

Polarization optics plays a pivotal role in diffractive,refractive,and emerging flat optics,and has been widely employed in contemporary optical industries and daily *** polarization manipulation leads to robust control of the polarization direction of ***,polarization control has been studied largely independent of the phase or intensity of ***,we propose and experimentally validate a Malus-metasurface-assisted paradigm to enable simultaneous and independent control of the intensity and phase properties of light simply by polarization *** orientation degeneracy of the classical Malus’s law implies a new degree of freedom and enables us to establish a one-to-many mapping strategy for designing anisotropic plasmonic nanostructures to engineer the Pancharatnam–Berry phase profile,while keeping the continuous intensity modulation *** proposed Malus metadevice can thus generate a near-field greyscale pattern,and project an independent far-field holographic image using an ultrathin and single-sized *** concept opens up distinct dimensions for conventional polarization optics,which allows one to merge the functionality of phase manipulation into an amplitudemanipulation-assisted optical component to form a multifunctional nano-optical device without increasing the complexity of the *** can empower advanced applications in information multiplexing and encryption,anti-counterfeiting,dual-channel display for virtual/augmented reality,and many other related fields.

关键词： optics enable unchanged

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