检索结果-内蒙古大学图书馆

Correcting on-chip distortion of control pulses with silicon spin qubits

Chinese Physics B 2025年第1期34卷 265-271页

作者： Ming Ni Rong-Long Ma Zhen-Zhen Kong Ning Chu Wei-Zhu Liao Sheng-Kai Zhu Chu Wang Gang Luo Di Liu Gang Cao Gui-Lei Wang Hai-Ou Li Guo-Ping Guo CAS Key Laboratory of Quantum Information University of Science and Technology of China(USTC)Hefei 230026China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of ChinaHefei 230026China Integrated Circuit Advanced Process Research and Development Center Institute of MicroelectronicsChinese Academy of Sciences(CAS)Beijing 100029China Hefei National Laboratory Hefei 230088China Beijing Superstring Academy of Memory Technology Beijing 100176China Origin Quantum Computing Company Limited Hefei 230026China

In semiconductor quantum dot systems,pulse distortion is a significant source of coherent errors,which impedes qubit characterization and ***,we demonstrate two calibration methods using a two-qubit system as the detector to correct distortion and calibrate the transfer function of the control *** methods are straightforward to implement,robust against noise,and applicable to a wide range of qubit *** two methods differ in correction accuracy and *** first,coarse predistortion(CPD)method,partially mitigates *** second,all predistortion(APD)method,measures the transfer function and significantly enhances exchange oscillation *** methods use exchange oscillation homogeneity as the metric and are suitable for any qubit driven by a diabatic *** believe these methods will enhance qubit characterization accuracy and operation quality in future applications.

关键词： quantum computation quantum dot pulse distortion

来源：评论

学校读者我要写书评

暂无评论

A New Thin Film Growth/Regrowth process Design and Experimental Comparisons with Molecular Dynamic Analyses

引用

MRS Online Proceedings Library 1992年第1期283卷 615-620页

作者： Takako K. Okada Shigeru Kambayashi Moto Yabuki Yoshitaka Tsunashima Yuichi Mikata Shinji Onga ULSI Research Center Toshiba Corporation Kawasaki Japan Integrated Circuit Advanced Process Engineering Department Toshiba Corporation Japan

A new concept of thin film growth/regrowth process design taking atomic motions into account using molecular dynamics is proposed. In the system, a modified many-body Tersoff-type interatomic potential for silicon has been adopted. The mathematical derivation of higher order derivatives was rigorously treated. Among many applications, the solid phase growth process was studied. It has been found from simulation studies that the solid phase growth of crystalline silicon proceeded along the [110] direction layer by layer. Furthermore, it has been obtained that all the atoms are activated in tin extremely thin amorphous silicon film. Based on simulated results, an experiment using an extremely thin amorphous silicon film was carried out. It has been found that the perfect spherical silicon crystals with a uniform size and spacing can be grown from a thin amorphous silicon film.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Malus-metasurface-assisted polarization multiplexing

引用

Light(Science & Applications) 2020年第1期9卷 1038-1046页

作者： Liangui Deng Juan Deng Zhiqiang Guan Jin Tao Yang Chen Yan Yang Daxiao Zhang Jibo Tang Zhongyang Li Zile Li Shaohua Yu Guoxing Zheng Hongxing Xu Cheng-Wei Qiu Shuang Zhang Electronic Information School Wuhan University430072 WuhanChina NOEIC State Key Laboratory of Optical Communication Technologies and NetworksWuhan Research Institute of Posts&Telecommunications430074 WuhanChina School of Physics and Technology Wuhan University430072 WuhanChina Department of Electrical and Computer Engineering National University of Singapore4 Engineering Drive 3Singapore 117583Singapore Integrated Circuit Advanced Process Center Institute of MicroelectronicsChinese Academy of Sciences100029 BeijingChina School of Physics&Astronomy University of BirminghamBirmingham B152TTUK

Polarization optics plays a pivotal role in diffractive,refractive,and emerging flat optics,and has been widely employed in contemporary optical industries and daily *** polarization manipulation leads to robust control of the polarization direction of ***,polarization control has been studied largely independent of the phase or intensity of ***,we propose and experimentally validate a Malus-metasurface-assisted paradigm to enable simultaneous and independent control of the intensity and phase properties of light simply by polarization *** orientation degeneracy of the classical Malus’s law implies a new degree of freedom and enables us to establish a one-to-many mapping strategy for designing anisotropic plasmonic nanostructures to engineer the Pancharatnam–Berry phase profile,while keeping the continuous intensity modulation *** proposed Malus metadevice can thus generate a near-field greyscale pattern,and project an independent far-field holographic image using an ultrathin and single-sized *** concept opens up distinct dimensions for conventional polarization optics,which allows one to merge the functionality of phase manipulation into an amplitudemanipulation-assisted optical component to form a multifunctional nano-optical device without increasing the complexity of the *** can empower advanced applications in information multiplexing and encryption,anti-counterfeiting,dual-channel display for virtual/augmented reality,and many other related fields.

关键词： optics enable unchanged

来源：评论

学校读者我要写书评

暂无评论

Reconfigurable continuous-zoom metalens in visible band

引用

Chinese Optics Letters 2019年第11期17卷 69-74页

作者： Yuan Cui Guoxing Zheng Ming Chen Yilun Zhang Yan Yang Jin Tao Taotao He Zile Li Electronic Information School Wuhan UniversityWuhan 430072China NOEIC State Key Laboratory of Optical Comm unication Technologies and NetworksWuhan Research Institute of Posts and TelecommunicationsWuhan 430074China Photonics Research Centre Guilin University of Electronic TechnologyGuilin 541004China Integrated Circuit Advanced Process Center Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China

The design of a conventional zoom lens is always challenging because it requires not only sophisticated optical design strategy, but also complex and precise mechanical structures for system adjustment. Here, we propose a continuous-zoom lens consisting of two chiral geometric metasurfaces with dielectric nanobrick arrays sitting on a transparent substrate. The metalens can continuously vary the focal length by rotating either of the two metasurfaces around its optical axis without changing any other conditions. Due to the polarization dependence of the geometric metasurface, the positive and negative polarities are interchangeable in one identical metalens only by changing the handedness of the incident circularly polarized light, which can generate varying focal lengths ranging from-∞ to +∞ in principle.

关键词： continuous visible rotating

来源：评论

学校读者我要写书评

暂无评论

Recent progress on submicron electron beam lithography

Recent progress on submicron electron beam lithography

引用

Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V 1986

作者： Takigawa, Tadahiro Shimazaki, Kuniya Kusui, Naoki VLSI Research Center Toshiba R and D Center Toshiba Corporation 1 Komukai Toshibacho Saiwai-ku Kawasaki-city210 Japan Mask Engineering Section Integrated Circuit Advanced Process Engineering Deaprtment Toshiba Corporation 1 Komukai Toshibacho Saiwai-ku Kawasaki-city210 Japan Electron Machine Department Advanced Machine and Equipment Division Toshiba Machine Co. Ltd. 2068-3 Ooka Numazu-city Shizuoka-ken410 Japan

In order to fabricate submicron pattern, total electron beam (EB) lithography system has been developed. Upper submicron pattern will be realized by optical lithography, which requires reticle with high accuracy. An EB writing system, EBM-130/40, has the performance of drawing capability of 4 M bit DRAM reticle pattern in about 40 minutes. The EB system incorporated with peripheral technologies including data compaction conversion software, reticle inspection system, APC-130R, and EBR-9 resist process can produce advanced reticles of number of about 600 per month. For lower submicron pattern formation, next generation lithography system is required. The EBM-130V is the variable shaped EB system with high acceleration voltage of 50 kV and high dosage of 50 μC/cm2 for direct writing and X-ray mask fabrication for development of the high bit density VLSI pattern. This system makes possible EB/optical combined lithography. Its metrology function allows it to measure X-ray mask distortion. © 1986 SPIE. All rights reserved.

关键词： Electron beams

来源：评论

学校读者我要写书评

暂无评论

Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition

arXiv

引用

arXiv 2022年

作者： Kong, Zhenzhen Li, Zonghu Cao, Gang Su, Jiale Zhang, Yiwen Liu, Jinbiao Liu, Jingxiong Ren, Yuhui Wei, Laiming Guo, Guoping Wu, Yuanyuan Radamson, Henry H. Li, Junfeng Wu, Zhenhua Li, Haiou Yang, Jiecheng Zhao, Chao Wang, Guilei Integrated Circuit Advanced Process R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China School of Integrated Circuits University of Chinese Academy of Sciences Beijing100049 China CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei230026 China Hefei National Laboratory Hefei230088 China School of Advanced Manufacturing Engineering Hefei University Hefei230601 China Origin Quantum Computing Company Limited Hefei230026 China Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou510535 China Beijing Superstring Academy of Memory Technology 100176 China

We fabricate an undoped Ge quantum well under a 30 nm relaxed Ge0.8Si0.2 shallow barrier. The bottom barrier contains Ge0.8Si0.2 (650 ℃) followed by Ge0.9Si0.1 (800 ℃) such that variation of Ge content forms a sharp interface that can suppress the threading dislocation density (TDD) penetrating into the undoped Ge quantum well. The Ge0.8Si0.2 barrier introduces enough in-plane parallel strain (Ε strain -0.41%) in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel obtain an ultrahigh two-dimensional hole gas (2DHG) mobility over 2×106 cm2/Vs and a very low percolation of 5.625 × 1010cm−2. A tunable fractional quantum Hall effect at high densities and high magnetic fields has also been observed. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum *** Codes 81-05, 81V70 © 2022, CC BY-NC-ND.

关键词： Germanium

来源：评论

学校读者我要写书评

暂无评论

Reconfigurable continuous-zoom metalens in visible

arXiv

引用

arXiv 2019年

作者： Cui, Yuan Zheng, Guoxing Chen, Ming Zhang, Yilun Yang, Yan Tao, Jin He, Taotao Li, Zile Electronic Information School Wuhan University Wuhan430072 China NOEIC State Key Laboratory of Optical Communication Technologies and Networks Wuhan Research Institute of Posts and Telecommunications Wuhan430074 China Photonics Research Centre Guilin University of Electronic Technology Guilin541004 China Integrated Circuit Advanced Process Center Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China

Design of a conventional zoom lens is always challengeable because it requires not only sophisticated optical design strategy, but also complex and precise mechanical structures for lens adjustment. In this paper, we propose a continuous zoom lens consisting of two chiral geometric metasurfaces with dielectric nanobrick arrays sitting on a transparent substrate. The metalens can continuously vary the focal length by rotating either of the two metasurfaces along its optical axis without changing any other conditions. More importantly, because of the polarization dependence of the geometric metasurface, the positive and negative polarities are interchangeable in one identical metalens only by changing the handedness of the incident circularly polarized light, which can generate varyingfocal lengths ranging from ..,V to +.,V in principle. On account of its advantages of compactness, flexibility and easiness in design, the proposed zoom metalens can provide new perspectives for the development of continuous-zoom optical system and it can find applications in fields which require ultracompact and continuous-zoom imaging and reconfigurable beam wavefront steering. Copyright © 2019, The Authors. All rights reserved.

关键词： Optical design

来源：评论

学校读者我要写书评

暂无评论

A novel strategy for GaN-on-diamond device with a high thermal boundary conductance

arXiv

引用

arXiv 2021年

作者： Mu, Fengwen Xu, Bin Wang, Xinhua Gao, Runhua Huang, Sen Wei, Ke Takeuchi, Kai Chen, Xiaojuan Yin, Haibo Wang, Dahai Yu, Jiahan Suga, Tadatomo Shiomi, Junichiro Liu, Xinyu High-Frequency High-Voltage Device and Integrated Circuits RandD Center Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Department of Mechanical Engineering The University of Tokyo Tokyo Bunkyo113-8656 Japan University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Collaborative Research Center Meisei University Tokyo Hino-shi191-8506 Japan Integrated Circuit Advanced Process RandD Center Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China

To achieve high device performance and high reliability for the gallium nitride (GaN)-based high electron mobility transistors (HEMTs), efficient heat dissipation is important but remains challenging. Enormous efforts have been made to transfer a GaN device layer onto a diamond substrate with a high thermal conductivity by bonding. In this work, two GaN-diamond bonded composites are prepared via modified surface activated bonding (SAB) at room temperature with silicon interlayers of different thicknesses (15 nm and 22 nm). Before and after post annealing process at 800 oC, thermal boundary conductance (TBC) across the bonded interface including the interlayer and the stress of GaN layer are investigated by time-domain thermoreflectance and Raman spectroscopy, respectively. After bonding, the 15 nm Si interlayer achieved a higher TBC. The post-annealing significantly increased the TBC of both interfaces, while the TBC of 22 nm silicon interlayer increased greater and became higher than that of 15 nm. Detailed investigation of the microstructure and composition of the interfaces were carried out to understand the difference in interfacial thermal conduction. The obtained stress was no more than 230 MPa for both before and after the annealing, and this high thermal stability of the bonded composites indicates that the room temperature bonding can realize a GaN-on-diamond template suitable for further epitaxial growth or device process. This work brings a novel strategy of SAB followed by high-temperature annealing to fabricate a GaN-on-diamond device with a high TBC. © 2021, CC BY.

关键词： Gallium nitride

来源：评论

学校读者我要写书评

暂无评论

A device simulation of the BBT effect in flash memory cells and implications for the development of high-reliability memory cells

引用

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS 1996年第11期79卷 51-57页

作者： Hayashi, T Fukuda, K Ohno, M Nishi, K Kita, A VLSI R&D Center OKI Electric Industry Company Ltd. Hachioji-shi Japan 193 Graduated from the Science University of Tokyo Dept. of Applied Physics in 1986 and joined Oki Electric. Since then he has been engaged in research on the reliability of MOS transistors and silicon oxide films. Since 1994 he has been engaged in the development of flash memory. He is a member of the Applied Physics Society. Graduated from the University of Tokyo Dept. of Applied Physics in 1983 and joined Oki Electric in 1985. Since then he has been engaged in research on the semiconductor process and device simulation. In 1990 he participated in joint research at the Technical University of Aachen. He is a member of the Applied Physics Society. Graduated from the Tokyo University of Agriculture and Technology Dept. of Electrical Engineering in 1980 and completed an MS course in 1983. In 1986 he completed the doctoral course at Shizuoka University. He then joined Oki Electric where he has been engaged in research on ULSI processes. He is now a manager responsible for flash memory at the VLSI R&D Center. He holds a doctorate in engineering. He is a member of the Applied Physics Society. Graduated from the University of Tokyo Dept. of Applied Physics in 1973 and joined Oki Electric. He was engaged in the development of integrated circuit logic simulation technology and bipolar process technology and since 1980 he has been engaged in research on process/device simulation and modeling. Presently he is a senior manager at the VLSI R&D Center. In 1982–1984 he was a Visiting Scholar at MIT. He holds a doctorate in engineering. He is a member of the Applied Physics Society and a senior member of IEEE. Graduated from Tokyo Institute of Technology Dept. of Chemical Engineering in 1978 and completed the MS program in 1930. In that year he joined Oki Electric. Since then he has been engaged in CMOS process design for DRAM and flash memory. He is now a manager at the VLSI R&D Center. He is a member of the Applied Physics Society.

In order to analyze the BBT (band-to-band tunneling) phenomenon in flash memory cells by simulation, a new model is proposed, which improves on the BBT model by introducing the concept of ''average electric field.'' This model agrees well with the measured results in a wide drain N-concentration range. Using this model, the reliability of memory cells is analyzed. It is found that the difference of the amount of BBT generation does not directly affect the endurance characteristics but does affect the disturb characteristics. The same model can be used to analyze problem points of the present cells and to estimate the BBT current of next-generation devices accurately.

关键词： band-to-band tunneling flash memory simulation endurance characteristics

来源：评论

学校读者我要写书评

暂无评论

THE AMERICAN SOCIETY OF NAVAL ENGINEERS takes great pleasure in presenting: THE GOLD MEDAL AWARD FOR 1991

引用

Naval Engineers Journal 1992年第4期104卷

作者： CAPTAIN CLARK GRAHAM USN Captain Clark “Corky” Graham throughout his naval career has been a major force in the pursuit of a technology-based vision of the Navy of the future and the development of an engineering bridge to turn the vision into a reality. After an already distinguished naval career he was assigned to NavSea as Ship Design Manager and Technical Director for the Navy's newest destroyer the USSArleigh Burke(DDG-51). He was a major contributor to the many technical innovations that made this ship one of the most effective combatants in the Fleet. Upon return to MIT as a teacher and head of the Navy Program he continued to espouse the virtues of systems engineering instilling in his students the need to continually question old paradigms and to examine and assess the merits of new and innovative approaches to ship design. During his tour as Commander of the David Taylor Research Center he established a broad-based strategic planning process for exploring technology options and issues for the fleet of the future. He stimulated the Center's technologists and managers to challenge current paradigms and to make ships and ship systems more affordable without sacrifice in mission capabilities. He provided a collaborative systems oriented culture that addressed long range fleet operational and affordability goals. This led to the development of a battleforce design incorporating a multi-purpose modular ship concept called Carrier of Large Objects (CLO) double-hull structural concepts and an emphasis on technologies and processes to enhance the affordability of future ships. He also waged a successful campaign to convince higher authority of the merits of an integrated electric drive for ships. This ultimately led to his present assignment as Manager of NavSea's Advanced Surface Ship Machinery Program. Capt. Graham has laid a technological foundation for the Navy to meet the challenges of the future in a world of profound geopolitical change. Perhaps of even greater importance he articulated his ideas and philosophy to a

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：