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Reuse of sodium–doped iridium oxide nanoparticles as a bio–stimulating electrode by a chemical and electrochemical recovery process

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Ceramics International 2024年第4期50卷 6220-6228页

作者： Tso, Kuang-Chih Chen, Chieh-Hsuan Chen, Po-Chun Li, Shao-Sian Chen, Jeng-Lung Ohta, Jun Wu, Pu-Wei Division of Materials Science Graduate School of Science and Technology Nara Institute of Science and Technology Nara630-0192 Japan Graduate Degree Program of Science and Technology of Accelerator Light Source National Yang Ming Chiao Tung University Hsinchu300 Taiwan Department of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu300 Taiwan Institute of Materials Science and Engineering National Taipei University of Technology Taipei106 Taiwan National Synchrotron Radiation Research Center Hsinchu300 Taiwan

A sequential chlorination and electrochemical reduction process is demonstrated to convert Na–doped iridium oxide nanoparticles into useful IrIIICl63−(aq) serving as the precursor for the fabrication of bio–stimulating electrode. The Na–doped iridium oxide nanoparticles are treated in 35 wt% hydrochloric acid at 70 °C for 18 h to form IrIVCl62−(aq) with pH of 0.3, so the latter could be readily reduced to IrIIICl63−(aq) at a potentiostatic mode of 0.6 V (vs. SCE). The oxidation state and the nature of complexing ligands for the regenerated IrIIICl63− and IrIVCl62−, as well as commercially available IrIIICl63− are validated by X–ray Absorption Spectroscopy. UV–Vis profiles of regenerated IrIVCl62−(aq) are recorded and the absorbance at 487 nm signal is benchmarked against that of standard IrIVCl62−(aq) to obtain the effective regeneration ratio of 68.6%. X–ray diffraction patterns of Na–doped iridium oxide nanoparticles before and after the annealing treatment indicate the amorphous structure facilitates the chlorination step. The regenerated IrIIICl63− is reused to synthesize Na–doped iridium oxide thin film serving as a bio–stimulating electrode for implantable bio–electronics. The regenerated Na–doped iridium oxide thin film reveals a charge-storage capacity of 0.32 mC/cm2-nm and impressive stability that are comparable to those of fresh Na–doped iridium oxide thin film derived from commercially available IrIIICl63−. © 2023 Elsevier Ltd and Techna Group S.r.l.

关键词： Transition metal oxides

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Preparation of LFP-based cathode materials for lithium-ion battery applications

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materials Today: Proceedings 2022年 65卷 2347-2350页

作者： Suttison, Suchanat Pengpat, Kamonpan Intatha, Uraiwan Fan, Jinchen Zhang, Wei Eitssayeam, Sukum Master's Degree Program in Materials Science Faculty of Science Chiang Mai University Chiang Mai 50200 Thailand Graduate School Chiang Mai University Chiang Mai Thailand Department of Physics and Materials Science Faculty of Science Chiang Mai University Thailand Center of Innovative Materials for Sustainability School of Science Mae Fah Luang University Chiang Rai 57100 Thailand School of Materials and Chemistry University of Shanghai for Science and Technology Shanghai 200093 China Department of Engineering Mechanics Dalian University of Technology Dalian 116024 China

Lithium-ion batteries (LIB) have developed into the mainstream power source of energy storage devices due to their advantages: high power density, high power, long service life, and less pollution. This materials development for LFP batteries was considered successful in synthesizing powder. Here we show that three synthesis conditions were performed. LFP doped NiO, NMC, and (NH4)2HPO4 were synthesized by the nitrogen gas flow method. LFP-doped NiO was burned at 600 °C and 700 °C for five h. NMC doped with LFP burned at 550 °C for five h, and NMC-doped LFP and (NH4)2HPO4 were burned at 550 °C and 600 °C for five h. The structure and morphology of the material were examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). © 2022

关键词： Lithium-ion batteries

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Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length

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ECS Journal of Solid State science and Technology 2023年第3期12卷 035001-035001页

作者： Chen, Yu-Lin Yeh, Wen-Kuan Chen, Ke-Horng Hsu, Heng-Tung Hsu, Chin-Tsai Godwin Raj, D. Chou, Hung-Ting Wu, Jui-Sheng Yu, Tien-Han Godfrey, D. Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan International College of Semiconductor Technology National Yang Ming Chiao Tung University Hsinchu Taiwan National Applied Research Laboratories Hsinchu Taiwan Dept of ECE Amal Jyothi College of Engineering Kerala India National Chung Shan Institute of Science and Technology Taoyuan Taiwan Deparment of Materials Science and Engineering National Yang Ming Chiao Tung University Hsinchu Taiwan Dept of Electronics and Communication Engineering Dayananda Sagar University Bengaluru India

Device degradation due to hot carrier injection (HCI) in different Y-gate HEMT devices is thoroughly analyzed. To further understand the HCI reliability of the Y-gate HEMT devices, the device is fabricated with AlGaN/GaN structure with different top lengths (Ltop). An HCI stress time of 6000 s was conducted on these devices, while V t stability in other stress time domains, leakage current, and transconductance degradation are also discussed. In this work, we have demonstrated that increasing the LTop length could avoid the virtual gate effect and disperse the influence of the electric field under HCI stress. Furthermore, the effects of trapping in various locations, such as in the bulk SiN or AlGaN/GaN interface has been discussed. These trapping effects caused by the HCI stress might be the source of the Vth shift. Overall, The large Y-gate HEMT showed the lowest degradation of DC characteristics after the long HCI stress test. © 2023 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

关键词： High electron mobility transistors

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Performance comparison of InGaN-based 40–80 μm micro-LEDs fabricated with and without plasma etching

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materials Today Advances 2024年 22卷

作者： Lo, Yu-Yun Chen, Yi-Ho Hsu, Yun-Cheng Lee, Tzu-Yi Hung, Yu-Ying Kao, Yu-Cheng Zan, Hsiao-Wen Wuu, Dong- Sing Kuo, Hao-Chung Samukawa, Seiji Horng, Ray-Hua Institute of Electronics National Yang Ming Chiao Tung University 1001 University Road Hsinchu30010 Taiwan Department of Photonics College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan Department of Materials Science and Engineering National Chung Hsing University Taichung40227 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan Semiconductor Research Center Hon Hai Research Institute Taipei11492 Taiwan Institute of Communications Engineering National Yang Ming Chiao Tung University Hsinchu30010 Taiwan

The fabrication of InGaN-based blue 4✕4 array micro-LEDs (μLEDs) with 40 μm ✕40 μm chip size and 2✕2 array μLEDs with 80 μm ✕80 μm chip size etching by the inductive coupled plasma reactive ion etching (ICPRIE) and defect-free neutral beam etching (NBE) processes was studied in this work. In μLEDs of this size, the influence of defects formation in the sidewalls on EQE was evaluated. There was almost no difference in EQE between μLEDs array etched by the NBE process no matter 40 μm ✕40 μm and 80 μm ✕80 μm, but the dependence was observed in the ICPRIE. Even with this size, it was found that the size effect of EQE is smaller than that in case of using ICPRIE for defect-free neutral beam etching. This impact is substantial since μLED predominantly operated at low current density, around 1–5 A/cm2. Consequently, the reduction of defect density, encompassing both internal and sidewall defects, becomes imperative even in 40–80 μm InGaN-based μLEDs. This not only improves the overall efficiency of μLEDs but also fortifies the brightness stability of μLED displays if process etching by NBE. It was also found that the etching shape had an influence on EQE. It could be attributed to fact that the etching profile angle of NBE was more vertical than that of ICPRIE. Because the different angles of the mesa resulted in different light intensity. The μLEDs emitting with a wavelength of 450 nm, the light extraction efficiency and intensity at a mesa angle 58° of NBE etching μLEDs was about 8% lower than those of an angle (38°) of ICPRIE etching μLEDs by simulation. © The Authors

关键词： Light emitting diodes

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Reduction of interface defects in gate-recessed GaN HEMTs by neutral beam etching

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materials Today Advances 2024年 23卷

作者： Yu, Chia Hao Chiang, Wei Hsiang Chen, Yi-Ho Samukawa, Seiji Wuu, Dong Sing Chung, Chin-Han Hsiao, Ching-Lien Horng, Ray Hua Institute of Electronics National Yang Ming Chiao Tung University Department of Materials Science and Engineering National Chung Hsing University Graduate Degree Program of College of Electrical and Computer Engineering National Yang Ming Chiao Tung University Institute of Comunications Engineering National Yang Ming Chiao Tung University Department of Applied Materials and Optoelectronic Engineering National Chi Nan University International College of Semiconductor Technology National Yang Ming Chiao Tung University Thin Film Physics Division Department of Physics Chemistry and Biology (IFM) Linköping University

This study investigates and compares the impact of different etching techniques on the fabrication of GaN high electron mobility transistors (HEMTs) between the inductively coupled plasma reactive ion etching (ICP-RIE) and the neutral beam etching (NBE) for the gate recess. By conducting direct current analysis, it was found that devices manufactured using the NBE exhibited superior electrical performance as compared with those produced using the ICP-RIE. These enhanced electrical characteristics include a transconductance of up to 100.4 mS/mm, a threshold voltage (V_th) of −2.3 V, an on/off current ratio of 1.1 × 10⁹, a subthreshold swing (S.S.) of 99.63 mV/dec, and a remarkably low gate leakage current. Additionally, we noted varying degrees of hysteresis in the I–V characteristics were related to process disparities possibly leading to interface defects. Multi-frequency capacitance-voltage (C–V) measurements were used to identify the interface defects at the oxide/AlGaN interface of the gate. The results revealed that devices fabricated using the NBE exhibited a lower interface defect density as compared with those fabricated using the ICP-RIE, thereby elucidating the reduced hysteresis observed in the I–V characteristics. These findings indicated the significant advantages of the NBE process in the fabrication of GaN HEMTs. © 2024 The Authors

关键词： GaN HEMTs Gate recess Interface defects Multi-frequency C–V Neutral beam etching

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Title Biodecolorization of Biogas Power Plant Effluent Derived from Anaerobically Digested Distillery Wastewater by Natural Selected Pseudomonas Putida from Activated Sludge of the Wastewater Treatment Plant

SSRN

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SSRN 2023年

作者： Kumkaew, Ponruedee Suaisom, Pitchaya Mukkata, Kanokwan Koonaphapdeelert, Sirichai Sawatdeenarunat, Chayanon Nitayavardhana, Saoharit Master’s Degree Program in Environmental Engineering Faculty of Engineering Chiang Mai University Chiang Mai50200 Thailand Graduate School Chiang Mai University Chiang Mai50200 Thailand Energy Research and Development Institute – Nakornping Chiang Mai University Chiang Mai50200 Thailand Department of Environmental Engineering Faculty of Engineering Chiang Mai University Chiang Mai50200 Thailand Asian Development College for Community Economy and Technology Chiang Mai Rajabhat University Chiang Mai50300 Thailand Center of Excellence in Materials Science and Technology Chiang Mai University Chiang Mai50200 Thailand

The main aim of this study was to utilize naturally selected Pseudomonas putida strains isolated from activated sludge in a wastewater treatment plant, for the purpose of bioremediation of biogas effluent to remove organic content and color. Biogas effluent from anaerobically digestion of distillery wastewater treated with P. putida at the best evaluated condition (sample concentration of 50% v/v, agitation and aeration rates of 250 rpm and 1.0 vvm for 6 days) showed significant decolorization and organic removal efficacies of 34.29 ± 0.87% and 38.94 ± 0.63%, respectively. Bioremediation efficiency was dependent on bacterial growth which organic content in sample and dissolved oxygen during cultivation were key factors. The natural selected bacterium could tolerate higher organic content and work synergistically with other indigenous microorganisms found in the biogas effluent. Consequently, bioremediation of biogas effluent by natural selected P. putida is feasible to apply in biogas power plant where sterilization is not necessary in the process. © 2023, The Authors. All rights reserved.

关键词： Bioremediation

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Priority Screening of Contaminants of Emerging Concern (Cecs) in Surface Water: Comparing Cell-Based Bioassays and Exposure-Activity Ratios (Ears)

SSRN

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SSRN 2024年

作者： Heuvel, John Patrick Vanden Granda, Megan Ferguson, Francesca M. Glaberman, Scott R. Preisendanz, Heather E. Department of Veterinary and Biomedical Sciences Penn State University University ParkPA United States INDIGO Biosciences Inc. 3006 Research Drive State CollegePA16801 United States Institute for Sustainable Agricultural Food and Environmental Science The Pennsylvania State Univ. University ParkPA16802 United States Intercollege Graduate Degree Program in Ecology Penn State University University ParkPA United States Department of Entomology Penn State University University ParkPA United States Department of Agricultural and Biological Engineering Penn State University University ParkPA United States George Mason University Department of Environmental Science and Policy FairfaxVA United States Department of Veterinary and Biomedical Sciences Penn State University 122 Agricultural Sciences and Industry Building University ParkPA16802 United States

In this study, we compared a wide range of cell-based bioassays to the use of chemical analysis followed by exposure-activity ratio (EAR) and Toxicological Prioritization index (ToxPi) for prioritizing chemicals, sites, and hazard concerns in water samples. Surface water samples were collected from nine sites in three Central Pennsylvania streams and analyzed for a targeted list of compounds of emerging concern (CECs), including pesticides, personal care products, and pharmaceuticals. Cell-based reporter assays evaluated human and zebrafish molecular initiating events (MIEs) in endocrine and metabolic disruption, altered lipid metabolism, and oxidative stress. Bioassays showed that 29 out of 40 assays had at least one site with activity over the limit of detection. The receptors that exhibited the highest number of samples above the effect-based trigger (EBT) values that would be expected to cause toxicity were Aryl hydrocarbon receptor (AhR, human and zebrafish), Pregnane X Receptor (PXR), Estrogen Receptor-beta (ERB), and Androgen Receptor (AR). Characterizing the collection sites by their bioactivity aligned closely with the stream in which samples were collected, with the three sites in Warriors Mark Run, three in Halfmoon, and three in Spruce Run more similar than sites from the other streams. The sum of all EARs for each chemical indicated that the pharmaceutical Carbamazepine and the pesticides Carbaryl and Atrazine posed the greatest concern. However, predicted activity and site prioritization based on individual chemical analysis and calculated EAR were different than those measured by bioassay, indicating that biologically active chemicals are present in the samples that were not included in the targeted analytes. Taken together, these data show that chemical analysis and EAR analysis are beneficial for prioritization of chemicals, whereas mechanism-based bioassays are more inclusive of known as well as unknown chemical contaminants and thus of more use fo

关键词： Water quality

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Extraction of isotropic electron-nuclear gyperfine coupling constants of paramagnetic point defects from near-zero field magnetoresistance spectra via least squares fitting to models developed from the stochastic quantum liouville equation

arXiv

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arXiv 2020年

作者： Frantz, Elias B. Harmon, Nicholas J. McMillan, Stephen R. Moxim, Stephen J. Flatté, Michael E. Lenahan, Patrick M. Intercollege Graduate Degree Program in Materials Science and Engineering Pennsylvania State University University ParkPA16802 United States Department of Physics University of Evansville EvansvilleIN47722 United States Department of Physics and Astronomy University of Iowa Iowa CityIA52242 United States Department of Engineering Science and Mechanics Pennsylvania State University University ParkPA16802 United States

We report on a method by which we can systematically extract spectroscopic information such as isotropic electron-nuclear hyperfine coupling constants from near-zero field magnetoresistance (NZFMR) spectra. The method utilizes a least squares fitting of models developed from the stochastic quantum Liouville equation. We applied our fitting algorithm to two distinct material systems: Si/SiO2 metal oxide field effect transistors (MOSFETs), and a-Si:H metal insulator semiconductor (MIS) capacitors. Our fitted results and hyperfine parameters are in reasonable agreement with existing knowledge of the defects present in the systems. Our work indicates that the NZFMR response and fitting of the NZFMR spectrum via models developed from the stochastic quantum Liouville equation could be a relatively simple yet powerful addition to the family of spin-based techniques used to explore the chemical and structural nature of point defects in semiconductor devices and insulators. Copyright © 2020, The Authors. All rights reserved.

关键词： Point defects

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Correction: Advancements in additive manufacturing for video laryngoscopes: a comprehensive scoping and technological review

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Systematic reviews 2024年第1期13卷 31页

作者： Ana Cristina Beitia Kraemer Moraes Chiara das Dores do Nascimento Everton Granemann Souza Mauricio Beitia Kraemer Mauricio Moraes Neftali Lenin Villarreal Carreno Evandro Piva Rafael Guerra Lund Pelotas Dental School Graduate Program in Dentistry Federal University of Pelotas Pelotas RS 96010‑560 Brazil. Master's Degree in Electronic and Computer Engineering Center for Social and Technological Sciences Catholic University of Pelotas Pelotas RS 96015‑560 Brazil. Faculty of Medicine São Francisco University Bragança Paulista SP 12916‑900 Brazil. Faculty of Medicine Federal University of Pelotas Pelotas RS 96010‑560 Brazil. Graduate Program in Materials Science and Engineering Technological Development Center Federal University of Pelotas Pelotas RS 96010‑610 Brazil. Pelotas Dental School Graduate Program in Dentistry Federal University of Pelotas Pelotas RS 96010‑560 Brazil. rafael.lund@***. Graduate Program in Materials Science and Engineering Technological Development Center Federal University of Pelotas Pelotas RS 96010‑610 Brazil. rafael.lund@***.

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Optimization of DNA microsensor arrays for biological detection

Optimization of DNA microsensor arrays for biological detect...

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ASME 2000 International Mechanical engineering Congress and Exposition, IMECE 2000

作者： Gau, Jen-Jr Lan, Esther H. Dunn, Bruce Ho, Chih-Ming Biomedical Engineering Interdepartmental Graduate Degree Program University of California Los Angeles United States Department of Materials Science and Engineering University of California Los Angeles United States Department of Mechanical and Aerospace Engineering University of California Los Angeles United States

ISBN: (纸本)9780791819005

This paper describes the characterization and optimization of a reusable DNA microsensor array for rapid biological agent detection developed in previous publications. (Fig.l) [1-3] This MEMS based DNA sensor utilizes a standard three-electrode electrochemical cell configuration with novel micro fabricated structure design to minimize non-specific binding. The sensor module is easily to be adapted to various protocols and can be used for rapid detection of macromolecules (DNA, RNA) from targets such as uropathogenic Escherichia coli (E. coli) in urine and microorganisms causing otitis media (middle ear infection). Less than 105 E. coli cells can be detected from the urine sample of a patient with urine tract infection. The sensitivity is enhanced by appropriate sensor characterization and surface modification. The total detection time including sample preparation can be reduced to 25 minutes by using a POD conjugated oligonucleotide. Copyright © 2000 by ASME

关键词： DNA

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