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Design, analysis, and implementation of analog complex filter for low-IF wireless LAN application

Design, analysis, and implementation of analog complex filte...

Proceedings - 17th International Conference on VLSI Design, Concurrently with the 3rd International Conference on Embedded systems Design

作者： Teo, T. Hui Khoo, Ee-Sze Uday, Dasgupta Tear, Chin-Boon Institute of Microelectronics Intgd. Circuit and System Laboratory Singapore Science Park II Singapore 117685

The design and implementation of an analog complex filter for low-IF WLAN 802.11a receiver is described. An IF of 20MHz is chosen as a trade off between image-rejection and power consumption. The specified bandwidth is 20MHz. Baseband processing requires low group-delay variation in the received signal to meet bit error rate (BER) specification. This requires a design of high frequency, wide bandwidth and high attenuation filter. To resolve these issues, fifth-order complex transitional Bessel-Chebyshev filter is implemented to compromise between high attenuation and low group-delay variation. Measured results show the designed filter provides 30dB to 40dB image rejection and 18dB adjacent channel rejection, while keeping a low group-delay variation of below 6.0ns within the pass-band. High frequency and wide bandwidth filter also requires stringent design specification of the circuitries. Differential inverter transconductor is optimized for this continuous-time filter design. The complete filter including on-chip tuning circuit and bandgap consumes only 7.5mA with 1.8V single supply voltage. The circuit is fabricated using 0.18 μm, 6-metal-single-poly CMOS process.

关键词： Electric filters

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Characterization of symmetrical spiral inductor in 0.35 μm CMOS technology for RF application

Characterization of symmetrical spiral inductor in 0.35 μm ...

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作者： Teo, T. Hui Choi, Yeung-Bun Liao, Huailin Xiong, Yong-Zhong Fu, Jeffrey Shiang Intgd. Circuit and System Laboratory Institute of Microelectronics 11 Science Park Road Singapore 117685 Singapore Sch. of Elec./Electron. Engineering Nanyang Technological University Nanyang Avenue Singapore 639798 Singapore

Characteristics of symmetrical spiral inductor in differential mode is studied and optimized in this work. The characteristics of interest include inductor value, quality factor, peak frequency and self-resonance frequency. Both single-layer and double-layer inductor using top metals are characterized. Inductor excited in differential mode and single-ended mode are characterized for comparison. The optimized symmetrical spiral inductors are fabricated in standard digital 0.35 μm CMOS process. Experimental results show 60-100% improvement of quality factor and peak frequency, meanwhile 10-20% improvement of self-resonance frequency by exciting the symmetrical spiral inductors in differential mode compared with single-ended mode. To further validate the characterized inductor, the differential spiral inductors are adopted in optimizing low power and low phase noise fully integrated 2.4 GHz voltage-controlled oscillator (VCO). The designed VCO achieved phase noise of more than -105 dBc/Hz at 100 kHz offset with approximately 4.5 mA at 3.0 V supply. © 2004 Elsevier Ltd. All rights reserved.

关键词： CMOS integrated circuits

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Characterization and modeling of balun on silicon substrate

Characterization and modeling of balun on silicon substrate

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10th International Symposium on Integrated circuits, Devices and systems, ISIC-2004: Integrated systems on Silicon - Proceedings

作者： Xiong, Yong Zhong Teo, T. Hui Fu, J.S. Intgd. Circuit and System Laboratory Institute of Microelectronics Singapore Science Park-II 11 Science Park Road Singapore 117685 Sch. of Elec. and Electronics Eng. Nanyang Technological University Singapore Singapore

ISBN: (纸本)9810517874

A direct extraction method of equivalent circuit parameters for balun on silicon substrate is developed. Three ports balun is the targeted device for this extraction method. The extraction is based on two-port measurement instead of three-port by grounding the third port. The use of on-chip 50Ω load is also avoided. Hence, this method greatly simplified the measurement and extraction process. One set of balun fabricated on 0.18μm standard CMOS process with single-poly-6-metal is used as the test vehicle. The extraction results are in excellent agreement with the measured results up to 10GHz.

关键词： CMOS integrated circuits

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Automotive semiconductor technologies in the ITS era

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Hitachi Review 1999年第6期48卷 328-332页

作者： Nakatsuka, Yasuhiro Uno, Shigeo Watanabe, Terukazu Mori, Mutsuhiro Hitachi Ltd. First Department of System Research Hitachi Research Laboratory Segment Marketing Department Semiconduct./Intgd. Circuit Group Hitachi Ltd. Hitachi ULSI Systems Co. Ltd. Semiconduct. Applic. Eng. Department Hitachi Ltd. First Dept. of Pwr. Electron. Div. Hitachi Research Laboratory

A number of different types of semiconductors are now used for control and information applications in automobiles. There is increasing use of ITS (intelligent transport systems) and communication infrastructures such as the Internet, while collaborative operation of information and communication systems is resulting in a safe and pleasant driving environment. Hitachi, Ltd. is presenting comprehensive solutions in this field of automotive information and control systems, through the development of the SuperH RISC engine, which is an information processing CPU, the Q series graphics processors for display panels, the SH/H8S computer, which is an equipment control CPU, and power devices for mechanical control.

关键词： Intelligent vehicle highway systems

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