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SERS molecular-ruler based DNA aptamer single-molecule and its application to multi-level optical storage

Chemical Engineering Journal 2022年 433卷

作者： Ning Feng Lei Zhang Jingjing Shen Yanling Hu Weibing Wu Essy Kouadio Fodjo Shufen Chen Wei Huang Lianhui Wang Key Laboratory for Organic Electronics and Information Displays (KLOEID) & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials (IAM) National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts and Telecommunications 9 Wenyuan Road Nanjing 210023 China School of Electrical and Control Nanjing Polytechnic Institute 188 Xinle Road Nanjing 211500 China Jiangsu Provincial Key Lab of Pulp & Paper Science & Technology Nanjing Forestry University159 Longpan Road Nanjing 210037 China Laboratory of Constitution and Reaction of Matter University of Felix Houphouet-Boigny 22 BP 582 Abidjan 22 Cote d’Ivoire Frontiers Science Center for Flexible Electronics (FSCFE) Shaanxi Institute of Flexible Electronics (SIFE) Shaanxi Institute of Biomedical Materials and Engineering (SIBME) Northwestern Polytechnical University (NPU) 127 West Youyi Road Xi'an 710072 China

Real-time analysis of DNA aptamer conformational changes is essential to understanding the function of DNA aptamers at the single-molecular level. Herein, we design core-satellite nanostructures as surface-enhanced Raman scattering (SERS) molecular-rulers to monitor the change process of single Hg 2+ aptamer under dark-field microscopy (DFM-) correlated Raman spectroscopy. Applying the SERS molecular-ruler, the individual Hg 2+ aptamer conformational change events triggered by Hg 2+ that leads to the stepwise closing of the satellite to the core is continuously monitored by changes in SERS intensity. Moreover, individual Hg 2+ aptamer conformational change events are confirmed by in-situ scanning electron microscopy (SEM) and finite difference time-domain (FDTD) calculation. Furthermore, the SERS molecular-ruler is a valid method for studying aptamer intermediate states, the binding sites in aptamer and the kinetics of Hg 2+ aptamer configuration change at the single-molecule level. Such findings are promising for exploring the mechanism of DNA aptamer configuration change and providing the fundamental understanding for designing various DNA aptamer based biological applications. For future applications, SERS molecular-ruler has the potential to realize multi-level optical storage and presents a new practical and effective method for designing multi-level storage system.

关键词： SERS Surface-enhanced Raman scattering DFM Dark-field microscopy SEM Scanning electron microscopy FDTD Finite difference time-domain TERS Tip-enhanced Raman spectroscopy AuNP Gold nanoparticle R Relaxed T Taut PAGE Polyacrylamide gel electrophoresis LSPR Localized surface plasmon resonance ITO Indium tin oxide TEM Transmission electron microscopy 4-MBA 4-mercaptobenzoic acid EF Enhancement factor MPTES 3-mercaptopropyltriethoxysilane Tetrahedral DNA structure SERS molecular-ruler Hg 2+ aptamer conformational change Stepwise rises of Raman intensity Multi-level optical storage

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Magnetic-field-induced nontrivial electronic state in the Kondo-lattice semimetal CeSb

arXiv

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arXiv 2020年

作者： Fang, Y. Tang, F. Ruan, Y.R. Zhang, J.M. Zhang, H. Gu, H. Zhao, W.Y. Han, Z.D. Tian, W. Qian, B. Jiang, X.F. Zhang, X.M. Ke, X. Jiangsu Laboratory of Advanced Functional Materials Department of Physics Changshu Institute of Technology Changshu215500 China Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials College of Physics and Energy Fujian Normal University Fuzhou350117 China Department of Physics and Astronomy Michigan State University East LansingMI48824 United States ISEM Innovation Campus University of Wollongong WollongongNSW2500 Australia Neutron Scattering Division Oak Ridge National Laboratory Oak RidgeTN37831 United States School of Materials Science and Engineering Hebei University of Technology Tianjin300130 China

Synergic effect of electronic correlation and spin-orbit coupling is an emerging topic in topological materials. Central to this rapidly developing area are the prototypes of strongly correlated heavy-fermion systems. Recently, some Ce-based compounds are proposed to host intriguing topological nature, among which the electronic properties of CeSb are still under debate. In this paper, we report a comprehensive study combining magnetic and electronic transport measurements, and electronic band structure calculations of this compound to identify its topological nature. Quantum oscillations are clearly observed in both magnetization and magnetoresistance at high fields, from which one pocket with a nontrivial Berry phase is recognized. Angular-dependent magnetoresistance shows that this pocket is elongated in nature and corresponds to the electron pocket as observed in LaBi. Nontrivial electronic structure of CeSb is further confirmed by first-principle calculations, which arises from spin splitting in the fully polarized ferromagnetic state. These features indicate that magnetic-field can induce nontrivial topological electronic states in this prototypical Kondo semimetal. Copyright © 2020, The Authors. All rights reserved.

关键词： Electronic structure

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Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

arXiv

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arXiv 2021年

作者： An, Yipeng Wang, Kun Gong, Shijing Hou, Yusheng Ma, Chunlan Zhu, Mingfu Zhao, Chuanxi Wang, Tianxing Ma, Shuhong Wang, Heyan Wu, Ruqian Liu, Wuming School of Physics Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials Henan Normal University Xinxiang453007 China Department of Physics and Astronomy Mississippi State University Mississippi StateMS39762 United States Department of Chemistry Mississippi State University Mississippi StateMS39762 United States Department of Optoelectronics East China Normal University Shanghai200062 China Department of Physics and Astronomy University of California IrvineCA92697 United States School of Physics Sun Yat-Sen University Guangzhou510275 China School of Physics and Technology Suzhou University of Science and Technology Suzhou Jiangsu215009 China Hebi National Lighting Co. Ltd. Hebi458000 China Siyuan Laboratory Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials Department of Physics Jinan University Guangzhou510632 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing100190 China

Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices. © 2021, CC BY.

关键词： Van der Waals forces

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Organic non-volatile memory based on pentacene/tris(8-hydroxy quinoline) aluminum heterojunction transistor

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Organic Electronics 2018年 57卷 335-340页

作者： Zhang, Peng Chen, Xudong Li, Wen Ling, Haifeng Wang, Wenjun Zhang, Guangwei Yi, Mingdong Xie, Linghai Shi, Wei Shi, Naien Huang, Wei School of Electronic and Optical Engineering Nanjing University of Posts & Telecommunications 9 Wenyuan Road Nanjing 210023 China Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing University of Posts & Telecommunications 9 Wenyuan Road Nanjing 210023 China Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials(SICAM) Nanjing Tech University(Nanjing Tech) 30 South Puzhu Road Nanjing 211816 China Shandong Provincial Key Laboratory of Optical Communication Science and Technology School of Physical Science and Information Technology Liaocheng University 252059 Shandong China

Non-volatile heterojunction transistor memory was fabricated by successively depositing pentacene/tris(8-hydroxy quinoline) aluminum(Alq3) layers. In this specified configuration, pentacene functioned as the active la... 详细信息

Non-volatile heterojunction transistor memory was fabricated by successively depositing pentacene/tris(8-hydroxy quinoline) aluminum(Alq₃) layers. In this specified configuration, pentacene functioned as the active layer between the source and drain of field-effect transistor memory, and Alq₃ was adopted as the charge-trapping layer. Operation of non-volatile memory was implemented by an electrical writing and light illumination erasing procedure. Band bending between pentacene and Alq₃ due to the formation of a type II heterojunction prohibited back-injection of trapped charges, which demonstrated hysteresis for the transfer characteristics. The specified heterojunction structure (without a tunneling layer) enabled carriers to facilely transport between the active layer and charge trapping layer. Therefore, a large memory window (40.3 V, for a programming voltage of −80 V) and fast writing speed of less than 1 μs were demonstrated;in addition, the 1-bit non-volatile memory device showed a moderate retention time of more than 2 years. The large memory window, fast writing speed, and long retention time can potentially enable practical applications of non-volatile memory. © 2018

关键词： Heterojunction Non-volatile memory Organic field-effect transistors

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Conformal hexagonal boron nitride encapsulation of graphene-skinned glass fiber fabric for enhanced electrical stability

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Nature communications 2025年第1期16卷 4965页

作者： Xiaomin Yang Yuyao Yang Shuting Cheng Hao Yuan Xuzhao Gai Wenjuan Li Fushun Liang Fan Yang Kangyi Zheng Longfei Liu Wenjing Jiang Qingxu Su Xinyu Mao Jingnan Wang Yuejie Zhao Enshan Liu Zhongfan Liu Yue Qi Beijing Graphene Institute (BGI) Beijing 100095 China. Centre for Nanochemistry Beijing Science and Engineering Centre for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 China. School of Population and Health Renmin University of China Beijing 100872 China. College of Energy Soochow Institute for Energy and Materials Innovations (SIEMIS) Jiangsu Provincial Key Laboratory for Advanced Carbon Materials and Wearable Energy Technologies Soochow University Suzhou 215006 China. Academy for Advanced Interdisciplinary Research North University of China Taiyuan 030051 China. Department of Chemistry School of Light Industry Science and Engineering Beijing Technology and Business University Beijing 100048 China. Beijing Graphene Institute (BGI) Beijing 100095 China. zfliu@***. Centre for Nanochemistry Beijing Science and Engineering Centre for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 China. zfliu@***. Beijing Graphene Institute (BGI) Beijing 100095 China. qiyue@***.

Encapsulation is crucial for protecting graphene devices, but traditional whole-package encapsulations usually add bulky structures and reduce their flexibility. Hexagonal boron nitride (h-BN) holds potential for graphene encapsulation, but faces challenges in large-area acquisition and conformal coverage due to limitations in exfoliation and transfer techniques. Graphene-skinned glass fiber fabric (GGFF), made via graphene CVD growth on each fiber of a glass fiber fabric, consists of a hierarchical conductive network, but pressure/deformation-induced inter-fiber contact resistance fluctuations destabilize its electrical conduction. Whole-package encapsulation cannot resolve this, as fails to insulate inter-fiber contacts. Herein, thick, high-quality h-BN films are CVD-grown on each fiber in GGFF, achieving conformal encapsulation. This unlocks conductive network in GGFF, stabilizing electrical conduction while preserving structure stability and flexibility. This also improves GGFF's resistance to doping and oxidation, extending its service life. This encapsulation strategy is broadly applicable to other two-dimensional materials and complex device structures, promoting reliable nanoelectronics in demanding environments.

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Superconducting states and Majorana modes in transition-metal dichalcogenides under inhomogeneous strain

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Physical Review B 2019年第8期99卷 085106-085106页

作者： Ming-Xun Deng G. Y. Qi W. Luo R. Ma Rui-Qiang Wang R. Shen L. Sheng D. Y. Xing Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum materials School of Physics and Telecommunication Engineering South China Normal University Guangzhou 510006 China National Laboratory of Solid State Microstructures and Department of Physics Nanjing University Nanjing 210093 China School of Science Jiangxi University of Science and Technology Ganzhou 341000 China Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean Nanjing University of Information Science and Technology Nanjing 210044 China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China

We study the effect of inhomogeneous strain on transition-metal dichalcogenides with a large intrinsic gap in their spectrum. It is found that, by tuning the chemical potential, superconductivity can preserve within the strain-induced discrete pseudo Landau levels (LLs), which introduce interesting topological properties to these systems. As we show, the superconductivity for integer fillings is quantum critical, and the quantum critical coupling strength is determined by the spacing between the two LLs closest to the Fermi level. For partial fillings, the superconducting gap is scaled linearly with the coupling strength and decreases rapidly when the chemical potential shifts away from the middle of each LL. In the presence of a Zeeman field, a pair of Majorana modes emerges simultaneously in the two valleys of strained dichalcogenides. When valley symmetry is further destroyed, a single Majorana mode can be expected to emerge at the edges of the strained monolayer dichalcogenides.

关键词： Landau levels Superconductivity Strongly correlated systems Transition metal dichalcogenides

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Mapping the elastic properties of two-dimensional MoS_(2) via bimodal atomic force microscopy and finite element simulation

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npj Computational Materials 2018年第1期4卷 246-253页

作者： Yuhao Li Chuanbin Yu Yingye Gan Peng Jiang Junxi Yu Yun Ou Dai-Feng Zou Cheng Huang Jiahong Wang Tingting Jia Qian Luo Xue-Feng Yu Huijuan Zhao Cun-Fa Gao Jiangyu Li State Key Laboratory of Mechanics and Control of Mechanical Structures Nanjing University of Aeronautics&AstronauticsNanjing 210016 JiangsuChina Shenzhen Key Laboratory of Nanobiomechanics Shenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen518055 GuangdongChina Department of Mechanical Engineering Clemson UniversityClemsonSC 29634-0921USA Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education School of Materials Science and EngineeringXiangtan UniversityXiangtan 411105 HunanChina Hunan Provincial Key Laboratory of Health Maintenance for Mechanical Equipment Hunan University of Science and TechnologyXiangtan 411201 HunanChina School of Physics and Electronic Science Hunan University of Science and TechnologyXiangtan 411201 HunanChina Institute of Biomedicine and Biotechnology Shenzhen Institutes of Advanced TechnologyChinese Academy of SciencesShenzhen 518055 GuangdongChina Shenzhen Institutes of Advanced Technology Chinese Academy of SciencesShenzhen 518055 GuangdongChina Department of Mechanical Engineering University of WashingtonSeattleWA 98195USA

Elasticity is a fundamental mechanical property of two-dimensional(2D)materials,and is critical for their application as well as for strain ***,accurate measurement of the elastic modulus of 2D materials remains a challenge,and the conventional suspension method suffers from a number of *** this work,we demonstrate a method to map the in-plane Young’s modulus of mono-and bi-layer MoS_(2) on a substrate with high spatial *** atomic force microscopy is used to accurately map the effective spring constant between the microscope tip and sample,and a finite element method is developed to quantitatively account for the effect of substrate stiffness on *** these methods,the in-plane Young’s modulus of monolayer MoS_(2) can be decoupled from the substrate and determined as 265±13 GPa,broadly consistent with previous reports though with substantially smaller *** is also found that the elasticity of mono-and bi-layer MoS_(2) cannot be differentiated,which is confirmed by the first principles *** method provides a convenient,robust and accurate means to map the in-plane Young’s modulus of 2D materials on a substrate.

关键词： modulus modal element

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Positive longitudinal spin magnetoconductivity in Z2 topological Dirac semimetals

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Physical Review B 2019年第23期100卷 235105-235105页

作者： Ming-Xun Deng Yan-Yan Yang Wei Luo R. Ma Chang-Yong Zhu Rui-Qiang Wang L. Sheng D. Y. Xing Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials GPETR Center for Quantum Precision Measurement SPTE South China Normal University Guangzhou 510006 China School of Science Jiangxi University of Science and Technology Ganzhou 341000 China Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean Nanjing University of Information Science and Technology Nanjing 210044 China National Laboratory of Solid State Microstructures and Department of Physics Nanjing University Nanjing 210093 China Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing 210093 China

Recently, a class of Dirac semimetals, such as Na3Bi and Cd2As3, is discovered to carry Z2 monopole charges. We present an experimental mechanism to realize the Z2 anomaly in regard to the Z2 topological charges and propose to probe it by magnetotransport measurements. In analogy to the chiral anomaly in Weyl semimetals, the acceleration of electrons by a spin bias along the magnetic field can create a Z2 charge imbalance between the Dirac points, the relaxation of which contributes measurable positive longitudinal spin magnetoconductivity (LSMC) to the system. The Z2 anomaly induced LSMC is a spin version of the longitudinal magnetoconductivity (LMC) due to the chiral anomaly, which possesses all characters of the chiral anomaly induced LMC. While the chiral anomaly in the topological Dirac semimetal is very sensitive to local magnetic impurities, the Z2 anomaly is found to be immune to local magnetic disorder. It is further demonstrated that the quadratic or linear field dependence of the positive LMC is not unique to the chiral anomaly. Base on this, we argue that the periodic-in-1/B quantum oscillations superposed on the positive LSMC can serve as a fingerprint of the Z2 anomaly in topological Dirac semimetals.

关键词： Magnetotransport Dirac semimetal Topological materials Boltzmann theory

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A robust and accurate SLAM algorithm for omni-directional mobile robots based on a novel 2.5D lidar device 13

A robust and accurate SLAM algorithm for omni-directional mo...

引用

13th IEEE Conference on Industrial Electronics and Applications, ICIEA 2018

作者： Yang, Yu Yang, Guilin Tian, Yingzhong Zheng, Tianjiang Li, Long Wang, Zhenhua Ningbo Institute of Materials Technology and Engineering CAS Ningbo315201 China Zhejiang Key Laboratory of Robotics and Intelligent Manufacturing Equipment Technology China School of Mechatronic Engineering and Automation Shanghai University Shanghai China Jiangsu Provincial Key Laboratory of Advanced Robotics Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University Suzhou215123 China

ISBN: (纸本)9781538637579

Lidars are commonly employed in mobile robot SLAM applications due to their high stability and high measuring accuracy. For a conventional 2D Lidar, only the planar points can be detected in once scan, which limits the robustness of SLAM algorithms. Omni-directional mobile robots with powered caster wheels have 3-DOF planar motion capabilities so that they are widely deployed in narrowly constrained environment. This paper presents a novel design of a 2.5D Lidar device, in which a 2D Lidar is mounted onto a 1-DOF liner stage that moves along the vertical direction. As a result, the 2.5D Lidar device can also perform vertical scanning within the motion range of the liner stage. Consequently, a robust SLAM algorithm based on the 2.5D Lidar device is proposed for the omni-directional mobile robot, where a frame-to-frame scan matching using ICP algorithm is employed to improve the robustness and accuracy of the scan matching. As the 2.5D points cloud is actually located in a belt-shaped space, the map can be finally constructed in a 2D mode to reduce the computational complexity. In addition, when an incorrect matching occurs, the odometry information of the mobile robot will be employed to further improve the robustness and accuracy of the scan matching algorithm. The effectiveness of the proposed approach is validated through computer simulations. © 2018 IEEE.

关键词： Optical radar

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Multifunctional lateral transition-metal disulfides heterojunctions

arXiv

引用

arXiv 2020年

作者： An, Yipeng Hou, Yusheng Wang, Kun Gong, Shijing Ma, Chunlan Zhao, Chuanxi Wang, Tianxing Jiao, Zhaoyong Wang, Heyan Wu, Ruqian School of Physics Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials Henan Normal University Xinxiang453007 China Department of Physics and Astronomy University of California IrvineCA92697 United States Department of Mechanical Engineering University of Michigan Ann ArborMI48109 United States Department of Optoelectronics East China Normal University Shanghai200062 China School of Mathematics and Physics Suzhou University of Science and Technology Suzhou Jiangsu215009 China Siyuan Laboratory Guangdong Provincial Engineering Technology Research Center of Vacuum Coating Technologies and New Energy Materials Department of Physics Jinan University Guangzhou510632 China

The intrinsic spin-dependent transport properties of two types of lateral VS2|MoS2 heterojunctions are systematically investigated using first-principles calculations, and their various nanodevices with novel properties are designed. The lateral VS2|MoS2 heterojunction diodes show a perfect rectifying effect and are promising for the applications of Schottky diodes. A large spin-polarization ratio is observed for the A-type device and pure spin-mediated current is then realized. The gate voltage significantly tunes the current and rectification ratio of their field-effect transistors (FETs). In addition, they all have sensitive photoresponse to blue light, and could be used as photodetector and photovoltaic device. Moreover, they generate the effective thermally-driven current when a temperature gratitude appears between the two terminals, suggesting them as potential thermoelectric materials. Hence, the lateral VS2|MoS2 heterojunctions show a multifunctional nature and have various potential applications in spintronics, optoelectronics, and spin caloritronics. Copyright © 2020, The Authors. All rights reserved.

关键词： Heterojunctions

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