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Analysis of Metallization Effects of Pressure-Assisted Cu Nanoparticle Sintering on DBC by Experiment and Nanoscale Simulation

Analysis of Metallization Effects of Pressure-Assisted Cu Na...

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International Conference on (ICEPT) Electronic packaging technology

作者： Shizhen Li Jing Jiang Xu Liu Shaogang Wang Zhonghua Zhang Huaiyu Ye Joint Lab for Advanced Semiconductor Packaging Technologies Joint Lab for Advanced Packaging and Testing Technology of Integrated Circuits School of Microelectronics Southern University of Science and Technology Shenzhen China Academy for Engineering&Technology Fudan University Shanghai China Electrical Engineering Mathematics and Computer Science Delft University of Technology Delft The Netherlands School of Medical Informatics Daqing Campus Harbin Medical University Daqing China

Substrate metallization is a crucial factor affecting the mechanical properties of sintered nanoparticles in microelectronics applications, as it is essential for ensuring good adhesion between the substrate and the sintered material. In this study, we investigated the influence of metallization on pressure-assisted nanocopper sintering and analyzed the related mechanism of interaction using experiments and molecular dynamics simulation. In the first session, we bonded dummy dies on various substrates, including bare Cu, and substrates with Ag or Au metallization by nanocopper pressure-assisted sintering. The mechanical properties of the bonding layers were estimated using shear strength and SEM image analysis of fracture and cross-section morphologies under different sintering conditions. We found that the group of Cu-bare Cu have better bonding strength as the sintering temperature or assisted pressure is not high enough. However, as more energy input to the bonding layer, such as higher temperature or larger sintering pressure, the mechanical performance showed a significant increase. In the second session, a sintering model, which contained a single nanoparticle and substrate, was built to illustrate the effects of metallization from the perspective of solid-state wetting. The contact angle was estimated using a creative method, and the crystallization structure evolutions under different sintering conditions were analyzed. We found that the lattice boundary generated as the Cu nanoparticle coalescence with Ag or Au substrate, which may decrease the bonding strength. However, for Ag and Au metallization, limited interface diffusion can be observed at the neck region, where a few numbers of substrate atoms transmitted toward Cu nanoparticle, and the contact area was larger than that of bare Cu substrate. Finally, a simple uniaxial stretching simulation was conducted to prove the results of sintering simulation. This study provides valuable insights into the effec

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Strain Engineering for Modulating Electronic and Optoelectronic Properties of Monolayer InSe

Strain Engineering for Modulating Electronic and Optoelectro...

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International Conference on (ICEPT) Electronic packaging technology

作者： Siyuan Xu Tuobei Sun Junfeng Li Tao Lin Huiru Yang Huaiyu Ye School of Microelectronics Southern University of Science and Technology Shenzhen China Joint Lab for Advanced Semiconductor Packaging Technologies Joint Lab for Advanced Packaging and Testing Technology of Integrated Circuits School of Microelectronics Southern University of Science and Technology Shenzhen China Nanjing Moli Semiconductor Co.Ltd Nanjing China ShenZhen PhasedCom Communication Technology Co. Ltd. Shenzhen China Harbin Institute of Technology Harbin China

This work provides valuable insights into the potential of strain engineering for tailoring the electronic and optoelectronic properties of monolayer InSe. The bandgap of monolayer InSe can be modified through strain engineering, where tensile strain leads to a decreased bandgap value and a potential transition from a semiconductor to a conductor, while compressive strain initially increases the bandgap to a maximum value before decreasing back to its original value. The findings suggest that mechanical deformation can effectively modify InSe’s electronic structure, providing a promising avenue for developing high-performance optoelectronic devices with tunable properties. Furthermore, this work proved strain engineering can effectively modify the optoelectronic properties of monolayer InSe, such as absorption coefficient, reflectivity, conductivity, and loss function. Specifically, compressive strain can significantly increase the peak value of these properties, while tensile strain can increase their average value in the visible light and infrared range. These results demonstrate the importance of considering strain effects when designing next-generation 2D-based devices and highlight InSe as a promising candidate for the optoelectronic devices.

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Improving Optical and Electronic Performance of Monolayer Silicon Carbide via Metal Doping

Improving Optical and Electronic Performance of Monolayer Si...

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International Conference on (ICEPT) Electronic packaging technology

作者： Junfeng Li Yanlong Tang Siyuan Xu Tao Lin Tuobei Sun Huaiyu Ye School of Microelectronics Southern University of Science and Technology Shenzhen China Research Institute of Fudan University in Ningbo Ningbo China ShenZhen PhasedCom Communication Technology Co. Ltd. Shenzhen China Joint Lab for Advanced Semiconductor Packaging Technologies Joint Lab for Advanced Packaging and Testing Technology of Integrated Circuits School of Microelectronics Southern University of Science and Technology Shenzhen China Nanjing Moli Semiconductor Co. Ltd Nanjing China

Two-dimensional SiC materials possess exceptional chemical reactivity and thermal stability, similar to graphene and silicone. Using first-principles computations, this work examines the electrical and optical characteristics of monolayer SiC and doped monolayer SiC with Ag, Co, Fe, and Pt. In monolayer SiC, the Si and C sites have distinctive electronic and optical characteristics, and their interactions with metal dopants result in a variety of electronic structural modifications. The performance of SiC-based electronic devices in semiconductor, optoelectronic, and photovoltaic applications must be optimized in light of these discoveries. SiC monolayer band gap and work function are impacted by doping, with Agdoped SiC showing the greatest reduction in band gap and work function. Doping, especially Ag doping at the C site, which exhibits the greatest absorption coefficient in the visible light spectrum, changes the absorption and reflectance characteristics of monolayer SiC. The loss function is also changed by doping, adding further information about its optical characteristics. This study emphasizes how electrical and optical properties may be modified by doping, providing opportunities for its use in a variety of optoelectronic devices.

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