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Perception-to-Cognition Tactile Sensing Based on Artificial-Intelligence-Motivated Human Full-Skin Bionic Electronic Skin

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ADVANCED MATERIALS 2022年第31期34卷 2202622-2202622页

作者： Niu, Hongsen Li, Hao Gao, Song Li, Yang Wei, Xiao Chen, Yuke Yue, Wenjing Zhou, Weijia Shen, Guozhen Univ Jinan Shandong Prov Key Lab Network Based Intelligent C Sch Informat Sci & Engn Jinan 250022 Peoples R China Univ Jinan Inst Adv Interdisciplinary Res Jinan 250022 Peoples R China Beijing Inst Technol Sch Integrated Circuits & Elect Beijing 100081 Peoples R China

Traditional electronic skin (e-skin), due to the lack of human-brain-like thinking and judging capability, is powerless to accelerate the pace to the intelligent era. Herein, artificial intelligence (AI)-motivated full-skin bionic (FSB) e-skin consisting of the structures of human vellus hair, epidermis-dermis-hypodermis, is proposed. Benefiting from the double interlocked layered microcone structure and supercapacitive iontronic effect, the FSB e-skin exhibits ultrahigh sensitivity of 8053.1 kPa(-1) (<1 kPa), linear sensitivity of 3103.5 kPa(-1) (1-34 kPa), and fast response/recovery time of <5.6 ms. In addition, it can realize the evolution from tactile perception to advanced intelligent tactile cognition after being equipped with a "brain". First, static/dynamic contactless tactile perception is achieved based on the triboelectric effect of the vellus hair bionics. Second, the supercapacitive iontronic effect based structural bionics of the epidermis-dermis-hypodermis and a five-layer multilayer perception (MLP) enable the general intelligent tactile cognition of gesture cognition and robot interaction. Most importantly, by making full use of the FSB e-skin with a six-layer MLP neural network, an advanced intelligent material cognition system is developed for real-time cognition of the object material species and locations via one contact, which surpasses the capability of humans.

关键词： artificial intelligence bionic structures electronic skin tactile cognition tactile perception

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Fringing-Effect-Based Capacitive Proximity Sensors

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ADVANCED FUNCTIONAL MATERIALS 2024年第51期34卷

作者： Niu, Hongsen Li, Hao Li, Ning Niu, Hongkai Li, Yang Gao, Song Shen, Guozhen Univ Jinan Sch Informat Sci & Engn Shandong Prov Key Lab Network Based Intelligent Co Jinan 250022 Peoples R China Binzhou Med Coll Yantai Affiliated Hosp Dept Hepatobiliary Surg Yantai 264000 Peoples R China Shandong Univ Sch Integrated Circuits Jinan 250101 Peoples R China Fudan Univ State Key Lab Integrated Chips & Syst Shanghai 200433 Peoples R China Beijing Inst Technol Sch Integrated Circuits & Elect Beijing 100081 Peoples R China

Proximity sensing technology, which can obtain information without physical contact, has become an ideal choice in scenarios where physical contact is not feasible. Despite substantial advancements in tactile sensing, proximity sensing technology still holds great potential and has yet to be fully developed. Among numerous proximity sensing technologies, the fringing-effect-based capacitive proximity sensor (FE-CPS) has garnered considerable attention due to its low cost, low power consumption, wide sensing range, and flexible and versatile structural design. However, research on FE-CPS has not yet formed a complete system, and its development and intellectualization are still in their infancy, urgently requiring a systematic review to advance its development. This paper systematically summarizes the recent advances in FE-CPS, from basic theory to practical applications. The working principle and typical structure of FE-CPS are first introduced, followed by a discussion of methods for optimizing device performance. Furthermore, the application scenarios of FE-CPS in intelligent pre-alarm systems, intelligent control systems, and intelligent material perception systems are reviewed. Finally, the future development and challenges faced by FE-CPS are prospected. Summarizing the importance of fringing-effect-based capacitive proximity sensors (FE-CPS) for overcoming current development bottlenecks and achieving higher levels of intelligence is crucial. This review provides a comprehensive overview of the typical structures and optimization strategies for constructing FE-CPS, and reviews the latest research advance in advanced application scenarios. image

关键词： capacitive proximity sensor coplanar electrode structure fringing effect intelligent system parallel plate structure

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Giant Magnetoimpedance Effect of Multilayered Thin Film Meanders Formed on Flexible Substrates

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MICROMACHINES 2023年第5期14卷 1002-1002页

作者： Liu, Mengyu Wang, Zhenbao Meng, Ziqin Sun, Xuecheng Huang, Yong Guo, Yongbin Yang, Zhen Guangxi Normal Univ Sch Elect & Informat Engn Sch Integrated Circuits Guilin 541004 Peoples R China Guangxi Normal Univ Educ Dept Guangxi Zhuang Autonomous Reg Key Lab Integrated Circuits & Microsyst Guilin 541004 Peoples R China Guangxi Normal Univ Sch Elect & Informat Engn Guangxi Key Lab Brain Inspired Comp & Intelligent Guilin 541004 Peoples R China Shanghai Univ Microelect Res & Dev Ctr Sch Mechatron Engn & Automation Shanghai 200444 Peoples R China Xidian Wuhu Res Inst Wuhu 241000 Peoples R China Qilu Univ Technol Inst Automation Shandong Acad Sci Key Lab UWB & THz Jinan 250014 Peoples R China

The giant magnetoimpedance effect of multilayered thin films under stress has great application prospects in magnetic sensing, but related studies are rarely reported. Therefore, the giant magnetoimpedance effects in multilayered thin film meanders under different stresses were thoroughly investigated. Firstly, multilayered FeNi/Cu/FeNi thin film meanders with the same thickness were manufactured on polyimide (PI) and polyester (PET) substrates by DC magnetron sputtering and MEMS technology. The characterization of meanders was analyzed by SEM, AFM, XRD, and VSM. The results show that multilayered thin film meanders on flexible substrates also have the advantages of good density, high crystallinity, and excellent soft magnetic properties. Then, we observed the giant magnetoimpedance effect under tensile and compressive stresses. The results show that the application of longitudinal compressive stress increases the transverse anisotropy and enhances the GMI effect of multilayered thin film meanders, while the application of longitudinal tensile stress yields the opposite result. The results provide novel solutions for the fabrication of more stable and flexible giant magnetoimpedance sensors, as well as for the development of stress sensors.

关键词： multilayered thin films meanders flexible substrates giant magnetoimpedance effect magnetic anisotropy

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Compact modeling of short-channel effects in back-gated 2D negative capacitance (NC) FETs

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JOURNAL OF PHYSICS D-APPLIED PHYSICS 2024年第42期57卷 425105-425105页

作者： Jiang, Chunsheng Lu, Qing Pan, Liyang Li, Quanfu Peng, Huiling Zhang, Zhigang Song, Shuxiang Xu, Jun Guangxi Normal Univ Guangxi Key Lab Brain Inspired Comp & Intelligent Guilin Peoples R China Guangxi Normal Univ Educ Dept Guangxi Zhuang Autonomous Reg Key Lab Integrated Circuits & Microsyst Guilin Peoples R China Tsinghua Univ Sch Integrated Circuit Beijing Peoples R China Tsinghua Univ Beijing Natl Res Ctr Informat Sci & Technol BNRis Beijing Peoples R China

The negative capacitance field-effect transistor with 2D channel material (2D NC-FET) holds significant promise for low-power applications owing to its remarkable resilience against short-channel effects (SCEs) and favorable noise characteristics. In this study, we establish a compact current-voltage (I-V) model for short-channel back-gated 2D NC-FETs with metal-ferroelectric-metal-insulator-semiconductor structure by self-consistently solving the two-dimensional Poisson, drift-diffusion and Landau-Khalatnikov equations. The proposed model is valid and continuous throughout the entire operating regime, including the fully-depleted region, partly-depleted region, and accumulation region. Furthermore, we derive analytical equations for the threshold voltage ( VTH ) and subthreshold swing ( SS ) of back-gated 2D NC-FETs based on the developed I-V model. Lastly, we elucidate the influence mechanisms of various device parameters and voltage bias on the subthreshold characteristics of short-channel back-gated 2D NC-FETs using the proposed I-V model in conjunction with analytical expressions of VTH and SS . Our findings reveal that back-gated 2D NC-FETs shows unconventional degradation behavior in VTH and SS, resulting from the competition between traditional SCEs and novel negative capacitance effects.

关键词： 2D NC-FET short-channel effects (SCEs) low-power applications compact model

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SiC IGBT degradation mechanism investigation under HV-H3TRB tests

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JOURNAL OF POWER ELECTRONICS 2024年第2期24卷 305-315页

作者： Wu, Ziming Dai, Zongbei Zhou, Jian Dong, Huafeng Wang, Wencan Xie, Feiwan Wang, Haoran Yan, Jiahui Chen, Xiyu Yang, Shaohua Wu, Fugen Guangdong Univ Technol State Key Lab Precis Elect Mfg Technol & Equipment Guangzhou Peoples R China Minist Ind & Informat Technol Sci & Technol Reliabil Phys & Applicat Elect Compo Elect Res Inst 5 Guangzhou Peoples R China Guangdong Univ Technol Sch Integrated Circuits Guangzhou Peoples R China Guangdong Univ Technol Sch Mat & Energy Guangzhou Peoples R China Guangdong Univ Technol Sch Phys & Optoelect Engn Guangzhou Peoples R China Guangdong Univ Technol Sch Int Educ Guangzhou Peoples R China Three Gorges Intelligent Ind Control Technol Co L Wuhan Peoples R China

The high voltage-high humidity-high temperature reverse bias (HV-H3TRB) test was utilized to evaluate the reliability of silicon carbide insulated gate bipolar transistors (SiC IGBTs). Moisture invasion often induces termination/passivation and metal corrosion. Therefore, the HV-H3TRB test is generally used to assess termination / passivation robustness. However, under the HV-H3TRB test conditions, gate quality degradation may occur. In this study, the dominant degradation mechanism of SiC IGBTs was investigated. The changes of the most sensitive static characteristics (e.g., threshold voltage, breakdown voltage, and leakage current) were recorded. The threshold voltage decreased and leakage current increased substantially after > 1000 h of HV-H3TRB tests under 85 celcius/85% RH climate conditions. Capacitance-voltage (C-V) curve measurements indicated that the mobile ions at the SiC/SiO2 interface or in the gate oxide likely caused the threshold-voltage instability in the SiC IGBTs after the HV-H3TRB tests. This instability can be recovered by applying a negative gate bias. Subsequent failure analysis confirmed no corrosion of metals or termination/passivation in the device, which indicates the robustness of the passivation (consisting of phosphor-silicate glass and Si3N4). Therefore, the gate quality appears to be a significant reliability risk for SiC IGBTs under high humidity, high temperature, and high voltage conditions.

关键词： SiC IGBT HV-H3TRB Threshold-voltage instability Mobile ions drift Degradation mechanism

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Rational design and optimization of self-powered instantaneous dual-parameter triboelectric sensor

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SENSORS AND ACTUATORS A-PHYSICAL 2024年 366卷

作者： Wu, Yun Zhang, Chenhao Chen, Jinkai Zhou, Hao Zhang, Chi Chen, Jin Chang, Shiyuan Xia, Lianbin Jiang, Jingyang Dong, Kang Xuan, Weipeng Zhao, Pengfei Dong, Shurong Luo, Jikui Hangzhou Dianzi Univ Minist Educ Key Lab RF Circuits & Syst Hangzhou 310018 Peoples R China Zhejiang Univ Coll Informat Sci & Elect Engn Key Lab Adv Micro Nano Elect Devices & Smart Syst Hangzhou 310027 Peoples R China Shanghai Univ Sch Mechatron Engn & Automat Shanghai Key Lab Intelligent Mfg & Robot Shanghai 200444 Peoples R China Zhejiang Univ ZJU Hangzhou Global Sci & Technol Innovat Ctr Hangzhou 311200 Peoples R China

Wireless sensing networks are essential for Internet of Things, smart city etc., however its development has been obstructed by the lack of suitable energy sources. Triboelectric nanogenerators (TENG) based self-powered instantaneous wireless sensing systems are particularly attractive for real-time applications owing to its high energy output and conversion efficiencies. However, such sensing systems are not fully optimized and have low sensitivity and instability. In this work, through analytic derivation of frequency and attenuation coefficient, rational system design and optimization are carried out for the first time. By optimizing coil inductive sensor and stabilizing capacitor, the stability of the dual-parameter sensor is greatly improved, achieving similar to 0.02% and similar to 1% fluctuation for frequency and attenuation coefficient, respectively. Owing to the high stability, a high sensitivity self-powered instantaneous film thickness sensor is obtained, which is capable of self-powered micrometer film thickness measurement (< 9 mu m). Besides, during dual-parameter sensing, the maximum error of decoupled distance and resistance can be improved from 7.6% to 4.83%, and 46.23% to 9.64% after optimization, respectively. A self-powered weight and distance instantaneous sensing system is also demonstrated which could be used in conveyer and robotic arm for production line management in the future, showing its feasibility and potential for future real-time monitoring applications.

关键词： Triboelectric nanogenerator Self-powered Dual-parameter sensing Instantaneous sensing

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Computer aided design automation for triboelectric nanogenerators

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NANO ENERGY 2023年第PartA期118卷

作者： Zhou, Hao Liu, Fuhai Chen, Jinkai Wang, Junchao Wu, Yun Chen, Jin Chang, Shiyuan Xia, Lianbin Zhang, Chi Jiang, Jingyang Dong, Kang Zhang, Chenhao Sun, Lingling Xuan, Weipeng Zhao, Pengfei Jin, Hao Dong, Shurong Luo, Jikui Hangzhou Dianzi Univ Minist Educ Key Lab RF Circuits & Syst Hangzhou 310018 Peoples R China Zhejiang Univ Coll Informat Sci & Elect Engn Key Lab Adv Micronano Elect Devices & Smart Syst Z Hangzhou 310027 Peoples R China Shanghai Univ Sch Mechatron Engn & Automat Shanghai Key Lab Intelligent Mfg & Robot Shanghai 200444 Peoples R China Zhejiang Univ ZJU Hangzhou Global Sci & Technol Innovat Ctr Hangzhou 311200 Peoples R China

For application of triboelectric nanogenerators (TENG), it is essential to design TENG with high energy con-version efficiency, and it is one of the crucial parts to obtain TENG designs with optimal output impedance to match with that of application systems. Current design processes are incapable of optimizing TENGs with complex structures effectively, which greatly prolongs the research and development process and hinders application of TENGs. Here, a universal computer aided design automation is proposed to generate the structural and material design of TENG for optimal power output under designated matching resistance. A semi-analytical method and a non-dominated sorting genetic algorithm (NSGA-II) are used for the design automation. For demonstration, design automation for freestanding rotational TENG (FR-TENG) is carried out. An acceleration factor of up to-900 is obtained with systematical simulation acceleration. A group of designs with optimal powers and matching resistances are obtained, from which different input impedances of power management units can be obtained for applications. For verification, a FR-TENG with an optimal average output power over 88 mW is designed and fabricated, the output impedance is intentionally chosen from pareto-optimal front to match the input impedance of the subsequent power management unit. This is used to develop a fully self-powered wireless humidity/temperature/ultraviolet environmental monitoring system. This system can transmit the sensing information every -7 s and display on a remote terminal, validating the effectiveness of the proposed design automation method.

关键词： Triboelectric nanogenerator Computer aided design Design automation Self-powered wireless sensing

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A direct written strain-insensitive temperature sensor based on a multi-polygonal structure for human temperature monitoring

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NANO ENERGY 2024年第PartA期131卷

作者： Wang, Peng Li, Yurui Cao, Jinjing Sun, Guifen Shao, Haiyan Fu, Xiuli Meng, Ying Meng, Chuizhou Li, Yang Univ Jinan Sch Mech Engn Jinan 250022 Peoples R China Hebei Univ Technol Minist Educ Intelligent Rehabil Device & Detect Te Hebei Key Lab Smart Sensing & Human Robot Interact Engn Res CtrState Key Lab Reliabil & Intelligence Tianjin 300401 Peoples R China Shandong Agr & Engn Univ Sch Informat Sci & Engn Jinan 250100 Peoples R China Univ Jinan Sch Informat Sci & Engn Shandong Prov Key Lab Network Based Intelligent Co Jinan 250022 Peoples R China Shandong Univ Sch Integrated Circuits Jinan 250101 Peoples R China Fudan Univ State Key Lab Integrated Chips & Syst Shanghai 200433 Peoples R China

Flexible temperature sensors show great potential in human health monitoring. However, sensitive materials and substrates of the reported temperature sensors have weak stretchability, mechanical compliance and breathability, which weakened the sensing stability and wearing comfort. Herein, a stretchable printed straininsensitive temperature sensor based on a multi-polygonal structure was developed. The highly printable temperature-sensitive ink preparation adopted a coagulation-assisted strategy by using polyvinyl alcohol (PVA) polymer as binder, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) and graphene (G) as temperature-sensitive materials. By designing the multi-polygonal structure, the temperature sensor shows excellent anti-strain ability (even at 40 % strain) and good compliance with elastic human skin. Owing to the PEDOT:PSS with high temperature-sensitivity, G with 2D structure and excellent thermal conductivity, thermoplastic polyurethane (TPU) nanofiber with microporous structure, the fabricated sensor has high sensitivity and fast response speed. Benefiting from the microchannel and hydrophobic properties of the nanofiber substrate, the sensor has outstanding breathability and sweat resistance, laying the foundation for long-term wear comfort. Meanwhile, an electromechanical system and 4x4 temperature array have been built and applied to monitor human temperature and recognize the temperature distribution of objects successfully. This study provides a practical and optimized method for real-time and stable monitoring of human health.

关键词： Wearable temperature sensor Multi-polygonal structure Strain-insensitive 3D printed Skin temperature monitoring

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Integrated plasmonic full adder based on cascaded rectangular ring resonators for optical computing

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OPTICS AND LASER TECHNOLOGY 2022年 156卷

作者： Ye, Yichen Xie, Yiyuan Song, Tingting Guan, Nan Lv, Mingsong Li, Chuandong Southwest Univ Sch Elect & Informat Engn Chongqing 400715 Peoples R China Hong Kong Polytech Univ Dept Comp Hong Kong Peoples R China Chongqing Key Lab Nonlinear Circuits & Intelligen Chongqing 400715 Peoples R China Chongqing Normal Univ Sch Comp & Informat Sci Chongqing 401331 Peoples R China City Univ Hong Kong Dept Comp Sci Hong Kong Peoples R China

A novel and integrated plasmonic full adder based on cascaded rectangular ring resonators for optical computing is presented. This full adder consists of cascaded rectangular ring resonators covered by graphene layer and resonator-enhanced waveguide crossings. Owing to the nonlinear optical properties of graphene, the plasmonic resonators can work as all-optical switches with low power consumption and ultrashort response time to change the propagation path of surface plasmon polaritons (SPPs). Finite-difference time-domain (FDTD) simulation results numerically verify the realization of full-adder operations. This proposed plasmonic device can realize the optical full-adder operations with small feature size, fast response time, and lower power consumption than when using other traditional nonlinear optical Kerr materials. It can provide new concepts to design novel optical computing devices.

关键词： All-optical full adder Graphene Metal-insulator-metal (MIM) waveguide Optical computing Surface plasmon polaritons

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NiTe₂-based electrochemical capacitors with high-capacitance AC line filtering for regulating TENGs to steadily drive LEDs

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NANO ENERGY 2021年 84卷

作者： Tang, Haichao Xia, Kequan Lu, Jianguo Fu, Jiangming Zhu, Zhiyuan Tian, Yang Wang, Yang Liu, Meiqin Chen, Jian Xu, Zhiwei Guo, Yichuan Khatoon, Rabia Chen, Hongwen Ye, Zhizhen Zhejiang Univ Sch Mat Sci & Engn State Key Lab Silicon Mat Key Lab Biomed EngnMinist Educ Hangzhou 310027 Peoples R China Zhejiang Univ Ocean Coll Zhoushan 316021 Peoples R China Zhejiang Univ Ningbo Res Inst Ningbo 315100 Peoples R China Southwest Univ Coll Elect & Informat Engn Chongqing Key Lab Nonlinear Circuits & Intelligen Chongqing 400715 Peoples R China Zhejiang Univ Coll Elect Engn State Key Lab Ind Control Technol Hangzhou 310027 Peoples R China Zhejiang Univ Sch Mech Engn State Key Lab Fluid Power & Mechatron Syst Hangzhou Peoples R China

Recently, electrochemical capacitors (ECs) have attracted consideration as AC line filter capacitors to replace the current aluminum electrolytic capacitors (AECs), which is an important direction of circuit integration miniaturization. In this work, a simple one-step hydrothermal method without additives was used to prepare vertically oriented NiTe2 nanosheets on nickel foam, which provides large surface area and fast charge transport. The NiTe2 ECs exhibit true pseudocapacitive nature, stable rate capability, efficient charge transport and high cyclic stability. In addition, they also deliver a super high specific area capacitance of 846.47 mu F cm(-2) at 120 Hz, while retaining small resistor-capacitor (RC) time constant of 1.01 ms and large negative phase angle of 52.7 degrees, indicating its excellent filtering performance. As expected, the NiTe2 ECs perform evidently better filtering effect than commercial AECs when used as filter capacitors in circuits. From a practical point of view, we applied the NiTe2 filter capacitor to regulate the triboelectric nanogenerator (TENG) output, successfully supplying a light-emitting diode (LED) in a steady state. The NiTe2 filter capacitor proposed in this work can be fully used as a large-capacitance, small-size filter capacitor for portable devices and also applied to actual AC line circuits in the future.

关键词： Electrochemical capacitor AC line filter NiTe2 nanosheets Triboelectric nanogenerator High specific capacitance

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