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Highly Efficient Methanol Oxidation Reaction Achieved by Cobalt Doping in Delafossite AgNi1-XCoXO2 Solid Solution

ACS APPLIED ENERGY MATERIALS 2022年第10期5卷 12485-12495页

作者： Zhang, Xulei Kong, Lingwei Xing, Wanpei Zhang, Yan Yang, Jianhua Zhou, Chao Liu, Hai Yang, Zhuoqing Zhu, Wenhuan Wei, Hao Shanghai Jiao Tong Univ Sch Elect Informat & Elect Engn Dept Micro Nano Elect Shanghai 200240 Peoples R China Shanghai Univ Key Lab Adv Display & System Applicat Minist Educ Shanghai 200072 Peoples R China

Developing highly active and durable non-platinum catalysts for methanol oxidation is of great significance for direct methanol fuel cells. However, their electrocatalytic efficiency is still insufficient mainly due to their poor electrical conductivity and slow reaction kinetics. Herein, a non-Pt electrocatalyst AgNi0.8Co0.2O2 with a delafossite structure is facilely constructed via a cation-exchange strategy for the methanol oxidation reaction in alkaline media. The introduction of Co atoms is favorable to crystallization for boosting the synthesis procedure. Meanwhile, the uniform distribution of Co and Ni in the structure brings about additional oxygen vacancies in the materials, thereby improving the intrinsic methanol oxidation reaction activity of the catalysts, and the introduced Co atoms can help to oxidize intermediates such as formaldehyde. Therefore, the electrocatalyst exhibits excellent electrocatalytic performance (77.6 mA cm-2, 220 mA mg-1) and high selectivity, and it can effectively inhibit the oxygen evolution reaction (310 mV difference from the oxygen evolution reaction potential at 10 mA cm-2). This work not only provides a material system using cheap and effective non-Pt catalysts based on Ag-based delafossite oxides but also sheds light on the engineering of oxygen vacancies of electrocatalysts for developing highperformance direct methanol fuel cells.

关键词： methanol oxidation reaction non-Pt catalysis Ag-based delafossite oxide doping solid solution oxygen vacancy

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Surface defect ordered Cu_(2)ZnSn(S,Se)_(4) solar cells with efficiency over 12% via manipulating local substitution

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Journal of Energy Chemistry 2022年第4期31卷 555-562页

作者： Changcheng Cui Dongxing Kou Wenhui Zhou Zhengji Zhou Shengjie Yuan Yafang Qi Zhi Zheng Sixin Wu Key lab for Special Functional Materials Ministry of EducationNational&Local Joint Engineering Research Center for High-Efficiency Display and Lighting TechnologySchool of Materials Science and EngineeringCollaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004HenanChina Inst Surface Micro&Nano Mat Coll Adv Mat&EnergyKey Lab Micronano Energy Storage&Convers Mat HeXuchang UniversityXuchang 461000HenanChina

The environmentally friendly Cu_(2)ZnSn(S,Se)_(4)(CZTSSe) compounds are promising direct bandgap materials for application in thin film solar cells, but the spontaneous surface defects disordering would lead to large open-circuit voltage deficit(V_(oc,deficit)) and significantly limit kesterite photovoltaics performance,primarily arising from the generated more recombination centers and insufficient p to n conversion at p-n junction. Herein, we establish a surface defects ordering structure in CZTSSe system via local substitution of Cu by Ag to suppress disordered Cu_(Zn) defects and generate benign n-type Zn_(Ag) donors. Taking advantage of the decreased annealing temperature of Ag F post deposition treatment(PDT), the high concentration of Ag incorporated into surface absorber facilitates the formation of surface ordered defect environment similar to that of efficient CIGS PV. The manipulation of highly doped surface structure could effectively reduce recombination centers, increase depletion region width and enlarge the band bending near p-n junction. As a result, the Ag F-PDT device finally achieves maximum efficiency of 12.34% with enhanced V_(oc) of 0.496 V. These results offer a new solution route in surface defects and energy-level engineering, and open the way to build up high quality p-n junction for future development of kesterite technology.

关键词： Kesterite Cu_(2)ZnSn(S,Se)_(4)thin film solar cells Interface recombination Defect passivation Ag substitution

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On the accurate characterization of quantum-dot light-emitting diodes for display applications

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npj Flexible Electronics 2022年第1期6卷 351-362页

作者： Wangxiao Jin Yunzhou Deng Bingbing Guo Yaxiao Lian Baodan Zhao Dawei Di Xiaowei Sun Kai Wang Shuming Chen Yixing Yang Weiran Cao Song Chen Wenyu Ji Xuyong Yang Yuan Gao Shuangpeng Wang Huaibin Shen Jialong Zhao Lei Qian Fushan Li Yizheng Jin Key Laboratory of Excited-State Materials of Zhejiang Province State Key Laboratory of Silicon MaterialsDepartment of ChemistryZhejiang University310027 HangzhouChina State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang University310027 HangzhouChina Department of Electronic and Electrical Engineering Southern University of Science and Technology518055 ShenzhenChina TCL Research ShenzhenGuangdongChina Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. LtdShenzhenGuangdongChina College of Chemistry Chemical Engineering and Materials ScienceSoochow University199 Ren’ai Rd215123 SuzhouJiangsuChina Key Lab of Physics and Technology for Advanced Batteries(Ministry of Education) College of PhysicsJilin University130023 ChangchunChina Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University149 Yanchang RoadShanghai 200072China Najing Technology Corporation Ltd Hangzhou 310052China Institute of Applied Physics and Materials Engineering University of MacaoTaipaMacaoSAR 999078China Key Laboratory for Special Functional Materials of Ministry of Education National&Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technologyand Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004China School of Physical Science and Technology MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and MaterialsGuangxi Key Laboratory of Processing for Non-ferrous Metals and Featured MaterialsGuangxi UniversityNanning 530004China Division of Functional Materials and Nanodevices Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China College of Physics and Information Engineering Fuzhou UniversityFuzhou 350108China

Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display *** the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different ***,we report a comprehensive study on the characterizations of QLEDs using various *** show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device *** errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay ***,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.

关键词： diodes characterization luminous

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Synthesis and properties of novel N,C,N terdentate skeleton based on 1,3-di(pyridin-2-yl)benzene moiety-new tricks for old dogs

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Chinese Chemical Letters 2019年第11期30卷 1951-1954页

作者： Shuai Tan Xiugang Wu Yanqiong Zheng Yafei Wang a Jiangsu Engineering Laboratory of Light-Electricity-Heat Energy-Converting Materials and Applications Jiangsu Key Laboratory of Environmentally Friendly Polymeric MaterialsJiangsu Collaboration Innovation Center of Photovoltaic Science and EngineeringSchool of Materials Science&EngineeringChangzhou UniversityChangzhou 213164China b College of Chemistry Key Lab of Environment-Friendly Chemistry and Application of the Ministry of EducationXiangtan UniversityXiangtan 411105China c Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China

Utilization of intermolecular Friedel-Crafts and intramolecular condensation reaction,novel 1,3-di-(pyridine-2-yl)benzene(N,C,N terdentate)skeleton with electro-withdrawing group in 6'position of pyridyl and a cyclization between 6'position of pyridyl and 6 position of benzyl ring were firstly designed and *** structures of these novel N,C,N terdentate were confirmed by NMR,MS and X-ray single *** photophysical properties of these compounds were briefly explored.

关键词： 1,3-Di(pyridin-2-yl)benzene skeleton Platinum complex Synthesis Intramolecular cyclization

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High color rendering index white LEDs fabricated using InP/ZnS green-emitting quantum dots and InP/ZnSe/ZnS red-emitting quantum dots

High color rendering index white LEDs fabricated using InP/Z...

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16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors (第十六届中国国际半导体照明论坛暨2019国际第三代半导体论坛)

作者： Doudou Zhang Yuxian Yan Fan Cao Gongli Lin Xuyong Yang Wanwan Li Luqiao Yin Jianhua Zhang School of Materials Science and Engineering Shanghai UniversityShanghai 200072China Key Laboratory Key Laboratory of Advanced Display and System Applications Shanghai UniversityMinistry of Education State Key Lab of Metal Matrix Composites School of Materials Science and EngineeringShanghai Jiao T Key Laboratory of Advanced Display and System Applications Shanghai UniversityMinistry of Education Key Laboratory of Advanced Display and System Applications Shanghai UniversityMinistry of Education

ISBN: (数字)9781728157566

ISBN: (纸本)9781728157573

Quantum dots(QDs)have the advantages of spectrally adjustable,high quantum yield and narrow half-peak width,and are the most potential light-converting materials for white light that achieve high color rendering index and high *** InGaN blue light chip currently used excites Ce-doped yttrium aluminum garnet(YAG: Ce3+)yellow phosphor,and the white light-emitting diode(WLED)realized exhibits color rendering index(CRI)<80 and an unsatisfactory color coordinate because of lack of red spectral *** order to improve the CRI of white LEDs,in this paper,we fabricated InP/ZnS green-emitting QDs and InP/ZnSe/ZnS red-emitting QDs,and excited YAG: Ce3+yellow phosphor,InP/ZnS green-emitting QDs and InP/ZnSe/ZnS red-emitting QDs with blue chip,made WLED(Ⅰ),and compared with WLED(Ⅱ)generated by using blue LED chip to excite YAG: Ce3+yellow *** result shows that the WLED(Ⅰ)achieves a CRI of 90.3 at a driving current of 5 *** Commission International de L'Eclairage(CIE)chromaticity coordinates are(0.3393,0.3342),and the correlated color temperature(CCT)is 5186K,which is high quality white light close to sunlight.

关键词： Light emitting diodes II-VI semiconductor materials Zinc compounds Phosphors Color Indium phosphide III-V semiconductor materials

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Publisher Correction: Fabrication of red-emitting perovskite LEDs by stabilizing their octahedral structure

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Nature 2024年第8020期631卷 E10页

作者： Lingmei Kong Yuqi Sun Bin Zhao Kangyu Ji Jie Feng Jianchao Dong Yuanzhi Wang Zirui Liu Shabnum Maqbool Yunguo Li Yingguo Yang Linjie Dai Wanhee Lee Changsoon Cho Samuel D Stranks Richard H Friend Ning Wang Neil C Greenham Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China. Cavendish Laboratory University of Cambridge Cambridge UK. College of Physics Jilin University Changchun China. Department of Chemical Engineering and Biotechnology University of Cambridge Cambridge UK. CAS Key Laboratory of Crust-Mantle Materials and Environments School of Earth and Space Sciences University of Science and Technology of China Hefei China. Shanghai Synchrotron Radiation Facility (SSRF) Zhangjiang Lab Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai China. School of Microelectronics Fudan University Shanghai China. Department of Material Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang Republic of Korea. Institute for Convergence Research and Education in Advanced Technology Yonsei University Seoul Republic of Korea. College of Physics Jilin University Changchun China. ningwang@***. Cavendish Laboratory University of Cambridge Cambridge UK. ncg11@cam.ac.uk. Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China. yangxy@***. Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai China. yangxy@***.

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Recent advances in Triboelectric Nanogenerators: From Technological Progress to Commercial applications

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ACS Nano 2023年第12期17卷 11087-11219页

作者： Choi, Dongwhi Lee, Younghoon Lin, Zong-Hong Cho, Sumin Kim, Miso Ao, Chi Kit Soh, Siowling Sohn, Changwan Jeong, Chang Kyu Lee, Jeongwan Lee, Minbaek Lee, Seungah Ryu, Jungho Parashar, Parag Cho, Yujang Ahn, Jaewan Kim, Il-Doo Jiang, Feng Lee, Pooi See Khandelwal, Gaurav Kim, Sang-Jae Kim, Hyun Soo Song, Hyun-Cheol Kim, Minje Nah, Junghyo Kim, Wook Menge, Habtamu Gebeyehu Park, Yong Tae Xu, Wei Hao, Jianhua Park, Hyosik Lee, Ju-Hyuck Lee, Dong-Min Kim, Sang-Woo Park, Ji Young Zhang, Haixia Zi, Yunlong Guo, Ru Cheng, Jia Yang, Ze Xie, Yannan Lee, Sangmin Chung, Jihoon Oh, Il-Kwon Kim, Ji-Seok Cheng, Tinghai Gao, Qi Cheng, Gang Gu, Guangqin Shim, Minseob Jung, Jeehoon Yun, Changwoo Zhang, Chi Liu, Guoxu Chen, Yufeng Kim, Suhan Chen, Xiangyu Hu, Jun Pu, Xiong Guo, Zi Hao Wang, Xudong Chen, Jun Xiao, Xiao Xie, Xing Jarin, Mourin Zhang, Hulin Lai, Ying-Chih He, Tianyiyi Kim, Hakjeong Park, Inkyu Ahn, Junseong Huynh, Nghia Dinh Yang, Ya Wang, Zhong Lin Baik, Jeong Min Choi, Dukhyun Kyung Hee University Gyeonggi Yongin17104 Korea Republic of Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology 77 Massachusetts Avenue CambridgeMA02139 United States Department of Mechanical Engineering Soft Robotics Research Center Seoul National University Seoul08826 Korea Republic of Department of Mechanical Engineering Gachon University Seongnam13120 Korea Republic of Department of Biomedical Engineering National Taiwan University Taipei10617 Taiwan Frontier Research Center on Fundamental and Applied Sciences of Matters National Tsing Hua University Hsinchu30013 Taiwan School of Advanced Materials Science & Engineering Sungkyunkwan University Suwon16419 Korea Republic of Sungkyunkwan University 2066 Seobu-ro Gyeonggi Suwon16419 Korea Republic of Department of Chemical and Biomolecular Engineering National University of Singapore 4 Engineering Drive 4 117585 Singapore Division of Advanced Materials Engineering Jeonbuk National University 567 Baekje-daero Jeonbuk Jeonju54896 Korea Republic of Jeonbuk National University 567 Baekje-daero Jeonbuk Jeonju54896 Korea Republic of Department of Physics Inha University 100 Inha-ro Incheon22212 Korea Republic of School of Materials Science & Engineering Yeungnam University Gyeongbuk Gyeongsan38541 Korea Republic of 291 Daehak-ro Daejeon34141 Korea Republic of School of Materials Science and Engineering Nanyang Technological University 50 Nanyang Avenue 639798 Singapore Institute of Flexible Electronics Technology of Tsinghua Zhejiang Jiaxing314000 China Nanomaterials and System Lab Major of Mechatronics Engineering Faculty of Applied Energy System Jeju National University Jeju632-43 Korea Republic of School of Engineering University of Glasgow GlasgowG128QQ United Kingdom Seoul02792 Korea Republic of Department of Physics Inha University Incheon22212 Korea Republic of Suwon16419 Korea Republic of Department of

Serious climate changes and energy-related environmental problems are currently critical issues in the world. In order to reduce carbon emissions and save our environment, renewable energy harvesting technologies will serve as a key solution in the near future. Among them, triboelectric nanogenerators (TENGs), which is one of the most promising mechanical energy harvesters by means of contact electrification phenomenon, are explosively developing due to abundant wasting mechanical energy sources and a number of superior advantages in a wide availability and selection of materials, relatively simple device configurations, and low-cost processing. Significant experimental and theoretical efforts have been achieved toward understanding fundamental behaviors and a wide range of demonstrations since its report in 2012. As a result, considerable technological advancement has been exhibited and it advances the timeline of achievement in the proposed roadmap. Now, the technology has reached the stage of prototype development with verification of performance beyond the lab scale environment toward its commercialization. In this review, distinguished authors in the world worked together to summarize the state of the art in theory, materials, devices, systems, circuits, and applications in TENG fields. The great research achievements of researchers in this field around the world over the past decade are expected to play a major role in coming to fruition of unexpectedly accelerated technological advances over the next decade. © 2023 The Authors. Published by American Chemical Society

关键词： Nanogenerators

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Correction: Atomically flat semiconductor nanoplatelets for light-emitting applications

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Chemical Society reviews 2023年第4期52卷 1519页

作者： Bing Bai Chengxi Zhang Yongjiang Dou Lingmei Kong Lin Wang Sheng Wang Jun Li Yi Zhou Long Liu Baiquan Liu Xiaoyu Zhang Ido Hadar Yehonadav Bekenstein Aixiang Wang Zongyou Yin Lyudmila Turyanska Jochen Feldmann Xuyong Yang Guohua Jia Key Lab for Special Functional Materials Ministry of Education National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology School of Materials Science and Engineering and Collaborative Innovation Center of Nano Functional Materials and Applications Henan University Kaifeng 475004 China. Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai 200072 China. yangxy@***. School of Electronics and Information Technology Sun Yat-sen University Guangzhou 510275 China. Key Laboratory of Automobile Materials Ministry of Education College of Materials Science and Engineering Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials Electron Microscopy Center Jilin University Changchun 130012 China. Institute of Chemistry and the Center for Nanoscience and Nanotechnology The Hebrew University of Jerusalem Jerusalem 91904 Israel. Department of Materials Science and Engineering Technion-Israel Institute of Technology Haifa 32000 Israel. School of Chemistry and Chemical Engineering Linyi University Linyi 276005 P. R. China. Research School of Chemistry The Australian National University ACT 2601 Australia. Faculty of Engineering The University of Nottingham Additive Manufacturing Building Jubilee Campus University Park Nottingham NG7 2RD UK. Chair for Photonics and Optoelectronics Nano-Institute Munich and Department of Physics Ludwig-Maximilians-Universität (LMU) Königinstr. 10 Munich 80539 Germany. School of Molecular and Life Sciences Curtin University Perth WA 6102 Australia. guohua.jia@curtin.edu.au.

Correction for 'Atomically flat semiconductor nanoplatelets for light-emitting applications' by Bing Bai , , 2023, , 318-360, https://***/10.1039/D2CS00130F.

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Lead-Free Nanocrystals: Bright Blue Light-Emitting Doped Cesium Bromide Nanocrystals: Alternatives of Lead-Free Perovskite Nanocrystals for White LEDs (advanced Optical Materials 10/2019)

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advanced Optical Materials 2019年第10期7卷

作者： Zhiwen Yang Zhao Jiang Xinyi Liu Xiaochuan Zhou Jianhua Zhang Wanwan Li State Key Lab of Metal Matrix Composites School of Materials Science and Engineering Shanghai Jiao Tong University 800 Dongchuan Road Shanghai 200240 P. R. China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

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High-efficiency, broad-band and wide-angle optical absorption in ultra-thin organic photovoltaic devices

High-efficiency, broad-band and wide-angle optical absorptio...

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作者： Wang, Wenyan Hao, Yuying Cui, Yanxia Tian, Ximin Zhang, Ye Wang, Hua Shi, Fang Wei, Bin Huang, Wei Key Lab. of Advanced Transducers and Intelligent Control System Ministry of Education Taiyuan University of Technology Taiyuan 030024 China Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology Taiyuan 030024 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Yanchang Road 149 Shanghai 200072 China Nanjing 210046 China

Metal nanogratings as one of the promising architectures for effective light trapping in organic photovoltaics (OPVs) have been actively studied over the past decade. Here we designed a novel metal nanowall grating with ultra-small period and ultra-high aspect-ratio as the back electrode of the OPV device. Such grating results in the strong hot spot effect in-between the neighboring nanowalls and the localized surface plasmon effect at the corners of nanowalls. These combined effects make the integrated absorption efficiency of light over the wavelength range from 400 to 650 nm in the active layer for the proposed structure, with respect to the equivalent planar structure, increases by 102% at TM polarization and by 36.5% at the TM/TE hybrid polarization, respectively. Moreover, it is noted that the hot spot effect in the proposed structure is more effective for ultra-thin active layers, which is very favorable for the exciton dissociation and charge collection. Therefore such a nanowall grating is expected to improve the overall performance of OPV devices. © 2014 Optical Society of America.

关键词： Light absorption

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