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Synthesis, Characterization, Photophysical and Electroluminescent Properties of Iridium Complexes with Cf3-Substituted 1,3,4-Oxadiazole Amide Ancillary Ligands

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SSRN 2023年

作者： Zhang, Fuli Li, Ting Zhao, Yunping Feng, Cuilan Han, Huabo Wei, Donghui Li, Zhongyi Zhai, Bin Liu, Daosheng Wei, Bin School of Petrochemical Engineering Liaoning Petrochemical University Fushun113001 China Engineering Technical Research Centre for Optoelectronic Functional Materials of Henan Province Key Laboratory of Biomolecular Recognition and Sensing of Henan Province College of Chemistry and Chemical Engineering Shangqiu Normal University Shangqiu476000 China Key Laboratory of Advanced Display and System Applications Ministry of Education School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China College of Chemistry and Molecular Engineering Zhengzhou University Zhengzhou450001 China Shanxi Datong University China

In this work, we synthesized four new heteroleptic iridium(III) complexes Ir1−Ir4 using CF3-substituted 1,3,4-oxadiazole amide with excellent electron mobility as ancillary ligands. Crystal structure, photophysical and electrochemical properties of Ir1−Ir4 were studied in detail, and theoretical calculations were performed to interpret their photophysical behaviors. At room temperature, complexes Ir1 and Ir2 emit almost coincident green phosphorescence peaked at 506 nm with Commission Internationale de l’Eclairage (CIE) color coordinates of (0.21, 0.64) and (0.24, 0.64), respectively. Complexes Ir3 and Ir4 exhibit greenish blue and greenish yellow light with double-peaks structure located at 496 and 531 nm with CIE color coordinates of (0.20, 0.40) and (0.30, 0.52), respectively. The phosphorescent organic light-emitting diodes (PHOLEDs) based on these complexes exhibit very mild efﬁciency roll-off, which is attributed to the application of the emitters using CF3-substituted 1,3,4-oxadiazole amide with excellent electron mobility as ancillary ligands. © 2023, The Authors. All rights reserved.

关键词： Iridium compounds

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Buried hole-selective interface engineering for high-efficiency tin-lead perovskite solar cells with enhanced interfacial chemical stability

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Science Bulletin 2025年第4期70卷 556-562页

作者： Xu Zhang Jorge Pascual Zhihao Li Xilin Zhang Zhenhuang Su Junhan Zhang Xingyu Gao Bo Hou Guixiang Li Antonio Abate Meng Li Key Lab for Special Functional Materials of Ministry of Education National&Local Joint Engineering Research Center for High-efficiency Display and Lighting TechnologySchool of Nanoscience and Materials Engineeringand Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004China Polymat University of the Basque Country UPV/EHUDonostia-San Sebastián 20018Spain School of Physics Henan Normal UniversityXinxiang 453007China Shanghai Synchrotron Radiation Facility(SSRF) Shanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201204China School of Physics and Astronomy Cardiff UniversityCardiffWalesCF243AAUK Institute of Chemical Sciences and Engineering École Polytechnique Fédérale de Lausanne(EPFL)LausanneCH-1015Switzerland Helmholtz-Zentrum Berlin für Materialien und Energie GmbH Hahn-Meitner-Platz 1Berlin14109Germany

Mixed Sn-Pb perovskites are attracting significant attention due to their narrow bandgap and consequent potential for all-perovskite tandem solar ***,the conventional hole transport materials can lead to band misalignment or induce degradation at the buried interface of *** we designed a self-assembled material 4-(9H-carbozol-9-yl)phenylboronic acid(4PBA)for the surface modification of the substrate as the hole-selective *** incorporates an electron-rich carbazole group and conjugated phenyl group,which contribute to a substantial interfacial dipole moment and tune the substrate’s energy levels for better alignment with the Sn-Pb perovskite energy levels,thereby promoting hole ***,enhanced perovskite crystallization and improved contact at bottom of the perovskite minimized defects within perovskite bulk and at the buried interface,suppressing non-radiative ***,Sn-Pb perovskite solar cells using 4PBA achieved efficiencies of up to 23.45%.Remarkably,the 4PBA layer provided superior interfacial chemical stability,and effectively mitigated device *** devices retained 93.5%of their initial efficiency after 2000 h of shelf storage.

关键词： Sn-Pb perovskite Hole-selective materials Interfacial chemical stability Dipole moment High efficiency

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Impact of Thickness in Ultra-Thin Ald-Processed HfO2 Gate Dielectric on the Performance of Low-Operating Voltage Thin-Film Transistors

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SSRN 2024年

作者： Chen, Minyu Chen, Huimin Solano, Eduardo Merino, Danile Hermida Hua, Wenqiang Ding, Xingwei Wei, Bin Liao, Yingjie Wu, Bing Microelectronic R&D Center School of Mechanical & Electronic Engineering and Automation Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China Laboratory CNRS ERL 7004 University of Technology of Troyes 12 rue Marie Curie Troyes10004 Cedex France NCD-SWEET beamline ALBA Synchrotron Cerdanyola del Vallès Barcelona08290 Spain Shanghai Advanced Research Institute Chinese Academy of Sciences 201210 China 71 Avenue Des Martyrs CS 40220 Grenoble38043 France Magnetic Resonance Research Center Institute for Molecules and Materials Radboud University Nijmegen Netherlands

The effective reduction in the thickness of the metal gate while retaining its defect-free morphology and high dielectric properties is of great interest for producing low-power-consumption and high-performance thin film transistors (TFTs). In this study, a series of ultrathin hafnium dioxide (HfO2) coating layer with different thickness were prepared by atomic layer deposition (ALD) as TFT dielectrics. In XPS analyses, it was observed that the ratio of HfOx to HfO2 decreases with the increasing thickness of the HfO2 layer. Concurrently, the ratio of O species outside HfO2 also decreases as the thickness of the HfO2 layer increases. These HfO2 films were further examined by grazing incidence small and wide-angle x-ray scattering (GISAXS/GIWAXS), atomic force microscope (AFM) and X-ray to understand the impact of these films’ thickness on their morphological and topological properties. Afterwards, the dielectric properties of all these films were analyzed by the impedance measurement, it was found that the optimized 10 nm HfO2 thin film can exhibit a low-leakage current density of 13 nA cm−2 at 1 V and a permittivity of 5.98. Finally, the as-fabricated ZnO TFT with a 10 nm HfO2 gate dielectric layer was found to be able to operate at an ultra-low voltage of -1.59 V with a very high current on/off ratio, which is larger than 106. This result demonstrates the critical importance in controlling the thickness of dielectric layer to achieving high-performance TFTs and its profound potential in the applications of low-power consumption microelectronics. © 2024, The Authors. All rights reserved.

关键词： Thin films

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Electro-optical performance of OLED with MEH-PPV fabricated by solution process 26

Electro-optical performance of OLED with MEH-PPV fabricated ...

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26th International display Workshops, IDW 2019

作者： Lee, Seok Je Yao, Fangnan Lee, Seung Il Jin, Cao Kim, Woo Young Moon, C.-B. Jhun, Chul Gyu Department of Electronic Display Engineering Hoseo University Asan31499 Korea Republic of Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai200072 China

ISBN: (纸本)9781713806301

We investigated the effects of solvents and concentration on the electro-optical performance of the organic light emitting diode (OLED) fabricated by the solution process. From the experimental results, we optimized the fabrication method of it and we figure out the underlying mechanism of carrier flow by the trap state. © 2019 ITE and SID.

关键词： Fabrication

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Influence of reaction parameters on the luminescence properties of monodisperse NaGd（1-x-y）（WO4）2:xEu3+,yTb3+ phosphor by molten salt synthesis

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Journal of Rare Earths 2018年第1期36卷 49-57页

作者： Weiqin Xiao Luqiao Yin Jipeng Zhou Fang Lei Ying Shi Jianjun Xie Lei Zhang School of Materials Science and Engineering Shanghai University Key Laboratory of Advanced Display and System Applications Ministry of Education (Shanghai University)

Eu3+activated and Eu3+, Tb3+co-activated monodisperse sodium double tungstates NaGd（WO4）2 phosphors were prepared by molten salt method at 750 ℃ for 10 h using NaCl as a flux. The crystal structure and morphology of the as-synthesized phosphors were measured by XRD and SEM, respectively. The photoluminescence properties were characterized by PL spectra, decay lifetime and CIE. The presence of NaCl plays an important role in the morphology and luminescence properties. In this work,NaCl and one of the raw material Na2CO3in a certain proportion will form a low eutectic salt to decrease the reaction temperature and benefit the formation of monodisperse NaGd（WO4）2crystals. The color of Eu3+and Tb3+co-doped NaGd（WO4）2phosphors can be tuned from creamy white to orange, red and green by adjusting the doping concentration of rare earth ions, since the emission contain the broad blue-green emission origin from NaGd（WO4）2host and characteristic red and green emission origin from Eu3+and Tb3+ions. The electroluminescent spectra and CIE measurement shows that the LED device with NaGd（1-x）（WO4）2:xEu3+（x = 0.24） phosphor can be excited by 365 nm and 380 nm LED chip, and their CIE coordinate is（x = 0.45, y = 0.45） and（x = 0.36, y = 0.37）, Ra is 80.3 and 86.3, Tcis 3196 and4556 K, respectively. As a single-component phosphor, NaGd（WO4）2:Eu3+,Tb3+have potential application in UV-pumped WLEDs.

关键词： NaGd（1-x-y）（WO4）2:xEu3+ yTb3+ Molten salt method Single component WLEDs White light

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P-13.3: Thermally Activated Delayed Fluorescent Host for Highly Efficient and Stable Deep-Red OLEDs

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SID Symposium Digest of Technical Papers 2022年第S1期53卷

作者： Ke Wang Rongrong Xia Jianfeng Guo Zhen Zhang Zixing Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd. Shanghai 200072 P. R. China

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Aqueous Sr-doped In2O3 TFT stability under negative bias illumination stress

Aqueous Sr-doped In2O3 TFT stability under negative bias ill...

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International Conference on display Technology, ICDT 2019

作者： Zhou, Youhang Li, Jun Yang, Yaohua Li, Xifeng Zhang, Jianhua School of Material Science and Engineering Shanghai University Shanghai Jiading China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China

ISBN: (纸本)9781510896161

In this paper, the Sr-doped In2O3 thin film is fabricated by aqueous route and the stability of InSrO thin film transistor under negative bias illumination stress (NBIS) is investigated. It is found that Sr can effectively improve the stability of In2O3 TFTs under NBIS, which is due to the reduction of oxygen vacancies. The XPS measurement is tested to analyze the variation of oxygen vacancy concentration. The density of states is calculated to further confirm the decrease of total trap state caused by Sr doping. © 2019, John Wiley and Sons Inc. All rights reserved.

关键词： Thin film transistors

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Synthesis and properties of novel N,C,N terdentate skeleton based on 1,3-di(pyridin-2-yl)benzene moiety-new tricks for old dogs

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Chinese Chemical Letters 2019年第11期30卷 1951-1954页

作者： Shuai Tan Xiugang Wu Yanqiong Zheng Yafei Wang a Jiangsu Engineering Laboratory of Light-Electricity-Heat Energy-Converting Materials and Applications Jiangsu Key Laboratory of Environmentally Friendly Polymeric MaterialsJiangsu Collaboration Innovation Center of Photovoltaic Science and EngineeringSchool of Materials Science&EngineeringChangzhou UniversityChangzhou 213164China b College of Chemistry Key Lab of Environment-Friendly Chemistry and Application of the Ministry of EducationXiangtan UniversityXiangtan 411105China c Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China

Utilization of intermolecular Friedel-Crafts and intramolecular condensation reaction,novel 1,3-di-(pyridine-2-yl)benzene(N,C,N terdentate)skeleton with electro-withdrawing group in 6'position of pyridyl and a cyclization between 6'position of pyridyl and 6 position of benzyl ring were firstly designed and *** structures of these novel N,C,N terdentate were confirmed by NMR,MS and X-ray single *** photophysical properties of these compounds were briefly explored.

关键词： 1,3-Di(pyridin-2-yl)benzene skeleton Platinum complex Synthesis Intramolecular cyclization

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Deep-Blue Electroluminescence of Perovskites with Reduced Dimensionality Achieved by Manipulating Adsorption-Energy Differences

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Angewandte Chemie 2022年第40期134卷

作者： Dr. Jianchao Dong Dr. Feifei Lu Dr. Dongyuan Han Dr. Jie Wang Dr. Ziang Zang Dr. Lingmei Kong Dr. Yu Zhang Dr. Xue Ma Dr. Jianheng Zhou Dr. Huiyu Ji Prof. Xuyong Yang Prof. Ning Wang Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education College of Physics Jilin University Changchun 130012 P. R. China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University 149 Yanchang Road Shanghai 200072 P. R. China

The lagging development of deep-blue perovskite light-emitting diodes (PeLEDs) heavily impedes their practical applications in full-color display due to the absence of spectrally stable emitters and the mismatch of carrier injection capacity. Herein, we report highly efficient deep-blue PeLEDs through a new chemical strategy that addresses the dilemma for simultaneously constant electroluminescence (EL) spectra and high-purify phase in reduced-dimensional perovskites. The success lies in the control of adsorption-energy differences between phenylbutylamine (PBA) and ethylamine (EA) interacting with perovskites, which facilitates narrow n -value distribution. This approach leads to an increased exciton binding energy and enhanced surface potential, hence improving radiative recombination. As a result, an external quantum efficiency of 4.62 % is achieved in PeLEDs with a stable EL peak at 457 nm, demonstrating the best reported result for deep-blue PeLEDs so far.

关键词： Adsorption Energy Deep-Blue Emission Perovskites Reduced Dimensionality

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The narrow-band organic photodetectors based on organic photo-filtering layers using a transfer printing technology

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Scientific Reports 2025年第1期15卷 1-10页

作者： Zhou, Pengchao Gu, Jialu Fan, Lei Ma, Jipeng Sheng, Kuang Lian, Hong Guo, Kunping Shi, Wei Wei, Bin Affiliated Hospital of Jining Medical University Shandong Jining 272000 China School of Mechatronic Engineering and Automation Shanghai University Shanghai Shanghai 200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China Shaanxi Engineering Research Center of Flat Panel Display Technology School of Electronic Information and Artificial Intelligence Shaanxi University of Science and Technology Shaanxi Xi’an 710021 China

Aiming at the response spectral of organic photodetectors (OPDs), we investigate a method of preparing the narrow-band near-infrared (NIR) OPDs by using thin film transfer print technology (TFTPT) to prepare the active layer of bulk heterojunction on the organic photo-filtering layer—a functional layer which can block some specific wavelengths of light and prevent these photons from reaching the next functional layer. Herein, short-wavelength photons are absorbed by the photo-filtering layer to form excitons, but they cannot be successfully dissociated due to the lack of a dissociation interface to the acceptor for eventual composite annihilation. While long-wavelength photons can effectively pass through the photo-filtering layer to reach the active layer and be absorbed and dissociated into free electrons and holes and eventually realize the narrow-band optical response. A narrow-band NIR OPD is prepared with a response peak of 790 nm and a full width at half maximum of 62 nm. Under the bias voltage of -5 V, the responsivity and specific detectivity of the device at 790 nm are 0.24 A/W and 1.39 × 1012 Jones, respectively. The responsivity and specific detectivity of OPDs prepared based on our method can be flexibly adjusted by the combination of different photo-filtering and active layers, and the universality of our method is also proved. © The Author(s) 2025.

关键词： Bulk heterojunction Narrow-band organic photodetectors Near-infrared Thin film transfer printing technology

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