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High-performance,large-area perovskite light-emitting diodes

High-performance,large-area perovskite light-emitting diodes

第10届亚洲和澳大利亚真空与表面科学会议、中国真空学会2021学术年会、第十五届国际真空科学与工程应用学术会议

作者： Lin Wang Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University

Metal halide perovskites based light-emitting diodes (PeLEDs) have attracted extensive attention for lighting and display applications because of their excellent advantages,such as narrow emission bandwidth,color tuna... 详细信息

关键词： metal halide perovskite light-emitting diodes large-area

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Subthreshold Swing Model of GaN-Based Fin-Gate High Electron Mobility Transistors

Subthreshold Swing Model of GaN-Based Fin-Gate High Electron...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Hanlin Yang Jiayi Yang Tiantian Guan Kailin Ren School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China

Compared to the traditional HEMTs, better gate control ability especially smaller subthreshold swing, can be achieved with a fin-gate structure, which can be widely used in power, RF circuits. However, there has been few works related to subthreshold swing reported previously. In this study, a Fin- HEMT device is investigated by TCAD simulation, and a subthreshold swing model was constructed. The simulation results verify the performance of the model. According to the simulation results, with an error of less than 6%, this work provide design guidlines for the research of Fin-HEMT devices.

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A Monolithically Integrated Voltage Reference based on AlGaN/GaN Schottky Gate HEMTs

A Monolithically Integrated Voltage Reference based on AlGaN...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Wenqing Lu Luqiao Yin Jianhua Zhang Kailin Ren Shanghai University Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) School of Microelectronics Shanghai University Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

In this work, a monolithically integrated voltage reference based on AlGaN/GaN Schottky Gate High Electron Mobility Transistor (SG-HEMTs) technology is proposed and studied by TCAD simulations. This simple but stable voltage reference consists of only two D-mode transistors with different threshold voltages, which can generate a predictable reference voltage (V REF ) and maintain high stability over a wide range of supply voltage and temperature. It is verified by TCAD simulations that V REF of 1.48V is realized for the power supply voltage range of 3.3 to 10 V. In the temperature range of 300 K to 500 K, the sensitivity of the VREF line is 0.064%/V and the temperature coefficient is 8.21 ppm/°C. The proposed design of the reference voltage source composed of double D-mode SG-HEMT exhibits high feasibility, and can be used in bias and detection circuits to reduce the circuit complexity and chip area.

关键词： Temperature sensors Temperature distribution Circuits HEMTs Logic gates Threshold voltage Generators Wide band gap semiconductors MODFETs Aluminum gallium nitride

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Organic Memristor Based on High Planar Cyanostilbene/Polymer Composite Films

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Chemical Research in Chinese Universities 2023年第1期39卷 121-126页

作者： ZHAO Jinjin LI Wei WANG Xuechen WEI Xiao ZHU Huiwen QU Wenshan MEN Dandan GAO Zhixiang WEI Bin GAO Hanfei WU Yuchen Department of Physics Shanxi Datong UniversityDatong037009P.R.China Key Laboratory of Bio-inspired Materials and Interfacial Science Technical Institute of Physics and ChemistryChinese Academy of SciencesBeijing100190P.R.China Ji Hua Laboratory Foshan528000P.R.China Shanxi Province Key Laboratory of Microstructure Electromagnetic Functional Materials Institute of Solid State PhysicsShanxi Datong UniversityDatong037009P.R.China School of Chemistry and Chemical Engineering Shanxi Datong UniversityDatong037009P.R.China Key Laboratory of Advanced Display and System Applications Ministry of EducationSchool of Mechatronic Engineering and AutomationShanghai UniversityShanghai200072P.R.China

Organic memristors with low power consumption,fast write/erasure speed,and complementary metal-oxide-semiconductor(CMOS)compatibility have attracted tremendous attention to mimic biological synapses to realize neuromorphic computation in recent *** this paper,organic resistive switching memory(ORSM)based on(Z)-3-(naphthalen-2-yl)-2-(4-nitrophenyl)acrylonitrile(NNA)and polymer poly(N-vinylcarbazole)(PVK)composite film was prepared by spin-coating *** performance based on NNA:PVK composite films with different mass fractions of NNA were systematically *** ORSM based on PVK:40%(mass fraction)NNA composite film exhibited non-volatile and bipolar memory properties with a switching ratio(Ion/Ioff)of 24.1,endurance of 68 times and retention time of 104 s,a“SET”voltage(Vset)of−0.55 V and a“RESET”voltage(Vreset)of 2.35 *** resistive switching was ascribed to the filling and vacant process of the charge traps induced by NNA and the inherent traps in PVK *** holes trapping and de-trapping process occurred when the device was applied with a negative or positive bias,which caused the transforming of the conductive way of charges,that is the resistive behaviors in the *** study provides a promising platform for the fabrication of ORSM with high performance.

关键词： Organic memristor Resistive switching Polymer/molecule composite film

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Synthesis and application of a novel 9,9-diethyl-1,2-diaryl-1,9-dihydrofluoreno[2,3-d]imidazole for blue organic light emitting diode

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Chinese Chemical Letters 2020年第1期31卷 64-66页

作者： Xueying Wang Zhangcheng Liao Tianqi Wang Haixia Lin Zixing Wang Yongmei Cui Department of Chemistry College of Sciences.Shanghai UniversityShanghai 200444China Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai UniversityShanghai 200072China

Two novel 2-(4-(9,9-disubstitued-9 H-fluoren-2-yl)phenyl)-9,9-diethyl-l-phenyl-1,9-dihydrofluoreno-[2,3-d]imidazole derivatives 2 a and 2 b were synthesized and *** photophysical and electrochemical properties,thermal stability property,and electroluminescence(EL)performance of 2 b were *** fabricated device based on 2 b doping into 4,4’-N,N’-dicarbazole-biphenyl(5%)as an emitter present a maximum brightness of 1272 cd/m^2 at 4 V with the CIE coordinate of(0.1590,0.0465).

关键词： Fluorene Imidazole Photoluminescence Electroluminescence

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Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers 4th

Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical...

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4th International Conference on Telecommunications and Communication Engineering, ICTCE 2020

作者： Liu, Cheng Wu, Huizhen School of Microelectronics Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai200072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Department of Physics Zhejiang University Zhejiang Hangzhou310027 China

ISBN: (纸本)9789811656910

1.3μm wafer-bonded vertical-cavity surface-emitting lasers are fabricated, which employ lateral etched p+-InAlAs/n+-InP tunnel junctions as confinement apertures. The VCSEL with a 5μm-diameter aperture exhibits CW operation with threshold current of 0.55 mA, maximum operation temperature up to 82 °C and single-transverse mode emission. The relationship between temperature-dependent characteristics and aperture sizes are discussed. The lateral etched p+-InAlAs/n+-InP tunnel junction aperture is attractive as confinement for high performance wafer-bonded long wavelength VCSELs. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Surface emitting lasers

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Flexible Active-Matrix Micro-LED display Utilizing InSnO TFTs with High Mobility of 39.1 cm2V-1s-1 and Mass-Production Compatible Process

Flexible Active-Matrix Micro-LED Display Utilizing InSnO TFT...

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International Electron Devices Meeting (IEDM)

作者： Zuoxu Yu Yimeng Sang Yuzhen Zhang Yiyang Zhang Runxiao Shi Siyang Liu Tao Tao Xifeng Li Cong Peng Rong Zhang Wangran Wu Zhe Zhuang Bin Liu Weifeng Sun National ASIC System Engineering Research Center School of Integrated Circuits Southeast University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing China School of Integrated Circuits Nanjing University Suzhou China Key Laboratory of Advanced Display and System Applications of the Ministry of Education Shanghai University Shanghai China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

The increasing pursuit of ultrahigh resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed InSnO (ITO) TFTs on flexible substrates and achieved a remarkable average mobility of 39.1 cm 2 V -1 s -1 , via mass-production compatible processes utilizing SiO 2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent wafer-scale uniformity, reliable mechanical flexibility, and robust bending durability. Based on the ITO TFTs, we fabricated flexible 2T1C pixel circuits that can operate in both PAM and PWM schemes. The flip-chip micro-LEDs ( $\mu$ -LEDs) were transferred to a flexible PI holder nondestructively with the assistance of UV tape and present superior robustness and endurance under cyclic bending. Moreover, we bonded $\mu$ -LEDs to the 2T1C pixel circuits and demonstrated a flexible active-matrix $\mu$ -LED display. The feasibility of flexible illumination and image control has been verified, providing great potential for high-resolution flexible displays in the future.

关键词： Degradation Performance evaluation Indium tin oxide Circuits Bending Pulse width modulation Thin film transistors Dielectrics Photomicrography Substrates

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Temperature Endurable Face-Sealing Polyisobutylene Film with Contactable Liquid Desiccant for the Encapsulation of OLEDs

SSRN

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SSRN 2024年

作者： Zheng, Haixai Zhu, Yangyang Zhao, Bingjia Lin, Yang Lan, Weixia Shi, Wei Wei, Bin School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China School of Microelectronics Shanghai University Shanghai200072 China Shanxi Datong University China

We propose a face-sealed encapsulation solution with simple process and low cost. The polyisobutylene encapsulation patch mixed with calcium oxide particles is attached to the surface of the OLEDs that is exposed to the hygroscopic agent in a face-sealing manner. We find that this encapsulation scheme exhibited excellent waterproof performance. The encapsulated OLED has a long shelf lifetime in water under high temperature conditions, which is manifested in a long underwater shelf lifetime of T95 (luminance drops to 95% of the initial luminance) of over 336 hours at 60°C. This strategy can be extended to roll-to-roll processes to expand the application of flexible photoelectronic devices. © 2024, The Authors. All rights reserved.

关键词： Luminance

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Investigation of post-thermal annealing-induced enhancement in photovoltaic performance for squaraine-based organic solar cells

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Frontiers of Materials Science 2020年第1期14卷 81-88页

作者： Rui Zhu Feiyang Liu Zixing Wang Bin Wei Guo Chen Key Laboratory of Advanced Display and System Applications(Ministry of Education) Shanghai UniversityYanchang Road 149Shanghai200072China School of Environmental and Chemical Engineering Jiangsu University of Science and TechnologyZhenjiang212003China

In this work,we have systematically investigated the post-thermal annealing-induced enhancement in photovoltaic performance of a 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl]squaraine(DIBSQ)/C60 planar heterojunction(PHJ)organic solar cells(OSCs).An increased power conversion efficiency(PCE)of 3.28%has been realized from a DIBSQ/C60 device with thermal annealing at 100°C for 4 min,which is about 33%enhancement compared with that of the as-cast *** improvement of the device performance may be mainly ascribed to the crystallinity of the DIBSQ film with post-thermal annealing,which will change the DIBSQ donor and C60 acceptor interface from^PHJ to hybrid planar-mixed *** new donor-acceptor heterojunction structure will significantly improve the charge separation and charge collection efficiency,as well as the open circuit voltage(Voc)of the device,leading to an enhanced *** work provides an effective strategy to improve the photovoltaic performance of SQ-based OSCs.

关键词： organic solar cell squaraine dye post-thermal annealing donor/acceptor interface power conversion efficiency

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Research on panoramic illumination imaging system based on SURF algorithm 18

Research on panoramic illumination imaging system based on S...

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18th China International Forum on Solid State Lighting and 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021

作者： Wang, Fei Ji, Xiaoxiao Yin, Luqiao Guo, Aiying Zhang, Jianhua Shanghai University School of Microelectronics Shanghai201800 China Shanghai University Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai200072 China School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China

ISBN: (纸本)9781665495462

Underwater lighting systems and imaging systems are mainly used in underwater pipeline internal inspection, underwater environment information collection, resource detection, etc. This article explores a panoramic lighting imaging system based on an underwater environment. Mainly from the intelligent lighting system, panoramic imaging system, and system integration optimization. The intelligent lighting system mainly explores a high-brightness intelligent lighting device with a high-brightness lighting system. The imaging system mainly works in conjunction with the lighting system. The imaging system mainly collects 250° panoramic picture information and 250° video information for scientific research and other tasks. Provide appropriate information and data. Finally, system integration optimization and joint work are carried out. © 2021 IEEE.

关键词： Imaging systems

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