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Simulation study on thermal mechanical properties of 4×4 Micro-LED array in flip-chip bonding process 18

Simulation study on thermal mechanical properties of 4×4 Mi...

18th China International Forum on Solid State Lighting and 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021

作者： Ji, Xiaoxiao Wang, Fei Yin, Luqiao Zhang, Jianhua Shanghai University Ministry of Education Key Laboratory of Advanced Display and System Applications Shanghai200072 China School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China School of Microelectronics Shanghai University Shanghai201800 China

ISBN: (纸本)9781665495462

With the advent of the Micro-light-emitting diodes, it has become the focus of display and visible light communication research. However, as the LED chip size shrinks, the difficulty of integration increase gradually. Nowadays, the integration of Micro- LEDs in display is still a challenge for commercialization. In this work, we conducted a comparative study by finite element method simulation to reveal the influencing factors of bonding yield. The results show that stress concentrates at the junction of the bumps and electrodes of Micro-LED chips, and the stress concentration at the corner of Micro-LED array is more seriously. By altering the parameters of bumps, such as shapes and materials to reduce the stress and stress concentration. Numerical simulate results provide theoretical basis for reducing stress and stress concentration and optimizing the bump shape. © 2021 IEEE.

关键词： Light emitting diodes

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Computational Analysis of Quantum Dots as Color Conversion Layer for Micro-LED applications 18

Computational Analysis of Quantum Dots as Color Conversion L...

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18th China International Forum on Solid State Lighting and 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021

作者： Lin, Pengsen Ji, Xiaoxiao Yin, Luqiao Zhang, Jianhua Shanghai University School of Materials Science and Engineering Shanghai200072 China Shanghai University Ministry of Education Key Laboratory of Advanced Display and System Applications Shanghai200072 China School of Mechatronics and Automation Shanghai University Shanghai200072 China

ISBN: (纸本)9781665495462

We propose a simulation scheme for studying quantum dot (QD) light effects of full-color micro-light-emitting-diode (micro-LED) arrays. We have studied the influence of QD thickness and concentration on light efficiency. The results show that the QD concentration and thickness have an impact on the light efficiency. When the thickness of the QD is 5 μm, or the maximum light conversion efficiency can be obtained when the concentration is 0.1 mol/L. By analyzing the light field distribution of different QD thicknesses, the light crosstalk phenomenon is observed. This kind of crosstalk can cause blurry display images and should be avoided. © 2021 IEEE.

关键词： Crosstalk

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Instability Mechanism of Phosphomolybdic Acid Solution and its Effect on Organic Solar Cells as a Hole-Transporting Layer

SSRN

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SSRN 2023年

作者： Chen, Guo Qu, Minghao Li, Yaozhao Li, Peng Yang, Xuyong Wei, Bin School of Materials Science and Engineering Shanghai University Shanghai200072 China School of Medicine Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Yanchang Road 149 Shanghai200072 China

Phosphomolybdic acid (H3PMo12O40, PMA) containing twelve MoO3 units exhibits an efficient hole-transporting property in organic electronics. Low-cost, easy synthesis and high thermal-stability PMA is promising solution-processed hole-transporting material for high efficiency organic solar cells (OSCs). We have studied the degradation mechanism of phosphomolybdic acid in methanol solution that was stored for days, and further investigated its effect on the performance of OSC devices. We found that PMA had been slowly reduced to phosphomolybdic heteropoly blue during the solution storage process. Besides the morphology of the PMA film, its energy level and molybdenum valence which changed with solution storage time were also investigated. The instability of PMA in methanol solution resulted in a significant negative effect on the device performance. Comparing to the PM6:Y6 device based on PMA from pristine solution, the power conversion efficiencies of OSCs with PMA hole transporting layer prepared from solution stored for 8 days and 16 days decreased from 14.69% to 3.01% and 0.58%, respectively. Fortunately, using other stable processing solvent systems instead of methanol for the fabrication of the PMA hole transporting layer has been found as an efficient method to avoid the degration of the device performance. © 2023, The Authors. All rights reserved.

关键词： Stability

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Monolithically Integrated Temperature Sensor Based on p-GaN/AlGaN/GaN Heterostructure

Monolithically Integrated Temperature Sensor Based on p-GaN/...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Qingxin Liu Kailin Ren Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

A monolithically integrated temperature sensor circuit based on a p-GaN/AlGaN/GaN heterojunction is proposed. The sensor comprises two parts: the first part is a temperature-sensitive voltage source formed by a two-dimensional electron gas (2DEG) resistor and a schottky barrier diode (SBD) in series, and the second part is a resistor-transistor logic (RTL) inverter formed by a 2DEG resistor and a p-GaN high electron mobility transistor (HEMT) in series. The output voltage of the temperature-sensitive voltage source is connected to the gate of the p-GaN HEMT in the second part, providing the gate voltage. According to data obtained from TCAD simulation results, the output voltage of the temperature-sensitive voltage source exhibits positive temperature dependence. The output voltage of the RTL inverter exhibits a negative temperature dependence. When the temperature sensor is properly biased, the voltage division between the SBD and the 2DEG resistor in the temperature-sensitive voltage source reallocates as the temperature rises, causing the gate voltage of the connected RTL inverter to increase. This increasement enhances the temperature-induced variation in the RTL inverter's output voltage, increasing the sensitivity of the temperature sensing circuit from 4 mV/K with a fixed gate voltage to 14 mV/K. This simulation demonstrates a compact monolithic integration sensor for monitoring the on-chip temperature of GaN power integrated circuits for protection and control.

关键词： Temperature sensors Resistors Temperature dependence Sensitivity HEMTs Logic gates Thermal management Inverters system-on-chip MODFETs

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Thermodynamic Analysis of Multi-Stage Thermal Compression Bonding for Fabricating Vertically Stacked Micro-Led Array

Thermodynamic Analysis of Multi-Stage Thermal Compression Bo...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Lianyu Wang Kailin Ren Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

Vertical full-color Micro-LEDs based on flip-chip bonding technology are of great significance in high-resolution display applications, as they have many advantages such as high pixel density, high brightness, and wide color gamut. However, the construction of vertical full-color Micro-LEDs requires multiple thermal compression bonding (TCB). Therefore, thermal stress analysis during multiple TCB is necessary. In this work, the surface thermal stress of a 5×5 vertical Micro-LED array during multi-stage TCB is studied by finite element method (FEM) simulations. The stresses at LED-LED bonding interface and stacked LED-backplane bonding interface as well as the interactions between the two bondings are investigated. The results of different bonding temperatures, material combinations, and interconnected metal diameters and depths on the mean stresses at the bonding interface are analyzed, and then the adequacy of bonding and risk of debonding are assessed. The results show that among the hybrid bonding material combinations set in the simulation, the Cu/ Al 2 O 3 has the largest interfacial stress. In addition, decreasing the interconnected metal diameter and lowering the bonding temperature can relieve the interfacial stress, while the interconnected metal depth has no significant effect on the bonding stress. The key advantage of this work is that it can help establish design and process guidelines to shorten the development cycle of vertical full-color Micro-LEDs based on flip-chip bonding technology.

关键词： Thermodynamics Photonic band gap Metals Thermal analysis Finite element analysis Flip-chip devices Bonding Stress Thermal stresses Guidelines

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Thermodynamic simulation of 6×6 Micro-LED array in flip-chip bonding

Thermodynamic simulation of 6×6 Micro-LED array in flip-chi...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Haojie Zhou Xiaoxiao Ji Luqiao Yin Jianhua Zhang School of Materials Science and Engineering Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China School of Mechatronics and Automation Shanghai University Shanghai China School of Microelectronics Shanghai University Shanghai China

In this paper, we first simulated the influence of different diameters, heights and shapes on the In bumps by ANSYS simulation software. The results show that the changes of these conditions affect the deformation and stress of the In bumps to varying degrees. The height of the bumps has the least effect on the stress, while the diameter and shape of the bumps have a great effect on the deformation as well as stress. Finally, a sapphire based Mirco-LED array with a pixel pitch size of 7.5 μm was used to bond with silicon substrates with In bumps of different heights, and turn it on with electricity. We found that the In bumps height does affect the yield of Micro-LED, and the best yield in the experiment is > 90%. This study provides a theoretical basis for reducing the deformation and stress of In bumps during flip-chip bonding, and an experimental basis for improving bond yield and device performance.

关键词： Thermodynamics Deformation Shape Simulation Software Silicon Flip-chip devices

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Hybrid bonding thermodynamic simulation of 3×3 array of Micro-LED fabricated based on flip-chip bonding

Hybrid bonding thermodynamic simulation of 3×3 array of Mic...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Jianxin Li Haojie Zhou Xiaoxiao Ji Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China School of Materials Science and Engineering Shanghai University Shanghai China School of Mechatronic Engineering and Automation Shanghai University Shanghai China

In this paper, ANSYS was used to perform a hybrid bonding thermodynamic simulation of Micro-LED fabricated based on flip-chip *** simulated the effects of different ILDs (interlayer dielectrics) and different diameters of In bumps on the mean stress of the bonding surface. The results show that filling BCB (Benzo cyclobutene)/PI (Polyimide)/SiO 2 can significantly reduce the mean stress on the In bumps bonding area, among which, filling BCB/PI is better than filling SiO 2 . And when the diameter of the In bumps is 5 μm, the mean stress on the In bumps bonding area is lowest. For the mean stress on the bonding area of the ILDs, filling BCB/PI is also much better than filling SiO 2 . Changing the diameter of the In bumps has little effect on the mean stress of the ILDs bonding area filled with BCB/PI. As for the bonding area of the ILDs filled with SiO 2 , the mean stress increases as the diameter of the In bumps increases. This paper uses simulation experiments to study the mean stress on different bonding areas during the hybrid bonding process of preparing Micro-LED, which provides a theoretical basis for improving the bonding strength and yield of Micro-LED, and provides ideas for realizing the industrialization of Micro- LED.

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Transient Thermodynamic Simulation of Micro LED Array Bonding

Transient Thermodynamic Simulation of Micro LED Array Bondin...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Jinwen Pan Haojie Zhou Xiaoxiao Ji Liang Chen Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China School of Materials Science and Engineering Shanghai University Shanghai China School of Mechatronic Engineering and Automation Shanghai University Shanghai China

Micro LED display technology is considered to be the next generation of display technology and finds widespread applications in displays and visible light communication. key cooperation plays a crucial role in achieving electrical interconnections for Micro LED, which significantly impact their luminous quality and reliability. This study aims to analyze the stress-strain evolution during the bonding process of Micro LED arrays with cylindrical and spherical In bumps using COMSOL. The results demonstrate that the displacement of the bumps after bonding decreases by up to 97% compared to the displacement observed during the temperature-holding phase. Furthermore, the stresses during the temperature rise and fall stages approximately exhibit a linear relationship with temperature, and residual stresses exist after bonding. Additionally, residual stresses remain present after bonding. This study provides theoretical guidance for optimizing the bonding process of Micro LED and further exploration for the commercialization of Micro LED.

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P-15.30: Thermally Activated Delayed Fluorescent Host for Highly Efficient Deep-Red OLEDs

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SID Symposium Digest of Technical Papers 2024年第S1期55卷 1524-1524页

作者： Panpan Zang Youjun Wu Zhen Zhang Peng Wu Zixing Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Yanchang 149 Shanghai China 200072

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37-2:Invited Paper:Intermolecular Charge Transfer for High-Performance Organic Light-Emitting Diodes

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SID Symposium Digest of Technical Papers 2024年第S1期55卷 312-312页

作者： Zhen Zhang Zixing Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Yanchang 149 Shanghai China 200072

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