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Low thermal conductivity and promising thermoelectric performance induced by resonant bonding in a two-dimensional lead-tin-selenide ordered alloy

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Physical Review Applied 2024年第5期22卷 054013页

作者： Zhongwei Zhang Cuiqian Yu Shuang Lu Sebastian Volz Jie Chen Center for Phononics and Thermal Energy Science China–EU Joint Lab for Nanophononics MOE Key Laboratory of Advanced Micro-structured Materials School of Physics Science and Engineering Laboratory for Integrated Micro and Mechatronic Systems CNRS-IIS UMI 2820

Resonant bonding, arising from an unsaturated electronic occupation configuration, has been demonstrated as a crucial signature for intrinsically low lattice thermal conductivity (κl), which offers a promising avenue for achieving high-performance thermoelectric materials. Using density-functional theory combined with Boltzmann transport equation calculations, we demonstrate the significant impact of resonant bonding on the thermal transport properties of a two-dimensional lead-tin-selenide ordered alloy, namely (Pb0.5Sn0.5)Se. Our findings demonstrate that resonant bonding induces interactions that extend beyond the typical covalent bonding range, i.e., resonant interaction, as evidenced by the perturbed electron density distribution, the nonvanishing trace of interaction force constants over long distances, and the large convergent cutoff radius observed in thermal conductivity calculations. Consequently, the resonant interactions lead to enhanced phonon-scattering events and strong anharmonicity, resulting in an ultralow κl around 1Wm−1K−1 at 300 K. More interestingly, an excellent thermoelectric performance is observed in two-dimensional (Pb0.5Sn0.5)Se, with a remarkably high ZT value around 3 at 800 K. This study highlights the underlying relation between the electronic bonding and thermal transport property, providing valuable insights for the design of high-efficiency thermoelectric materials.

关键词： Chemical bonding Lattice thermal conductivity 2-dimensional systems Alloys Semiconductor compounds Thermoelectrics Boltzmann theory Density functional calculations

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Hollow Gradient-Structured Iron-Anchored Carbon Nanospheres for Enhanced Electromagnetic Wave Absorption

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Nano-micro Letters 2023年第1期15卷 144-160页

作者： Cao Wu Jing Wang Xiaohang Zhang Lixing Kang Xun Cao Yongyi Zhang Yutao Niu Yingying Yu Huili Fu Zongjie Shen Kunjie Wu Zhenzhong Yong Jingyun Zou Bin Wang Zhou Chen Zhengpeng Yang Qingwen Li Key Laboratory of Multifunctional Nanomaterials and Smart Systems Advanced Materials DivisionSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123JiangsuPeople’s Republic of China School of Science Nanchang Institute of TechnologyNanchang 330099JiangxiPeople’s Republic of China Division of Nanomaterials and Jiangxi Key Lab of Carbonene Materials Jiangxi Institute of NanotechnologyNanchang 330200JiangxiPeople’s Republic of China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026AnhuiPeople’s Republic of China School of Materials Science and Engineering Nanyang Technological University50 Nanyang AvenueSingapore 639798Singapore Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application School of Physical Science and TechnologySuzhou University of Science and TechnologySuzhou 215009People’s Republic of China School of Mechanical and Power Engineering Nanjing Tech UniversityNanjing 211800People’s Republic of China Henan Key Laboratory of Materials On Deep-Earth Engineering School of Materials Science and EngineeringHenan Polytechnic UniversityJiaozuo 454003People’s Republic of China College of Safety Science and Engineering Xi’an University of Science and TechnologyXi’an 710054People’s Republic of China

In the present paper,a microwave absorber with nanoscale gradient structure was proposed for enhancing the electromagnetic absorption *** inorganic-organic competitive coating strategy was employed,which can effectively adjust the thermodynamic and kinetic reactions of iron ions during the solvothermal *** a result,Fe nanoparticles can be gradually decreased from the inner side to the surface across the hollow carbon *** results reveal that it offers an outstanding reflection loss value in combination with broadband wave absorption and flexible adjustment ability,which is superior to other relative graded distribution structures and satisfied with the requirements of lightweight *** addition,this work elucidates the intrinsic microwave regulation mechanism of the multiscale hybrid electromagnetic wave *** excellent impedance matching and moderate dielectric parameters are exhibited to be the dominative factors for the promotion of microwave absorption performance of the optimized *** strategy to prepare gradient-distributed microwave absorbing materials initiates a new way for designing and fabricating wave absorber with excellent impedance matching property in practical applications.

关键词： Gradient structures Carbon nanospheres Electromagnetic wave absorption Impedance matching

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Two-dimensional materials for future information technology: status and prospects

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science China(Information sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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Ultra-compact beam steering nanolasers

arXiv

引用

arXiv 2024年

作者： Chen, Xinghong Gu, Mingxuan Tang, Jiankai Sang, Yungang Xiang, Bingrui Zhang, Kong Zhang, Guanjie Wang, Xingyuan Guo, Xuhan Zhou, Linjie Wu, Wengang Mao, Yifei School of Sensing Science and Engineering School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai200240 China SJTU-Pinghu Institute of Intelligent Optoelectronics Pinghu314200 China Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China College of Mathematics and Physics Beijing University of Chemical Technology Beijing100029 China State Key Laboratory of Advanced Optical Communication Systems and Networks Department of Electronic Engineering Shanghai Jiao Tong University Shanghai200240 China State Key Laboratory of Advanced Optical Communication Systems and Networks Shanghai Key Lab of Navigation and Location Services Shanghai Institute for Advanced Communication and Data Science Department of Electronic Engineering Shanghai Jiao Tong University Shanghai200240 China National Key Laboratory of Science and Technology on Micro/Nano Fabrication School of Integrated Circuits Peking University Beijing100871 China Beijing Advanced Innovation Center for Integrated Circuits Beijing100871 China Frontiers Science Center for Nano-optoelectronics Peking University Beijing100871 China

The miniaturization and integration of beam steering devices have consistently been the focus of the field. Conventional methods alter the eigenmode of the optical cavity by regulating the refractive index. Due to the weak nonlinear effect of the optical system, the device must be sufficiently large to achieve sufficient light modulation. The effective method for miniaturizing beam steering devices currently in use is based on metasurfaces. However, this type of device necessitates the input of a laser source, which precludes the simultaneous generation and control of light in a single device. Here we propose a miniaturized beam steering device that employs mode selection between different bound states in the continuum (BIC) states through phase change material. The device is capable of simultaneously achieving both light generation and beam steering (33°) in a single device with a size of only 25 μm and with a low threshold of 8.9 kW cm-2. Furthermore, it is possible to achieve a significant degree of dynamic wavelength tunability, with a range extending up to 296 nm. This method achieves high-efficient regulation of light properties by dynamically controlling the system’s topological charge, circumventing the problem of weak nonlinearity in traditional methods. Furthermore, the integration of phase change materials with nanolasers enables the direct alteration of lasing properties, which provides a novel idea for dynamic light control. The device process scheme based on phase change materials is straightforward, direct, and highly compatible, which will be advantageous for its intended application. Copyright © 2024, The Authors. All rights reserved.

关键词： Phase change materials

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Technology Roadmap for Flexible Sensors

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ACS NANO 2023年第6期17卷 5211-5295页

作者： Luo, Yifei Abidian, Mohammad Reza Ahn, Jong-Hyun Akinwande, Deji Andrews, Anne M. Antonietti, Markus Bao, Zhenan Berggren, Magnus Berkey, Christopher A. Bettinger, Christopher John Chen, Jun Chen, Peng Cheng, Wenlong Cheng, Xu Choi, Seon-Jin Chortos, Alex Dagdeviren, Canan Dauskardt, Reinhold H. Di, Chong-an Dickey, Michael D. Duan, Xiangfeng Facchetti, Antonio Fan, Zhiyong Fang, Yin Feng, Jianyou Feng, Xue Gao, Huajian Gao, Wei Gong, Xiwen Guo, Chuan Fei Guo, Xiaojun Hartel, Martin C. He, Zihan Ho, John S. Hu, Youfan Huang, Qiyao Huang, Yu Huo, Fengwei Hussain, Muhammad M. Javey, Ali Jeong, Unyong Jiang, Chen Jiang, Xingyu Kang, Jiheong Karnaushenko, Daniil Khademhosseini, Ali Kim, Dae-Hyeong Kim, Il-Doo Kireev, Dmitry Kong, Lingxuan Lee, Chengkuo Lee, Nae-Eung Lee, Pooi See Lee, Tae-Woo Li, Fengyu Li, Jinxing Liang, Cuiyuan Lim, Chwee Teck Lin, Yuanjing Lipomi, Darren J. Liu, Jia Liu, Kai Liu, Nan Liu, Ren Liu, Yuxin Liu, Yuxuan Liu, Zhiyuan Liu, Zhuangjian Loh, Xian Jun Lu, Nanshu Lv, Zhisheng Magdassi, Shlomo Malliaras, George G. Matsuhisa, Naoji Nathan, Arokia Niu, Simiao Pan, Jieming Pang, Changhyun Pei, Qibing Peng, Huisheng Qi, Dianpeng Ren, Huaying Rogers, John A. Rowe, Aaron Schmidt, Oliver G. Sekitani, Tsuyoshi Seo, Dae-Gyo Shen, Guozhen Sheng, Xing Shi, Qiongfeng Someya, Takao Song, Yanlin Stavrinidou, Eleni Su, Meng Sun, Xuemei Takei, Kuniharu Tao, Xiao-Ming Tee, Benjamin C. K. Thean, Aaron Voon-Yew Trung, Tran Quang Wan, Changjin Wang, Huiliang Wang, Joseph Wang, Ming Wang, Sihong Wang, Ting Wang, Zhong Lin Weiss, Paul S. Wen, Hanqi Xu, Sheng Xu, Tailin Yan, Hongping Yan, Xuzhou Yang, Hui Yang, Le Yang, Shuaijian Yin, Lan Yu, Cunjiang Yu, Guihua Yu, Jing Yu, Shu-Hong Yu, Xinge Zamburg, Evgeny Zhang, Haixia Zhang, Xiangyu Zhang, Xiaosheng Zhang, Xueji Zhang, Yihui Zhang, Yu Zhao, Siyuan Zhao, Xuanhe Zheng, Yuanjin Zheng, Yu-Qing Zheng, Zijian Zhou, Tao Zhu, Bowen Zhu, Ming Zhu, Rong Zhu, Yangzhi Zhu, Yong Zou, Guijin Chen, Xiaodong 08-03 Innovis Singapore 138634 Republic of Singapore Innovative Centre for Flexible Devices (iFLEX) School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore Department of Biomedical Engineering University of Houston Houston Texas 77024 United States School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 United States Microelectronics Research Center The University of Texas at Austin Austin Texas 78758 United States Department of Chemistry and Biochemistry California NanoSystems Institute and Department of Psychiatry and Biobehavioral Sciences Semel Institute for Neuroscience and Human Behavior and Hatos Center for Neuropharmacology University of California Los Angeles Los Angeles California 90095 United States Colloid Chemistry Department Max Planck Institute of Colloids and Interfaces 14476 Potsdam Germany Department of Chemical Engineering Stanford University Stanford California 94305 United States Laboratory of Organic Electronics Department of Science and Technology Campus Norrköping Linköping University 83 Linköping Sweden Wallenberg Initiative Materials Science for Sustainability (WISE) and Wallenberg Wood Science Center (WWSC) SE-100 44 Stockholm Sweden Department of Materials Science and Engineering Stanford University Stanford California 94301 United States Department of Biomedical Engineering and Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 United States Department of Bioengineering University of California Los Angeles Los Angeles California 90095 United States School of Chemistry Chemical Engineering and Biotechnology Nanyang Technological University Singapore 637457 Singapore Nanobionics Group Department of Chemical and Biological Engineering Monash University Clayton Australia 3800 Monash

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze continued...challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative

关键词： soft materials mechanics engineering flexible electronics conformable sensors bioelectronics human-machine interfaces body area sensor networks technology translation sustainable electronics

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Highly efficient nonuniform finite difference method for three-dimensional electrically stimulated liquid crystal photonic devices

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Photonics Research 2024年第4期12卷 865-875页

作者： ZHENGHAO GUO MENGJUN LIU ZIJIA CHEN RUIZHI YANG PEIYUN LI HAIXIA DA DONG YUAN GUOFU ZHOU LINGLING SHUI HUAPENG YE Guangdong Provincial Key Laboratory of Optical Information Materials and Technology&Institute of Electronic Paper Displays South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China SCNU-TUE Joint Lab of Device Integrated Responsive Materials(DIRM) National Center for International Research on Green OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices School of Information and Optoelectronic Science and EngineeringSouth China Normal UniversityGuangzhou 510006China Joint Laboratory of Optofluidic Technology and Systems National Center for International Research on Green OptoelectronicsSouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China College of Electronic and Optical Engineering&College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province Nanjing 210023China

Liquid crystal(LC)photonic devices have attracted intensive attention in recent decades,due to the merits of tunability,cost-effectiveness,and high ***,the precise and efficient simulation of large-scale three-dimensional electrically stimulated LC photonic devices remains challenging and resource *** we report a straightforward nonuniform finite difference method(NFDM)for efficiently simulating largescale LC photonic devices by employing a spatially nonuniform mesh grid.

关键词： nonuniform crystal finite

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Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges

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science China(Information sciences) 2025年第06期 118-173页

作者： Xiao YU Ni ZHONG Yan CHENG Tianjiao XIN Qing LUO Tiancheng GONG Jiezhi CHEN Jixuan WU Ran CHENG Zhiyuan FU Kechao TANG Jin LUO Tianling REN Fei XUE Lin CHEN Tianyu WANG Xueqing LI Xiuyan LI Ping WANG Xinqiang WANG Jie SUN Anquan JIANG Peiyuan DU Bing CHEN Chengji JIN Jiajia CHEN Haoji QIAN Wei MAO Siying ZHENG Huan LIU Haiwen XU Can LIU Zhihao SHEN Xiaoxi LI Bochang LI Zheng-Dong LUO Jiuren ZHOU Yan LIU Yue HAO Genquan HAN Hangzhou Institute of Technology Xidian University Faculty of Integrated Circuits Xidian University Key Laboratory of Polar Materials and Devices(MOE) Department of Electronics East China Normal University State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences School of Information Science and Engineering Shandong University College of Integrated Circuit Zhejiang University School of Integrated Circuits Southeast University School of Integrated Circuits Peking University School of Integrated Circuits Tsinghua University Center for Quantum Matter School of Physics Zhejiang University School of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Department of Electronic Engineering Tsinghua University National Key Laboratory of Micro and Nano Fabrication Technology and the Department of Micro-Nano Electronics Shanghai Jiao Tong University State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics School of Physics Peking University Hangzhou Huarui Chip Innovation Technology Co. Ltd.

Hafnium（Hf） oxide-based ferroelectric materials have emerged as a transformative platform for next-generation non-volatile memory and advanced computing technologies. This review comprehensively examines the development, challenges, and applications of HfO2ferroelectrics, emphasizing their CMOS compatibility, scalability, and robust polarization at nanoscale dimensions. Breakthroughs in doping strategies, stress engineering, and VO control have stabilized the metastable orthorhombic phase, enabling high-performance devices such as ferroelectric RAM（FeRAM）, ferroelectric field-effect transistors（FeFETs）, and ferroelectric tunnel junctions（FTJs）. These devices offer ultrafast switching, low power consumption, and multi-level storage, driving innovations in neuromorphic computing, in-memory processing, and cryogenic systems; nonetheless, they face ongoing challenges in reliability, such as fatigue and imprint effects, and scalability at sub-5 nm technology nodes. Emerging frontiers, such as wurtzite-structured nitrides（e.g., AlScN） and antiferroelectric ZrO2-based systems, have garnered significant attention due to their exceptionally high remanent polarization and promising potential for enhanced endurance, respectively. Further addressing the reliability issues of these emerging ferroelectric materials and the challenges associated with large-scale integration processes through interdisciplinary efforts will unlock the full potential of ferroelectric technologies, positioning them as pivotal enablers of post-Moore computing architectures and sustainable AI-driven applications.

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Room-temperature waveguide integrated quantum register in a semiconductor photonic platform

arXiv

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arXiv 2023年

作者： Hu, Haibo Zhou, Yu Yi, Ailun Bao, Tongyuan Liu, Chengying Luo, Qi Zhang, Yao Wang, Zi Li, Qiang Lu, Dawei Liu, Zhengtong Xiao, Shumin Ou, Xin Song, Qinghai Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems Harbin Institute of Technology Shenzhen518055 China Pengcheng Laboratory Shenzhen518055 China Shenzhen518045 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China The Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing100049 China Institute of Advanced Semiconductors Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang Hangzhou311200 China State Key Laboratory of Silicon Materials and Advanced Semiconductors School of Materials Science and Engineering Zhejiang University Hangzhou310027 China Shenzhen Institute for Quantum Science and Engineering Department of Physics Southern University of Science and Technology Shenzhen518055 China Collaborative Innovation Center of Extreme Optics Shanxi University Shanxi Taiyuan030006 China

Quantum photonic integrated circuits are reshaping quantum networks and sensing by providing compact, efficient platforms for practical quantum applications. Despite continuous breakthroughs, integrating entangled registers into photonic devices on a CMOS-compatible platform presents significant challenges. Herein, we present single electron-nuclear spin entanglement and its integration into a silicon-carbide-on-insulator (SiCOI) waveguide. We demonstrate the successful generation of single divacancy electron spins and near-unity spin initialization of single 13C nuclear spins. Both single nuclear and electron spin can be coherently controlled and a maximally entangled state with a fidelity of 0.89 has been prepared under ambient conditions. Based on the nanoscale positioning techniques, the entangled quantum register has been further integrated into SiC photonic waveguides for the first time. We find that the intrinsic optical and spin characteristics of the register are well preserved and the fidelity of the entangled state remains as high as 0.88. Our findings highlight the promising prospects of the SiCOI platform as a compelling candidate for future scalable quantum photonic applications. Copyright © 2023, The Authors. All rights reserved.

关键词： Silicon on insulator technology

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Are We Building on the Rock? On the Importance of Data Preprocessing for Code Summarization

arXiv

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arXiv 2022年

作者： Shi, Lin Mu, Fangwen Chen, Xiao Wang, Song Wang, Junjie Yang, Ye Li, Ge Xia, Xin Wang, Qing Institute of Software Chinese Academy of Sciences Beijing China Lassonde School of Engineering York University Toronto Canada School of Systems and Enterprises Stevens Institute of Technology HobokenNJ United States Key Lab of High Confidence Software Technology Peking University Beijing China Software Engineering Application Technology Lab Huawei China Laboratory for Internet Software Technologies Institute of Software CAS China University of Chinese Academy of Sciences China Science & Technology on Integrated Information System Laboratory Institute of Software CAS China

Code summarization, the task of generating useful comments given the code, has long been of interest. Most of the existing code summarization models are trained and validated on widely-used code comment benchmark datasets. However, little is known about the quality of the benchmark datasets built from real-world projects. Are the benchmark datasets as good as expected? To bridge the gap, we conduct a systematic research to assess and improve the quality of four benchmark datasets widely used for code summarization tasks. First, we propose an automated code-comment cleaning tool that can accurately detect noisy data caused by inappropriate data preprocessing operations from existing benchmark datasets. Then, we apply the tool to further assess the data quality of the four benchmark datasets, based on the detected noises. Finally, we conduct comparative experiments to investigate the impact of noisy data on the performance of code summarization models. The results show that these data preprocessing noises widely exist in all four benchmark datasets, and removing these noisy data leads to a significant improvement on the performance of code summarization. We believe that the findings and insights will enable a better understanding of data quality in code summarization tasks, and pave the way for relevant research and practice. Copyright © 2022, The Authors. All rights reserved.

关键词： Benchmarking

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Localization of chiral edge states by the non-Hermitian skin effect

arXiv

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arXiv 2023年

作者： Liu, Gui-Geng Mandal, Subhaskar Zhou, Peiheng Xi, Xiang Banerjee, Rimi Hu, Yuan-Hang Wei, Minggui Wang, Maoren Wang, Qiang Gao, Zhen Chen, Hongsheng Yang, Yihao Chong, Yidong Zhang, Baile Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University 21 Nanyang Link Singapore637371 Singapore National Engineering Research Center of Electromagnetic Radiation Control Materials State Key Laboratory of Electronic Thin Film and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China Department of Electrical and Electronic Engineering Southern University of Science and Technology Shenzhen518055 China School of Physics Collaborative Innovation Center of Advanced Microstructures Nanjing University Jiangsu Nanjing210093 China Interdisciplinary Center for Quantum Information State Key Laboratory of Modern Optical Instrumentation ZJU-Hangzhou Global Science and Technology Innovation Center College of Information Science and Electronic Engineering Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang ZJU-UIUC Institute Zhejiang University Hangzhou310027 China Centre for Disruptive Photonic Technologies The Photonics Institute Nanyang Technological University 50 Nanyang Avenue Singapore639798 Singapore

Quantum Hall systems host chiral edge states extending along the one-dimensional boundary of any two-dimensional sample. In solid state materials, the edge states serve as perfectly robust transport channels that produce a quantised Hall conductance;due to their chirality, and the topological protection by the Chern number of the bulk bandstructure, they cannot be spatially localized by defects or disorder. Here, we show experimentally that the chiral edge states of a lossy quantum Hall system can be localized. In a gyromagnetic photonic crystal exhibiting the quantum Hall topological phase, an appropriately structured loss configuration imparts the edge states’ complex energy spectrum with a feature known as point-gap winding. This intrinsically non-Hermitian topological invariant is distinct from the Chern number invariant of the bulk (which remains intact) and induces mode localization via the "non-Hermitian skin effect". The interplay of the two topological phenomena – the Chern number and point-gap winding – gives rise to a non-Hermitian generalisation of the paradigmatic Chern-type bulk-boundary correspondence principle. Compared to previous realisations of the non-Hermitian skin effect, the skin modes in this system have superior robustness against local defects and disorders. Copyright © 2023, The Authors. All rights reserved.

关键词： Topology

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