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International Conference on Computer Application and system Modeling

作者： Cai, Ben-Xiao Li, Xun-Gen Dong, Ling-Xi School of Electrical Engineering Zhejiang University Hangzhou 310027 China Ministry of Education Key Lab of RF Circuit and System Hangzhou 310018 China

ISBN: (纸本)9781424472369

A slotted SIW dual-polarization array antenna is realized in a single-layer structure. Two feed waveguides adjacent each other attached at both ends of cross-slotted radiating SIW excite the leaky waves propagating in opposite directions. Each of them radiates either of two circularly polarized waves in symmetrical beam directions. Balanced design of two beams for each polarization imposes symmetry in the array design of slots. © 2010 IEEE.

关键词： Slot antennas

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A broadband Doherty power amplifier based on the two-port networks method

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IEICE Electronics Express 2021年第18期16卷 1-5页

作者： Zhang, Zhiwei Cheng, Zhiqun Zhang, Zhendong Liu, Guohua Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou310018 China

This paper proposes a simple method for designing a broadband Doherty power amplifier. The two-port network is used to represent the output matching networks and load modulation networks. Then, the relationships between the parameters of the two-port network and the output impedances of the transistors and the impedances of the power amplifier branches at the combiner are derived. The output matching network and the load modulation network are designed based on the parameters of the two-port network. A broadband Doherty power amplifier is designed and fabricated to verify the effectiveness of the proposed method. The measured results show that the saturated output power is 43.5-45 dBm and the saturated drain efficiency is 65-75% in 2.1-2.7 GHz. And the drain efficiency is greater than 40% at the 6 dB power back-off in the same frequency band. And the gain is above 12 dB. Copyright © 2019 The Institute of Electronics, Information and Communication Engineers

关键词： Efficiency

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A Dual-Polarized Patch Antenna With Electric and Magnetic Coupling Feed for 5G Base Stations

A Dual-Polarized Patch Antenna With Electric and Magnetic Co...

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International Conference on Integrated circuits and Microsystems (ICICM)

作者： Weiwei Zhou Zhiqun Cheng Y. Jay Guo Key Lab. of RF Circuit and System Hangzhou Dianzi University HangZhou China

The following topics are dealt with: integrated circuit design; low-power electronics; CMOS integrated circuits; CMOS analogue integrated circuits; operational amplifiers; system-on-chip; field programmable gate array... 详细信息

ISBN: (数字)9781728189789

ISBN: (纸本)9781728189796

关键词： Dipole antennas Antennas Antenna feeds Broadband antennas Base stations Patch antennas Wireless communication

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Circularly polarized antenna based on dual-mode circular SIW cavity

Circularly polarized antenna based on dual-mode circular SIW...

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2008 International Conference on Microwave and Millimeter Wave Technology, ICMMT

作者： Guo, Qing Luo Ling, Ling Sun Key Lab. of RF Circuits and System of Ministry of Education Microelectronic CAD Center Hangzhou Dianzi University Hangzhou 310018 China

This paper describes design method of a novel circularly polarized antenna backed by low profile circular SIW cavity. The proposed antenna provides high circularly polarized radiation performance. It can be seamlessly... 详细信息

ISBN: (纸本)9781424418794

关键词： Polychlorinated biphenyls

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High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1.8W Output Power

High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1....

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International Conference on Integrated circuits and Microsystems (ICICM)

作者： Peng Xu Zhiqun Cheng ZhiWei Zhang MingWen Meng Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China

ISBN: (数字)9781728189789

ISBN: (纸本)9781728189796

This paper presented a four-stage E-band power amplifier monolithic microwave integrated circuits(MMIC) based on GaN high-electron-mobility transistor(HEMT) with 60nm of gate length. The layout of the proposed circuit shows that the small-signal gain of 21-23dB and power added efficiency(PAE) of 25.5%-27.5% in the E-band low frequency (71-76GHz). The saturated output power of greater than 32.6dBm(1.8W) is achieved with the power gain of more than 12.6 dB and the linear power gain of more than 20dB. The power density of around 1.4W/mm is achieved at the final stage.

关键词： Power amplifiers HEMTs Gallium nitride Gain Power generation Logic gates Radio frequency

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An ultra-wideband power amplifier based on GaN HEMT

An ultra-wideband power amplifier based on GaN HEMT

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International Conference on Communication Technology (ICCT)

作者： Dandan Zhu Zhiqun Cheng Guoguo Yan Shuai Chen Kai Wang Kaikai Fan Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781467370066

The design, fabrication and measurements of an ultra-broadband power amplifier based on GaN HEMT technology which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper. A TGF2023-2-02 GaN HEMT chip from TriQuint is adopted. The amplifier is designed by using a frequency compensation and multi impedance broadband matching approach for both input and output networks. And a sector micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 11 dB power gain over 3-8 GHz. The saturated output power is 37.3 dBm under DC bias of Vds=28 V, Vgs=-2.53 V at the frequency of 5 GHz.

关键词： HEMTs Gallium nitride Gallium arsenide Electric potential Load modeling Dielectrics Substrates

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A transimpedance amplifier with DC photocurrent rejection for infrared optical receiver

A transimpedance amplifier with DC photocurrent rejection fo...

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International Conference on Communication Technology (ICCT)

作者： Xiaofei Kuang Fuxuan Fan Ting Wang Ministry of Education Key Lab. of RF Circuit and System Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781467370066

For CMOS process infrared receiver chip. This paper mainly studies the suppression of the infrared receiver noise, and presents a circuit design which can convert photo-generated current to voltage. Through the design, infrared receiver chip not only can accurately detect tens of nA to hundreds of μ A current, but also can effectively avoid amplifier's saturation distortion when large current occurs. Use Cadence simulation tools for functional simulation. Finally, the results show that when operating voltage is 3 V, the circuit has a well supression for 10 nA to 290 μ A DC photocurrent and the gain obtained with 46 dB with a good stability. The noise is 3.41 nV/√Hz, and the power consumption is 9.6mW. The chip can achieve a high sensitivity, strong anti-interference ability of the design requirements . In the photoelectric conversion section, we specially designed DC noise suppression and compensation circuit to filter out most of the DC signal component from the input signal, and further improve the system's sensitivity of the input signal.

关键词： Radio frequency

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The design of low noise chopper operational amplifier with inverter

The design of low noise chopper operational amplifier with i...

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International Conference on Communication Technology (ICCT)

作者： Xiaofei Kuang Ting Wang Fuxuan Fan Ministry of Education Key Lab. of RF Circuit System Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781467370066

The input offset voltage is a quit important performance parameter for operational amplifiers, and the low frequency 1/f noise has a great effect on the offset voltage. In this paper, chopping technology which is an efficient approach to decrease the 1/f noise and offset voltage of CMOS amplifiers is adopted. In the low pass filter, the multiplier composed of R and C is used to filter out the modulation noise. The circuit of the presented chopper amplifier is designed and simulated with 45nm CMOS process and a 1V supply. Simulated results show that the total harmonic distortion of chopper amplifier is 54.1dB and the chopper frequency is 10 kHz. The input referred noise is 2.54 nV / √Hz @1kHz, and the average power consumption is 65.5μW. The proposed technology has a pleasurable preference.

关键词： Chopper amplifier Low pass filter Offset voltage Chopping technology offset voltage Low pass filters chopping frequency Chopper amplifiers Inventors CMOS amplifier NOISE MODULATION Input Offset Voltage Band-pass filters high-pass filters characteristic parameter Operational amplifiers Total harmonic distortion

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Improved Combiner Design for Broadband Outphasing Power Amplifier

Improved Combiner Design for Broadband Outphasing Power Ampl...

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International Conference on Integrated circuits and Microsystems (ICICM)

作者： MingWen Meng Zhiqun Cheng Peng Xu Guohua Liu Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China

ISBN: (数字)9781728189789

ISBN: (纸本)9781728189796

In this paper, an outphasing power amplifier(PA) with novel combiner is proposed. By replacing quarter wavelength impedance in classic structure with series microstrip lines with stop-band suppression, the proposed circuit achieved wide bandwidth while ensuring acceptable efficiency and linearity. Analytical and ADS simulation are presented in this work, an outphasing PA operating at center frequency 3.1GHz with 200MHz bandwidth is realized. The simulated results show excellent agreement in all cases considered.

关键词： Linearity Bandwidth Microstrip Power transmission lines Impedance Broadband amplifiers Power amplifiers

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The design of a reconfigurable successive approximation analog to digital converter for biomedical applications

The design of a reconfigurable successive approximation anal...

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International Conference on Communication Technology (ICCT)

作者： Xiaofei Kuang Xianli Fang Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781467370066

In a biomedical signal processing system, ADC is an important circuit that successively converts analog biomedical signals into digital data for next analysis and processing. However, the ADC operates continuously. The power consumption is a very important factor in ADC circuit design. This brief present a 10 bits and 8 bits reconfigurable SAR ADC with a sampling rate of 20KS/s for implantable devices. It adopt Single-ended split-array capacitive DAC to reduce Power consumption and area. The digital parts of SAR ADC operate at 0.5V. The analog parts operate at 1V and 0.6V in 10bits mode and 8bits mode, respectively. The power consumptions are 1.354μW and 152.28nW. DNL are -9m~0.22LSB and -0.02~0.21LSB. INL are -0.2~0.58LSB and -0.25~0.25LSB. ENOB are 9.1 and 7.7, respectively. The ADC achieves the FOM of 123.37fJ/conversion-step and 36.55fJ/conversion-step, respectively.

关键词： Switches Clocks Latches Switching circuits Inverters Power measurement Resistance

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