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Two stage ultra-wideband power amplifier based on GaN HEMT

Two stage ultra-wideband power amplifier based on GaN HEMT

引用

International Conference on Communication Technology (ICCT)

作者： Dandan Zhu Zhiqun Cheng Guoguo Yan Shuai Chen Kai Wang Kaikai Fan Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781467370066

The research of a two stage ultra-broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based on 0.25um GaN technology are respectively adopted in driver stage and power stage. A frequency compensation and multi-side impedance matching approach are employed in such a way that simultaneously provides appropriate output power and optimal wideband matching. And a fan shaped micro strip line is implemented in the input matching network of the driver stage to achieve broadband impedance transformer. It has been observed that 15-30 W output power with minimum small signal gain of 19.9 dB is demonstrated in the entire band.

关键词： HEMTs Gallium nitride Dielectrics Wideband

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The Design of a Reconfigurable Successive Approximation Analog to Digital Converter for Biomedical Applications

The Design of a Reconfigurable Successive Approximation Anal...

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Xiaofei Kuang Xianli Fang Key Lab.of RF Circuit and System Education Ministry Hangzhou Dianzi University

In a biomedical signal processing system,ADC is an important circuit that successively converts analog biomedical signals into digital data for next analysis and processing. However, the ADC operates continuously. The power consumption is a very important factor in ADC circuit design. This brief present a 10 bits and 8 bits reconfigurable SAR ADC with a sampling rate of 20KS/s for implantable *** adopt Single-ended split-array capacitive DAC to reduce Power consumption and area. The digital parts of SAR ADC operate at 0.5V. The analog parts operate at 1 V and 0.6V in 10 bits mode and 8 bits mode,respectively. The power consumptions are 1.354..W and 152.28 nW. DNL are-9m.22 LSB and-0.02～0.21 *** are-0.2～0.58 LSB and-0.25～0.25 LSB. ENOB are 9.1 and 7.7, respectively. The ADC achieves the FOM of 123.37fJ/conversion-step and 36.55fJ/conversion-step,respectively.

关键词： SAR ADC DAC dynamic comparator

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Two Stage Ultra-Wideband Power Amplifier Based on GaN HEMT

Two Stage Ultra-Wideband Power Amplifier Based on GaN HEMT

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Dandan Zhu Zhiqun Cheng Guoguo Yan Shuai Chen Kai Wang Kaikai Fan Key Lab.of RF Circuit and System Education Ministry Hangzhou Dianzi University

The research of a two stage ultra- broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based on 0.25 um GaN technology are respectively adopted in driver stage and power stage. A frequency compensation and multi-side impedance matching approach are employed in such a way that simultaneously provides appropriate output power and optimal wideband matching. And a fan shaped micro strip line is implemented in the input matching network of the driver stage to achieve broadband impedance transformer. It has been observed that 15-30 W output power with minimum small signal gain of 19.9 dB is demonstrated in the entire band.

关键词： GaN HEMT Ultra broadband Power amplifier Output power

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An Ultra-Wideband Power Amplifier Based on GaN HEMT

An Ultra-Wideband Power Amplifier Based on GaN HEMT

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Dandan Zhu Zhiqun Cheng Guoguo Yan Shuai Chen Kai Wang Kaikai Fan Key Lab.of RF Circuit and System Education Ministry Hangzhou Dianzi University

The design, fabrication and measurements of an ultra-broadband power amplifier based on GaN HEMT technology which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper.A TGF2023-2-02 GaN HEMT chip from TriQuint is adopted. The amplifier is designed by using a frequency compensation and multi impedance broadband matching approach for both input and output networks. And a sector micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 11 dB power gain over 3-8GHz. The saturated output power is 37.3 dBm under DC bias of Vds=28 V, Vgs=-2.53 V at the frequency of 5GHz.

关键词： GaN HEMT ultra broadband power amplifier output power

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The Design of Low Noise Chopper Operational Amplifier with Inverter

The Design of Low Noise Chopper Operational Amplifier with I...

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Xiaofei Kuang Ting Wang Fuxuan Fan Ministry of Education Key Lab.of RF Circuit and System Hangzhou Dianzi University

The input offset voltage is a quit important performance parameter for operational amplifiers, and the low frequency 1/f noise has a great effect on the offset voltage. In this paper, chopping technology which is an efficient approach to decrease the 1/f noise and offset voltage of CMOS amplifiers is adopted. In the low pass filter, the multiplier composed of R and C is used to filter out the modulation noise. The circuit of the presented chopper amplifier is designed and simulated with 45 nm CMOS process and a 1V supply. Simulated results show that the total harmonic distortion of chopper amplifier is 54.1dB and the chopper frequency is 10 kHz. The input referred noise is 2.54 nV / (Hz)@1kHz, and the average power consumption is 65.5μ*** proposed technology has a pleasurable preference.

关键词： Chopper amplifier Low pass filter Offset voltage Chopping technology

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A Transimpedance Amplifier with DC Photocurrent Rejection for Infrared Optical Receiver

A Transimpedance Amplifier with DC Photocurrent Rejection fo...

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Xiaofei Kuang Fuxuan Fan Ting Wang Ministry of Education Key Lab.of RF Circuit and System Hangzhou Dianzi University

For CMOS process infrared receiver *** paper mainly studies the suppression of the infrared receiver noise,and presents a circuit design which can convert photo-generated current to *** the design,infrared receiver chip not only can accurately detect tens of nA to hundreds of μA current,but also can effectively avoid amplifier's saturation distortion when large current *** Cadence simulation tools for functional ***,the results show that when operating voltage is 3 V,the circuit has a well supression for 10 nA to 290μA DC photocurrent and the gain obtained with 46 dB with a good *** noise is 3.41 nV/（HZ） and the power consumption is *** chip can achieve a high sensitivity,strong anti-interference ability of the design *** the photoelectric conversion section,we specially designed DC noise suppression and compensation circuit to filter out most of the DC signal component from the input signal,and further improve the system's sensitivity of the input signal.

关键词： Infrared receiver Noise suppression Ⅰ-Ⅴ converter circuit Transimpedance amplifier

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Broadband Switch Power Amplifier Design

Broadband Switch Power Amplifier Design

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Shuai Chen Zhiqun Cheng Kai Wang Hui Wang Key Lab.of RF Circuit and System Education MinistryHangzhou Dianzi University

In recent time, class-EF power amplifiers are promising for the high power added efficiency(PAE) by turning output matching network(OMN) to control the even and odd harmonics at the drain. High quality factor(Q) of output matching network in the circuit is *** it is difficult to design a broadband high efficiency power amplifier. A practical method of broadband design by using microstrip radial stub instead of normal open or short stub is proposed in this paper. A compact OMN topological structure is also proposed to reduce the size of circuit. Simulation results show that proposal class-EF GaN HEMT power amplifier has PAE of more than 60% and bandwidth of 850 MHz from 1.7GHz to 2.55 GHz. The output power is from 41.5dBm to 42.5dBm.

关键词： Class-EF Power amp lifier Microstrip radial stub GaN HEMT Compact OMN

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The design of rf front-end chip for typhoon monitoring radiometer

The design of RF front-end chip for typhoon monitoring radio...

引用

International Conference on Communication Technology (ICCT)

作者： Zhiming Fang Zhiqun Cheng Tang Liu Jian Zhang Lili Dang Jian Yu Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China Key Laboratory of Terahertz Solid-State Technology Shanghai Institute of Micro-system and Information Technology Shanghai

ISBN: (纸本)9781467370066

The paper presents the design and performance of a V-band radiometer MMIC with 0.1μm GaAs pHEMT technology. The circuit includes a frequency double LO chain and a resistive mixer. The resistive mixer with balance structure topology can improve the image-rejection ratio. Compared with other mixers, the sub-harmonic mixer can achieve high isolation. The typical isolation measured between LO to rf is almost 60dB. The measured conversion loss of the mixer is from 13dB to 15dB over rf frequency 50-60GHz. The bandwidth of IF reaches 1 GHz. The circuit also exhibits very good phase difference between I/Q within 90 ± 6°. The completed mixer show 25dB image-rejection ratio (IRR) over the whole band.

关键词： Radio frequency Frequency measurement PHEMTs Mixers Loss measurement Radiometry

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The Design of rf Front-end Chip for Typhoon Monitoring Radiometer

The Design of RF Front-end Chip for Typhoon Monitoring Radio...

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Zhiming Fang Zhiqun Cheng Tang Liu Jian Zhang Lili Dang Jian Yu Key Lab.of RF Circuit and System Education MinistryHangzhou Dianzi University Key Laboratory of Terahertz Solid-State Technology Shanghai Institute of Micro-system and Information Technology

The paper presents the design and performance of a V-band radiometer MMIC with 0.1μm GaAs pHEMT technology. The circuit includes a frequency double LO chain and a resistive mixer. The resistive mixer with balance structure topology can improve the image-rejection ratio. Compared with other mixers.. the sub-harmonic mixer can achieve high isolation. The typical isolation measured between LO to rf is almost 60 dB. The measured conversion loss of the mixer is from 13 dB to 15 dB over rf frequency 50-60 *** bandwidth of IF reaches 1 GHz. The circuit also exhibits very good phase difference between I/Q within 90± 6°.The completed mixer show 25 dB image-rejection ratio（IRR） over the whole band.

关键词： Resistive mixer Harmonic mixer Singly balanced Image-rejection ratio

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Study of The W-band Monolithic Low-noise Amplifier

Study of The W-band Monolithic Low-noise Amplifier

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Lili Dang Zhiqun Cheng Tang Liu Jian Zhang Zhiming Fang Ruirui Chen Key Lab.of RF Circuit and System Education Ministry Hangzhou Dianzi University Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

This paper demonstrates a W-band monolithic Low no ise amplifier which is based on UMS company0.1μm GaAs pHEMT process. The circuit is designed with three-stages amplifiers to meet higher power *** size is only 1×1.7mm yet. The measured results of LNA show the power gain of 12 dB, low NF of 4.7dB,which are consistent well with the simulation ones.

关键词： PHEMT W-band Low-noise amplifier

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