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检索条件"机构=Key Lab. of RF Circuits and System of Ministry of Education"

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Study on Pt-Rh Composite Thin Film Electrode for High Temperature Saw Device

Study on Pt-Rh Composite Thin Film Electrode for High Temper...

引用

SPAWDA Symposium on Piezoelectricity, Acoustic Waves, and Device Applications

作者： Daiqing Zhu Weipeng Xuan Jinkai Chen Shurong Dong Hao Jin Jikui Luo Ministry of Education Key Lab. of RF Circuits and Systems College of Electronics & Information Hangzhou Dianzi University Hangzhou China Key Lab. of Adv. Micro/Nano Electron. Dev. & Smart Sys. of Zhejiang College of Info. Sci. & Electron. Eng. Zhejiang University Hangzhou China

ISBN: (纸本)9798350320817

In order to improve the maximum operating temperature of surface acoustic wave (SAW) devices, the major challenge comes from the bearing capacity of the thin film electrode at high temperature. Traditional pure metal such as Pt and Ir are prone to oxidation, agglomeration and recrystallization in high temperature environment. In this paper, Pt-Rh thin films were observed by scanning electron microscope (SEM) at extremely high temperature, which verified that Pt-Rh has excellent high temperature resistance. Therefore, Pt-Rh was used as the electrode layer material, and a resistance wire of 5μm width was designed and fabricated to imitate the interdigital transducer (IDT) of SAW device. The change of resistance value of the film electrode prepared with different electrode layer structure and different passivation protection layer at high temperature were observed by four-line method. A new ZrO 2 /Pt-Rh(10%)/Al 2 O 3 /Pt-Rh(10%)/Al 2 O 3 composite thin film electrode is proposed. The maximum operating temperature can reach 1600°C and can work stably for 0.93h at 1500°C. This is of great significance for the preparation of high temperature SAW devices.

关键词： Electrodes Temperature measurement Resistance Scanning electron microscopy Transducers Wires Surface acoustic wave devices

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Ultra High Temperature Saw Sensors Based on Signle Crystalline AlN and Multilayer Composite Electrode

Ultra High Temperature Saw Sensors Based on Signle Crystalli...

引用

SPAWDA Symposium on Piezoelectricity, Acoustic Waves, and Device Applications

作者： Yihong Zhang Weipeng Xuan Daiqing Zhu Shurong Dong Hao Jin Jikui Luo Key Lab. of Adv. Micro/Nano Electron. Dev. & Smart Sys. of Zhejiang College of Info. Sci. & Electron. Eng. Zhejiang University Hangzhou China Ministry of Education Key Lab. of RF Circuits and Systems College of Electronics & Information Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9798350320817

A newly constructed surface acoustic wave (SAW) device was used to broaden the applicability of sensors at ultra-high temperatures (> 1000°C) and increase the stability under ultra-high temperatures. The choice of piezoelectric substrate and the design of temperature-resistant electrodes were both addressed in this design. We investigate the stability of AlN piezoelectric film for ultra-high-temperature applications, based on the reliability of AlN/Sapphire structure in high-temperature applications. In addition, a Pt-Rh and Al2O3 composite electrode structure was constructed and studied. Finally, a high temperature sensing resistant experiment based on single crystalline piezoelectric AlN was carried out, demonstrating that the developed SAW device can still work well at temperatures up to 1200°*** frequency response change of the SAW sensor under high temperatures was obtained and analyzed.

关键词： Temperature sensors Electrodes Surface acoustic waves Surface acoustic wave devices Stability analysis Sensors III-V semiconductor materials

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High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1.8W Output Power

High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1....

引用

International Conference on Integrated circuits and Microsystems (ICICM)

作者： Peng Xu Zhiqun Cheng ZhiWei Zhang MingWen Meng Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China

ISBN: (数字)9781728189789

ISBN: (纸本)9781728189796

This paper presented a four-stage E-band power amplifier monolithic microwave integrated circuits(MMIC) based on GaN high-electron-mobility transistor(HEMT) with 60nm of gate length. The layout of the proposed circuit shows that the small-signal gain of 21-23dB and power added efficiency(PAE) of 25.5%-27.5% in the E-band low frequency (71-76GHz). The saturated output power of greater than 32.6dBm(1.8W) is achieved with the power gain of more than 12.6 dB and the linear power gain of more than 20dB. The power density of around 1.4W/mm is achieved at the final stage.

关键词： Power amplifiers HEMTs Gallium nitride Gain Power generation Logic gates Radio frequency

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Improved Combiner Design for Broadband Outphasing Power Amplifier

Improved Combiner Design for Broadband Outphasing Power Ampl...

引用

International Conference on Integrated circuits and Microsystems (ICICM)

作者： MingWen Meng Zhiqun Cheng Peng Xu Guohua Liu Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China

ISBN: (数字)9781728189789

ISBN: (纸本)9781728189796

In this paper, an outphasing power amplifier(PA) with novel combiner is proposed. By replacing quarter wavelength impedance in classic structure with series microstrip lines with stop-band suppression, the proposed circuit achieved wide bandwidth while ensuring acceptable efficiency and linearity. Analytical and ADS simulation are presented in this work, an outphasing PA operating at center frequency 3.1GHz with 200MHz bandwidth is realized. The simulated results show excellent agreement in all cases considered.

关键词： Linearity Bandwidth Microstrip Power transmission lines Impedance Broadband amplifiers Power amplifiers

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A Design Approach for High-Q FBARs with Double Frames

A Design Approach for High-Q FBARs with Double Frames

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SPAWDA Symposium on Piezoelectricity, Acoustic Waves, and Device Applications

作者： Biao Zhang Weipeng Xuan Linhao Shi Xingli He Shurong Dong Hao Jin Jikui Luo Ministry of Education Key Lab. of RF Circuits and Systems College of Electronics & Information Hangzhou Dianzi University Hangzhou China School of Electronic and Information Engineering Soochow University Suzhou China Key Lab. of Adv. Micro/Nano Electron. Dev. & Smart Sys. of Zhejiang College of Info. Sci. & Electron. Eng. Zhejiang University Hangzhou China ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou China

ISBN: (纸本)9798350320817

Film bulk acoustic resonator (FBAR) has attracted great attention due to its widespread applications for radio frequency front-end (rfFE) systems. To improve the performance of the wireless module, high-performance FBARs with large effective electrotechnical coupling coefficient $\left( {k_{eff}^2} \right)$, high quality factor (Q) and spurious-free are always highly demanded. However, the spurious modes near the main resonance and energy leakage at the edge of the device degrade the performance, and many methods have been developed to overcome these issues. The development of microfabrication technology, especially the advancement of the film transfer process-based fabrication method, makes it possible to manufacture optimized structures with framed electrodes on both faces of the suspended piezoelectric films. In this paper, FBARs operating at ~3.5 GHz are designed and optimized by the finite element method (FEM). New design that employs double-faces raised frames to suppress the lamb waves are demonstrated. The optimized structure leads to approximately 220% enhancement of the quality factor at anti-resonance frequency (f a) compared with traditional structure, a smoother impedance curve is obtained, at the cost of relatively slight decrement of $k_{eff}^2$.

关键词： Q-factor Performance evaluation Wireless communication Piezoelectric films Microfabrication Piezoelectricity Finite element analysis

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Simulation Analysis of High Frequency and High Pressure Piezoelectric Micro-Pump

Simulation Analysis of High Frequency and High Pressure Piez...

引用

SPAWDA Symposium on Piezoelectricity, Acoustic Waves, and Device Applications

作者： Jiafeng Ni Weipeng Xuan Yilin Li Wenjun Li Shurong Dong Jikui Luo Ministry of Education Key Lab. of RF Circuits and Systems College of Electron. & Info Hangzhou Dianzi University Hangzhou China Key Lab. of Adv. Micro/Nano Electron. Dev. & Smart Sys. of Zhejiang College of Info. Sci. & Electronic Eng Zhejiang University Hangzhou China ZJU-Hangzhou Global Scientific and Technological Innovation Center Zhejiang University Hangzhou China International Joint Innovation Center Zhejiang University Haining China

ISBN: (纸本)9798350320817

In this paper, a piezoelectric micro-pump with integrated valve based on synthetic jet structure is proposed. The piezoelectric micro-pump possesses a size of about 16mm*16mm*3mm, which works at the first-order resonant frequency of 11649Hz. With the rectangular wave driving signal has the amplitude of 24V, the average output flow of the piezoelectric micro-pump is about 139.5 mL /min. The maximum output pressure can reach more than 30 kPa. Compared with the existing piezoelectric pump, it has the advantages of high-pressure retention and small size, indicating a potential application in wearable device such as smart pressure watch.

关键词： Analytical models Wearable computers Modal analysis Frequency-domain analysis Pumps Resonant frequency Piezoelectricity

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Two stage ultra-wideband power amplifier based on GaN HEMT 16

Two stage ultra-wideband power amplifier based on GaN HEMT

引用

16th IEEE International Conference on Communication Technology, ICCT 2015

作者： Zhu, Dandan Cheng, Zhiqun Yan, Guoguo Chen, Shuai Wang, Kai Kaikai, Fan Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou310018 China

ISBN: (纸本)9781467370042

The research of a two stage ultra-broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based on 0.25um GaN technology are respectively adopted in driver stage and power stage. A frequency compensation and multi-side impedance matching approach are employed in such a way that simultaneously provides appropriate output power and optimal wideband matching. And a fan shaped micro strip line is implemented in the input matching network of the driver stage to achieve broadband impedance transformer. It has been observed that 15-30 W output power with minimum small signal gain of 19.9 dB is demonstrated in the entire band. © 2015 IEEE.

关键词： Power amplifiers

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Class-F power amplifier with 82.9% maximum PAE at 1.89GHz for LTE applications

Class-F power amplifier with 82.9% maximum PAE at 1.89GHz fo...

引用

International Conference on Communication Technology (ICCT)

作者： Kaikai Fan Zhiqun Cheng Kai Wang Guohua Liu Hui Wang Ministry of Education key Lab. of RF circuits and Systems Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781467370066

A GaN HEMT class-F power amplifier (PA) achieving a high maximum power added efficiency (PAE) is presented. The class-F PA exhibits maximum PAE of 82.9% with an output power of 39dBm at 1.89GHz. The PA shows PAE higher than 75% over 100MHz frequency range from 1.8GHz to 1.9GHz. Source-pull and load-pull techniques in large signal analysis were conducted to satisfy the optimum load resistance at fundamental frequency, second and third harmonics.

关键词： Harmonic analysis HEMTs Logic gates Lead Impedance Computational modeling Microstrip

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High efficiency power amplifier for Beidou satellite navigation system

High efficiency power amplifier for Beidou satellite navigat...

引用

International Conference on Communication Technology (ICCT)

作者： Kai Wang Zhiqun Cheng Kaikai Fan Shuai Chen Guohua Liu Hui Wang Ministry of Education key Lab. of RF circuits and Systems Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781467370066

In this paper, high efficiency power amplifier for Beidou satellite navigation system is presented. The continuous Class-F PAs will be promising candidate for performances of broadband efficiency and power. Meanwhile, stability networks are also integrated into the layout to prevent low-frequency oscillations. Cree GaN HEMT CGH40010F is used in design of proposal PA. Simulation results show drain efficiency from 63% to 69% and output powers from 11.3-12.3 W over frequency of 1.1 to 1.7 GHz.

关键词： HEMTs Navigation Gallium nitride Broadband amplifiers Layout Substrates

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An ultra-wideband power amplifier based on GaN HEMT

An ultra-wideband power amplifier based on GaN HEMT

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International Conference on Communication Technology (ICCT)

作者： Dandan Zhu Zhiqun Cheng Guoguo Yan Shuai Chen Kai Wang Kaikai Fan Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9781467370066

The design, fabrication and measurements of an ultra-broadband power amplifier based on GaN HEMT technology which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper. A TGF2023-2-02 GaN HEMT chip from TriQuint is adopted. The amplifier is designed by using a frequency compensation and multi impedance broadband matching approach for both input and output networks. And a sector micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 11 dB power gain over 3-8 GHz. The saturated output power is 37.3 dBm under DC bias of Vds=28 V, Vgs=-2.53 V at the frequency of 5 GHz.

关键词： HEMTs Gallium nitride Gallium arsenide Electric potential Load modeling Dielectrics Substrates

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