This paper presents an absorptive common-mode stripline filter, which consists of two reflective common-mode filter (CMF) units and one absorptive CMF unit. For differential-mode (DM) signal, the filter is equivalent ...
This paper presents an absorptive common-mode stripline filter, which consists of two reflective common-mode filter (CMF) units and one absorptive CMF unit. For differential-mode (DM) signal, the filter is equivalent to an all-pass filter, while for common-mode (CM) signal, it exhibits band-stop characteristics. The filter can achieve more than 90% energy absorption for CM signal in the frequency range from 4.84 GHz to 6.11 GHz, while the DM signal could pass through from DC to 10.32 GHz.
This paper presents a highly efficient ultra-wideband (UWB) bandpass filter using coplanar waveguide (CPW) technology. The design employs bow-tie cells to achieve four transmission poles and one transmission zero. A s...
This paper presents a highly efficient ultra-wideband (UWB) bandpass filter using coplanar waveguide (CPW) technology. The design employs bow-tie cells to achieve four transmission poles and one transmission zero. A step impedance resonator is introduced for further performance enhancement, and it contributes an additional transmission zero at low frequencies and optimizes the stopband. A T-shaped short-circuit stub is used to create a trap frequency band with deep attenuation, effectively blocking the ITU8.0 frequency band centered at 8.2 GHz. The proposed filter features a passband range from 3.7 GHz to 9.6 GHz, an insertion loss less than 0.8 dB, and a return loss greater than 20 dB. Additionally, the filter exhibits high selectivity, with a 30 dB skirt factor of 0.88 and a wide stopband up to 17.7 GHz, where S 21 is below −20 dB.
A broadband absorptive common-mode (CM) filter based on an H-shaped defect ground structure (DGS) is proposed in this paper. The filter suppresses CM noise by periodically etching H-shaped defect structures with diffe...
A broadband absorptive common-mode (CM) filter based on an H-shaped defect ground structure (DGS) is proposed in this paper. The filter suppresses CM noise by periodically etching H-shaped defect structures with different sizes along the return path of the differential lines, while maintaining the integrity of the differential signal. It achieves a CM suppression over 20 dB within the frequency range of 1.83 GHz to 6.38 GHz. Further, the filter achieves absorption by embedding a resistor in the etched structure to dissipate reflected noise. By operating within the frequency ranges of 2.06 GHz to 3.14 GHz and 4.83 GHz to 6.88 GHz, the CM noise absorption efficiency can surpass 90%, effectively eradicating CM noise in the Wi-Fi frequency bands of 2.4 GHz and 5 GHz. The size of the filter is approximately 0.17λ g ×0.41λ g .
A newly constructed surface acoustic wave (SAW) device was used to broaden the applicability of sensors at ultra-high temperatures (> 1000°C) and increase the stability under ultra-high temperatures. The choic...
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In this paper, a compact broadband amplifier is realized based on 65nm CMOS technology. The three differential CMOS pairs adopt the common source (CS) structure, rely on the capacitance neutralization technology and u...
In this paper, a compact broadband amplifier is realized based on 65nm CMOS technology. The three differential CMOS pairs adopt the common source (CS) structure, rely on the capacitance neutralization technology and use the transformer for impedance transformation to achieve ultra-wideband matching. The simulation results show that in FR2 frequency band (24.26 - 52.6GHz), the output gain of the amplifier is 17±2.5dB, the DC power consumption is 45mW, the supply voltage is 1V, and the core circuit area is 0.11mm2.
High crystalline quality Al0.56Sc0.44N ( 112¯0) (a-plane) films were prepared on Al2O3 ( {11¯02) substrates by magnetron reaction sputtering. X-ray diffraction (XRD) analysis indicates that the grown Al0.56S...
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A 24-29.5 GHz compact receiver front end in 65nm CMOS for 5G millimeter-wave application is presented in this paper. A compact differential image rejection filter structure is used to achieve effective image suppressi...
A 24-29.5 GHz compact receiver front end in 65nm CMOS for 5G millimeter-wave application is presented in this paper. A compact differential image rejection filter structure is used to achieve effective image suppression and good impedance matching between LNA and mixer. The image rejection of the filter is realized by an out-of-band zero point generated by the double ring rectangular resonator. Designed and implemented in 65-nm CMOS technology with 1-V supply, the proposed receiver front end realizes that the conversion gain of 25 dB to 33.4 dB and the image signal suppression of 33.5 dB to 60.5 dB from 24 GHz to 29.5 GHz. The chip size is only 0.49 mm2 excluding all DC PADs.
A 3D-stacked multi-stage inertial microfluidic sorting chip for high-throughput enrichment of Circulating Tumor Cells (CTCs) and convenient downstream analysis is demonstrated. It uses a multi-stage structure to overc...
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Coronary artery disease (CAD) is a major cause of mortality, especially among aging populations, making timely and accurate diagnosis essential. In this work, a portable wireless device powered by artificial intellige...
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This paper demonstrates a 20–55 GHz broadband low-power down-conversion mixer applies in 5G millimeter-wave (MMW) communication using 65-nm CMOS process. The structure of the mixer is a modified Gilbert-cell, which r...
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ISBN:
(纸本)9781665482271
This paper demonstrates a 20–55 GHz broadband low-power down-conversion mixer applies in 5G millimeter-wave (MMW) communication using 65-nm CMOS process. The structure of the mixer is a modified Gilbert-cell, which reduces the demand of supply voltage. By using weak inversion biasing, a low DC power consumption and low LO power can be achieved. At the IF output, A resistive-feedback inverter amplifier is used to improve the conversion gain. Marchand balun with compensation line is designed for broadband matching while converting the differential signal and single-ended signal. From 20 to 55 GHz, the proposed mixer achieves conversion gain of -0.37 to 2.41 dB at fixed 2 GHz IF frequency with a -3 dBm LO drive power. At 38 GHz the input 1-dB compression point is -11.3 dBm. The mixer consuming 7.48 mW from a 1.1V supply voltage. The chip size is 0.135 mm 2 in core and 0.25 mm 2 including all pads.
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