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arXiv 2018年

作者： Qian, Chao Lin, Xiao Yang, Yi Gao, Fei Shen, Yichen Lopez, Josue Kaminer, Ido Zhang, Baile Li, Erping Soljačić, Marin Chen, Hongsheng Key Lab. of Advanced Micro/Nano Electronic Devices & Smart Systems of Zhejiang Electromagnetics Academy at Zhejiang University Zhejiang University Hangzhou310027 China ZJU-UIUC Institute College of Information Science and Electronic Engineering Zhejiang University Hangzhou310027 China Division of Physics and Applied Physics School of Physical and Mathematical Sciences Nanyang Technological University Singapore637371 Singapore Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States Department of Physics Massachusetts Institute of Technology CambridgeMA02139 United States Centre for Disruptive Photonic Technologies NTU Singapore637371 Singapore

Superscattering, i.e., a phenomenon of the scattering cross section from a subwavelength object exceeding the single-channel limit, has important prospects in enhanced sensing/spectroscopy, solar cells, and biomedical imaging. Superscattering can be typically constructed only at a single frequency regime, and depends critically on the inescapable material losses. Under such realistic conditions, superscattering has not been predicted nor observed to exist simultaneously at multiple frequency regimes. Here we introduce multifrequency superscattering in a subwavelength hyperbolic structure, which can be made from artificial metamaterials or from naturally-existing materials, such as hexagonal boron nitride (BN), and show the advantage of such hyperbolic materials for reducing structural complexity. The underlying mechanism is revealed to be the multimode resonances at multiple frequency regimes as appear in BN due to the peculiar dispersion of phonon-polaritons. Importantly, the multifrequency superscattering has a high tolerance to material losses and some structural variations, bringing the concept of multifrequency superscattering closer to useful and realistic conditions. Copyright © 2018, The Authors. All rights reserved.

关键词： III-V semiconductors

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