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Analytical and experimental study of a valveless piezoelectric micropump with high flowrate and pressure load

Microsystems & Nanoengineering 2023年第3期9卷 221-234页

作者： Jiafeng Ni Weipeng Xuan Yilin Li Jinkai Chen Wenjun Li Zhen Cao Shurong Dong Hao Jin Lingling Sun Jikui Luo Ministry of Education Key Lab.of RF Circuits and Systems College of Electron.&Info.Hangzhou Dianzi UniversityHangzhou 310018China Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design Hangzhou Dianzi UniversityHangzhou 310018China Key Lab.of Adv.Micro/Nano Electron.Dev.&Smart Sys.of Zhejiang College of Info.Sci.&Electronic Eng.Zhejiang UniversityHangzhou 310027China International Joint Innovation Center Zhejiang UniversityHaining 314400China

Miniaturized gas pumps based on electromagnetic effect have been intensively studied and widely applied in ***,the electromagnetic effect-based gas pumps normally have large sizes,high levels of noises and high power consumption,thus they are not suitable for wearable/portable ***,we propose a high-flowrate and high-pressure load valveless piezoelectric micropump with dimensions of 16 mm*16 mm*5 *** working frequency,vibration mode and displacement of the piezoelectric actuator,the velocity of gas flow,and the volume flowrate of the micropump are analyzed using the finite element analysis *** maximum vibration amplitude of the piezoelectric actuator reaches~29.4μ*** output gas flowrate of the pump is approximately 135 mL/min,and the maximum output pressure exceeds 40 ***,a prototype of the piezoelectric micropump is *** show that performance of the micropump is highly consistent with the numerical analysis with a high flowrate and pressure load,demonstrated its great potential for wearable/portable applications,especially for blood pressure monitoring.

关键词： pump piezoelectric load

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A broadband Doherty power amplifier based on the two-port networks method

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IEICE Electronics Express 2021年第18期16卷 1-5页

作者： Zhang, Zhiwei Cheng, Zhiqun Zhang, Zhendong Liu, Guohua Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou310018 China

This paper proposes a simple method for designing a broadband Doherty power amplifier. The two-port network is used to represent the output matching networks and load modulation networks. Then, the relationships between the parameters of the two-port network and the output impedances of the transistors and the impedances of the power amplifier branches at the combiner are derived. The output matching network and the load modulation network are designed based on the parameters of the two-port network. A broadband Doherty power amplifier is designed and fabricated to verify the effectiveness of the proposed method. The measured results show that the saturated output power is 43.5-45 dBm and the saturated drain efficiency is 65-75% in 2.1-2.7 GHz. And the drain efficiency is greater than 40% at the 6 dB power back-off in the same frequency band. And the gain is above 12 dB. Copyright © 2019 The Institute of Electronics, Information and Communication Engineers

关键词： Efficiency

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A Dual-Polarized Patch Antenna With Electric and Magnetic Coupling Feed for 5G Base Stations

A Dual-Polarized Patch Antenna With Electric and Magnetic Co...

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International Conference on Integrated circuits and Microsystems (ICICM)

作者： Weiwei Zhou Zhiqun Cheng Y. Jay Guo Key Lab. of RF Circuit and System Hangzhou Dianzi University HangZhou China

The following topics are dealt with: integrated circuit design; low-power electronics; CMOS integrated circuits; CMOS analogue integrated circuits; operational amplifiers; system-on-chip; field programmable gate array... 详细信息

ISBN: (数字)9781728189789

ISBN: (纸本)9781728189796

关键词： Dipole antennas Antennas Antenna feeds Broadband antennas Base stations Patch antennas Wireless communication

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High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1.8W Output Power

High Efficiency GaN HEMT E-Band Power Amplifier MMIC with 1....

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International Conference on Integrated circuits and Microsystems (ICICM)

作者： Peng Xu Zhiqun Cheng ZhiWei Zhang MingWen Meng Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China

ISBN: (数字)9781728189789

ISBN: (纸本)9781728189796

This paper presented a four-stage E-band power amplifier monolithic microwave integrated circuits(MMIC) based on GaN high-electron-mobility transistor(HEMT) with 60nm of gate length. The layout of the proposed circuit shows that the small-signal gain of 21-23dB and power added efficiency(PAE) of 25.5%-27.5% in the E-band low frequency (71-76GHz). The saturated output power of greater than 32.6dBm(1.8W) is achieved with the power gain of more than 12.6 dB and the linear power gain of more than 20dB. The power density of around 1.4W/mm is achieved at the final stage.

关键词： Power amplifiers HEMTs Gallium nitride Gain Power generation Logic gates Radio frequency

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Improved Combiner Design for Broadband Outphasing Power Amplifier

Improved Combiner Design for Broadband Outphasing Power Ampl...

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International Conference on Integrated circuits and Microsystems (ICICM)

作者： MingWen Meng Zhiqun Cheng Peng Xu Guohua Liu Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou China

ISBN: (数字)9781728189789

ISBN: (纸本)9781728189796

In this paper, an outphasing power amplifier(PA) with novel combiner is proposed. By replacing quarter wavelength impedance in classic structure with series microstrip lines with stop-band suppression, the proposed circuit achieved wide bandwidth while ensuring acceptable efficiency and linearity. Analytical and ADS simulation are presented in this work, an outphasing PA operating at center frequency 3.1GHz with 200MHz bandwidth is realized. The simulated results show excellent agreement in all cases considered.

关键词： Linearity Bandwidth Microstrip Power transmission lines Impedance Broadband amplifiers Power amplifiers

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The Design of Low Noise Chopper Operational Amplifier with Inverter

The Design of Low Noise Chopper Operational Amplifier with I...

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2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Xiaofei Kuang Ting Wang Fuxuan Fan Ministry of Education Key Lab.of RF Circuit and System Hangzhou Dianzi University

The input offset voltage is a quit important performance parameter for operational amplifiers, and the low frequency 1/f noise has a great effect on the offset voltage. In this paper, chopping technology which is an efficient approach to decrease the 1/f noise and offset voltage of CMOS amplifiers is adopted. In the low pass filter, the multiplier composed of R and C is used to filter out the modulation noise. The circuit of the presented chopper amplifier is designed and simulated with 45 nm CMOS process and a 1V supply. Simulated results show that the total harmonic distortion of chopper amplifier is 54.1dB and the chopper frequency is 10 kHz. The input referred noise is 2.54 nV / (Hz)@1kHz, and the average power consumption is 65.5μ*** proposed technology has a pleasurable preference.

关键词： Chopper amplifier Low pass filter Offset voltage Chopping technology

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The Design of a Reconfigurable Successive Approximation Analog to Digital Converter for Biomedical Applications

The Design of a Reconfigurable Successive Approximation Anal...

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2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Xiaofei Kuang Xianli Fang Key Lab.of RF Circuit and System Education Ministry Hangzhou Dianzi University

In a biomedical signal processing system,ADC is an important circuit that successively converts analog biomedical signals into digital data for next analysis and processing. However, the ADC operates continuously. The power consumption is a very important factor in ADC circuit design. This brief present a 10 bits and 8 bits reconfigurable SAR ADC with a sampling rate of 20KS/s for implantable *** adopt Single-ended split-array capacitive DAC to reduce Power consumption and area. The digital parts of SAR ADC operate at 0.5V. The analog parts operate at 1 V and 0.6V in 10 bits mode and 8 bits mode,respectively. The power consumptions are 1.354..W and 152.28 nW. DNL are-9m.22 LSB and-0.02～0.21 *** are-0.2～0.58 LSB and-0.25～0.25 LSB. ENOB are 9.1 and 7.7, respectively. The ADC achieves the FOM of 123.37fJ/conversion-step and 36.55fJ/conversion-step,respectively.

关键词： SAR ADC DAC dynamic comparator

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An Ultra-Wideband Power Amplifier Based on GaN HEMT

An Ultra-Wideband Power Amplifier Based on GaN HEMT

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2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Dandan Zhu Zhiqun Cheng Guoguo Yan Shuai Chen Kai Wang Kaikai Fan Key Lab.of RF Circuit and System Education Ministry Hangzhou Dianzi University

The design, fabrication and measurements of an ultra-broadband power amplifier based on GaN HEMT technology which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper.A TGF2023-2-02 GaN HEMT chip from TriQuint is adopted. The amplifier is designed by using a frequency compensation and multi impedance broadband matching approach for both input and output networks. And a sector micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 11 dB power gain over 3-8GHz. The saturated output power is 37.3 dBm under DC bias of Vds=28 V, Vgs=-2.53 V at the frequency of 5GHz.

关键词： GaN HEMT ultra broadband power amplifier output power

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Two Stage Ultra-Wideband Power Amplifier Based on GaN HEMT

Two Stage Ultra-Wideband Power Amplifier Based on GaN HEMT

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2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Dandan Zhu Zhiqun Cheng Guoguo Yan Shuai Chen Kai Wang Kaikai Fan Key Lab.of RF Circuit and System Education Ministry Hangzhou Dianzi University

The research of a two stage ultra- broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based on 0.25 um GaN technology are respectively adopted in driver stage and power stage. A frequency compensation and multi-side impedance matching approach are employed in such a way that simultaneously provides appropriate output power and optimal wideband matching. And a fan shaped micro strip line is implemented in the input matching network of the driver stage to achieve broadband impedance transformer. It has been observed that 15-30 W output power with minimum small signal gain of 19.9 dB is demonstrated in the entire band.

关键词： GaN HEMT Ultra broadband Power amplifier Output power

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Two stage ultra-wideband power amplifier based on GaN HEMT 16

Two stage ultra-wideband power amplifier based on GaN HEMT

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16th IEEE International Conference on Communication Technology, ICCT 2015

作者： Zhu, Dandan Cheng, Zhiqun Yan, Guoguo Chen, Shuai Wang, Kai Kaikai, Fan Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou310018 China

ISBN: (纸本)9781467370042

The research of a two stage ultra-broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based on 0.25um GaN technology are respectively adopted in driver stage and power stage. A frequency compensation and multi-side impedance matching approach are employed in such a way that simultaneously provides appropriate output power and optimal wideband matching. And a fan shaped micro strip line is implemented in the input matching network of the driver stage to achieve broadband impedance transformer. It has been observed that 15-30 W output power with minimum small signal gain of 19.9 dB is demonstrated in the entire band. © 2015 IEEE.

关键词： Power amplifiers

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