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An improved current bleeding mixer based on CMOS technology

An improved current bleeding mixer based on CMOS technology

引用

2010 International Conference on Communications and Mobile Computing, CMC 2010

作者： Cheng, Zhiqun Zhou, Pengfei Li, Jin Zhang, Sheng Key Lab. of RF Circuit and System Hangzhou Dianzi University Hangzhou China

ISBN: (纸本)9780769539898

An improved current bleeding CMOS mixer is designed in this paper. The conversion gain of the mixer is increased and the flicker noise of the mixer is reduced by inserting the inductor to form resonant circuit with parasitic capacitors of the source ports of the switch transistors in Gilbert mixer. The mixer is designed by using SMIC 0.18 um CMOS process. The simulated results show that the mixer proposed has a 1.76dB increase of conversion gain, 2.1dBm improvement of IIP3, 0.5dB decrease of noise figure with local power of -3 dBm as compared with the mixer before inserting the inductor. © 2010 IEEE.

关键词： Mixers (machinery)

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Design and linearity analysis of current bleeding CMOS mixer for GPS application

Design and linearity analysis of current bleeding CMOS mixer...

引用

2008 11th IEEE International Conference on Communication Technology, ICCT 2008

作者： Li, Jin Cheng, Zhiqun Fu, Kaihong Zhou, Xiaopeng Zhou, Yunfang Key Lab. of RF Circuit and System Hangzhou Dianzi University Hangzhou 310018 China

ISBN: (纸本)9781424422517

this paper describes 3.3V silicon down conversion mixer with a current bleeding Gilbert multiplier and also compares the conventional current bleeding Gilbert mixer with an improved current bleeding circuit, detail analysis are given about the two circuits, using 0.35 um process. With a 1.675 GHz local oscillator (LO) and a 1.575 GHz rf input. The results show that the gain and IIP2 of the improved mixer is higher than conventional Gilbert-type mixer, while the noise figure is better. © 2008 IEEE.

关键词： CMOS integrated circuits

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Design of wideband LC VCO with small Kvco fluctuation for rfID synthesizer application

Design of wideband LC VCO with small Kvco fluctuation for RF...

引用

2008 11th IEEE International Conference on Communication Technology, ICCT 2008

作者： Fu, Kaihong Cheng, Zhiqun Li, Jin Zhou, Yunfang Zhou, Xiaopeng Key Lab. of RF Circuit and System Hangzhou Dianzi University Hangzhou 310018 China

ISBN: (纸本)9781424422517

In this paper, a wideband LC VCO with small Kvco fluctuation for rfID synthesizer application is designed using SMIC 0.18um standard CMOS process. The switched capacitor array and switched varactor array are used for wideband design. The VCO exhibited Kvco fluctuation of only 29%, which is about one third that of a conventional VCO. The simulation results show that the tuning frequency range is 64% from 0.76GHz to 1.48GHz, VCO Gain is from 41MHz to 62MHz with power consumption of about 9 mW at 1.8 V supply. The measured phase noise is less than -90dBc/Hz at 100 kHz offset within the entire tuning range. © 2008 IEEE.

关键词： Varactors

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The Design of Low Noise Chopper Operational Amplifier with Inverter

The Design of Low Noise Chopper Operational Amplifier with I...

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Xiaofei Kuang Ting Wang Fuxuan Fan Ministry of Education Key Lab.of RF Circuit and System Hangzhou Dianzi University

The input offset voltage is a quit important performance parameter for operational amplifiers, and the low frequency 1/f noise has a great effect on the offset voltage. In this paper, chopping technology which is an efficient approach to decrease the 1/f noise and offset voltage of CMOS amplifiers is adopted. In the low pass filter, the multiplier composed of R and C is used to filter out the modulation noise. The circuit of the presented chopper amplifier is designed and simulated with 45 nm CMOS process and a 1V supply. Simulated results show that the total harmonic distortion of chopper amplifier is 54.1dB and the chopper frequency is 10 kHz. The input referred noise is 2.54 nV / (Hz)@1kHz, and the average power consumption is 65.5μ*** proposed technology has a pleasurable preference.

关键词： Chopper amplifier Low pass filter Offset voltage Chopping technology

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The Design of a Reconfigurable Successive Approximation Analog to Digital Converter for Biomedical Applications

The Design of a Reconfigurable Successive Approximation Anal...

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Xiaofei Kuang Xianli Fang Key Lab.of RF Circuit and System Education Ministry Hangzhou Dianzi University

In a biomedical signal processing system,ADC is an important circuit that successively converts analog biomedical signals into digital data for next analysis and processing. However, the ADC operates continuously. The power consumption is a very important factor in ADC circuit design. This brief present a 10 bits and 8 bits reconfigurable SAR ADC with a sampling rate of 20KS/s for implantable *** adopt Single-ended split-array capacitive DAC to reduce Power consumption and area. The digital parts of SAR ADC operate at 0.5V. The analog parts operate at 1 V and 0.6V in 10 bits mode and 8 bits mode,respectively. The power consumptions are 1.354..W and 152.28 nW. DNL are-9m.22 LSB and-0.02～0.21 *** are-0.2～0.58 LSB and-0.25～0.25 LSB. ENOB are 9.1 and 7.7, respectively. The ADC achieves the FOM of 123.37fJ/conversion-step and 36.55fJ/conversion-step,respectively.

关键词： SAR ADC DAC dynamic comparator

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An Ultra-Wideband Power Amplifier Based on GaN HEMT

An Ultra-Wideband Power Amplifier Based on GaN HEMT

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Dandan Zhu Zhiqun Cheng Guoguo Yan Shuai Chen Kai Wang Kaikai Fan Key Lab.of RF Circuit and System Education Ministry Hangzhou Dianzi University

The design, fabrication and measurements of an ultra-broadband power amplifier based on GaN HEMT technology which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper.A TGF2023-2-02 GaN HEMT chip from TriQuint is adopted. The amplifier is designed by using a frequency compensation and multi impedance broadband matching approach for both input and output networks. And a sector micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 11 dB power gain over 3-8GHz. The saturated output power is 37.3 dBm under DC bias of Vds=28 V, Vgs=-2.53 V at the frequency of 5GHz.

关键词： GaN HEMT ultra broadband power amplifier output power

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Two Stage Ultra-Wideband Power Amplifier Based on GaN HEMT

Two Stage Ultra-Wideband Power Amplifier Based on GaN HEMT

引用

2015 IEEE 16th International Conference on Communication Technology(ICCT 2015)

作者： Dandan Zhu Zhiqun Cheng Guoguo Yan Shuai Chen Kai Wang Kaikai Fan Key Lab.of RF Circuit and System Education Ministry Hangzhou Dianzi University

The research of a two stage ultra- broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based on 0.25 um GaN technology are respectively adopted in driver stage and power stage. A frequency compensation and multi-side impedance matching approach are employed in such a way that simultaneously provides appropriate output power and optimal wideband matching. And a fan shaped micro strip line is implemented in the input matching network of the driver stage to achieve broadband impedance transformer. It has been observed that 15-30 W output power with minimum small signal gain of 19.9 dB is demonstrated in the entire band.

关键词： GaN HEMT Ultra broadband Power amplifier Output power

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A high performance CMOS even harmonic mixer with a LC resonant circuit

A high performance CMOS even harmonic mixer with a LC resona...

引用

2010 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2010

作者： Junjun, Gao Zhiqun, Cheng Xuefang, Zhu Shengjun, Xu Key Lab. of RF Circuit and System Hangzhou Dianzi University Ministry of Education Hangzhou 310018 China

ISBN: (纸本)9781424457052

An even harmonic mixer (EHM) with a resonant circuit is designed in this paper. The proposed mixer employs a current reuse circuit in the rf input stage to improve its linearity and conversion gain, and uses the double frequency technique in the LO input stage, respectively. In addition, the proposed topology also has the advantages of low power consumption. The simulated results reveal that the proposed mixer has a conversion gain of 20.959 dB, third-order input intercept point (IIP3) of -1.099 dBm, under the supply voltage of 1.8 V, rf input frequency of 1.575GHz, LO input frequency of 0.7895GHz and LO power of -5 dBm. © 2010 IEEE.

关键词： Resonant circuits

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Two stage ultra-wideband power amplifier based on GaN HEMT 16

Two stage ultra-wideband power amplifier based on GaN HEMT

引用

16th IEEE International Conference on Communication Technology, ICCT 2015

作者： Zhu, Dandan Cheng, Zhiqun Yan, Guoguo Chen, Shuai Wang, Kai Kaikai, Fan Key Lab. of RF Circuit and System Education Ministry Hangzhou Dianzi University Hangzhou310018 China

ISBN: (纸本)9781467370042

The research of a two stage ultra-broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based on 0.25um GaN technology are respectively adopted in driver stage and power stage. A frequency compensation and multi-side impedance matching approach are employed in such a way that simultaneously provides appropriate output power and optimal wideband matching. And a fan shaped micro strip line is implemented in the input matching network of the driver stage to achieve broadband impedance transformer. It has been observed that 15-30 W output power with minimum small signal gain of 19.9 dB is demonstrated in the entire band. © 2015 IEEE.

关键词： Power amplifiers

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Design of low phase noise LC VCO for UHF rfID reader

Design of low phase noise LC VCO for UHF RFID reader

引用

2009 15th Asia-Pacific Conference on Communications, APCC 2009

作者： Zhou, Yunfang Cheng, Zhiqun Fu, Kaihong Li, Jin Zhou, Xiaopeng Key Lab. of the RF Circuit and System Ministry of Education Hangzhou Dianzi University Hangzhou 310018 China

ISBN: (纸本)9781424447855

A low phase noise CMOS LC VCO (Voltage controlled oscillator) for UHF rfID (Radio Frequency Identification) reader is designed. The quadrature output differential signal is achieved through Source-Coupled-Logic frequency divider-by-two circuit. The circuit is implemented with the SMIC 0.18um MOS technology and the simulator of Cadence Spectrerf. The simulation results show that the frequency range of VCO is from 1620MHz to 2020MHz before frequency divider and phase noise of -127.5dBc/Hz at 1MHz offset at oscillation frequency of 1.8GHz. The frequency rang of VCO is from 810MHz to 1010MHz after frequency divider by two and the phase noise of -133.5dBc/Hz @1MHz offset at the frequency of 900MHz. ©2009 IEEE.

关键词： Variable frequency oscillators

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