An improved current bleeding CMOS mixer is designed in this paper. The conversion gain of the mixer is increased and the flicker noise of the mixer is reduced by inserting the inductor to form resonant circuit with pa...
详细信息
this paper describes 3.3V silicon down conversion mixer with a current bleeding Gilbert multiplier and also compares the conventional current bleeding Gilbert mixer with an improved current bleeding circuit, detail an...
详细信息
In this paper, a wideband LC VCO with small Kvco fluctuation for rfID synthesizer application is designed using SMIC 0.18um standard CMOS process. The switched capacitor array and switched varactor array are used for ...
详细信息
The input offset voltage is a quit important performance parameter for operational amplifiers, and the low frequency 1/f noise has a great effect on the offset voltage. In this paper, chopping technology which is an e...
详细信息
The input offset voltage is a quit important performance parameter for operational amplifiers, and the low frequency 1/f noise has a great effect on the offset voltage. In this paper, chopping technology which is an efficient approach to decrease the 1/f noise and offset voltage of CMOS amplifiers is adopted. In the low pass filter, the multiplier composed of R and C is used to filter out the modulation noise. The circuit of the presented chopper amplifier is designed and simulated with 45 nm CMOS process and a 1V supply. Simulated results show that the total harmonic distortion of chopper amplifier is 54.1dB and the chopper frequency is 10 kHz. The input referred noise is 2.54 nV / (Hz)@1kHz, and the average power consumption is 65.5μ*** proposed technology has a pleasurable preference.
In a biomedical signal processing system,ADC is an important circuit that successively converts analog biomedical signals into digital data for next analysis and processing. However, the ADC operates continuously. The...
详细信息
In a biomedical signal processing system,ADC is an important circuit that successively converts analog biomedical signals into digital data for next analysis and processing. However, the ADC operates continuously. The power consumption is a very important factor in ADC circuit design. This brief present a 10 bits and 8 bits reconfigurable SAR ADC with a sampling rate of 20KS/s for implantable *** adopt Single-ended split-array capacitive DAC to reduce Power consumption and area. The digital parts of SAR ADC operate at 0.5V. The analog parts operate at 1 V and 0.6V in 10 bits mode and 8 bits mode,respectively. The power consumptions are 1.354..W and 152.28 nW. DNL are-9m.22 LSB and-0.02~0.21 *** are-0.2~0.58 LSB and-0.25~0.25 LSB. ENOB are 9.1 and 7.7, respectively. The ADC achieves the FOM of 123.37fJ/conversion-step and 36.55fJ/conversion-step,respectively.
The design, fabrication and measurements of an ultra-broadband power amplifier based on GaN HEMT technology which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper.A TGF2023-2-02 GaN HE...
详细信息
The design, fabrication and measurements of an ultra-broadband power amplifier based on GaN HEMT technology which operates in the frequency ranging from 3 GHz to 8 GHz, is presented in this paper.A TGF2023-2-02 GaN HEMT chip from TriQuint is adopted. The amplifier is designed by using a frequency compensation and multi impedance broadband matching approach for both input and output networks. And a sector micro strip line is implemented in the input matching network to achieve the wideband higher gain features. The measured results show that the amplifier module provided more than 11 dB power gain over 3-8GHz. The saturated output power is 37.3 dBm under DC bias of Vds=28 V, Vgs=-2.53 V at the frequency of 5GHz.
The research of a two stage ultra- broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based...
详细信息
The research of a two stage ultra- broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based on 0.25 um GaN technology are respectively adopted in driver stage and power stage. A frequency compensation and multi-side impedance matching approach are employed in such a way that simultaneously provides appropriate output power and optimal wideband matching. And a fan shaped micro strip line is implemented in the input matching network of the driver stage to achieve broadband impedance transformer. It has been observed that 15-30 W output power with minimum small signal gain of 19.9 dB is demonstrated in the entire band.
An even harmonic mixer (EHM) with a resonant circuit is designed in this paper. The proposed mixer employs a current reuse circuit in the rf input stage to improve its linearity and conversion gain, and uses the doubl...
详细信息
The research of a two stage ultra-broadband power amplifier based on GaN HEMT which operates in the frequency ranging from 3 to 8 GHz, is presented in this paper. The power devices TGF2023-2-02 and TGF2023-2-10 based ...
详细信息
A low phase noise CMOS LC VCO (Voltage controlled oscillator) for UHF rfID (Radio Frequency Identification) reader is designed. The quadrature output differential signal is achieved through Source-Coupled-Logic freque...
详细信息
暂无评论