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P-13.4: Dual-Molecule Hosts for Highly Efficient Green Phosphorescent Organic Light-Emitting Diodes with Low Efficiency Roll-Off

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SID Symposium Digest of Technical Papers 2022年第S1期53卷

作者： Rongrong Xia Ke Wang Jianfeng Guo Hengdan Wang Zhen Zhang Zixing Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd. Shanghai 200072 China

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Impact of Thickness in Ultra-Thin Ald-Processed HfO2 Gate Dielectric on the Performance of Low-Operating Voltage Thin-Film Transistors

SSRN

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SSRN 2024年

作者： Chen, Minyu Chen, Huimin Solano, Eduardo Merino, Danile Hermida Hua, Wenqiang Ding, Xingwei Wei, Bin Liao, Yingjie Wu, Bing Microelectronic R&D Center School of Mechanical & Electronic Engineering and Automation Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China Laboratory CNRS ERL 7004 University of Technology of Troyes 12 rue Marie Curie Troyes10004 Cedex France NCD-SWEET beamline ALBA Synchrotron Cerdanyola del Vallès Barcelona08290 Spain Shanghai Advanced Research Institute Chinese Academy of Sciences 201210 China 71 Avenue Des Martyrs CS 40220 Grenoble38043 France Magnetic Resonance Research Center Institute for Molecules and Materials Radboud University Nijmegen Netherlands

The effective reduction in the thickness of the metal gate while retaining its defect-free morphology and high dielectric properties is of great interest for producing low-power-consumption and high-performance thin film transistors (TFTs). In this study, a series of ultrathin hafnium dioxide (HfO2) coating layer with different thickness were prepared by atomic layer deposition (ALD) as TFT dielectrics. In XPS analyses, it was observed that the ratio of HfOx to HfO2 decreases with the increasing thickness of the HfO2 layer. Concurrently, the ratio of O species outside HfO2 also decreases as the thickness of the HfO2 layer increases. These HfO2 films were further examined by grazing incidence small and wide-angle x-ray scattering (GISAXS/GIWAXS), atomic force microscope (AFM) and X-ray to understand the impact of these films’ thickness on their morphological and topological properties. Afterwards, the dielectric properties of all these films were analyzed by the impedance measurement, it was found that the optimized 10 nm HfO2 thin film can exhibit a low-leakage current density of 13 nA cm−2 at 1 V and a permittivity of 5.98. Finally, the as-fabricated ZnO TFT with a 10 nm HfO2 gate dielectric layer was found to be able to operate at an ultra-low voltage of -1.59 V with a very high current on/off ratio, which is larger than 106. This result demonstrates the critical importance in controlling the thickness of dielectric layer to achieving high-performance TFTs and its profound potential in the applications of low-power consumption microelectronics. © 2024, The Authors. All rights reserved.

关键词： Thin films

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Enhanced Intra/Intermolecular Charge Transfer for Efficient Multilevel Resistive Memory

SSRN

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SSRN 2022年

作者： Dong, Qingchen Cheng, Xiaozhe Lian, Hong Yao, Lingling Xia, Weizhen Han, Jinba Wong, Wai-Yeung MOE Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology 79 Yingze West Street Taiyuan030024 China MOE Key Laboratory of Advanced Display and System Applications Shanghai University 149 Yanchang Road Jingan District Shanghai200072 China School of Mechanical & Electronic Engineering and Automation Shanghai University 99 Shangda Road Baoshan District Shanghai200444 China Hung Hom Hong Kong The Hong Kong Polytechnic University Shenzhen Research Institute Shenzhen518057 China

Adjustment of molecular structure can effectively improve the organic memory device behaviors due to the optimization of intra/intermolecular interaction and molecular packing motif. However, the intrinsic mechanism of how intermolecular interaction and molecular packing motif affect the device performance needs to be further explored. Herein, we synthesized four new small molecules (X-TEBT) by introducing the alkynyl π bridges and different substituents (X = H, CN, tBu, OMe) into the backbone of conjugated donor–acceptor molecules, namely, TEBT , CN-TEBT, tBu-TEBT and OMe-TEBT, for solution-processed organic resistive memory. All memory devices displayed nonvolatile write-once-read-many-times (WORM) behaviors with low threshold voltage ( V th ), high production yield, and good thermal stability. The champion device ( tBu-TEBT ) exhibits ternary WORM property with the highest ON2/ON1/OFF ratio and the lowest V th1 (1.6 V) and V th2 (2.4 V). More importantly, the single crystal structure of t Bu-TEBT was successfully obtained which helps us analyze the origin of the physical mechanism of resistive switching behavior and establish a common structure-property relationship for high performance organic memory. Its excellent properties enable us to perform logic gates and information display functions which offer possibilities as smart sensor in Internet of Things (IoT) application. © 2022, The Authors. All rights reserved.

关键词： Logic gates

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Tailoring memory performance via engineering conjugated bridges in benzo[c]thiadiazole based donor–acceptor small molecules

ChemPhysMater

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ChemPhysMater 2025年

作者： Wang, Xianglin Lian, Hong Zhao, Liang Qin, Zhitao Yang, Yongge Xiao, Tianxiao Wang, Shuanglong Dong, Qingchen MOE Key Laboratory of Advanced Display and System Applications Shanghai University No.149 Yanchang Road Jingan District Shanghai 200072 China School of Mechanical & Electronic Engineering and Automation Shanghai University No.99 Shangda Road Baoshan District Shanghai 200444 China School of Microelectronics Shanghai University No. 235 Chengbei Road Jiading District Shanghai 201800 China MOE Key Laboratory of Interface Science and Engineering in Advanced Materials Taiyuan University of Technology No.79 Yingze West Street Taiyuan 030024 China Faculty of Informatics and Engineering The University of Electro-Communications Tokyo 182-8585 Japan Department of Electronic Engineering The Chinese University of Hong Kong New Territories Hong Kong 999077 China

Tuning the conjugated bridges between the electron-donor and electron-acceptor moieties plays a crucial role in enhancing the memristive properties of organic materials, yet it is rarely reported. Herein, we designed and synthesized four donor–acceptor (D-A) organic small molecules, namely 4,7-bis(4-((9H-fluoren-9-ylidene)(phenyl)methyl)phenyl)benzo[c][1,2,5]thiadiazole (DF-BT), 4,7-bis((4-((9H-fluoren-9-ylidene)(phenyl)methyl)phenyl)ethynyl)benzo[c][1,2,5]thiadiazole (DF-ynl-BT), 4,7-bis(5-(4-((9H-fluoren-9-ylidene)(phenyl)methyl)phenyl)thiophen-2-yl)benzo[c][1,2,5]thiadiazole (DF-Th-BT), and 4,7-bis((5-(4-((9H-fluoren-9-ylidene)(phenyl)methyl)phenyl)thiophen-2-yl)ethynyl)benzo[c][1,2,5]thiadiazole (DF-Th-ynl-BT), featuring unique conjugated bridges. These molecules were employed as active layers in resistive random-access memory (RRAM) devices to systematically investigate the influence of conjugation bridges on the electrical parameters. The results revealed that devices based on DF-BT, DF-ynl-BT, and DF-Th-BT exhibited write-once-read-many-times (WORM) characteristics, while the DF-Th-ynl-BT-based device demonstrated stable Flash-type switching behavior. Compared to DF-BT, memory devices utilizing DF-ynl-BT, DF-Th-BT, and DF-Th-ynl-BT, which incorporate additional conjugated bridges, exhibited nonvolatile memory properties with reduced threshold voltages, an improved ON/OFF current ratio, enhanced stability, and better uniformity. These findings demonstrated that tailoring the conjugated bridges in D-A molecules can effectively modulate resistive memory behavior and enhance device performance. Furthermore, the DF-Th-ynl-BT-based device was successfully integrated into logic gate circuits and display functions, highlighting its significant potential for applications in artificial intelligence (AI) neural networks. © 2025

关键词： Charge transfer Conjugated bridge Flash Memory device WORM

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Electro-optical performance of OLED with MEH-PPV fabricated by solution process 26

Electro-optical performance of OLED with MEH-PPV fabricated ...

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26th International display Workshops, IDW 2019

作者： Lee, Seok Je Yao, Fangnan Lee, Seung Il Jin, Cao Kim, Woo Young Moon, C.-B. Jhun, Chul Gyu Department of Electronic Display Engineering Hoseo University Asan31499 Korea Republic of Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai200072 China

ISBN: (纸本)9781713806301

We investigated the effects of solvents and concentration on the electro-optical performance of the organic light emitting diode (OLED) fabricated by the solution process. From the experimental results, we optimized the fabrication method of it and we figure out the underlying mechanism of carrier flow by the trap state. © 2019 ITE and SID.

关键词： Fabrication

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Two-dimensional materials for future information technology: status and prospects

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Science China(Information Sciences) 2024年第6期67卷 1-147页

作者： Hao QIU Zhihao YU Tiange ZHAO Qi ZHANG Mingsheng XU Peifeng LI Taotao LI Wenzhong BAO Yang CHAI Shula CHEN Yiqi CHEN Hui-Ming CHENG Daoxin DAI Zengfeng DI Zhuo DONG Xidong DUAN Yuhan FENG Yu FU Jingshu GUO Pengwen GUO Yue HAO Jun HE Xiao HE Jingyi HU Weida HU Zehua HU Xinyue HUANG Ziyang HUANG Ali IMRAN Ziqiang KONG Jia LI Qian LI Weisheng LI Lei LIAO Bilu LIU Can LIU Chunsen LIU Guanyu LIU Kaihui LIU Liwei LIU Sheng LIU Yuan LIU Donglin LU Likuan MA Feng MIAO Zhenhua NI Jing NING Anlian PAN Tian-Ling REN Haowen SHU Litao SUN Yue SUN Quanyang TAO Zi-Ao TIAN Dong WANG Hao WANG Haomin WANG Jialong WANG Junyong WANG Wenhui WANG Xingjun WANG Yeliang WANG Yuwei WANG Zhenyu WANG Yao WE... Department of Applied Physics The Hong Kong Polytechnic University Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan University College of Integrated Circuits Zhejiang University Shenzhen Geim Graphene Center Shenzhen Key Laboratory of Layered Materials for Value-Added ApplicationsTsinghua-Berkeley Shenzhen Institute & Institute of Materials ResearchTsinghua Shenzhen International Graduate SchoolTsinghua University State Key Laboratory of Extreme Photonics and Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZijingang CampusZhejiang University National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications i-LabSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO)Chinese Academy of Sciences College of Chemistry and Chemical Engineering Hunan University Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education) Department of PhysicsRenmin University of China School of Integrated Circuits Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University School of Electronic Science and Engineering Nanjing University The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of GrapheneSchool of MicroelectronicsXidian University Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education School of Physics and TechnologyWuhan University School of Integrated Circuits Huazhong University of Science and Technology Center for Nanochemistry (CNC) Beijing Science and Engineering Center for NanocarbonsBeijing National Laboratory for Molecular SciencesCollege of Chemistry and Molecular EngineeringPeking University State Key Laboratory for Artificial Microstruct

Over the past 70 years, the semiconductor industry has undergone transformative changes,largely driven by the miniaturization of devices and the integration of innovative structures and materials. Two-dimensional(2D) materials like transition metal dichalcogenides(TMDs) and graphene are pivotal in overcoming the limitations of silicon-based technologies, offering innovative approaches in transistor design and functionality, enabling atomic-thin channel transistors and monolithic 3D integration. We review the important progress in the application of 2D materials in future information technology, focusing in particular on microelectronics and optoelectronics. We comprehensively summarize the key advancements across material production, characterization metrology, electronic devices, optoelectronic devices, and heterogeneous integration on silicon. A strategic roadmap and key challenges for the transition of 2D materials from basic research to industrial development are outlined. To facilitate such a transition, key technologies and tools dedicated to 2D materials must be developed to meet industrial standards, and the employment of AI in material growth, characterizations, and circuit design will be essential. It is time for academia to actively engage with industry to drive the next 10 years of 2D material research.

关键词： two-dimensional (2D) materials information technology production technology standardization of characterization microelectronic devices optoelectronic devices multi-functional integration

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A New Low-power Pixel Circuit for OLEDoS Microdisplay

A New Low-power Pixel Circuit for OLEDoS Microdisplay

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17th China International Forum on Solid State Lighting &2020 International Forum on Wide Bandgap Semiconductors (第十七届中国国际半导体照明论坛暨2020国际第三代半导体论坛)

作者： Deng Hao Guo Aiying Ran Feng Microelectronic Research & Development Center Shanghai UniversityShanghai200444China Key Laboratory of Advanced Display and System Applications Shanghai UniversityShanghai200072 China

ISBN: (数字)9780738111889

ISBN: (纸本)9781665419642

In order to solve the problem of high bandwidth data volume and low power consumption of OLEDoS microdisplay panels,this paper proposes a new type of digital low-power pixel *** driving circuit includes a plurality of pixel driving units,which can store multi-pixel bit information at one time,thereby reducing the amount of data read *** with the traditional digital pixel circuit,the proposed circuit can skip the grayscale data writing process when the picture is still or the rate of change is low,thus reducing the data flow and power consumption.

关键词： Microdisplays Organic light emitting diodes Writing MOSFET Brightness Power demand Integrated circuit modeling

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P-13.3: Thermally Activated Delayed Fluorescent Host for Highly Efficient and Stable Deep-Red OLEDs

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SID Symposium Digest of Technical Papers 2022年第S1期53卷

作者： Ke Wang Rongrong Xia Jianfeng Guo Zhen Zhang Zixing Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd. Shanghai 200072 P. R. China

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Influence of reaction parameters on the luminescence properties of monodisperse NaGd（1-x-y）（WO4）2:xEu3+,yTb3+ phosphor by molten salt synthesis

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Journal of Rare Earths 2018年第1期36卷 49-57页

作者： Weiqin Xiao Luqiao Yin Jipeng Zhou Fang Lei Ying Shi Jianjun Xie Lei Zhang School of Materials Science and Engineering Shanghai University Key Laboratory of Advanced Display and System Applications Ministry of Education (Shanghai University)

Eu3+activated and Eu3+, Tb3+co-activated monodisperse sodium double tungstates NaGd（WO4）2 phosphors were prepared by molten salt method at 750 ℃ for 10 h using NaCl as a flux. The crystal structure and morphology of the as-synthesized phosphors were measured by XRD and SEM, respectively. The photoluminescence properties were characterized by PL spectra, decay lifetime and CIE. The presence of NaCl plays an important role in the morphology and luminescence properties. In this work,NaCl and one of the raw material Na2CO3in a certain proportion will form a low eutectic salt to decrease the reaction temperature and benefit the formation of monodisperse NaGd（WO4）2crystals. The color of Eu3+and Tb3+co-doped NaGd（WO4）2phosphors can be tuned from creamy white to orange, red and green by adjusting the doping concentration of rare earth ions, since the emission contain the broad blue-green emission origin from NaGd（WO4）2host and characteristic red and green emission origin from Eu3+and Tb3+ions. The electroluminescent spectra and CIE measurement shows that the LED device with NaGd（1-x）（WO4）2:xEu3+（x = 0.24） phosphor can be excited by 365 nm and 380 nm LED chip, and their CIE coordinate is（x = 0.45, y = 0.45） and（x = 0.36, y = 0.37）, Ra is 80.3 and 86.3, Tcis 3196 and4556 K, respectively. As a single-component phosphor, NaGd（WO4）2:Eu3+,Tb3+have potential application in UV-pumped WLEDs.

关键词： NaGd（1-x-y）（WO4）2:xEu3+ yTb3+ Molten salt method Single component WLEDs White light

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Aqueous Sr-doped In2O3 TFT stability under negative bias illumination stress

Aqueous Sr-doped In2O3 TFT stability under negative bias ill...

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International Conference on display Technology, ICDT 2019

作者： Zhou, Youhang Li, Jun Yang, Yaohua Li, Xifeng Zhang, Jianhua School of Material Science and Engineering Shanghai University Shanghai Jiading China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China

ISBN: (纸本)9781510896161

In this paper, the Sr-doped In2O3 thin film is fabricated by aqueous route and the stability of InSrO thin film transistor under negative bias illumination stress (NBIS) is investigated. It is found that Sr can effectively improve the stability of In2O3 TFTs under NBIS, which is due to the reduction of oxygen vacancies. The XPS measurement is tested to analyze the variation of oxygen vacancy concentration. The density of states is calculated to further confirm the decrease of total trap state caused by Sr doping. © 2019, John Wiley and Sons Inc. All rights reserved.

关键词： Thin film transistors

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