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Failure Analysis of Glass Transition Temperature of LED Insulation Layer

Failure Analysis of Glass Transition Temperature of LED Insu...

16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors (第十六届中国国际半导体照明论坛暨2019国际第三代半导体论坛)

作者： Yibin Wang Fang Fang Jing Wu Kaixuan Lin Tingting Xu Weiqing Liang Luqiao Yin School of Materials Science and Engineering Shanghai UniversityShanghai 200072China Key Laboratory Gold Medal Analytical & Testing Group Key Laboratory of Advanced Display and System Applications Shanghai UniversityMinistry of Education

ISBN: (数字)9781728157566

ISBN: (纸本)9781728157573

With the development of light-emitting diodes(LEDs)technology,the number of LEDs chips in high-power LEDs devices is increasing,and the use of LEDs continues to expand,the reliability has become the key to its widespread *** the LEDs device fails,the failure analysis of the device can effectively derive the mechanism and condition of the device failure,which has a significant effect on enhancing the reliability of the *** this paper,by analyzing the instantaneous voltage curve and thermal of the failed device,it can be concluded that when the operating current of the LEDs device is large,due to the poor thermal conductivity of the insulating layer,the insulating layer of the device is in the vitrification transition temperature for a long *** shape of the insulating layer is easily changed or even burned to cause delamination,resulting in LEDs failure.

关键词： Light emitting diodes Insulation Light sources Reliability Failure analysis Copper Aluminum

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A real-time pedestrian detection model adopted by high-performance ANS-DPM

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Journal of Computers (Taiwan) 2019年第2期30卷 240-251页

作者： Guo, Ai-Ying Ran, Feng Zhang, Jian-Hua Xu, Mei-Hua Gong, Lu-Ming Shen, Hua-Ming Key Laboratory of Advanced Display System Applications Ministry of Education Shanghai China Microelectronic Research and Development Center Shanghai China School of Mechatronics Engineering and Automation Shanghai University Shanghai China

In order to fulfill the real-time pedestrian detection system, it is difficult to balance the higher detection rate and greater detection speed at the same time. Therefore, this paper proposed an Adaptive Neighborhood Selection-Deformable Part Model (ANS-DPM) as a novel pedestrian feature operator to solve this problem. ANS-DPM adopts the adaptive feature zones to extract the pedestrian features based on the relationship between features ex-traction score with the experience threshold to decrease the whole calculation and upgrate. Meanwhile, the inner-layer and inter-layer constraint are introduced into the ANS-DPM to deal with the model of robustness. Finally, ANS-DPM with Latent-SVM constructs the pedestrian detection system and experiment result shows that the ANS-DPM can improve the feature rate, while the pedestrian detection system can detect 30 fps to satisfy the real-time detection system. © 2019 Computer Society of the Republic of China. All rights reserved.

关键词： Feature extraction

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High-quality OLED Micro-display aided by PGL-SCS operator

High-quality OLED Micro-display aided by PGL-SCS operator

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International Conference on display Technology, ICDT 2018

作者： Guo, Aiying Ran, Feng Zhang, Jianhua Xu, Meihua Shen, Huaming Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai China Microelectronic Research and Development Center Shanghai China School of Mechatronics Engineering and Automation Shanghai China

ISBN: (纸本)9781510867659

In the high-quality OLED micro-display, it is difficult to balance the faster frame refresh rate and higher resolution frame. In order to solve this problem, this paper propose a high-efficient PGL-SCS (Particle Gray Level-Scan Control Strategy) operator as the new scan strategy, which is based on the digital fractal scan strategy. This paper firstly introduces the theory model of PGL-SCS operator, which based on the relationship between sub-space code sequences and bit code sequences for different gray levels. Second, the theory performance of PGL-SCS is analysed. At last, the PGL-SCS operator is tested using the IP core and self-build HD OLED micro-display system. The experiments shows that the PGL-SCS operator can obtain 100% scan utilization and a significant decrease in the system clock frequency, compared with the traditional scan methods. With the proposed PGL-SCS there is no need of using high-speed IC circuits to realize the high-resolution and high-quality OLED micro-display system. © 2018 SID.

关键词： display devices

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Efficiency enhancement in DIBSQ：PC71BM organic photovoltaic cells by using Liq-doped Bphen as a cathode buffer layer

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Frontiers of Materials Science 2017年第3期11卷 233-240页

作者： Guo CHEN Changfeng SI Pengpeng ZHANG Kunping GUO Saihu PAN Wenqing ZHU Bin WEI Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai 200072 China

We have improved the photovoltaic performance of 2,4-bis[4-（N,N- diisobutylamino）-2,6-dihydroxyphenyl] squaraine：[6,6]-phenyl C71-butyric acid methyl ester （DIBSQ：PC71BM） organic photovoltaic （OPV） cells via incorporating Liq-doped Bphen （Bphen-Liq） as a cathode buffer layer （CBL）. Based on the Bphen-Liq CBL, a DIBSQ：PC71BM OPV cell possessed an optimal power conversion efficiency of 4.90%, which was 13% and 60% higher than those of the devices with neat Bphen as CBL and without CBL, respectively. The enhancement of the device performance could be attributed to the enhanced electron mobility and improved electrode/active layer contact and thus the improved photocurrent extraction by incorporating the Bphen-Liq CBL. Light-intensity dependent device performance analysis indicates that the incorporating of the Bphen-Liq CBL can remarkably improve the charge transport of the DIBSQ：PC71BM OPV cell and thus decrease the recombination losses of the device, resulting in enhanced device performance. Our finding indicates that the doped Bphen-Liq CBL has great potential for high-performance solution-processed small-molecule OPVs.

关键词： organic photovoltaic cells squaraine cathode buffer layer power conversion efficiency solution-process

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Electrical degradation behavior in metal oxide thin film transistor under negative bias-illumination stress

Electrical degradation behavior in metal oxide thin film tra...

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International Conference on Optical Communications and Networks (ICOCN)

作者： Youhang Zhou Jun Li Yaohua Yang Qi chen Jianhua Zhang Zhilin Zhang School of Material Science and Engineering Shanghai University Jiading Shanghai People’s Republic of China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai People’s Republic of China

The electrical degradation behavior in metal oxide thin film transistor (TFT) under negative bias-illumination stress (NBIS) is one of the biggest obstacles for its applications in flat panel display. In order to solve this issue, Sr and N are doped in In 2 O 3 thin film and significantly improve the NBIS stability of In 2 O 3 TFT. In addition, the doping of N can also reduce the degradation in electrical performance caused by Sr doping. The XPS of SrInON thin film is tested to prove the reduction of the oxygen vacancy.

关键词： Thin film transistors Doping Thermal stability Stress Lighting Degradation Stability analysis

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Correction: Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes

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Journal of Materials Chemistry C 2020年第45期8卷 16241-16241页

作者： Piaoyang Shen Xiaomin Li Fan Cao Xingwei Ding Xuyong Yang Key Laboratory of Advanced Display and System Applications of Education of Ministry Shanghai University 149 Yanchang Road Shanghai 200072 P. R. China

Correction for ‘Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes’ by Piaoyang Shen et al., J. Mater. Chem. C, 2018, 6, 9642–9648, DOI: 10.1039/C8TC03155J.

Correction for ‘Highly efficient, all-solution-processed, flexible white quantum dot light-emitting diodes’ by Piaoyang Shen et al., J. Mater. Chem. C, 2018, 6, 9642–9648, DOI: 10.1039/C8TC03155J.

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The Effect of Glass Frit Paste Levelling Property on Encapsulation

The Effect of Glass Frit Paste Levelling Property on Encapsu...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Rui Tian Luqiao Yin Yi Li Jianhua Zhang Yibin Wang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China

Laser-assisted glass frit bonding encapsulation (hereafter referred to as Laser bonding) is proposed for encapsulating air sensitive device that need a hermetic package with long-term stability. Laser bonding technology is a typical local non-contact heating technology, which allows temperature-sensitive devices to be used inside cell. With the excellent barrier performance, glass frit play an important role in encapsulation. Many factors such as the particles size, paste viscosity during process and unfairness of the surface morphology caused in screen printing process can cause the formation of defects in glass frit, weakening the barrier properties for blocking moisture and oxygen. We found that high saddle height difference comes out due to improper viscosity and improper printing process. In order to further verify the reliability of the glass laser encapsulation in the temperature output mode, the water vapor transmission rate (WVTR) of the encapsulated structure was tested using the active metal calcium electrical test method. Finally, we found that the lower saddle height difference is contributes to the smooth surface appearance. Furthermore the lower saddle height difference conducts to lower WVTR.

关键词： Glass Printing Calcium Bonding Encapsulation Surface morphology Surface treatment

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Synthesis of ZnO nanorods based on electrospinning technology

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Journal of Physics: Conference Series 2020年第3期1549卷

作者： Xiuzhen Lu Yongqian Sun Ziwei Jiang Maomao Zhang Yang Lin SMIT Center School of Mechatronic Engineering and Automation Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

A new method for fabrication of ZnO nanorods was reported. ZnO nanorods were synthesized by electrospinning technology and heat treatment with polyvinyl alcohol (PVA) and Zinc acetate as precursor. After heat treatment of ZnO electrospun nanofibers, ZnO nanorods were obtained. Morphology of ZnO nanorods was characterized by Scanning electron microscopy (SEM). Various morphologies, such as sphere, flower and plane composed of ZnO nanorods were observed. Transmission electron microscopy (TEM) images demonstrated ZnO nanorods are a single crystalline structure with a diameter of 100-180 nm. The hexagonal wurtzite structure of ZnO nanorods was determined by X-ray diffraction (XRD) pattern and Raman spectra.

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Laser bonding of glass and glass with constant temperature output

Laser bonding of glass and glass with constant temperature o...

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第十九届国际电子封装技术会议(ICEPT 2018)

作者： Xianliang Fu Rui Tian Jianhua Zhang Xifeng Li Luqiao Yin Yi Li School of Mechatronics and Automation Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai Univers

The glass and glass laser bonding technology is a laser cladding technology with glass frit as adhesive *** to the thermal expansion coefficient of glass and other factors,the bonding process window is *** uniform temperature field is required for glass laser *** traditional encapsulation used constant power laser is easy to lead to the unevenness of temperature field distribution and affect the quality of *** on bismuth salts glass slurry,the encapsulation method combining low temperature laser scanning and high temperature laser scanning is proposed under the constant temperature *** the glass encapsulation effect under different output temperature of the laser technology,the process of laser bonding is *** sample with no crack on the surface of the laser bonding has *** the same time,the water vapor transmission rate(WVTR)of encapsulation structure is 2.0875 × 10-5 g/m2·day with the electrical Ca test.

关键词： laser temperature glass and glass laser bonding water vapor transmission rate (WVTR)

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Band Structure Engineering of Black Phosphorus/Graphene/MoS2 van der Waals Heterojunctions for Photovoltaic and Optoelectronic Device Application

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Journal of Physics: Conference Series 2021年第2期1865卷

作者： Wenhuan Zhu Lingwei Kong Wei Long Xianglei Shi Dayong Zhou Lijie Sun Lihua Zhou Guiting Yang Xiaodong Liu Hai Liu Maolin Bo Xiaoqiang Hou Department of Micro/Nano Electronics School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai China State Grid Nanchong Power Supply Company Nanchong China State Key Laboratory of Space Power-Sources Technology Shanghai China Shanghai Institute of Space Power-Sources Shanghai China Guizhou Space Appliance Co. Ltd. Guizhou China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology (EBEAM) of Chongqing Yangtze Normal University Chongqing China

In this paper, we study the band structure engineering of black phosphorus/graphene/MoS2 (BP/graphene/MoS2) van der Waals heterojunctions based on ab initio simulations. The density of state and charge density of BP/MoS2, bilayer-BP/MoS2, bilayer-BP/graphene/MoS2 and graphene/bilayer-BP/MoS2 heterojunctions are also investigated. It is found that the bandgaps of these four heterojunctions are smaller than the case of single layer BP or MoS2. When graphene is inserted into or stacked upon BP and MoS2 layers, the heterojunction can obtain a minimum bandgap and a higher density of state distribution. In the differential charge density diagram, electrons over the carbon, sulfur and phosphorus atoms are lost from those corresponding parts. These investigations based on the band structure engineering of 2D van der Waals heterojunctions can provide an effective guidance to manufacture the future nanoscale high performance photovoltaic and optoelectronic devices.

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