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Electronic Components and Technology Conference (ECTC)

作者： Cong Yue Yan Zhang Johan Liu Masahiro Inoue Sijia Jiang Zhaonian Cheng Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center School of Mechatronics Engineering and Automation Shanghai University Shanghai China SMIT Center Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden The Institute of Scientific and Industrial Research Osaka University Osaka Japan

Thermal interface materials (TIMs), including thermal conductive adhesives (TCAs), grease, phase change materials (PCMs) and thermal pads, are widely used in thermal management for electronics system. In this work, a bimodal thermal conductive adhesive (b-TCA) composed of epoxy matrix and silver fillers were developed. The silver fillers consist of silver flakes and silver particles. The specimens have been made with the same filler loading fraction, possessing different ratios of silver flake portion to silver particle one to study the filler geometry effects. The thermal conductivity in vertical and in-plane direction were tested, also the electrical resistance in in-plane direction has been measured. Meanwhile, the numerical simulation was carried out in addition to the experiment. An improved cubic cell model (CCM) was developed to calculate the effective thermal conductivity of the considered b-TCA. Both the experiment and the simulation show the anisotropic thermal conductive property in the b-TCA, but this anisotropy decreased with the increase of silver particle portion in the total filler. And the electrical conductivity also decreased with the increase of silver particles.

关键词： Thermal conductivity Geometry Conductive adhesives Silver Thermal management of electronics Phase change materials Anisotropic magnetoresistance Conducting materials Thermal management Thermal resistance

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Development of a test platform for thermal characterization using through-silicon-via technology

Development of a test platform for thermal characterization ...

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IMAPS Nordic Annual Conference 2009

作者： Fu, Yifeng Wang, Teng Liu, Johan Department of Microtechnology and Nanoscience SMIT Center and Bionano Systems Laboratory Chalmers University of Technology SE-412 96 Göteborg Sweden SHT Smart High Tech AB Nordgårdsvägen 19 428 34 Kållered Sweden FOAB Elektronik AB St Jörgens väg 8 422 49 Hisingsbacka Sweden Key Laboratory of Advanced Display and System Applications and SMIT Center Yan Chang Campus Shanghai University No. 149 Yan Chang Road Shanghai 200072 China

ISBN: (纸本)9781622761838

In order to look into the heat transfer mechanism and improve the thermal performance of an electronic component, a thermal test platform has been designed and fabricated. A series of micro-machining processes have been developed to make the test platform. The Through-Silicon-Via technique using Cu as a conductor has been used to fabricate the temperature sensors in order to realize an in-situ temperature monitoring on a thermal interface. Pt-based temperature sensor array has been deposited on the chip and calibrated by an industry standard RTD. Results show that the Pt sensors work well which demonstrates the successful deposition of temperature sensing materials and good interconnection between through-hole vias and IC components. This indicates that the test platform can be used for thermal interface material characterization as well as 3D electronics reliability studies. Copyright © (2009) by International Microelectronics and Packaging Society, Europe.

关键词： Three dimensional integrated circuits

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The effect of thermal cycling on nanoparticle reinforced composite lead-free solder

The effect of thermal cycling on nanoparticle reinforced com...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Si Chen Zhaonian Cheng Johan Liu Yulai Gao Qijie Zhai Key Laboratory of Advanced Display and System Applications & SMIT Center School of Automation and Mechanical Engineering Shanghai University Shanghai China SMIT Center & Bionano Systems Laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden School of Materials Science and Engineering Shanghai University Shanghai China

The effects of thermal cycling on shear strength and fracture mode of the nanosized Sn-3.0Ag-0.5Cu particulates reinforced Sn-58Bi composite solder were investigated in this paper. By using a self developed top-down method named Consumable-electrode Direct Current Arc technique, the Sn-3.0Ag-0.5Cu nanoparticles were successfully manufactured. The primary particle size of Sn-3.0Ag-0.5Cu nanoparticles ranged from 20nm to 80nm. Sn-3.0Ag-0.5Cu nanoparticles with different weight percentages were mixed into commercial Sn-58Bi solder paste in order to develop a composite solder paste which is lead-free and possess high strength and low melting point. Following the conventional surface-mount technology process, the 1206 chip resistor and ENIG/Cu pad were joined by the composite solder. Scanning electron microscope, transmission electron microscope and optical microscope were employed to observe the morphology of nanoparticles, microstructure of solder matrix, fracture mode after shear test and crack after thermal cycling. The experimental results indicated that before thermal cycling all composite solders' shear strength increased greatly compared to Sn-58Bi solder making them comparable to Sn-3.0Ag-0.5Cu solder. The fracture surfaces of all composite solder joints occurred at the interface between the solder matrix and the resistor termination. After thermal cycling, the shear strength of the composite solders was at a constant value. However, when the weight percentages of Sn-3.0Ag-0.5Cu nanoparticles exceeded a certain value, the shear strength of composite solder joints decreased rapidly and the case of solder brittle fracture increased as the nanoparticles content increased.

关键词： Environmentally friendly manufacturing techniques Lead Nanoparticles Optical microscopy Scanning electron microscopy Transmission electron microscopy Resistors Soldering Surface-mount technology Electron optics

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FEM simulation of bimodal and trimodal thermally conductive adhesives

FEM simulation of bimodal and trimodal thermally conductive ...

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IEEE Conference on Nanotechnology

作者： Nabi Nabiollahi Johan Liu Zhu Hilli Yan Zhang Yue Cong Zhaonian Cheng Masahiro Inoue Bio Nano science laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden Key Laboratory of Advanced Display and System Applications School of Mechatronics Engineering and Automation Ministry of Education and SMIT Center Shanghai University Shanghai China The Institute of Scientific and Industrial Research Osaka University Osaka Japan

ISBN: (纸本)9781424448326

A simulation with combination of a finite element analysis of Thermally Conductive Adhesive and contact resistance modeling has been presented. Using ANSYS and MATLAB software thermal conductivity and electrical resistivity of Conductive Adhesives with Ag filler and Epoxy matrix has been calculated. Thermally Conductive Adhesives are used as a thermal interface material to provide a better conduction and heat transfer between two surfaces. The results show that the conductivity dependency is relatively high for different filler shape and alignment. Discussed models are bimodal, Ag flakes and Ag spherical micro particles and trimodal with Multi-WallCNT nano particles.

关键词： Thermal conductivity Conductive adhesives Thermal resistance Mathematical model Analytical models Finite element methods Contact resistance MATLAB Electric resistance Conducting materials

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A study of the heat transfer characteristics of the micro-channel heat sink

A study of the heat transfer characteristics of the micro-ch...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Shun Wang Yan Zhang Yifeng Fu Johan Liu Xiaojing Wang Zhaonian Cheng Key Laboratory of Advanced Display and System Applications Ministry of Education SMIT Center School of Mechatronics Engineering and Automation Shanghai University Shanghai China SMIT Center & Bionano Systems Laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden School of Mechatronics Engineering and Automation Shanghai University Shanghai China

Micro-channels are generally regarded as an effective method for the heat transfer in electronic products, and much effort has been put into improving their capacities. At the same time, carbon nanotubes have shown great potential in the field of heat transfer. This paper focuses on the microchannel heat sinks combined with carbon nanotubes. A series of 3D models had been created, and the heat transfer characteristics were studied. Two kinds of numerical model were carried out by using Fluent. One model contained the whole micro-channel cooler structure, and the other was a simplified model with only one channel taken into simulation. A comparison of results by the two models indicates a 19.5% variation in the maximum temperature on the fins. Furthermore, five micro-channel cooler structures were constructed with different fin widths. The simulation results showed that with the decrease in the fin width, heat transfer ability was improved. This is attributed to the anisotropic thermal conductivity of the fin arrays.

关键词： Heat sinks Heat transfer Thermal conductivity Carbon nanotubes Heat engines Thermal expansion Computational modeling laboratories displays Mechatronics

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Multiscale delamination modeling of an anisotropic conductive adhesive interconnect based on micropolar theory and cohesive zone model

Multiscale delamination modeling of an anisotropic conductiv...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Yan Zhang Jing-yu Fan Johan Liu Key Laboratory of Advanced Display and System Applications Ministry of Education and SMIT Center School of Mechatronics Engineering and Automation Shanghai University Shanghai China Shanghai Institute of Applied Mathematics and Mechanics Shanghai University Shanghai China SMIT Center & Bionano Systems Laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden

With the trend towards high performance, portability and low cost for electronic products, the packaging density in microsystem has become higher and the components have tended to be minimal. Flip-chip technology is superior because of its high packaging density and speed signal processing. There is an increasing interest in using electrically conductive adhesives as the interconnection material in flip-chip assembly due to its fine pitch I/Os, fewer number of processing steps, lower process temperature and environmental-friendliness. The interconnect behavior is a key issue in the long-term reliability of the system performance. In the present paper, a multiscale interface model was developed on the basis of micropolar theory, in which a cohesive zone model was also introduced to describe the possible delamination process that might occur when the interconnection was subjected to the thermal cycling loading. The delamination model was implemented using finite element method, and the numerical analysis for the reliability of an anisotropic conductive adhesive interconnect was made as the model application.

关键词： Delamination Anisotropic magnetoresistance Conductive adhesives Electronics packaging Costs Signal processing Conducting materials Assembly Temperature system performance

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Wigner-Ville distribution and cross Wigner-Ville distribution of noisy signals

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Journal of systems Engineering and Electronics 2008年第5期19卷 1053-1057页

作者： Chen Guanghua Ma Shiwei Liu Ming Zhu Jingming Zeng Weimin Key Laboratory of Advanced Display and System Applications Ministry of Education & Microelectronic Research and Development Center Shanghai Univ. Shanghai 200072 P. R. China

The Wigner-Ville distribution （WVD） and the cross Wigner-Ville distribution （XWVD） have been shown to be efficient in the estimation of instantaneous frequency （IF）. But the statistical result of the IF estimation from XWVD peak is much better than using WVD peak. The reason is given from a statistical point of view. Theoretical studies show that XWVD of the analyzed signal can be estimated from XWVD of the noise-contaminated signal. The estimation is unbiased, and the variance is equal to that of noise. In this case, WVD cannot be estimated from W-VD of the noise-contaminated signal. Therefore, higher SNR is required when WVD is used to analyze signals.

关键词： Wigner-Ville distribution cross Wigner-Ville distribution instantaneous frequency expectation variance.

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An efficient VLSI architecture of sub-pixel interpolator for AVS encoder

An efficient VLSI architecture of sub-pixel interpolator for...

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2008 9th International Conference on Signal Processing, ICSP 2008

作者： Guanghua, Chen Xiaoli, Zhang Ming, Liu Jingming, Zhu Shiwei, Ma Weimin, Zeng Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

ISBN: (纸本)9781424421794

Interpolation is the main bottleneck in AVS real-time high definition video encoder for its high memory bandwidth and large calculation complexity caused by the new coding features of variable block size and 4-tap filter. In this paper, an efficient VLSI architecture of interpolation supporting AVS Baseline@L4 is presented. Vertical redundant data reuse, horizontal redundant data reuse and sub-pixel data reuse schemes are presented to reduce memory bandwidth and processing cycle. The separated 1-D interpolation filters are used to improve throughput and hardware utilization. The proposed design is implemented on the Vertex4 XC4VLX200 field programmable gate array with operating frequency of 150MHz and can support 1080p (1920X1080) 30fps AVS real-time encoder. It is a useful intellectual property design for real-time high definition video application. © 2008 IEEE.

关键词： Pixels

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Electron mobility of 4,7-diphyenyl-1,10-phenanthroline estimated by using space-charge-limited currents

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Journal of Applied Physics 2008年第1期103卷 014509-014509-4页

作者： Khan, M.A. Xu, Wei Khizar-Ul-Haq Bai, Yu. Jiang, X.Y. Zhang, Z.L. Zhu, W.Q. Zhang, Z.L. Zhu, W.Q. Department of Materials Science Shanghai University Jiading 201800 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

The electron mobility of 4,7-diphyenyl-1,10-phenanthroline (BPhen) at various thicknesses (50-300 nm) has been estimated by using space-charge-limited current measurements. The measured bulk mobility is in excellent agreement with results from time-of-flight method. It has been observed that the electron mobility of BPhen approaches its true value when the thickness is more than 150 nm. The estimated electron mobility of BPhen at 300 nm is found to be 3.4× 10-4 cm2 V s (at 0.3 MVcm) with weak dependence on electric field. For thickness typical of organic light-emitting devices, the electron mobility of BPhen is also investigated. © 2008 American Institute of Physics.

关键词： Electron mobility

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Effects of substrate temperature on the properties of heavy Ga-doped ZnO transparent conductive film by RF magnetron sputtering

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Journal of Physics: Conference Series 2009年第1期188卷

作者： Shufang Wang Xifeng Li Jianhua Zhang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China School of Mechanical & Electronic Engineering and Automation Shanghai University Shanghai 200072 China Corresponding author

Gallium-doped zinc oxide (GZO) transparent conductive thin films were deposited on glass substrate by RF magnetron sputtering using a ceramic ZnO target with 10 wt. % Ga2O3 doped. The effects of substrate temperature on structural, electrical and optical properties of the films were investigated. X-ray diffraction (XRD) measurements indicated that GZO films were polycrystalline and strongly c-axis oriented. The surface roughness evaluated in terms of RRMS measured by atomic force microscope (AFM) was 1.8 nm for the smoothest surface obtained at 250 °C. The electrical resistivity decreases with increasing substrate temperature and the lowest resistivity obtained was 5.8×10-4 Ωcm at 350 °C. The average transmittance in the visible region was over 90%. The carrier concentration increased with substrate temperature increasing, and the highest mobility value was 22.1 cm2v-1s-1.

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