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Mitigating interfacial carrier crowding by an ultrathin LiF interlayer towards efficient and stable perovskite light-emitting diodes

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Moore and More 2024年第1期1卷 1-9页

作者： Zhang, Xiaofei Wang, Lin Kong, Lingmei Wang, Sheng Dai, Jun Jia, Guohua Yang, Xuyong Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai China Department of Physics Jiangsu University of Science and Technology Zhenjiang China School of Molecular and Life Sciences Curtin University Perth Australia Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai China

Quasi-two-dimensional (quasi-2D) perovskite-based light-emitting diodes (PeLEDs) have attracted intensive attention due to their high quantum yields, tunable emission wavelengths, and solution-processing capability, showing great potential in next-generation display and lighting applications. However, further performance enhancement in PeLEDs is severely limited by the uncontrolled transfer of charge carriers under bias, leading to crowding of interfacial carriers and severe efficiency roll-off. Herein, we insert an ultra-thin dielectric buffer layer of lithium fluoride (LiF) into the electron transport layer (ETL) to regulate the transfer dynamics of electrons and passivate the interfacial defects simultaneously. The dielectric LiF interlayer can effectively reduce the efficiency roll-off in PeLEDs by improving the charge balance through preventing the overwhelming injection of electrons. Moreover, the fluoride anions from LiF can passivate the surface defects of the perovskite film, enhancing the radiative recombination. As a result, the LiF interlayer-assisted quasi-2D PeLED presents an outstanding external quantum efficiency (EQE) of 24.03% and a maximum brightness of 30 845 cd m−2. The operational stability of the device is also extended, with a half-lifetime (T50) of 71.28 min (at an initial luminance of 1 000 cd m−2), which is 7.4-fold longer than that for the control device.

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Simulation Study on the Size Effect and Transient Characteristics of Micro-LEDs

Simulation Study on the Size Effect and Transient Characteri...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Zhuang Wu Kailin Ren Yuan An Luqiao Yin Xiuzhen Lu Aiying Guo Jianhua Zhang School of Microelectronics Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai University Shanghai China

Micro-LED is a promising candidate of the next generation display technology. The size effect caused by sidewall surface traps is a serious issue that restricts its industrialization progress. However, the current research on the size effect of micro-LED is limited to the reduce of quantum efficiency and luminous intensity with decreased pixel size, but there is few research on the mechanism of the transient switching characteristics of Micro-LED affected by sidewall surface traps. In this paper, the size effect of GaN based micro-LEDs is studied by TCAD simulation. The decrease of quantum efficiency is attributed to the depletion effect of the sidewall traps induced by dry etching, the enhancement of SRH non-radiative recombination, and the lateral current component caused by sidewall traps capturing carriers. In addition, the sidewall trap density and trap energy level of micro-LEDs with 10 μm pixel size were varied to study their influence on the transient switching characteristics of micro-LEDs. This work provides a design guideline for the process control of micro-LEDs.

关键词： Photonic band gap Dry etching Process control Switches Radiative recombination Light emitting diodes Energy states

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Partial etched AlGaN layer on p-GaN HEMT with gate field plate and drain field plate for channel temperature reduction

Partial etched AlGaN layer on p-GaN HEMT with gate field pla...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Shuang Wu Luqiao Yin Kailin Ren Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China

Self-heating effect of gallium nitride high electron mobility transistors (GaN HEMTs) has been a serious problem owing to their high-power and high-frequency operations, thus the method to optimize temperature was studied. In this work, the 2D temperature distribution model of p-GaN HEMT which has gate field plate and drain field plate is presented. Successively, etching AlGaN layer changes the two-dimensional electron gas (2DEG) density and the interface electric field between AlGaN layer and GaN buffer. The quantitative analysis of the etched region parameters which include etching length and etching depth were simulated systematically by using simulation software. The results show that etching AlGaN layer is helpful to reduce the peak temperature of active region and increase off-state breakdown voltage．

关键词： Temperature distribution Analytical models Thermal resistance HEMTs Logic gates Etching Wide band gap semiconductors

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A Novel Monolithically Integrated Structure of GaN-based Micro-LED and its Driver HEMT 18

A Novel Monolithically Integrated Structure of GaN-based Mic...

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18th China International Forum on Solid State Lighting and 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021

作者： An, Yuan Ren, Kailin Xiu, Xueying Xu, Zebin Wu, Zhuang Yin, Luqiao Zhang, Jianhua School of Microelectronics Shanghai University Key Laboratory of Advanced Display and System Applications Shanghai University Shanghai University Shanghai200444 China

ISBN: (纸本)9781665495462

In this work, a novel LED-HEMT integrated device structure with a p-GaN cap layer under the drain electrode of HEMT and one or more InGaN layers inserted between AlGaN/GaN is proposed for the monolithic integration of GaN-based Micro-LED and its driver HEMT. This structure is a promising candidate for the optoelectronic switch in high-speed visible light communications owing to its elimination of metal-interconnects and reduction of parasitic capacitance. By TCAD simulations, the distribution of radiative recombination rate in this structure is investigated and the 2-D integrals of the radiative recombination rate for various device structure designs are compared. It is concluded that the integration structure with InGaN layers provides higher radiative recombination than that without InGaN layers. Device structure parameters are optimized, including Al content in AlGaN barrier layer, In content in InGaN layers, and thickness of InGaN layers. © 2021 IEEE.

关键词： III-V semiconductors

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Efficient blue and color tunable white oled based on platinum complex

Efficient blue and color tunable white oled based on platinu...

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International Conference on display Technology, ICDT 2020

作者： Guo, Jianfeng Liao, Zhangcheng Xia, Rongrong Lin, Hong Wang, Zixing Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd. Shanghai 200072 China

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Transient Thermodynamic Simulation of Micro LED Array Bonding 20

Transient Thermodynamic Simulation of Micro LED Array Bondin...

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20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023

作者： Pan, Jinwen Zhou, Haojie Ji, Xiaoxiao Chen, Liang Yin, Luqiao Zhang, Jianhua School of Microelectronics Shanghai University Shanghai201800 China Shanghai University Ministry of Education Key Laboratory of Advanced Display and System Applications Shanghai200072 China School of Materials Science and Engineering Shanghai University Shanghai200072 China School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China

ISBN: (纸本)9798350385373

Micro LED display technology is considered to be the next generation of display technology and finds widespread applications in displays and visible light communication. key cooperation plays a crucial role in achieving electrical interconnections for Micro LED, which significantly impact their luminous quality and reliability. This study aims to analyze the stress-strain evolution during the bonding process of Micro LED arrays with cylindrical and spherical In bumps using COMSOL. The results demonstrate that the displacement of the bumps after bonding decreases by up to 97% compared to the displacement observed during the temperature-holding phase. Furthermore, the stresses during the temperature rise and fall stages approximately exhibit a linear relationship with temperature, and residual stresses exist after bonding. Additionally, residual stresses remain present after bonding. This study provides theoretical guidance for optimizing the bonding process of Micro LED and further exploration for the commercialization of Micro LED. © 2023 IEEE.

关键词： Light emitting diodes

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Hybrid bonding thermodynamic simulation of 3×3 array of Micro-LED fabricated based on flip-chip bonding 20

Hybrid bonding thermodynamic simulation of 3×3 array of Mic...

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20th China International Forum on Solid State Lighting and 9th International Forum on Wide Bandgap Semiconductors, SSLCHINA: IFWS 2023

作者： Li, Jianxin Zhou, Haojie Ji, Xiaoxiao Yin, Luqiao Zhang, Jianhua School of Microelectronics Shanghai University Shanghai200444 China Shanghai University Ministry of Education Key Laboratory of Advanced Display and System Applications Shanghai200072 China School of Materials Science and Engineering Shanghai University Shanghai200072 China School of Mechatronic Engineering and Automation Shanghai University Shanghai2000072 China

ISBN: (纸本)9798350385373

In this paper, ANSYS was used to perform a hybrid bonding thermodynamic simulation of Micro-LED fabricated based on flip-chip *** simulated the effects of different ILDs (interlayer dielectrics) and different diameters of In bumps on the mean stress of the bonding surface. The results show that filling BCB (Benzo cyclobutene)/PI (Polyimide)/SiO2 can significantly reduce the mean stress on the In bumps bonding area, among which, filling BCB/PI is better than filling SiO2. And when the diameter of the In bumps is 5 μm, the mean stress on the In bumps bonding area is lowest. For the mean stress on the bonding area of the ILDs, filling BCB/PI is also much better than filling SiO2. Changing the diameter of the In bumps has little effect on the mean stress of the ILDs bonding area filled with BCB/PI. As for the bonding area of the ILDs filled with SiO2, the mean stress increases as the diameter of the In bumps increases. This paper uses simulation experiments to study the mean stress on different bonding areas during the hybrid bonding process of preparing Micro-LED, which provides a theoretical basis for improving the bonding strength and yield of Micro-LED, and provides ideas for realizing the industrialization of Micro- LED. © 2023 IEEE.

关键词： Light emitting diodes

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Finite Element Simulation of Electrothermal and Mechanical Coupling in Micro-LED Array Based on Two Bump Shapes

Finite Element Simulation of Electrothermal and Mechanical C...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Zhu Yang Jianxin Li Hao Fu Haojie Zhou Xiaoxiao Ji Luqiao Yin Xiuzhen Lu Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

Micro-LED has attracted more attention due to its unique photoelectric properties, such as high brightness, high energy efficiency, high stability and other characteristics, which facilitate its widespread application. Bumps can be used for electrical connections and heat transfer paths as well as structural supports that affect the reliability of Micro-LED devices. Hybrid bonding enhances the reliability and longevity of electronic devices while also ensuring the compatibility of bonding process. Currently, there is limited finite element simulation research on Micro-LEDs, particularly regarding electrothermal and mechanical multi-physical field simulations. Herein, the electrothermal and mechanical coupling of a quarter of a 6×6 Micro-LED array model was analyzed using COMSOL Multiphysics simulation software and the finite element method. The analysis primarily focused on the stress and displacement of bumps in the hybrid bonding model. The optimal combinations of different bump materials (indium-In, tin-Sn) and filling materials (epoxy resin-EP and benzocyclobutene-BCB) were obtained. The results indicate that BCB is a more suitable filling material, while In is preferable as a bump material. Furthermore, variations in thermal stress and displacement of cylindrical and circular-truncated cone bumps of different aspect ratios were analyzed. This paper provides an idea for optimizing the fabrication of Micro-LED bumps and bonding processes.

关键词： Couplings Analytical models Filling Software Finite element analysis Thermal analysis Reliability Bonding Stress Thermal stresses

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Fatigue Life Analysis of Hybrid Bonding in Micro-LED Interconnection

Fatigue Life Analysis of Hybrid Bonding in Micro-LED Interco...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Xinhui Meng Kefeng Wang Hong Fan Zhu Yang Hao Fu Luqiao Yin Xiuzhen Lu Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

Micro-LED displays have garnered widespread attention due to their high resolution, high brightness, and long lifespan. However, the heterogeneous integration and the reliability of Micro-LEDs pose significant challenges for their commercialization. As Micro-LED products develop towards larger sizes and narrower pitches, the Au/In bonding process has become a prevalent strategy for achieving high-resolution interconnections. To address the issue of the life span being affected by the plastic deformation of indium bumps, which ultimately fail in the form of yielding, an Au/In-resin hybrid bonding technique to improve the reliability of high-resolution Micro-LEDs was proposed in this paper. The reliability of the flip-chip bonding structure of a $4\times 4$ Micro-LED array was analyzed using ANSYS simulation software and finite element methods. The Anand unified viscoplastic constitutive model was employed for both indium bumps and the encapsulating resin. The model was subjected to temperature cycling loads ranging from $-55^{\circ}\mathrm{C}$ to $125^{\circ}\mathrm{C}$ in accordance with the JEDEC temperature cycling standard. The Coffin-Manson fatigue life prediction model, which accounts for plastic strain in materials, was introduced to estimate the thermal cycling fatigue life of the Micro-LED interconnection structures. The equivalent plastic strain range of hybrid bonding device was $6.708\times 10^{-3}$ , surpassing the $7.59\times 10^{-3}$ observed in device with conventional bump bonding. The hybrid bonding device exhibited a thermal cycling life of 12747 cycles, which was about 36% longer than that of the bump bonding device. It suggests that resin helps to extend the thermal cycling life of the device and enhance its reliability.

关键词： Temperature distribution Deformation Fatigue Software reliability Finite element analysis Resins Plastics Bonding Strain Load modeling

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High-Performance Spiro Bifluoren-Based Charge Generation Layer for the Efficient and Thermal-Stability Organic Light-Emitting Diodes

SSRN

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SSRN 2025年

作者： Xu, Yachen Zhou, Qi Li, Chunya Wu, Ranghui Shi, Wei Lin, Yang Lan, Weixia Wei, Bin School of Mechatronic Engineering and Automation Shanghai University Shanghai200444 China Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China

We have designed and synthesized 2-(9,9'-spirobi[fluoren]-2-yl)-1,10-phenanthroline (SBFPA) and investigated its optoelectrical and thermal characteristics to apply it as a charge generation layer (CGL). The SBFPA-engaged CGL in tandem organic light-emitting diodes (OLEDs) could efficiently generate and balance the injection of carriers. The current efficiency of the tandem red phosphorous OLED reached 31.2 cd/A at a luminance of 10,000 cd/m², which is 2.7 times that of the single OLED (11.6 cd/A). The decomposition temperature of SBFPA was as high as 342 ℃, which guaranteed the thermal stability of the tandem OLED. Moreover, the T95 lifetime (time to 95% of the initial luminance) of the tandem OLED reached 229 h. The charge generation ability of CGL was confirmed through a p-i-n-CGL-structured OLED, where CGL was inserted between the electron injection layer and the cathode to work as the source of electron generation. The maximum power efficiency of the OLED increased 30.9% to 10.46 lm/W, and the maximum luminescence enhanced 41.5% to 23925 cd/m2 compared to the OLED without CGL. The results highlight the promising application of the developed CGL in tandem OLED, offering new possibilities for development of reliable electronics. © 2025, The Authors. All rights reserved.

关键词： Organic light emitting diodes (OLED)

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