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Fabrication and Study of Micro-LED Quantum Dot Color Conversion Layer Based on Inkjet Printing

Fabrication and Study of Micro-LED Quantum Dot Color Convers...

China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Xinyi Wang Haojie Zhou Xiaoxiao Ji Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China School of Materials Science and Engineering Shanghai University Shanghai China

In this study, red and green quantum dot color conversion layer was successfully fabricated using inkjet printing (IJP) technology on a blue micro-light-emitting diode (Micro-LED) backlight. To reduce the optical crosstalk between different sub-pixels, a black matrix (BM) layer with a thickness of 15 μm was proposed. Furthermore, to protect quantum dots (QDs), a SiO 2 passivation layer with a thickness of 3 nm was uniformly deposited on the entire pattern by Atomic Layer Deposition (ALD). Subsequently, a pixel array featuring a sub-pixel size of 37.5 μm and a line width of 2 μm was fabricated on the BM layer treated with Reactive Ion Etching (RIE), and the thickness of the QDCC layer was controlled by RIE. The external quantum efficiencies of the red and green QDCC layer were 12.9% and 18.2%, respectively, and the emission spectra had blue light being transmitted, accompanied by a slight redshift. This research addresses the gaps in display applications and holds promise for the future advancement of Micro-LED display technology.

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Mechanical Properties of Flip-Chip Bonding Structures for Micro-Led Devices: Cu-Cu Bonding with Passivation Layer and Indium Bumps Bonding

Mechanical Properties of Flip-Chip Bonding Structures for Mi...

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China Semiconductor Technology International Conference (CSTIC)

作者： Kefeng Wang Zehua Chen Xiaoxiao Ji Luqiao Yin Xiuzhen Lu Zhang Jianhua Zhang School of microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China School of Mechatronic Engineering and Automation Shanghai University Shanghai China

A traditional bonding structure with indium bumps and a new bonding structure with passivation layer using Cu bumps were simulated to bond Micro-LED and substrate. Anand model and bilinear isotropic hardening model were used to characterize the viscoplastic behavior of In and the plastic behavior of composite structure simplified from the combination of Cu and Au, respectively. Mechanical properties of two kinds of micro-display devices with different bonding structures were analyzed by the ANSYS finite element method and the thermo-mechanical coupling field. The deformation and stress of the micro-display device using Cu-Cu bonding structure with passivation layer are reduced by 19.5% and 59.1% compared with the device bonded by In bumps.

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Simulation Study on Electrothermal and Mechanical Coupling of Bumps in 5×5 Micro-LED Array

Simulation Study on Electrothermal and Mechanical Coupling o...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Zhu Yang Hao Fu Kefeng Wang Xiaoxiao Ji Liang Chen Luqiao Yin Xiuzhen Lu Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China School of Mechatronic Engineering and Automation Shanghai University Shanghai China

As a frontier research field of next-generation display technology, Micro-LED technology has the advantages of high brightness, high contrast and high energy efficiency. With the development trend of high-power, multi-array LEDs, the research on thermal stability of LEDs is gradually deepened. In order to explore the thermal stability of bumps during the working of Micro-LED, COMSOL Multiphysics simulation software and finite element method were used to analyze the electrothermal and mechanical coupling of bumps in 5×5 Micro-LED array in this paper. Flip-chip bonding was employed for interconnection of Micro-LED array and Si driver chip with the gap except Micro-LED devices between sapphire and silicon substrate filled with underfill to alleviate the stress concentration. The effects of different filling materials, applied current densities, and dimensions of In bumps (cylindrical) on thermal stress and displacement of the Micro-LED array were analyzed in detail. The results show the stress and displacement of the bumps with polyimide (PI) underfill were the smallest than that of bumps with benzocyclobutene (BCB) and epoxy resin (EP) underfill. Additionally, the temperature, thermal stress, and displacement of the bumps were also affected by the applied current density and the size of the bumps.

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High-performance,large-area perovskite light-emitting diodes

High-performance,large-area perovskite light-emitting diodes

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第10届亚洲和澳大利亚真空与表面科学会议、中国真空学会2021学术年会、第十五届国际真空科学与工程应用学术会议

作者： Lin Wang Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University

Metal halide perovskites based light-emitting diodes (PeLEDs) have attracted extensive attention for lighting and display applications because of their excellent advantages,such as narrow emission bandwidth,color tuna... 详细信息

关键词： metal halide perovskite light-emitting diodes large-area

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A Monolithically Integrated Voltage Reference based on AlGaN/GaN Schottky Gate HEMTs

A Monolithically Integrated Voltage Reference based on AlGaN...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Wenqing Lu Luqiao Yin Jianhua Zhang Kailin Ren Shanghai University Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) School of Microelectronics Shanghai University Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

In this work, a monolithically integrated voltage reference based on AlGaN/GaN Schottky Gate High Electron Mobility Transistor (SG-HEMTs) technology is proposed and studied by TCAD simulations. This simple but stable voltage reference consists of only two D-mode transistors with different threshold voltages, which can generate a predictable reference voltage (V REF ) and maintain high stability over a wide range of supply voltage and temperature. It is verified by TCAD simulations that V REF of 1.48V is realized for the power supply voltage range of 3.3 to 10 V. In the temperature range of 300 K to 500 K, the sensitivity of the VREF line is 0.064%/V and the temperature coefficient is 8.21 ppm/°C. The proposed design of the reference voltage source composed of double D-mode SG-HEMT exhibits high feasibility, and can be used in bias and detection circuits to reduce the circuit complexity and chip area.

关键词： Temperature sensors Temperature distribution Circuits HEMTs Logic gates Threshold voltage Generators Wide band gap semiconductors MODFETs Aluminum gallium nitride

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Subthreshold Swing Model of GaN-Based Fin-Gate High Electron Mobility Transistors

Subthreshold Swing Model of GaN-Based Fin-Gate High Electron...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Hanlin Yang Jiayi Yang Tiantian Guan Kailin Ren School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China

Compared to the traditional HEMTs, better gate control ability especially smaller subthreshold swing, can be achieved with a fin-gate structure, which can be widely used in power, RF circuits. However, there has been few works related to subthreshold swing reported previously. In this study, a Fin- HEMT device is investigated by TCAD simulation, and a subthreshold swing model was constructed. The simulation results verify the performance of the model. According to the simulation results, with an error of less than 6%, this work provide design guidlines for the research of Fin-HEMT devices.

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Temperature Endurable Face-Sealing Polyisobutylene Film with Contactable Liquid Desiccant for the Encapsulation of OLEDs

SSRN

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SSRN 2024年

作者： Zheng, Haixai Zhu, Yangyang Zhao, Bingjia Lin, Yang Lan, Weixia Shi, Wei Wei, Bin School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China School of Microelectronics Shanghai University Shanghai200072 China Shanxi Datong University China

We propose a face-sealed encapsulation solution with simple process and low cost. The polyisobutylene encapsulation patch mixed with calcium oxide particles is attached to the surface of the OLEDs that is exposed to the hygroscopic agent in a face-sealing manner. We find that this encapsulation scheme exhibited excellent waterproof performance. The encapsulated OLED has a long shelf lifetime in water under high temperature conditions, which is manifested in a long underwater shelf lifetime of T95 (luminance drops to 95% of the initial luminance) of over 336 hours at 60°C. This strategy can be extended to roll-to-roll processes to expand the application of flexible photoelectronic devices. © 2024, The Authors. All rights reserved.

关键词： Luminance

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Synthesis and application of a novel 9,9-diethyl-1,2-diaryl-1,9-dihydrofluoreno[2,3-d]imidazole for blue organic light emitting diode

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Chinese Chemical Letters 2020年第1期31卷 64-66页

作者： Xueying Wang Zhangcheng Liao Tianqi Wang Haixia Lin Zixing Wang Yongmei Cui Department of Chemistry College of Sciences.Shanghai UniversityShanghai 200444China Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai UniversityShanghai 200072China

Two novel 2-(4-(9,9-disubstitued-9 H-fluoren-2-yl)phenyl)-9,9-diethyl-l-phenyl-1,9-dihydrofluoreno-[2,3-d]imidazole derivatives 2 a and 2 b were synthesized and *** photophysical and electrochemical properties,thermal stability property,and electroluminescence(EL)performance of 2 b were *** fabricated device based on 2 b doping into 4,4’-N,N’-dicarbazole-biphenyl(5%)as an emitter present a maximum brightness of 1272 cd/m^2 at 4 V with the CIE coordinate of(0.1590,0.0465).

关键词： Fluorene Imidazole Photoluminescence Electroluminescence

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Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical-Cavity Surface-Emitting Lasers 4th

Lateral Etched Tunnel Junction Apertures for 1.3μm Vertical...

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4th International Conference on Telecommunications and Communication Engineering, ICTCE 2020

作者： Liu, Cheng Wu, Huizhen School of Microelectronics Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai200072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Department of Physics Zhejiang University Zhejiang Hangzhou310027 China

ISBN: (纸本)9789811656910

1.3μm wafer-bonded vertical-cavity surface-emitting lasers are fabricated, which employ lateral etched p+-InAlAs/n+-InP tunnel junctions as confinement apertures. The VCSEL with a 5μm-diameter aperture exhibits CW operation with threshold current of 0.55 mA, maximum operation temperature up to 82 °C and single-transverse mode emission. The relationship between temperature-dependent characteristics and aperture sizes are discussed. The lateral etched p+-InAlAs/n+-InP tunnel junction aperture is attractive as confinement for high performance wafer-bonded long wavelength VCSELs. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

关键词： Surface emitting lasers

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Principles, fabrication, and applications of halide perovskites-based memristors

FlexMat

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FlexMat 2024年第2期1卷 127-149页

作者： Xiaozhe Cheng Zhitao Dou Hong Lian Zhitao Qin Hongen Guo Xifeng Li Wai-Yeung Wong Qingchen Dong MOE Key Laboratory of Advanced Display and System Applications Shanghai University Shanghai China School of Mechanical & Electronic Engineering and Automation Shanghai University Shanghai China Department of Applied Biology and Chemical Technology The Hong Kong Polytechnic University (PolyU) Hong Kong China School of Microelectronics Shanghai University Shanghai China Qingchen Dong and Wai-Yeung Wong.

In recent decades, the microelectronics industry has developed rapidly based on the von Neumann architecture and under the guidance of Moore's law. However, as the size of electronic devices approaches the limit and power consumption increases, traditional microelectronic materials and devices are facing more and more challenges. As a new type of semiconductor material, halide perovskites (HPs) have excellent photoelectric characteristics, such as high carrier mobility, controllable band structure, etc., which have been widely used in solar cells, light emitting diodes (LEDs), photodetectors, memristors, and in other fields. Among them, the memristor, as a new type of electronic device, is very promising for in-memory computing with low power consumption by breaking the limit of von Neumann architecture. Especially, HPs-based memristors show outstanding photoelectric response performance, low power consumption, and flexible wearability, allowing them to hold great application potential in logical operation, polymorphic storage, and neuromorphic computing, etc. In this review, we first briefly introduce the basic characteristics and preparation methods of HPs. Secondly, the development history, device structure, and performance parameters of memristors are depicted in detail. Thirdly, the resistance mechanism and application of HPs-based memristors are discussed. Finally, the research status and development prospects of HPs-based memristors are outlined.

关键词： artificial synapse crystal structure halide perovskites memristor

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