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检索条件"机构=Key Laboratory Microelectronic Devices and Integration Technology"
420 条 记 录,以下是1-10 订阅
排序:
Ultralow Ohmic Contact in Recess-Free Ultrathin Barrier AlGaN/GaN Heterostructures Across a Wide Temperature Range
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Chinese Journal of Electronics 2025年 第1期26卷 137-145页
作者: Yuhao Wang Sen Huang Qimeng Jiang Xinhua Wang Jie Fan Haibo Yin Ke Wei Yingkui Zheng Xinyu Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences
“Ohmic-before-passivation” process was implemented on ultrathin-barrier AlGaN(<6 nm)/GaN heterostructure to further reduce the ohmic contact resistance(Rc). In this process, alloyed Ti/Al/Ni/Au ohmic metal wa... 详细信息
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Optimizing large optical contrast in Ge-Se-Te films via high-throughput method
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Progress in Natural Science:Materials International 2025年 第1期35卷 222-228页
作者: Qiqi Chen Guoxiang Wang Zijun Liu Yixiao Gao Chenjie Gu Tiefeng Xu Xiang Shen Yimin Chen Laboratory of Infrared Material and Devices & Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province Advanced Technology Research InstituteNingbo University Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo Solartrum Co.Ltd.
Chalcogenide phase-change materials(PCMs) have attracted great attentions due to their potential applications in reconfigurable photonic devices. The Ge2Sb2Te5and GeTe PCMs exhibit significant difference in refracti... 详细信息
来源: 评论
Angular and planar transport properties of antiferromagnetic V_(5)S_(8)
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Chinese Physics B 2024年 第2期33卷 66-71页
作者: 吴晓凯 王彬 吴德桐 陈博文 弭孟娟 王以林 沈冰 Center for Neutron Science and Technology and School of Physics Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devicesand Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-Sen UniversityGuangzhou 510275China School of Integrated Circuits Shandong Technology Center of Nanodevices and IntegrationState Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100China
Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V_(5)S_(8).In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared... 详细信息
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Physical investigation of subthreshold swing degradation behavior in negative capacitance FET
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Science China(Information Sciences) 2022年 第6期65卷 241-246页
作者: Mengxuan YANG Qianqian HUANG Kaifeng WANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University
Power consumption has become one of the bottlenecks limiting the future development of integrated circuits. Tunnel FETs(TFETs) and negative capacitance FETs(NCFETs) can break the subthreshold swing limitation(60 mV/de... 详细信息
来源: 评论
High-voltage-resistant wafer-scale 4H-SiC ultraviolet photodetector with high uniformity enabled by electric field distribution modulation
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Nano Research 2025年 第4期18卷 544-551页
作者: Wanglong Wu Shuo Liu Zhiyuan Liu Xinyun Zhou Xiong Yang Xinyun He Qinglin Xia Mianzeng Zhong Jingbo Li Jun He Hunan Key Laboratory of Nanophotonics and Devices School of PhysicsCentral South UniversityChangsha 410083China Guangdong Provincial Key Laboratory of Chip and Integration Technology School of Semiconductor Science and TechnologySouth China Normal UniversityFoshan 528225China Zhejiang Xinke Semiconductor Co. LtdHangzhou 311421China College of Optical Science and Engineering Zhejiang UniversityHangzhou 310027China
Wide bandgap semiconductors are ideal materials for ultraviolet(UV)photodetectors due to their stable optoelectronic properties and high efficient UV light ***,photodetectors based on pure wide bandgap semiconductors ... 详细信息
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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors
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Science China(Information Sciences) 2022年 第6期65卷 277-278页
作者: Mengxuan YANG Qianqian HUANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University
Dear editor,Recently, ferroelectric(FE)-based negative capacitance FET(NCFET) with ferroelectric/dielectric(FE/DE) gate stack has attracted extensive attention due to its capability of sub-60 mV/dec subthreshold swing... 详细信息
来源: 评论
A single-inductor thermoelectric, photovoltaic and vibration triplesource energy-harvesting power management system
A single-inductor thermoelectric, photovoltaic and vibration...
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2022 International Conference on Signal Processing and Communication technology, SPCT 2022
作者: Liang, Zhanrong Wei, Baolin Xu, Weilin Wei, Xuming Gui, Fadi Li, Haiou Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Guangxi Guilin541004 China
A single-inductor triple-source energy harvesting system that can harvest thermoelectric, photovoltaic and vibration energy was presented. With an integrated self-starting circuit, the system can self-supply while don... 详细信息
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A Depletion-enhanced N Layers Stacked LDMOS  3
A Depletion-enhanced N Layers Stacked LDMOS
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3rd International Symposium on Semiconductor and Electronic technology, ISSET 2024
作者: Li, Qi Liang, Lanyi Guan, Li Dang, Tianbao Huang, Hong Chen, Yonghe Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China Key Laboratory of Microelectronic Devices and Integrated Circuits Navigation Department of Guangxi Zhuang Autonomous Region Guilin541004 China
With the development of power integrated circuits, LDMOS devices assume a significant role in power device applications due to their elevated input impedance and enhanced conversion rate. Nonetheless, a contradictory ... 详细信息
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Back Gate Controlled Pseudo-P-Channel GaN HFET  3
Back Gate Controlled Pseudo-P-Channel GaN HFET
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3rd International Symposium on Semiconductor and Electronic technology, ISSET 2024
作者: Guan, Li Li, Qi Liang, Lanyi Wang, Lei Zhang, Xin Li, Haiou Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China Key Laboratory of Microelectronic Devices and Integrated Circuits Education Department of Guangxi Zhuang Autonomous Region Guilin541004 China
This paper proposes a novel pseudo-p-channel AlGaN/GaN heterostructure field-effect transistor (PP-HFET). As semiconductor technology advances, GaN devices are preferred for high-power and high-frequency applications ... 详细信息
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High-performance flexible Sb_(2)Se_(3) thin-film photodetector for tunable color imaging and wearable physiological monitoring applications
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Nano Research 2025年 第2期18卷 687-698页
作者: Shuo Chen Hong-Bo Li Yi Fu Guo-Qiang Liu Muhammad Ishaq Jun Luo Jian-Min Li Bo Che Jing-Ting Luo Liming Ding Tao Chen Guang-Xing Liang Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceState Key Laboratory of Radio Frequency Heterogeneous IntegrationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China The Hospital of Shenzhen General Station of Exit and Entry Frontier Inspection Shenzhen 518024China Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education School of Physics and TechnologyWuhan UniversityWuhan 430072China Hefei National Research Center for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy ConversionDepartment of Materials Science and EngineeringUniversity of Science and Technology of ChinaHefei 230026China Center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190China
Antimony selenide(Sb_(2)Se_(3))has recently made considerable photovoltaic,advancements in photoelectrochemical,and photodetector research scenarios,owing to its advantageous material merits and superior optoelectroni... 详细信息
来源: 评论