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Ultralow Ohmic Contact in Recess-Free Ultrathin Barrier AlGaN/GaN Heterostructures Across a Wide Temperature Range

Chinese Journal of Electronics 2025年第1期26卷 137-145页

作者： Yuhao Wang Sen Huang Qimeng Jiang Xinhua Wang Jie Fan Haibo Yin Ke Wei Yingkui Zheng Xinyu Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences

“Ohmic-before-passivation” process was implemented on ultrathin-barrier AlGaN（<6 nm）/GaN heterostructure to further reduce the ohmic contact resistance（Rc）. In this process, alloyed Ti/Al/Ni/Au ohmic metal was formed first, followed by AlN/SiNxpassivation contributed to restore two-dimensional electron gas（2DEG） in the access region. Due to the sharp change in the concentration of 2DEG at the metal edge, a reduced transfer length consisted with lower Rcare achieved compared to that of ohmic contact on AlGaN（～20 nm）/GaN heterostructure with pre-ohmic recess process. Temperature-dependent current voltage measurements demonstrate that the carrier transport mechanism is dominated by thermionic field emission above 200 K and by field emission below 200 K. The “ohmic-before-passivation” process enables the relative stability of ohmic contacts between 50 K and 475 K and significantly improves the direct current characteristics of GaN-metal-insulator-semiconductor-high electron mobility transistor, offering a promising means for scaling down and enabling the utilization of low-voltage GaN-based power devices in extreme environmental conditions.

关键词： optimal CDG framework telecommunication network routing energy efficient WSN CS compressed sensing diffusion wavelet transform matrix optimal compressed data gathering framework wireless sensor network Measurement matrix telecommunication power management measurement matrix optimization algorithm compressed data measurement sparse representation optimal data aggregation tree algorithm energy consumption trees (mathematics) Compressed sensing (CS) signal representation Wireless sensor networks (WSNs) ODAT algorithm data transmission reduction wavelet transforms wireless sensor networks Optimal data aggregation tree (ODAT) MMOA energy consumption minimization routing technology energy conservation DWTM

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Optimizing large optical contrast in Ge-Se-Te films via high-throughput method

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Progress in Natural Science:Materials International 2025年第1期35卷 222-228页

作者： Qiqi Chen Guoxiang Wang Zijun Liu Yixiao Gao Chenjie Gu Tiefeng Xu Xiang Shen Yimin Chen Laboratory of Infrared Material and Devices & Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province Advanced Technology Research InstituteNingbo University Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo Solartrum Co.Ltd.

Chalcogenide phase-change materials（PCMs） have attracted great attentions due to their potential applications in reconfigurable photonic devices. The Ge2Sb2Te5and GeTe PCMs exhibit significant difference in refractive index（Δn） between amorphous and crystalline states, but they suffer from high optical loss. The binary Sb2S3and Sb2Se3PCMs, however, show low optical loss but small Δn. This encourages us to develop the novel materials,which are desired to combine large Δn and low optical loss. Instead of traditional trial-and-error screening method, we here used an efficient high-throughput method to optimize the PCMs' candidates for reconfigurable photonic devices in Ge-Se-Te chalcogenides. The crystallization temperature and difference in optical bandgap were detected, and then the component of Ge25Se7Te68, which also exhibits ultralow optical loss of 1.2 × 10-6（in amorphous state） and large Δn of 1.32 at 1550 nm, was optimized. This Te-rich Ge-Se-Te film can be a candidate for the applications of programmable reconfigurable photonic circuits.

关键词： Chalcogenide phase-change films High-throughput Reconfigurable photonics Refractive index

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Angular and planar transport properties of antiferromagnetic V_(5)S_(8)

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Chinese Physics B 2024年第2期33卷 66-71页

作者：吴晓凯王彬吴德桐陈博文弭孟娟王以林沈冰 Center for Neutron Science and Technology and School of Physics Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devicesand Key Laboratory of Optoelectronic Materials and TechnologiesSun Yat-Sen UniversityGuangzhou 510275China School of Integrated Circuits Shandong Technology Center of Nanodevices and IntegrationState Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100China

Systemically angular and planar transport investigations are performed in layered antiferromagnetic(AF)V_(5)S_(8).In this AF system,obvious anomalous Hall effect(AHE)is observed with a large Hall angle of 0.1 compared to that in ferromagnetic(FM)*** can persist to the temperatures above AF transition and exhibit strong angular field *** phase diagram reveals various magnetic states by rotating the applied *** analyzing the anisotropic transport behavior,magnon contributions are revealed and exhibit obvious angular dependence with a spin-flop vanishing *** observed prominent planar Hall effect and anisotropic magnetoresisitivity exhibit two-fold systematical angular dependent *** behaviors are attributed to the scattering from spin–orbital coupling instead of nontrivial topological *** results reveal anisotropic interactions of magnetism and electron in V5S8,suggesting potential opportunities for the AF spintronic sensor and devices.

关键词： antiferromagnetism planar Hall effect magnetic and topological properties

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Physical investigation of subthreshold swing degradation behavior in negative capacitance FET

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Science China(Information Sciences) 2022年第6期65卷 241-246页

作者： Mengxuan YANG Qianqian HUANG Kaifeng WANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Power consumption has become one of the bottlenecks limiting the future development of integrated circuits. Tunnel FETs(TFETs) and negative capacitance FETs(NCFETs) can break the subthreshold swing limitation(60 mV/dec at room temperature) of conventional metal-oxide-semiconductor field-effect transistor(MOSFET) to reduce the operating voltage and thus power consumption. However, induced by the band-to-band tunneling mechanism, TFETs have a subthreshold swing degradation issue and relatively low ON current. Although NCFETs with ferroelectric/dielectric gate stack can theoretically maintain a high ON current comparable to conventional MOSFET, the physical origin of sub-60 SS is controversial and the mechanism of switching behavior in NCFET is still not clear. In this work, by experimentally investigating the whole negative differential capacitance process and its gate voltage amplification coefficient, an intrinsic issue of SS degradation with increased gate voltage is also found in NCFET for the first time. Based on the physical investigation and simulation results, it is shown that the intrinsic SS degradation in NCFET is resulting from the instant dielectric polarization response. Both the decrease of dielectric thickness and the increase of dielectric constant may lead to the severer SS degradation, which is not favorable for scaled NCFETs.

关键词： ferroelectric negative differential capacitance effect polarization low power voltage amplification

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High-voltage-resistant wafer-scale 4H-SiC ultraviolet photodetector with high uniformity enabled by electric field distribution modulation

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Nano Research 2025年第4期18卷 544-551页

作者： Wanglong Wu Shuo Liu Zhiyuan Liu Xinyun Zhou Xiong Yang Xinyun He Qinglin Xia Mianzeng Zhong Jingbo Li Jun He Hunan Key Laboratory of Nanophotonics and Devices School of PhysicsCentral South UniversityChangsha 410083China Guangdong Provincial Key Laboratory of Chip and Integration Technology School of Semiconductor Science and TechnologySouth China Normal UniversityFoshan 528225China Zhejiang Xinke Semiconductor Co. LtdHangzhou 311421China College of Optical Science and Engineering Zhejiang UniversityHangzhou 310027China

Wide bandgap semiconductors are ideal materials for ultraviolet(UV)photodetectors due to their stable optoelectronic properties and high efficient UV light ***,photodetectors based on pure wide bandgap semiconductors typically have large dark current that inhibit the devices from generating high UV ***,a high-voltage-resistant wafer-scale 4H-SiC UV photodetector enabled by electric field distribution modulation is *** the P+region introduced by the ion implantation process affects the electric field distribution and suppresses the Schottky barrier lowering effect,the dark current of the device reaches pA-level,and remains nA-level at a bias voltage of 1 ***,the device exhibits superior photoresponse,including a prominent responsivity of 105.7 A/W,a remarkable detectivity of 1.01×10^(14) Jones,an outstanding photoconductive gain of 477,and a high light on/off ratio of 1.84×10^(5).This device provides a reliable solution for high-performance UV photodetectors that require high-voltage-resistant in special areas,and the wafer-scale fabrication process makes it feasible for practical applications.

关键词： high-voltage-resistant wafer-scale 4H-SiC electric field distribution ultraviolet photodetector

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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors

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Science China(Information Sciences) 2022年第6期65卷 277-278页

作者： Mengxuan YANG Qianqian HUANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Dear editor,Recently, ferroelectric(FE)-based negative capacitance FET(NCFET) with ferroelectric/dielectric(FE/DE) gate stack has attracted extensive attention due to its capability of sub-60 mV/dec subthreshold swing... 详细信息

关键词： Ferroelectric Negative differential capacitance effect Polarization Low power Subthreshold swing

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A single-inductor thermoelectric, photovoltaic and vibration triplesource energy-harvesting power management system

A single-inductor thermoelectric, photovoltaic and vibration...

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2022 International Conference on Signal Processing and Communication technology, SPCT 2022

作者： Liang, Zhanrong Wei, Baolin Xu, Weilin Wei, Xuming Gui, Fadi Li, Haiou Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Guangxi Guilin541004 China

ISBN: (纸本)9781510664333

A single-inductor triple-source energy harvesting system that can harvest thermoelectric, photovoltaic and vibration energy was presented. With an integrated self-starting circuit, the system can self-supply while don't require an external battery. The hybrid modulation of pulse-frequency modulation (PFM) and pulse-width modulation (PWM) is performed to realize adaptive asynchronous control for input and output, achieving higher system stability and better energy aggregation. An adaptive maximum power point tracking (MPPT) was employed to generate inductor charging control signals with different frequencies and duty cycles according to different input sources, enabling the inductor to operate in discontinuous mode (DCM) under different input conditions. The energy harvesting system was designed in a 0.18-μm CMOS process. The simulation results show that the system can realize low-voltage self-startup as low as 200 mV and can provide a stable output of 1.4 V for the load and a 1 V harvested voltage for self-supply. The conversion efficiency of the system is 76.43%@Rload = 10 kΩ, and the average power consumption in sleep mode is 2.38 μW. © 2023 SPIE.

关键词： Energy harvesting

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A Depletion-enhanced N Layers Stacked LDMOS 3

A Depletion-enhanced N Layers Stacked LDMOS

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3rd International Symposium on Semiconductor and Electronic technology, ISSET 2024

作者： Li, Qi Liang, Lanyi Guan, Li Dang, Tianbao Huang, Hong Chen, Yonghe Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China Key Laboratory of Microelectronic Devices and Integrated Circuits Navigation Department of Guangxi Zhuang Autonomous Region Guilin541004 China

ISBN: (纸本)9798350390285

With the development of power integrated circuits, LDMOS devices assume a significant role in power device applications due to their elevated input impedance and enhanced conversion rate. Nonetheless, a contradictory relationship exists between the breakdown voltage and specific on-resistance in power LDMOS devices. Consequently, an n-layer stacked lateral double-diffused metal-oxide-semi conductor transistor(SLDMOS) is proposed, in which numerous MOS cells are stacked under the same chip area. The on-state resistance (R_on) of the n layers S-LDMOS is decreased significantly because of the vertical parallel connection, also the interference among devices is weakened through electrode interconnection isolated by oxidation layer. Multiple drift regions are formed by alternate epitaxy N-layer (drift region) and P-layer (substrate), and each drift region is depleted by the top and bottom P substrates, leading to a much lower R_on. The lightly-doped substrate and N/P top region are used to improve the breakdown characteristics, and the floating P layers are introduced to enhance the depletion effect in drift regions and decrease device thicknesses. By optimizing the configuration, a balanced trade-off is obtained. The simulation results indicate that compared with the traditional LDMOS, the 2 layers S-LDMOS exhibits a BV of 356 V and a specific on resistance (R_on,sp) of 13.56 mΩċ cm2, an improvement of 26.2 % and 71.6%, respectively. And the R_on, sp of n layers S-LDMOS will be reduced to less than 1/n of C-LDMOS further. © 2024 IEEE.

关键词： Power integrated circuits

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Back Gate Controlled Pseudo-P-Channel GaN HFET 3

Back Gate Controlled Pseudo-P-Channel GaN HFET

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3rd International Symposium on Semiconductor and Electronic technology, ISSET 2024

作者： Guan, Li Li, Qi Liang, Lanyi Wang, Lei Zhang, Xin Li, Haiou Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China Key Laboratory of Microelectronic Devices and Integrated Circuits Education Department of Guangxi Zhuang Autonomous Region Guilin541004 China

ISBN: (纸本)9798350390285

This paper proposes a novel pseudo-p-channel AlGaN/GaN heterostructure field-effect transistor (PP-HFET). As semiconductor technology advances, GaN devices are preferred for high-power and high-frequency applications due to their high electron mobility, breakdown field, and wide bandgap. Traditional AlGaN/GaN HFETs perform well because of their high electron density and mobility in the 2DEG channel. However, conventional n-type AlGaN/GaN HFETs are limited in applications requiring p-channel devices. The PP-HFET consists of a top reference electrode and a back-gate control electrode. During operation, the top reference electrode of the PP-HET is biased negatively, rendering the device to be initially in the off state. When a negative voltage is applied to the back gate, the two-dimensional electron gas (2DEG) in the channel is regenerated owing to the compensation effect of the electric field. The more negative the back-gate voltage, the higher the ON current of the device, exhibiting the same characteristics as those of a p-channel device. The effects of the device parameters on the output and transfer characteristics are comprehensively examined, and an analytical model is presented. The simulation results illustrate that the threshold voltage of the proposed device based on the back-gate control is approximately -3.5 V, and the current density is as high as 0.1 A/mm, which is much higher than that of the conventional E-mode p-channel GaN HFET based on two-dimensional hole gas. © 2024 IEEE.

关键词： Gallium nitride

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High-performance flexible Sb_(2)Se_(3) thin-film photodetector for tunable color imaging and wearable physiological monitoring applications

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Nano Research 2025年第2期18卷 687-698页

作者： Shuo Chen Hong-Bo Li Yi Fu Guo-Qiang Liu Muhammad Ishaq Jun Luo Jian-Min Li Bo Che Jing-Ting Luo Liming Ding Tao Chen Guang-Xing Liang Shenzhen Key Laboratory of Advanced Thin Films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceState Key Laboratory of Radio Frequency Heterogeneous IntegrationCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen 518060China The Hospital of Shenzhen General Station of Exit and Entry Frontier Inspection Shenzhen 518024China Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education School of Physics and TechnologyWuhan UniversityWuhan 430072China Hefei National Research Center for Physical Sciences at Microscale CAS Key Laboratory of Materials for Energy ConversionDepartment of Materials Science and EngineeringUniversity of Science and Technology of ChinaHefei 230026China Center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190China

Antimony selenide(Sb_(2)Se_(3))has recently made considerable photovoltaic,advancements in photoelectrochemical,and photodetector research scenarios,owing to its advantageous material merits and superior optoelectronic *** contrast,the exploration of flexible Sb_(2)Se_(3) photoelectric devices are less attempted,though it possesses unique one-dimensional(1D)crystal structure to enable large deformation ***,we develop a flexible Sb2Ses thin-film photodetector on polyimide *** to the high-quality SbSes light absorber and benign interfaces at both back contact and heterojunction regions,the carrier dynamics are effectively *** leading flexible Sb_(2)Se_(3) photodetector showcases self-powered and broadband features,with exceptional responsivity of 0.51 A·W^(-1) and realistic detectivity up to 1.32×10^(13) Jones,ultra-fast response speed of 49 ns/351 ns of rise and decay times,and remarkable mechanical deformation stability,flourishing the high-level development for flexible Sb_(2)Se_(3) ***,a tunable single/dual-color flexible imaging system under band alignment modulation,along with a wearable and accurate heart rate/arterial blood oxygen saturation photoplethysmography detection system highlights the great application potential for flexible Sb,Ses photodetectors.

关键词： Sb_(2)Se_(3) flexible thin-film photodetector color imaging heart rate arterial blood oxygen saturation

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