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arXiv 2024年

作者： Li, Kang-Jie Wang, Ze-Quan Chen, Zu-Xin Hou, Yusheng Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices Center for Neutron Science and Technology School of Physics Sun Yat-Sen University Guangzhou510275 China Guangdong Provincial Key Laboratory of Chip and Integration Technology School of Semiconductor Science and Technology South China Normal University Guangzhou528225 China

The emergence of multiferroic materials, which possess both ferromagnetic (FM) and ferroelectric (FE) properties, drive advancements in magnetoelectric applications and the next generation of spintronics. Based on first-principles calculations, we investigate an engineered two-dimensional multiferroic van der Waals heterostructures consisting of FM VSiSnN4 monolayer (ML) and fully hydrogenated FE AlN bilayer. We find that the magnetic anisotropy of VSiSnN4 ML is tunable between out-of-plane and in-plane and a phase transition between semiconductor and metal is induced in VSiSnN4/AlN bilayer when the FE polarization direction of AlN bilayer is reversed. Surprisingly, when the FE polarization of AlN bilayer is upward, the Curie temperature of VSiSnN4/AlN bilayer can be significantly increased from 204K to 284K. Such nonvolatile and tunable magnetic anisotropy, Curie temperature and band alignment in VSiSnN4/AlN multiferroic heterostructure are highly promising for future low-current operation of data storage and logic devices. © 2024, CC BY.

关键词： Aluminum nitride

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Investigation of Vertically Stacked Horizontal Gate-All-Around SI Nanosheet Ion Sensitive Field Effect Transistor For Detection of C-Reactive Protein

Investigation of Vertically Stacked Horizontal Gate-All-Arou...

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China Semiconductor technology International Conference (CSTIC)

作者： Yang Liu Qingzhu Zhang Junjie Li Cinan Wu Lei Cao Yanna Luo Zhaohao Zhang Shuhua Wei Qianhui Wei Jiaxin Yao Jiawei Hu Meiyan Qin Enxu Liu Yanchu Han LianLian Li YingLu Li Tao Yang Na Zhou Jianfeng Gao Junfeng Li Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China College of Big Data and Information Engineering Guizhou University Guiyang China School of Information Science and Technology North China University of Technology Beijing China State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co. Ltd. Beijing China

In this work, based on advanced gate-all-around (GAA) technology, the extended sensing gate (ESG) GAA Si nanosheet (SiNS) ion sensitive field effect transistor (ISFET) sensor was fabricated and reported for the first time. Due to the GAA structures and the vertically-stacked SiNS channels, the average sensitivity of the ESG GAA SiNS ISFET sensor can be reached 58.8 mV/pH, which provides good gate control and ultra-sensitive detection capabilities. In addition, the actual minimum detection concentration of C-reactive protein (CRP) by ESG GAA SiNS ISFET sensor in 1$\times$ PBS environment is as low as 100pg/mL, which is much lower than the normal concentration of human body.

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A Low Power Active-Passive Noise Shaping SAR ADC

A Low Power Active-Passive Noise Shaping SAR ADC

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Electronic technology, Communication and Information (ICETCI), IEEE International Conference on

作者： Ziqi Huang Weilin Xu Baolin Wei Xueming Wei Haiou Li Guangxi Key Laboratory of Precision Navigation Technology and Applications Guilin University of Electronic Science and Technology Guilin China Education Department of Guangxi Zhuang Autonomous Region Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Guilin China

The traditional passive noise-shaping SAR ADC has low power consumption but weak shaping capability; while the active noise-shaping SAR ADC has strong shaping capability but high-power consumption. The typical active-passive SAR ADC still consumes considerable power due to the use of OTA amplifier in the active part. In this paper, an active-passive noise-shaping SAR ADC is designed by using floating inversion amplifier (FIA) to replace the traditional OTA amplifier in the active part, which achieves a strong noise shaping capability and low power consumption at the same time. The second-order active-passive noise-shaping SAR ADC circuit designed by a 180nm CMOS process achieves 14.6-bit ENOB with 400KS/s sampling rate and consumes only 28.9µW.

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A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Science China(Information Sciences) 2020年第6期63卷 253-255页

作者： Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University Faculty of Information Technology Beijing University of Technology

Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution. Porphyrin-based hybrid transistors have emerged as promising candidates for photonic sensing application due to the

关键词： A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Fundamental Correction of Self-Absorption Effect on the Element Concentration Measurement in Laser Induced Plasmas

SSRN

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SSRN 2022年

作者： He, Gui-Cang Zhang, Kang-Wei Shi, Li-Na Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

For testing the fundamental correction of self-absorption (SA) effect on the element concentration measurement in laser induced plasmas (LIPs), the spectra of soil LIPs are measured using a typical experiment set up. The SA coefficient (SAλ) of a spectral line is directly obtained from the fitting of the Voigt function with the experiment data of that, which are used to correct the intensity of the spectral line, electron temperature, electron density, and the element concentration of the LIPs. The nine elements (Al, Ca, Fe, K, Mg, Na, Li, Cu, Ti) concentrations in the soil are analyzed, which are closer to the results measured by chemical methods than that obtained without considering SA correction. Especially, SAλ of some lines (Mg I at 518.36 nm, Na I at 497.85 nm, Cu I at 324.75 nm) are equal to 1, which do not affect concentrations of corresponding elements, but the concentrations accuracy of them are still improved. This indicate the elements concentrations not only are corrected by the intensity of the spectral lines, but also are corrected by plasmas properties. So, the SA effect on element concentration can be fundamental corrected in this method. © 2022, The Authors. All rights reserved.

关键词： Laser produced plasmas

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A Low Power OTA-C Filter for Wireless Body Area Networks

A Low Power OTA-C Filter for Wireless Body Area Networks

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International Conference on Integrated Circuits and Microsystems (ICICM)

作者： Jueyong Zhu Weilin Xu Xueming Wei Baolin Wei Haiou Li Education Department of Guangxi Zhuang Autonomous Region Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Guilin China Guangxi Key Laboratory of Precision Navigation Technology and Applications Guilin University of Electronic Science and Technology Guilin China

The traditional OTA structure uses the current splitting technology to decompose most of the current, which can effectively reduce the transconductance, but the excessive current splitting ratio will bring power loss. To solve this problem, a multiple-output fully differential (MOFD) cascode OTA structure is proposed. This structure can generate additional output by connecting the load to the current splitting branch, which can effectively utilize the current generated by the current splitting to reduce the power loss. In order to reduce the passband attenuation of the filter, the output stage adopts the cascode structure to increase the output impedance of the OTA, and the improved source negative feedback structure obtains lower transconductance and better linear range. Compared with the traditional structure, the number of OTAs of the fifth-order Butterworth low-pass filter with this OTA structure is reduced from 11 to 6, thereby reducing power consumption and achieving lower passband attenuation. The circuit is verified by 0.18 um CMOS process. The results show that the passband gain of the proposed filter is only −6.1 dB. −3dB frequency is 260 Hz. For 100 mV sinusoidal input signal at 50 Hz, the total harmonic distortion (THD) of the filter is about −66 dB and the power consumption is only 11.4 $\mu \mathbf{W}$ at 1.8 V supply.

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Designing Fragile-to-Strong Crystallization Kinetics in Confined Nanoscale Films for Improved Phase-Change Memory Performances

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SSRN 2024年

作者： Chen, Yimin Wang, Guoxiang Chen, Bin Gu, Chenjie Gao, Yixiao Liu, Zijun Zou, Qiushun Xu, Tiefeng Wang, Jun-Qiang Lotnyk, Andriy Shen, Xiang Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo315211 China Laboratory of Infrared Material and Devices Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province Advanced Technology Research Institute Ningbo University Ningbo315211 China Co. Ltd. Wuhan430205 China CAS Key Laboratory of Magnetic Materials and Devices Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology & Engineering Chinese Academy of Sciences Ningbo315201 China Permoserstrasse 15 LeipzigD-04318 Germany

Designing the crystallization process in confined nanoscale phase-change materials (PCMs) is crucial for developing universal memory and neuro-inspired computation. This requires a comprehensive understanding of phase-change behavior, especially in complex situations involving interfacial effects, nanoscale effects, and non-isothermal conditions. We designed 2D confined nanoscale GeTe films and investigated thickness dependent crystallization kinetics using non-isothermal Flash DSC method. Compared to conventional Ge2Sb2Te5, we found the nanoscale GeTe films exhibit both the faster crystallization and better amorphous thermal stability, which is attributed to the distinct fragile-to-strong crossover (FSC) behavior. Noteworthily, the FSC magnitude is always ~2 for 2D confined films, but the FSC temperature increases significantly as the film thickness decreases to nanometers. The thickness dependent crystal growth rate of confined PCMs can be depicted by an exponential expression, yielding the thickness of ~10 nm is optimal for phase-change memory. We confirmed the 10 nm GeTe based device has fast SET speed of 6 ns after applying 2.5 V voltage pulse. We also revealed the explored FSC behavior stems from the competition between heterogenous nucleation at interface and crystal growth in the inner film. These findings would be a useful guideline for future phase-change neuro-inspired computing and provide supports to data-intensive applications. © 2024, The Authors. All rights reserved.

关键词： Phase change memory

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Unsupervised Learning of Spike-Timing-Dependent Plasticity Based on a Neuromorphic Implementation

Unsupervised Learning of Spike-Timing-Dependent Plasticity B...

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IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS)

作者： Yi Zhong Zilin Wang Xiaoxin Cui Jian Cao Yuan Wang Key Laboratory of Microelectronic Devices and Circuits (MoE) MPW Center School of Integrated Circuits Peking University Beijing Laboratory of Future Integrated Circuit Technology and Science Peking University Beijing China

Spiking neural network is a promising endeavor to fulfill brain-like intelligence on the chip. Its learning rule, i.e., spike-timing-dependent plasticity (STDP), derived from neurobiology, is perceived as a powerful candidate to facilitate low-cost and high-performance unsupervised training. In this paper, we present a temporal coding based STDP learning method (TC-STDP) to verify the counter and look-up table based circuit design on a neuromorphic prototype chip. In order to perform on-chip STDP learning in an unsupervised manner, this paper concentrates more on detailing the experimental procedures and practical evaluations, where we introduce the matching score as a quantitative index to carry out label assignment and accuracy confirmation. Evaluation experiments demonstrate that the unsupervised STDP learning achieves best on-chip recognition accuracies of 93.51%, 80.33% on MNIST and EMNIST datasets, respectively. Moreover, experiments conducted on ModelNet40 3D dataset also validate the effectiveness of unsupervised STDP rule to perform possible incremental learning.

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-GaO Field Plate Schottky Barrier Diode With Superb Reverse Recovery for High-Efficiency DC–DC Converter

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IEEE Journal of the Electron devices Society 2022年 10卷 933-941页

作者： Wei Guo Guangzhong Jian Weibing Hao Feihong Wu Kai Zhou Jiahong Du Xuanze Zhou Qiming He Zhaoan Yu Xiaolong Zhao Guangwei Xu Shibing Long School of Microelectronics University of Science and Technology of China Hefei China Key Laboratory of Microelectronics Devices and Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

β-Ga2O3 Schottky barrier diodes with field plate (FP-SBDs) are fabricated and their SPICEcompatible model are constructed for double-pulse test circuit and DC-DC boost converter simulations. The reverse recovery time ( $t_{{\mathrm {rr}}}$ ) of the β-Ga2O3 SBD is 8.8 ns and its reverse recovery charge ( $Q_{{\mathrm {rr}}}$ ) is 8.33 nC when switching from a forward current of 1 A to a reverse bias voltage of 100 V with a di/dt of 400 A/μs, which is analogous with the prediction of our model. Device with the radius of 500 μm was fabricated, a current of 2 A can be obtained at the forward voltage of 2 V, meanwhile, the breakdown voltage is 467 V. The Ga2O3-based converter module after device packaging with TO-220 reveals a comparative efficiency to that of the SiC-based converter under multiple conditions, and reached up to 95.62% at the input voltage of 200 V. The decent performance of Ga2O3 FP-SBD and its DC-DC converter indicates great potential in power application.

关键词： Schottky barriers Performance evaluation Integrated circuit modeling Temperature Substrates Schottky diodes Plasma temperature

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High-Performance PANI Sensor on Silicon Nanowire Arrays for Sub-ppb NH3 Detection

SSRN

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SSRN 2024年

作者： Wang, Zhehang Lan, Kuibo Wang, Zhi Wei, Junqing Chen, Ruibing Qin, Guoxuan Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of Microelectronics Tianjin University Tianjin300072 China School of Pharmaceutical Science and Technology Tianjin University Tianjin300072 China Tianjin Key Laboratory of Film Electronic & Communication Devices School of Integrated Circuit Science and Engineering Tianjin University of Technology Tianjin300384 China

For industrial production and disease diagnosis, real-time detection of low concentrations of NH3 is crucial, necessitating a gas-sensitive sensor compatible with integrated processes and exhibiting excellent performance. Herein, we employed wet etching and rapid in situ polymerization on silicon nanowire substrates to grow polyaniline fibers, thereby fabricating NH3 gas sensors with p-p heterojunction and three-dimensional network structures. Characterization and gas sensing performance testing were conducted. The results demonstrate the outstanding NH3 detection capabilities of the sensor, providing stable responses down to concentrations as low as 1 ppb, which indicates its LOD is one to two orders of magnitude lower than current similar products. It also exhibited verified selectivity and long-term reliability. The excellent sensing performance is attributed to the high surface area from the silicon nanowire structure and efficient synergy of p-p heterojunction. Additionally, the influence of doping types of the substrates and annealing process were explored. This work serves as a reference for the design of silicon-based gas sensors with high sensitivity, low detection limits, and extended operational lifetimes, suitable for deployment in commercial integrated monitoring systems. © 2024, The Authors. All rights reserved.

关键词： Heterojunctions

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