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5th IEEE Electron devices technology and Manufacturing Conference, EDTM 2021

作者： Guo, Wei Jian, Guangzhong Wu, Feihong Zhou, Kai Xu, Guangwei Zhou, Xuanze He, Qiming Zhao, Xiaolong Long, Shibing School of Microelectronics University of Science and Technology of China Hefei230026 China Key Laboratory of Microelectronics Devices and Integration Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781728181769

The \beta-\text{Ga}_{2}O}_{3 Schottky barrier diode (SBD) is fabricated and actualized a breakdown voltage of 472 V. A SPICE model for \beta-\text{Ga}_{2}O}_{3 Sbd is derived from experimental results and applied to DC-DC converter circuit simulation. Then the \beta-\text{Ga}_{2}O}_{3 SBD is implemented in a DC-DC converter circuit and acquired the conversion efficiency of 94.8%, indicating the great potential of Ga2O3-based devices and circuits. © 2021 IEEE.

关键词： Schottky barrier diodes

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Demonstration of Planar Geometry PIN Photodetectors with GeSi/Ge Multiple Quantum Wells Hybrid Intrinsic Region on a Ge-on-Insulator Platform

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ACS Applied Electronic Materials 2025年第11期7卷 5205-5216页

作者： Junhao Du Xuewei Zhao Yuanhao Miao Jiale Su Ben Li Xiangliang Duan Tianyu Dong Jiahan Yu Hongxiao Lin Yuhui Ren Bo Wang Tianchun Ye Henry H. Radamson Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China；School of Integrated Circuits University of Chinese Academy of Sciences Beijing 100049 China Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou 510535 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China；Research and Development Center of Optoelectronic Hybrid IC Guangdong Greater Bay Area Institute of Integrated Circuit and System Guangzhou 510535 China；School of Integrated Circuits University of Chinese Academy of Sciences Beijing 100049 China

In this article, the first demonstration of planar geometry Ge PIN short-wave infrared (SWIR) photodetectors (PDs) on a germanium-on-insulator (GOI) platform has been presented. The intrinsic layer Ge contains four Ge0.86Si0.14multiple quantum wells (MQWs). The structural characteristics, material quality, and interface integrity of the PDs were investigated by using high-resolution transmission electron microscopy (HR-TEM) and high-resolution X-ray diffraction (HR-XRD). The devices exhibited a 3.12 mA/cm2dark current density and a low bulk leakage current density of 0.94 mA/cm2at −1 V. The integration of tensile-strained GeSi/Ge MQWs significantly enhanced the responsivity while maintaining a relatively lower dark current density, thereby broadening the spectral response range to 1700 nm. The notably high responsivities at 1310 and 1550 nm are 0.99 and 0.78 A/W, respectively, corresponding to external quantum efficiencies (EQEs) of 93.7 and 62.4%. Furthermore, the optical confinement effect inherent to this type of GOI structure contributed to a pronounced enhancement in the responsivity across the O, E, S, and C bands, with a peak responsivity of 1.11 A/W at 1475 nm. These findings underscore the potential of CMOS-compatible GOI platforms with MQWs hybrid intrinsic regions for diversified optoelectronic applications. Additionally, the demonstrated planar geometry Ge PIN PDs on insulator substrates exhibit excellent prospects for high-resolution SWIR imaging, which pave the way for advancements in next-generation photonic and sensing technologies.

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Optodevice-in-Sphere for Biaxial Tilt Sensing

Optodevice-in-Sphere for Biaxial Tilt Sensing

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IEEE SENSORS

作者： Ruoyao Huang Tingxuan Chen Ling Zhu Kwai Hei Li School of Microelectronics Southern University of Science and Technology Shenzhen China State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University) Shenzhen China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China

ISBN: (数字)9798350363517

ISBN: (纸本)9798350363524

A compact dual-axis tilt sensor utilizing chip-scale GaN optoelectronics is presented. The sensor comprises a cross-shaped optoelectronic device enclosed in a glass sphere, employing mineral oil as a liquid pendulum. The device integrates a light emitter and four independent detectors, designed to detect changes in the air-oil interface induced by dual-axis angular tilts. The sensor exhibits a linear response to an angle range of ±80° on both X- and Y-axes, with sensitivities of 40 nA/° and 37 nA/° respectively. It also demonstrates negligible inter-axis crosstalk, a resolution of up to 0.10, fast response, and high stability. Owing to its compact dimensions, the sensor facilitates integration into detection targets, rendering it an ideal candidate for real-time monitoring applications.

关键词： Liquids Oils Glass Robot sensing systems Optical crosstalk Light emitting diodes Minerals Optical sensors Substrates Testing

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Thermal stability of magnetron sputtering Ge-Ga-S films

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Chinese Physics B 2020年第8期29卷 485-488页

作者： Lei Niu Yimin Chen Xiang Shen Tiefeng Xu Laboratory of Infrared Materials and Devices&Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province Research Institute of Advanced TechnologyNingbo UniversityNingbo 315211China Department of Microelectronic Science and Engineering School of Physical Science and TechnologyNingbo UniversityNingbo 315211China

Ge-Ga-S thin films were deposited by magnetron sputtering with mean coordination number(MCN)ranging from 2.46 to *** physical properties of the Ge-Ga-S films,including optical band gap,refractive index,and thickness,vary with the time of heat *** on the analysis of the topology model,it is concluded that the Ge-Ga-S thin films with components close to the stoichiometric ratio can form the most Ga-S bonds and Ga-S bonds,and the physical properties of the Ge27.3Ga6.3S66.3(MCN=2.62)film are the most *** is an important reference for thin film photonic devices.

关键词： chalcogenide thin films refractive index optical band gap thermal stability

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Obtaining Ultra-High Hardness in Spark Plasma Sintered Ge40As40Se20 Bulk Glass

SSRN

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SSRN 2024年

作者： Xie, Shuangquan Gu, Jierong Jia, Guang Liu, Zijun Gu, Chenjie Gao, Yixiao Zheng, Wenfeng Liu, Ziqiang Shen, Xiang Chen, Yimin Laboratory of Infrared Material and Devices Advanced Technology Research Institute Ningbo University Ningbo315211 China Ningbo Institute of Oceanography Ningbo315832 China Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province Zhejiang Ningbo315211 China Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo315211 China

We performed mechanical milling and Spark Plasma Sintering technology to fabricate a high Ge content chalcogenide glass, the Ge40As40Se20 glass, which locates outside the Ge-As-Se glass-forming domain. By using the optimal ball milling time of 50 h and sintering stress of 37.5 MPa, the large size Ge40As40Se20 bulk glasses were obtained, which possesses both large Vickers hardness of 369 Hv and relative high optical transmission of 43% (@5 and 9 μm). Moreover, it was found there are pores in the sintered glasses more or less, and the pore size and number significantly affect transmission, i.e., the optimal Ge40As40Se20 bulk glasses were demonstrated has the smallest and least pores. The combination of mechanical milling and low-temperature sintering methods has been confirmed to improve the glass formability and then obtain the high Ge content component with a potential high hardness glass to break through the limited mechanical property of chalcogenides. © 2024, The Authors. All rights reserved.

关键词： Milling (machining)

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Highly Sensitive Humidity Sensor Based on Strontium-Doped Lanthanum Ferrite Nanofibers

SSRN

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SSRN 2023年

作者： Zhang, Ziyi Li, Fangxin Zheng, Yangong Faculty of Electrical Engineering and Computer Science Ningbo University Ningbo315211 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

Humidity sensors are the most widely applied sensors. Although some highly sensitive humidity sensors have been explored, devices that can accurately detect low humidity are still required. Improving the adsorption of water molecules by surface regulation is an effective way to enhance humidity sensitivity. In this study, electrospinning prepared a series of lanthanum ferrite samples doped with different concentrations of strontium. For the sample with a surface atomic ratio between strontium and lanthanum was approximately 0.2, there was a 6×104 times change in the resistance of the sensor to 90% relative humidity, and the response was 6.76 for 4% relative humidity. Negligible hysteresis, and excellent stability demonstrate the advantages of the strontium-doped lanthanum ferrite nanofibers. The sensing mechanism was discussed by measuring the change of band gap and work function of samples with different concentrations of strontium doping. Furthermore, suitable doping also decreased the adsorption energy and increased the charge transfer during the adsorption of water molecules on the surface of lanthanum ferrite based on the calculations. This study provides a new perspective for enhancing the sensitivity of humidity sensors via surface regulation. © 2023, The Authors. All rights reserved.

关键词： Electrospinning

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生物启发膜在水系镁离子电池阴极的界面工程

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Science China Materials 2024年第8期67卷 2558-2566页

作者：洛古子呷苟倩志罗号燃陈昭宇邓江斌王凯鑫何玉婷李英芳王磊张奔郑玉杰李猛 National Innovation Center for Industry-Education Integration of Energy Storage Technology Xuefeng Mountain Energy Equipment Safety National Observation and Research StationMOE Key Laboratory of Low-Grade Energy Utilization Technologies and SystemsCQU-NUS Renewable Energy Materials&Devices Joint LaboratoryCollege of Energy&Power EngineeringChongqing UniversityChongqing 400044China Chongqing Windmagics Weichu Energy Co. Ltd.Chongqing 401121China Southwest Technology and Engineering Research Institute Chongqing 400039China

受到水合镁离子的高脱溶能垒和不良界面水分解行为的限制,水系镁离子电池通常受制于缓慢的离子传输动力学和严重的阴极溶解.为了克服这些障碍,受细胞膜两亲性结构的启发,我们成功构建了一种由疏水性聚(3,4-乙二氧基噻吩)(PEDOT)和亲水性... 详细信息

受到水合镁离子的高脱溶能垒和不良界面水分解行为的限制,水系镁离子电池通常受制于缓慢的离子传输动力学和严重的阴极溶解.为了克服这些障碍,受细胞膜两亲性结构的启发,我们成功构建了一种由疏水性聚(3,4-乙二氧基噻吩)(PEDOT)和亲水性α-MnO_(2)基底组成的MnO_(2)碳基阴极.结合实验和理论计算结果分析,PEDOT层可以有效提高整体电极的导电性,降低水合Mg^(2+)的脱溶能垒,并抑制阴极溶解,从而提高复合电极的性能.因此,本文所制备的复合电极表现出优越的速率性能(58.4mA hg^(-1),3Ag^(-1))和增强的长期循环稳定性(1000个循环后85.92mA hg^(-1),2Ag^(-1)),优于原始的α-MnO_(2)阴极.这项基于生物启发设计理念的工作将为水合镁离子电池的发展提供创新方向.

关键词：镁离子电池复合电极生物启发传输动力学循环稳定性界面工程脱溶能垒

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The impact of 10 MeV electron irradiation on switching characteristics of SiC MOSFET devices

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microelectronics Reliability 2025年 171卷

作者： Fu, Xianghe Guo, Shuwen Peng, Wenbo Zhao, Xiaolong Zhu, Quanzhe He, Yongning Shaanxi Key Laboratory for Electronic Devices and Advanced Chips The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City School of Microelectronics Faculty of Electronic and Information Engineering Xi'an Jiaotong University Shaanxi Xi'an710049 China Shannxi Advangced Semiconductor Technology Center Co. Ltd. Shaanxi Xi'an710077 China

The rigorous requirements of applications such as deep space exploration, nuclear power plants, and nuclear submarines, pose stringent demands on the radiation resistance of power devices. SiC exhibits excellent radiation resistance compared to Si, while the application of SiC power devices in electron radiation environments still requires further theoretical and experimental refinement. In particular, there is a lack of research on the impact of electron radiation on the switching characteristics of SiC power devices. In this work, we studied the electron radiation effects on the dynamic and static characteristics of SiC VDMOSFET via theoretical modeling, simulation analysis, and 10 MeV irradiation experiments. We further analyzed their radiation damage mechanisms, especially for the damage on the gate structure and drift region. Radiation-induced damage to the gate oxide is the main cause of changes in device characteristics. The experimental results demonstrate a nonlinear correlation between the radiation dose and the threshold voltage of SiC MOSFET devices. With the increase in radiation dose, the switching-on delay time and switching-off voltage/current change rate of the devices decrease, while the switching-off delay time and switching-on voltage/current change rate increase. Consequently, there is a reduction in switching-on losses and an increase in switching-off losses, which affect the thermal generation during the switching process of the device. We also conducted a comparative analysis with Si MOSFET devices. The dynamic and static characteristics of SiC MOSFET devices are found to be less affected by radiation compared to Si MOSFET devices, exhibiting superior radiation resistance. © 2025

关键词： Silicon carbide

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Phase quasi-random squares spiral zone plates with single-focus diffraction

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Journal of the Optical Society of America A 2025年第6期42卷 834-841页

作者： Huakui Hu Weifeng Wu Huajie Xu Guoping Shi Jiangtao Ding Hailiang Li Research Center of Integrated Circuits Design and Semiconductor Processing Material Chizhou College Chizhou 247000 China Anhui Research Center of Semiconductor Industry Generic Technology Chizhou 247000 China College of Mechanical and Electrical Engineering Chizhou College Chizhou 247000 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

Due to the existence of orbital angular momentum, an optical vortex generated from spiral zone plates is an important approach for studying physics and detecting matter. However, the unneeded high-order diffraction inherent in traditional spiral zone plates will add background noise, leading to complication in subsequent analysis. In this paper, a single-focus spiral zone plate with an approximately sinusoidal transmittance, called phase quasi-random squares spiral zone plates (PQRSZPs), is designed. The key idea of the PQRSZPs is to transform the three-dimensional sinusoidal structure of the sinusoidal spiral zone plates into a three-dimensional square structure with a phase difference of ${2}\pi$ , making it easy to fabricate. Theoretical analysis and experimental results confirm that the PQRSZPs can effectively remove high-order diffraction and increase the diffraction intensity of the wanted order. Moreover, the helical phase structure with multiple topological charges of the output beams is also demonstrated. Due to this unique property, there are widespread applications in astrophysics and imaging.

关键词： Diffractive optical elements Optical elements Optical vortex beams Phase plates Spatial light modulators Zone plates

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Light quark energy loss in the flavor-dependent systems from holography

arXiv

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arXiv 2025年

作者： Zhang, Le Yin, Lu Zhou, Guo-Dong Fan, Chao-Jie Chen, Xun College of Physics and Electronic Science Hubei Normal University Huangshi435002 China Hubei Engineering Research Center for Micronano Optoelectronic Devices and Integration Huangshi435002 China Hubei Key Laboratory of Optoelectronic Conversion Materials and Devices Huangshi435002 China School of Nuclear Science and Technology University of South China Hengyang421001 China

Using the holographic model of finite-endpoint-momentum shooting string approach, we study the instantaneous energy loss of light quarks for the flavor-dependent systems with Nf = 0, Nf = 2, and Nf = 2 + 1 in the Einstein-Maxwell-dilaton (EMD) framework. In particular, we investigate for the first time the impact of the flavor content of the strongly coupled QGP medium on the instantaneous energy loss of light quarks. It turns out that the instantaneous energy loss of light quarks is smallest for Nf = 0, and adding u(d) quarks and s quark in the system increases this energy loss. In addition, we found that the instantaneous energy loss in the strongly coupled plasma is minimal near the critical temperature, but it increases as the system moves away from the critical endpoint due to rising temperature or chemical potential. Copyright © 2025, The Authors. All rights reserved.

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