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Which Activity Might Cause the Most Wear of Total Knee Prostheses During Daily Living? A Finite Element Analysis

Journal of Arthroplasty 2025年

作者： Mao, Zuming Tang, Jiawei Li, Rongkang Ma, Xu Zhu, Xiaoyu Zhao, Feng Key Laboratory of Biomechanics and Mechanobiology (Beihang University) Ministry of Education Beijing China Key Laboratory of Innovation and Transformation of Advanced Medical Devices Ministry of Industry and Information Technology Beijing China National Medical Innovation Platform for Industry-Education Integration in Advanced Medical Devices (Interdiscipline of Medicine and Engineering) Beijing China School of Biological Science and Medical Engineering Beihang University Beijing China

Background: The complications induced by wear debris were the main reasons for the long-term failure of total knee arthroplasty (TKA). Wear prediction based on level walking in the International Organization for Standardization (ISO) 14243 standard could not accurately reflect the activities of TKA patients, especially other activities of daily living (ADLs). This study aimed to investigate the biomechanical effects and evaluate the wear of the prostheses during different ADLs. Methods: There were seven finite element models used to predict the wear of prostheses within 5 million cycles during six ADLs presented in the ISO 14243 standard and American Society for Testing and Materials (ASTM) F3141 standard, including level walking in the ISO standard, straight walking (SWA), pivot turn (PTA), cross-over turn (CTA), stair ascent, stair descent, and sit-stand sit in the ASTM standard. Results: Although there was not much difference in the results between ISO walking and ASTM walking, the stress and wear depth on the insert of the other ADLs increased significantly, and the wear distribution was more dispersed. The maximum wear depth of PTA and CTA was higher than that of SWA, while the mass wear rates of stair descent, stair ascent, and sit-stand sit were much higher than those of PTA, CTA, and SWA. Conclusions: The wear of prostheses during various ADLs was distinctly different, suggesting that more attention should be paid to the influence of ADLs on the wear evaluation and prosthesis design. Total knee arthroplasty patients need to choose daily activities cautiously to prolong the life of the prosthesis. © 2025 Elsevier Inc.

关键词： activities of daily living ASTM F3141 finite element analysis knee prosthesis wear

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减缓自由阴离子迁移以缓解浓差极化用于高性能的聚合物锂金属电池

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Science Bulletin 2024年第11期69卷 1706-1715页

作者：崔满营秦棪阳李智超赵洪洋刘理民江智元曹振江赵坚蕴毛博阳于伟苏亚琼 RVasant Kumar 丁书江屈治国郗凯 School of Chemistry Engineering Research Center of Energy Storage Materials and DevicesMinistry of EducationNational Innovation Platform(Center)for Industry-Education Integration of Energy Storage TechnologyState Key Laboratory for Electrical Insulation and Power EquipmentXi’an Jiaotong UniversityXi’an 710049China MOE Key Laboratory of Thermo-Fluid Science and Engineering School of Energy and Power EngineeringXi’an Jiaotong UniversityXi’an 710049China School of Chemical Engineering and Technology Xi’an Jiaotong UniversityXi’an 710049China Department of Engineering University of CambridgeCambridge CB30FAUK Department of Materials Science and Metallurgy University of CambridgeCambridge CB30FSUK

Traditional dual-ion lithium salts have been widely used in solid polymer lithium-metal batteries(LMBs).Nevertheless, concentration polarization caused by uncontrolled migration of free anions has severely caused the growth of lithium dendrites. Although single-ion conductor polymers(SICP) have been developed to reduce concentration polarization, the poor ionic conductivity caused by low carrier concentration limits their application. Herein, a dual-salt quasi-solid polymer electrolyte(QSPE), containing the SICP network as a salt and traditional dual-ion lithium salt, is designed for retarding the movement of free anions and simultaneously providing sufficient effective carriers to alleviate concentration polarization. The dual salt network of this designed QSPE is prepared through in-situ crosslinking copolymerization of SICP monomer, regular ionic conductor, crosslinker with the presence of the dual-ion lithium salt,delivering a high lithium-ion transference number(0.75) and satisfactory ionic conductivity(1.16 × 10^(-3) S cm^(-1) at 30 ℃). Comprehensive characterizations combined with theoretical calculation demonstrate that polyanions from SICP exerts a potential repulsive effect on the transport of free anions to reduce concentration polarization inhibiting lithium dendrites. As a consequence, the Li||LiFePO_4 cell achieves a long-cycle stability for 2000 cycles and a 90% capacity retention at 30 ℃. This work provides a new perspective for reducing concentration polarization and simultaneously enabling enough lithiumions migration for high-performance polymer LMBs.

关键词： Polymer electrolyte Concentration polarization Energy storage materials Ion transport regulation Lithium-metal battery

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Periodic Defect Boundary-Mediated Activity of Electrocatalytic Oxygen Reduction Reactions of Fe-N-C Catalysts

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Renewables 2024年第3期2卷 213-221页

作者： Ziwei Wang Huiting Niu Tiantian Wu Shujiang Ding Bao Yu Xia Yaqiong Su School of Chemistry Engineering Research Center of Energy Storage Materials and Devices of Ministry of EducationNational Innovation Platform(Center)for Industry-Education Integration of Energy Storage TechnologyXi’an Jiaotong UniversityXi’an 710049 School of Chemistry and Chemical Engineering Key Laboratory of Material Chemistry for Energy Conversion and Storage(Ministry of Education)Hubei Key Laboratory of Material Chemistry and Service FailureHubei Engineering Research Center for Biomaterials and Medical Protective MaterialsWuhan National Laboratory for OptoelectronicsHuazhong University of Science and Technology(HUST)Wuhan 430074

The introduction of defects can adjust the activity of graphene-based single-atom catalysts for oxygen reduction reactions(ORR).Herein,we for the first time investigate the ORR catalytic activity of FeN_(4)sites embedded on graphene with four types of line-defective boundary via density functional theory *** results show that periodic line defects consisting of pentagon-pentagon-octagon(C_(585))or quad-octagon chains(C_(484))can significantly enhance ORR activity,owing to the optimized electronic structures of FeN_(4)*** spin magnetic moment and the valence state of the Fe atom are both well correlated with the ORR *** investigations further corroborate that FeN_(4)with a high degree of defects exhibits better ORR activity and stability compared to FeN_(4)sites of pristine graphene and commercial Pt/*** work unravels the influence of the periodic defect boundary on the ORR performance of Fe-N-C catalysts and paves the way towards the rational design of highly effective single-atom electrocatalysts.

关键词： density functional theory Fe-N-C catalysts oxygen reduction reaction periodic defect electrocatalyst

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Dilution-induced current-density increase in disordered organic semiconductor devices: A kinetic Monte Carlo study

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Physical Review Applied 2024年第1期21卷 014050-014050页

作者： Feiling Yang Harm van Eersel Jiawei Wang Quan Niu Peter A. Bobbert Reinder Coehoorn Feilong Liu Guofu Zhou Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute of Electronic Paper Displays South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 People’s Republic of China Department of Applied Physics and Institute for Complex Molecular Systems Eindhoven University of Technology Eindhoven University of Technology P.O. Box 513 Eindhoven Manitoba 5600 Netherlands Simbeyond B.V. Het Eeuwsel 57 Eindhoven AS 5612 Netherlands Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou 510640 People’s Republic of China Shenzhen Guohua Optoelectronics Tech. Co. Ltd. Shenzhen 518110 People’s Republic of China

Using three-dimensional kinetic Monte Carlo simulations, we systematically investigate the effect of dilution with an inert material on the current density in unipolar sandwich-type disordered organic semiconductor devices. Such a dilution technique was studied experimentally by Abbaszadeh et al. [Nat. Mater. 15, 628 (2016)], who observed a dilution-induced increase of the current density. The authors explained the effect as a result of a reduced density of trapped charges (“trap dilution”), assuming an exponential density of trap states. Our simulations support this explanation, and show under which conditions this trap-dilution-induced increase of the current density becomes more than outweighed by the negative effect of the dilution-induced decrease of the mobility. The effect is studied for sets of systematically varied material parameters, including systems with a Gaussian shape of the host and trap DOS.

关键词： Carrier dynamics Energy transport Optoelectronics Surface & interfacial phenomena Disordered systems Organic LEDs Organic semiconductors Monte Carlo methods

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Security Device Based on Terahertz Metasurface with Robust High-Order BIC

Security Device Based on Terahertz Metasurface with Robust H...

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International Symposium on Antennas, Propagation and EM Theory (ISAPE)

作者： Qun Ren Xiaoman Wang Yongshan Liang Luxing Zhang Xiuyu Wang Wei E. I. Sha School of Electrical and Information Engineering Tianjin University Tianjin China Purple Mountain Laboratories Nanjing China Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of Microelectronics Tianjin University Tianjin China Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic Engineering Zhejiang University Hangzhou China

ISBN: (数字)9798350353129

ISBN: (纸本)9798350353136

Metasurfaces are widely used in terahertz sensing and communication devices for their ability to modulate terahertz waves in multiple dimensions. Metasurface devices based on the Dynamic Heterogeneous Redundancy (DHR) architecture have been shown to enhance the confidentiality and security of terahertz wave wireless communication. High-order BICs are particularly intriguing because of their strong resilience to structural defects. As a result, we propose an aluminum-graphene hybrid metasurface with high-order BIC, and leverage the robustness of the high-order BIC to design security hardware based on DHR architecture.

关键词： Wireless communication Redundancy Wires Computer architecture Switches Metasurfaces Robustness Hardware Software Security

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Obtaining ultra-high hardness in spark plasma sintered Ge40As40Se20 bulk glass

SSRN

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SSRN 2023年

作者： Xie, Shuangquan Gu, Jierong Jia, Guang Liu, Zijun Gu, Chenjie Gao, Yixiao Zheng, Wenfeng Liu, Ziqiang Shen, Xiang Chen, Yimin Laboratory of Infrared Material and Devices Advanced Technology Research Institute Ningbo University Ningbo315211 China Ningbo Institute of Oceanography Ningbo315832 China Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province Zhejiang Ningbo315211 China Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo315211 China

In order to overcome the narrow glass-forming compositional range with traditional melt-quenching method, we here performed the mechanical milling and Spark Plasma Sintering technology to fabricate a high Ge content chalcogenide glass, the Ge40As40Se20 glass, which locates outside the Ge-As-Se glass-forming domain. By using the optimal ball milling time of 50 h and sintering stress of 37.5 MPa, the large size Ge40As40Se20 bulk glasses were obtained, which possesses both a large Vickers hardness of 369 Hv and a relative high infrared optical transmission of 43% (@5 and 9 μm). Moreover, it was found there are pores in the sintered glasses more or less, and the pore size and number significantly affect the transmission, i.e., the optimal Ge40As40Se20 bulk glasses were demonstrated has the smallest and least pores via scanning electron microscope. The combination of mechanical milling and low-temperature sintering methods has been confirmed can be used to improve the glass formability and then obtain the high Ge content component with a potential high hardness glass to break through the limited mechanical property of chalcogenides. © 2023, The Authors. All rights reserved.

关键词： Milling (machining)

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Realizing Force Sensing with InGaN/GaN Multi-Quantum Well Diode Chip

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Instrumentation 2024年第4期11卷 4-12页

作者： Feifei Qin Jiaqi Wu Shun Lu Xueyao Lu Yang Chen Xumin Gao Yue Cao Lei Zhang Xiaoxuan Wang Peng Wan Gangyi Zhu Yongjin Wang GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province College of Telecommunications and Information EngineeringNanjing University of Posts and TelecommunicationsNanjing 210003China Chongqing Institute of Green and Intelligent Technology Chinese Academy of SciencesChongqing 400714China State Key Laboratory of Digital Medical Engineering School of Biological Science and Medical EngineeringSoutheast UniversityNanjing 210096China College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China

Force sensing provides a crucial physical-electrical channel within sensing *** study showcases the fabrication and characterization of force sensors by integrating a polydimethylsiloxane(PDMS)mechanical module and an optical channel formed by two ideal InGaN/GaN light-emitting diodes(LEDs)with transmit-receive *** an emitter,the InGaN/GaN device(5 mm×4 mm)exhibits electroluminescence at 469 nm with an on-voltage of 2.33 *** a receiver,the response spectrum of InGaN/GaN devices spans from 350 to 480 nm,featuring a peak at 390 nm,rise time of~68.4 ms,and falling edge of~61.0 *** PDMS film can transform the force into deformation data and influence the signals in the optical *** drive current,the gap between the emitter and receiver,and distance between the LED and PDMS mechanical module all significantly influence the receiver *** from the integrated design,our PDMS-assisted force sensing model uses discrete structures to allow signal intensity *** finite element simulation and experimental results indicate that force of the designed PDMS film exhibits a linear relationship with z-axis displacement and photocurrent from 0 to 0.7 *** findings reveal that when the PDMS film height is 1.5 mm and the distance between the emitter and receiver is near,the photocurrent is ***,Ag film with a thickness of 100 nm considerably enhances the photocurrent response and signal stability in the sensing ***,a weight measurement demonstration is employed to demonstrate force *** system resolution is 1.23μA/N,and the measurement range is 0 to 0.7 N.

关键词： InGaN/GaN diodes chip force sensing coexistence of light emission and detection PDMS

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Highly Sensitive Metamaterial Plasmonic Sensor Based on Nanoimprinting

Highly Sensitive Metamaterial Plasmonic Sensor Based on Nano...

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OptoElectronics and Communications Conference, OECC

作者： Enlai Zheng Xuanming Zhang Fei Lou Xin Cheng Lei Lei State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University) Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China Department of Materials Science and Engineering Southern University of Science and Technology Shenzhen China

In this paper, we propose and experimentally demonstrate a highly sensitive plasmonic nanohole metasurface sensor using nanoimprinting and electron beam evaporation. A refractive index sensitivity of 516 nm/RIU has been successfully achieved. With the help of nanoimprinting, the proposed method exhibits intrinsic advantages in a simple fabrication process, high repeatability and low cost. Furthermore, the proposed method enables large-area fabrication, making the mass-production of the metamaterial sensor highly feasible.

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Comparison of α particle detectors based on single-crystal diamond films grown in two types of gas atmospheres by microwave plasma-assisted chemical vapor deposition

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International Journal of Minerals,Metallurgy and Materials 2020年第5期27卷 703-712页

作者： Yan-zhao Guo Jin-long Liu Jiang-wei Liu Yu-ting Zheng Yun Zhao Xiao-lu Yuan Zi-hao Guo Li-fu Hei Liang-xian Chen Jun-jun Wei Jian-peng Xing Cheng-ming Li Institute for Advanced Materials and Technology University of Science and Technology BeijingBeijing 100083China Optical and Electronic Materials Unit National Institute for Materials Science(NIMSIbaraki 305-0044Japan Key Laboratory of Microelectronic Device and Integration Technology Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China

Chemical vapor deposition(CVD)-grown diamond films have been developed as irradiation-resistant materials to replace or upgrade current detectors for use in extreme radiation environments. However, their sensitivity in practical applications has been inhibited by space charge stability issues caused by defects and impurities in pure diamond crystal materials. In this study, two high-quality CVD-grown single-crystal diamond(SCD) detectors with low content of nitrogen impurities were fabricated and characterized. The intrinsic properties of the SCD samples were characterized using Raman spectroscopy, stereomicroscopy, and X-ray diffraction with the rocking curve mode, cathode luminescence(CL), and infrared and ultraviolet-visible-near infrared spectroscopies. After packaging the detectors, the dark current and energy resolution under α particle irradiation were investigated. Dark currents of less than 5 pA at 100 V were obtained after annealing the electrodes, which is comparable with the optimal value previously reported. The detector that uses a diamond film with higher nitrogen content showed poor energy resolution, whereas the detector with more dislocations showed poor charge collection efficiency(CCE). This demonstrates that the nitrogen content in diamond has a significant effect on the energy resolution of detectors, while the dislocations in diamond largely contribute to the poor CCE of detectors.

关键词： single-crystal diamond nitrogen impurity detector αparticle

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The impact of 10 MeV electron irradiation on switching characteristics of SiC MOSFET devices

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microelectronics Reliability 2025年 171卷

作者： Fu, Xianghe Guo, Shuwen Peng, Wenbo Zhao, Xiaolong Zhu, Quanzhe He, Yongning Shaanxi Key Laboratory for Electronic Devices and Advanced Chips The Key Lab of Micro-Nano Electronics and System Integration of Xi'an City School of Microelectronics Faculty of Electronic and Information Engineering Xi'an Jiaotong University Shaanxi Xi'an710049 China Shannxi Advangced Semiconductor Technology Center Co. Ltd. Shaanxi Xi'an710077 China

The rigorous requirements of applications such as deep space exploration, nuclear power plants, and nuclear submarines, pose stringent demands on the radiation resistance of power devices. SiC exhibits excellent radiation resistance compared to Si, while the application of SiC power devices in electron radiation environments still requires further theoretical and experimental refinement. In particular, there is a lack of research on the impact of electron radiation on the switching characteristics of SiC power devices. In this work, we studied the electron radiation effects on the dynamic and static characteristics of SiC VDMOSFET via theoretical modeling, simulation analysis, and 10 MeV irradiation experiments. We further analyzed their radiation damage mechanisms, especially for the damage on the gate structure and drift region. Radiation-induced damage to the gate oxide is the main cause of changes in device characteristics. The experimental results demonstrate a nonlinear correlation between the radiation dose and the threshold voltage of SiC MOSFET devices. With the increase in radiation dose, the switching-on delay time and switching-off voltage/current change rate of the devices decrease, while the switching-off delay time and switching-on voltage/current change rate increase. Consequently, there is a reduction in switching-on losses and an increase in switching-off losses, which affect the thermal generation during the switching process of the device. We also conducted a comparative analysis with Si MOSFET devices. The dynamic and static characteristics of SiC MOSFET devices are found to be less affected by radiation compared to Si MOSFET devices, exhibiting superior radiation resistance. © 2025

关键词： Silicon carbide

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