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Plasmonic nanolaser with tunable emitting wavelength near 1 µm

Optics Letters 2025年第10期50卷 3305-3308页

作者： Wang, Yuhua Lu, Shudi Ma, Jingteng Lin, Runkang Wang, Peiling Xu, Yipeng Yue, Shizhong Wang, Zhijie Qu, Shengchun Huang, Le Liu, Kong Dong, Huafeng Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications School of Physics and Optoelectronic Engineering Guangdong University of Technology Guangzhou510006 China Laboratory of Solid-State Optoelectronics Information Technology Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China College of Physical Science and Technology Hebei Normal University of Science & Technology Qinhuangdao066004 China

Surface plasmon polaritons (SPPs) can produce a confined electromagnetic field near the metal–dielectric interface, allowing energy to be compressed into a scale smaller than the optical diffraction limit. The characteristic enables the fabrication of sub-wavelength-sized, ultra-low-threshold, ultrafast, specific polarization, room-temperature lasing nanolasers, which is especially meaningful for the lasers emitting long wavelength light. In this work, we developed a Cs0.1MA0.9SnI3 perovskite plasmonic laser based on a metal–insulator–semiconductor (MIS) structure, demonstrating a low threshold of 281 µJ cm−2, a tunable emitting wavelength from 973 to 1023 nm, strong mode confinement at the cutoff height of 90 nm, and a rapid response lifetime of 29.43 ps. Our study represents the first, to the best of our knowledge, theoretical design and experimental production of perovskite plasmonic nanolaser with a tunable emitting wavelength near 1 µm, filling a significant research gap and paving the way for the application of perovskite nanolasers in optoelectronic integration and information technology. © 2025 Optica Publishing Group. All rights are reserved.

关键词： Surface plasmon resonance

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A 20-Gb/s Low Power Inductorless TIA Design in 0.18μm CMOS 6

A 20-Gb/s Low Power Inductorless TIA Design in 0.18μm CMOS

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6th International Conference on Electronic Engineering and Informatics, EEI 2024

作者： Zeng, Zhiwei Xu, Weilin Mo, Peisi Li, Haiou Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Education Department of Guangxi Zhuang Autonomous Region Guilin China Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Applications Guilin China

ISBN: (纸本)9798350353594

The performance demands on transimpedance amplifiers (TIA) for optoelectronic conversion have increased with the rapid development of fiber optic communication technology. A modified feedforward common gate (MFCG) transimpedance amplifier with an inductor less topology is suggested for analogue front-end wireless fiber optic communications applications. This leads to a significant improvement in the circuit power consumption and band-width. An improved auxiliary amplifier without Miller effect is used instead of the traditional FCG common source amplifier to improve the bandwidth and reduce the phase jitter. An improved parallel active inductor is used instead of the traditional active inductor to obtain a more favorable bandwidth compensation effect. Small-signal analysis demonstrated that the M-FCG has a low input impedance, a large output impedance and transconductance con-version ratio. Based on a 0.18-μm CMOS process post-simulation results, the M-FCG circuit exhibits a transimpedance gain of 58.87 dBΩ, a bandwidth of 6.33 GHz, an equivalent input current noise of 27.02 pA/-VHz, a power consumption of 1.9 mW in the core circuit, and occupies a layout area of 0.0054 mm2. Additionally, the eye diagrams were generated using PRBS at a rate of 20 Gb/s. The resulting eye diagram displays openness and clarity, thereby meeting the requirement for 20 Gb/s code element transmission. © 2024 IEEE.

关键词： CMOS integrated circuits

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XOR spin logic operated by unipolar current based on field-free spin-orbit torque switching induced by a lateral interface

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Rare Metals 2024年第8期43卷 3868-3875页

作者： Yan-Ru Li Mei-Yin Yang Guo-Qiang Yu Bao-Shan Cui Jin-Biao Liu Yong-Liang Li Qi-Ming Shao Jun Luo Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences(IMECAS)Beijing 100029China University of Chinese Academy of Sciences(UCAS) Beijing 100049China Songshan Lake Materials Laboratory Dongguan 523808China Institute of Physics Chinese Academy of SciencesBeijing 100190China Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education Lanzhou UniversityLanzhou 730000China Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyHong Kong 999077China

Spin logics have emerged as a promising avenue for the development of logic-in-memory *** particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next *** this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic *** angle of the lateral interface is set at 45°relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall ***,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this *** on this field-free magnetic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall *** study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.

关键词： Filed-free magnetic switching Spin-orbit torque XOR logic gate Lateral interface

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Simulation of phase modulation using optical metalens for optical coherence tomography 14

Simulation of phase modulation using optical metalens for op...

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Optics in Health Care and Biomedical Optics XIV 2024

作者： Wang, Yiming Fan, Fan Ding, Xueqing Zhang, Wenchang Zhu, Jiang Key Laboratory Ministry of Education for Optoelectronic Measurement Technology and Instruments Beijing Information Science and Technology University Beijing100192 China Key Lab of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781510682122

Optical coherence tomography (OCT) has wide applications in diagnosing diseases, benefitting from its non-invasive, high-resolution, and real-time visualization of tissue microstructures. Still, this technology faces the mutual constraint between transverse resolution and depth of focus. Metalens can modulate the light fields at subwavelength scales, effectively enhancing the depth of focus of an OCT system. In this paper, a metalens designed for the OCT system is proposed. The metalens with different structures can generate various phase modulation outcomes. Using the finite-difference time-domain (FDTD) simulation, the impacts of the nanopillar parameters (e.g. height, diameter, and spacing) and the materials (e.g. Si, SiO2, and TiO2) on phase modulation have been analyzed. Based on the simulation results, the phase modulation capability of nanopillars is compromised at reduced heights, while excessively tall structures can adversely decrease transmittance. With a constant height, the radius of the nanopillars can be manipulated to achieve a phase delay of 2π. Furthermore, the propagation efficiency and the typical depth of focus were calculated from the results of the beam intensity distribution, indicating an enhanced imaging performance of the OCT system. The results provide a basis for designing the metalens used in the OCT systems. © 2024 SPIE.

关键词： Titanium dioxide

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Design of a Three-Dimensional Inlet Structure for Preventing Cell Deposition of Microfluidic Flow Cytometry 10

Design of a Three-Dimensional Inlet Structure for Preventing...

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10th International Symposium on Next Generation Electronics, ISNE 2022

作者： Hu, Yu Li, Ya Wang, Xu Du, Ziqiang Zhang, Wenchang Yang, Xiaonan Zhengzhou University School of Electrical and Information Engineering Zhengzhou China The First Affiliated Hospital of Zhengzhou University Department of Gastroenterology Zhengzhou China Institute of Microelectronics of the Chinese Academy Key Laboratory of Microelectronic Devices and Integration Technology Beijing China

ISBN: (纸本)9781665455251

Microfluidic flow cytometry has the advantage of simple structure and easy sample handling, with a promising application for point-of-care testing. Long time imaging at low flow rates leads to inlet cell deposition and inaccurate counting. In this paper, we propose a three-dimensional inlet structure that can effectively reduce cell deposition and achieve a smaller dead zone area. First, the geometric design of the structure is presented and the flow path and dead zone distribution of the structure are analysed. Then, the design method and preparation process of the structure are described. In order to test the optimised performance of the structure, analytical experiments were carried out and cell counts were analysed and counted using image detection methods. The results show that the junction structure is able to assist in sample feeding and increase the cell throughput values by approximately 21%. © 2023 IEEE.

关键词： Cells

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Optical coherence tomography with enhanced depth of focus using metalens 14

Optical coherence tomography with enhanced depth of focus us...

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Optics in Health Care and Biomedical Optics XIV 2024

作者： Ding, Xueqing Fan, Fan Wang, Yiming Zhang, Wenchang Zhu, Jiang Key Laboratory Ministry of Education for Optoelectronic Measurement Technology and Instruments Beijing Information Science and Technology University Beijing100192 China Key Lab of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781510682122

Optical coherence tomography (OCT) is widely used in ophthalmology and has been a standard method for diagnosing ocular diseases. Improving spatial resolution is crucial for the visualization of ocular microstructure. In conventional OCT systems, enhanced transverse resolution typically results in a reduction of depth of field (DOF). In our study, we designed four metalenses with different microstructures and then integrated them into the sample arm of an OCT imaging system. The metalens can modulate the amplitude and the phase of incident light in the sample. In this way, the depth of focus in the OCT system can be effectively enhanced while maintaining the transverse resolution. Also, the impact of different parameters, such as the size and the spacing of micro-units, has been discussed for OCT imaging. Finally, the experiment on the glass slides has been conducted to validate the performance of OCT imaging. The results demonstrate that the metalens with a specific microstructure could effectively enhance the DOF of OCT imaging. Furthermore, the enhanced depth of focus of the OCT system opens up new opportunities for investigating tissue morphology and function. © 2024 SPIE.

关键词： Optical coherence tomography

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Influence Of B Ions Doping on the Performance of P-Type Silicon Nanowire Field Effect Transistor Biosensor

Influence Of B Ions Doping on the Performance of P-Type Sili...

引用

2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Hu, Jiawei Zhang, Qingzhu Wei, Shuhua Zhang, Jing Zhang, Zhaohao Liu, Jin Biao Yan, Jiang School of Information Science and Technology North China University of Technology Beijing100144 China Key Laboratory of Microelectronic Devices and Integration Technology Chinese Academy of Sciences Institute of Microelectronics Beijing100029 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, the influence of different doping concentrations on the performance of p-type polycrystalline silicon nanowire (SiNW) field effect transistor biosensors was investigated. Silicon nanowire biosensors with different doping concentrations were botained by implanting B ions with various concentrations of 0, 1E13, 5E13, and 1E14 into the poly-silicon film. With the increase of the doping concentrations of B ions, the threshold voltage (Vth) of the SiNW biosensor moves to the positive direction. In addition, the switching ratios (Ion/Ioff) and the subthreshold swing (SS) is also significantly improved, the biosensor working in the subthreshold region has the best sensing sensitivity. © 2022 IEEE.

关键词： Field effect transistors

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Vapor growth of V‑doped MoS_(2)monolayers with enhanced B‑exciton emission and broad spectral response

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Frontiers of Optoelectronics 2023年第4期16卷 109-120页

作者： Biyuan Zheng Xingxia Sun Weihao Zheng Chenguang Zhu Chao Ma Anlian Pan Dong Li Shengman Li Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsHunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China College of Advanced Interdisciplinary Studies and Hunan Provincial Key Laboratory of Novel Nano Optoelectronic Information Materials and Devices National University of Defense TechnologyChangsha 410073China Wuhan National Laboratory for Optoelectronics(WNLO) Huazhong University of Science and Technology(HUST)Wuhan 430074China

Dynamically engineering the optical and electrical properties in two-dimensional(2D)materials is of great signifcance for designing the related functions and *** introduction of foreign-atoms has previously been proven to be a feasible way to tune the band structure and related properties of 3D materials;however,this approach still remains to be explored in 2D ***,we systematically demonstrate the growth of vanadium-doped molybdenum disulfde(V-doped MoS_(2))monolayers via an alkali metal-assisted chemical vapor deposition *** transmission electron microscopy demonstrated that V atoms substituted the Mo atoms and became uniformly distributed in the MoS_(2)*** was also confrmed by Raman and X-ray photoelectron ***-dependent photoluminescence spectra clearly revealed the enhanced B-exciton emission characteristics in the V-doped MoS_(2)monolayers(with low doping concentration).Most importantly,through temperature-dependent study,we observed efcient valley scattering of the B-exciton,greatly enhancing its emission *** transport experiments indicated that typical p-type conduction gradually arisen and was enhanced with increasing V composition in the V-doped MoS_(2),where a clear n-type behavior transited frst to ambipolar and then to lightly p-type charge carrier *** addition,visible to infrared wide-band photodetectors based on V-doped MoS_(2)monolayers(with low doping concentration)were *** V-doped MoS_(2)monolayers with distinct B-exciton emission,enhanced p-type conduction and broad spectral response can provide new platforms for probing new physics and ofer novel materials for optoelectronic applications.

关键词： Atomic substitution.V-doped MoS_(2) Distinct B-exciton Broad spectral response

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Dual-NMOS GaN Gate Driver with Active Bootstrap and Infinite-CMTI Level Shifter for Configurable dV/Dt and MHz Operation

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IEEE Transactions on Power Electronics 2025年

作者： Xiong, Yuhao Liu, Xihao Cao, Wenxing Guo, Zhuoqi Xue, Zhongming Geng, Li Xi'an Jiaotong University Shaanxi Provincial Key Laboratory of Electronic Devices and Advanced Chips Xi'an Key Laboratory of Micro-Nano Electronics and System Integration and School of Microelectronic Xi'an710049 China

This letter proposes a novel dual-NMOS GaN gate driver integrating an active bootstrap and a high common-mode transient immunity (CMTI) capacitive level shifter. Compared to conventional PMOS-based bootstrap circuits requiring extra level shifters, the proposed design utilizes bidirectional NMOS bootstrap switch pairs with dedicated on-off control circuit, providing reliable floating gate voltage with reduced on-chip area. The capacitive level shifter achieves theoretically infinite CMTI by isolating differential-mode logic signals from common-mode noise through current-mirror-based edge-detection and noise isolation. Furthermore, the dual-NMOS high-side buffer enables continuously adjustable dV/dt via adaptive Miller plateau detection and configurable gate charging currents, reducing switching losses and voltage spikes versus fixed gate-resistor drivers. Experimental results demonstrate a peak efficiency of 91.8% in a 12-to-1.8 V conversion and 4.6% efficiency improvement under 48 V input and 2 MHz switching frequency, validating its potential for high-frequency, high-density power applications such as automotive DC-DC converters. © 1986-2012 IEEE.

关键词： On-off control systems

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Organic cation-supported layered vanadate cathode for high-performance aqueous zinc-ion batteries

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Carbon Energy 2025年第2期7卷 1-12页

作者： Changding Wang Yingfang Li Sida Zhang Tian-Yi Sang|Yu Lei Ruiqi Liu Fu Wan Yuejiao Chen Weigen Chen|Yujie Zheng Shuhui Sun State Key Laboratory of Power Transmission Equipment Technology School of Electrical EngineeringNational Innovation Center for Industry-Education Integration of Energy Storage TechnologyChongqing UniversityChongqingChina Institute National de la Recherche Scientifique(INRS) CentreÉnergie Matériaux TélécommunicationsVarennesQuébecCanada MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems CQU-NUS Renewable Energy Materials&Devices Joint Laboratory School of Energy&Power EngineeringChongqing UniversityChongqingChina 4State Key Laboratory of Powder MetallurgyCentral South UniversityChangshaChina

Layered vanadates are ideal energy storage materials due to their multielectron redox reactions and excellent cation storage ***,their practical application still faces challenges,such as slow reaction kinetics and poor structural *** this study,we synthesized[Me_(2)NH_(2)]V_(3)O_(7)(MNVO),a layered vanadate with expended layer spacing and enhanced pH resistance,using a one-step simple hydrothermal gram-scale *** analyses and density functional theory(DFT)calculations revealed supportive ionic and hydrogen bonding interactions between the thin-layered[Me_(2)NH_(2)]+cation and[V_(3)O_(7)]-anion layers,clarifying the energy storage mechanism of the H^(+)/Zn^(2+)*** synergistic effect of these bonds and oxygen vacancies increased the electronic conductivity and significantly reduced the diffusion energy barrier of the insertion ions,thereby improving the rate capability of the *** an acidic electrolyte,aqueous zinc-ion batteries employing MNVO as the cathode exhibited a high specific capacity of 433 mAh g^(-1)at 0.1 A g^(-1).The prepared electrodes exhibited a maximum specific capacity of 237 mAh g^(-1)at 5 A g^(-1)and maintained a capacity retention of 83.5%after 10,000 *** work introduces a novel approach for advancing layered cathodes,paving the way for their practical application in energy storage devices.

关键词： [V_(3)O_(7)]-layers layered vanadates organic cations pH resistance zinc-ion batteries

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