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Progress of power field effect transistor based on ultra-wide bandgap Ga_2O_3 semiconductor material

Journal of Semiconductors 2019年第1期40卷 17-25页

作者： Hang Dong Huiwen Xue Qiming He Yuan Qin Guangzhong Jian Shibing Long Ming Liu Key Laboratory of Microelectronic Devices & Integration Technology Institute of Microelectronics of Chinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics University of Science and Technology of China

As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.

关键词： gallium oxide(Ga_2O_3) ultra-wide bandgap semiconductor power device field effect transistor(FET)

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Geometric Variability Aware Quantum Potential based Quasi-ballistic Compact Model for Stacked 6 nm-Thick Silicon Nanosheet GAA-FETs

Geometric Variability Aware Quantum Potential based Quasi-ba...

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International Electron devices Meeting (IEDM)

作者： Shijie Huang Zhenghua Wu Haoqing Xu Jingrui Guo Lihua Xu XinLv Duan Qian Chen Guanhua Yang Qingzhu Zhang Huaxiang Yin Lingfei Wang Ling Li Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China Advanced Integrated Circuits R&D Center Institute of Microelectronic of the Chinese Academy of Sciences Beijing China

Quantum-corrected quasi-ballistic compact model is developed for Stacked Silicon Nanosheet (SiNS) Gate-all-around (GAA) FETs. Theories of Density-Gradient-Poisson (DG-P), Singular perturbation and quasi-ballistic to interpret quantum mechanicals on density profile and charge transport are employed in analytical expressions of current, terminal charge and trans-capacitance. Besides, the model incorporates ultra-scaling induced subthreshold degradation and is rigidly verified by comparing to 6-nm-thick-SiNS based experiments (of both ${P-}$ and $N$ -GAAFET) and GTS simulations (of down to 15 nm channel length). Instead of classical Schrodinger-Poisson theory, it holds features of computation-efficiency and SPICE-compatibility. Especially, awareness of geometric variability enables performance and reliability assessments that statistical effects of stacked nanosheets on on-state voltage are predicted. Hence, this high-efficient quantum corrected model is promising in designing integrated circuits and developing a geometry aware design-technology co-optimization flow in the next generation technology node.

关键词： Electric potential Simulation Field effect transistors Gallium arsenide Logic gates Mathematical models Silicon

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Effectiveness of invertible neural network in variable material 3D printing: Application to screw-based material extrusion

Additive Manufacturing Frontiers

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Additive Manufacturing Frontiers 2025年第2期4卷

作者： Yunze Wang Beining Zhang Siwei Lu Chuncheng Yang Ling Wang Jiankang He Changning Sun Dichen Li State Key Laboratory for Manufacturing System Engineering School of Mechanical Engineering Xi’an Jiaotong University Xi’an 710054 China National Medical Products Administration (NMPA) Key Laboratory for Research and Evaluation of Additive Manufacturing Medical Devices Xi’an 710054 China State Industry-Education Integration Centre for Medical Technology Xi'an Jiaotong University Xi’an 710049 China

Variable material screw-based material extrusion (S-MEX) 3D printing technology provides a novel approach for fabricating composites with continuous material gradients. Nevertheless, achieving precise alignment between the process parameters and material compositions is challenging because of fluctuations in the melt rheological state caused by material variations. In this study, an invertible extrusion prediction model for 0–40 wt% short carbon fiber reinforced polyether-ether-ketone (SCF/PEEK) in the S-MEX process was established using an invertible neural network (INN) that demonstrated the capabilities of forward flow rate prediction and inverse process optimization with accuracies of 0.852 and 0.877, respectively. Moreover, a strategy for adjusting the screw speeds using process parameters obtained from the INN was developed to maintain a consistent flow rate during the variable material printing process. Benefiting from uniform flow, the linewidth accuracy was improved by 77 %, and the surface roughness was reduced by 51 %. Adjusting the process parameters by using an INN offers significant potential for flow rate control and the enhancement of the overall performance of variable material 3D printing.

关键词： Material extrusion 3D printing Multi-material Invertible neural network

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Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET

Demonstration of Vertically-stacked CVD Monolayer Channels: ...

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International Electron devices Meeting (IEDM)

作者： Xiong Xiong Anyu Tong Xin Wang Shiyuan Liu Xuefei Li Ru Huang Yanqing Wu Institute of Microelectronics Key Laboratory of Microelectronic Devices Circuits (MoE) Peking University Beijing Beijing China Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan China Frontiers Science Center for Nano-Optoelectronics Peking University Beijing China

ISBN: (纸本)9781665425735

Vertical stacking of atomic layer thin channel has been challenging due to the top-gate dielectric integration and complicated process, which typically yield in deteriorated performance. In this work, we demonstrate the 2-monolayer-MoSc-stacked nanosheets with a sequentially layer-by-layer fabrication process using a gate-a11-around fashion. Compared with the 1-channel back-gate transistor, the 2-channel stacked nanosheets (SN) transistor exhibits more than twice of gm improvement. The high I on >400 µA/µm per channel footprint at V d = 1 V is achieved due to short gate length of 100 nm, and low contact resistance of 0.77 k Ω*µm. Statistics of hundreds of devices with various channel lengths show the performance evolution trend and monolithic integration potential based on the large-scale CVD -grown 2D materials. Furthermore, the vertical-stacked MoS 2 /WSe 2 complementary FETs (CFETs) based on CVD grown are also demonstrated for the first time with about 50% footprint reduction, as compared to the planar devices.

关键词： Performance evaluation Stacking Monolithic integrated circuits Logic gates Ions Contact resistance Market research

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A wearable wireless bio-medical front-end circuit for monitoring electrophysiological signals 3

A wearable wireless bio-medical front-end circuit for monito...

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3rd International Conference on Biological Information and Biomedical Engineering, BIBE 2019

作者： Yang, Zheng Wang, Jingmin Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China College of Career Technology Hebei Normal University Shijiazhuang China

ISBN: (纸本)9783800750269

An ECG readout front-end for long-term sleep monitoring is presented in this paper and features high common-mode rejection ratio (CMRR) and low input referred noise. The proposed front-end circuit composed of an AC coupled chopping instrumentation amplifier (CCIA), a SC-filter and a 10 bit SAR ADC. The proposed circuit, built in standard 0.18μm CMOS technology, consumes 1.6 μW from 0.5 V. According to the simulation, the AC coupled IA's CMRR is over 90 dB and input referred noise is merely l.28 μVrms. With the input impedance boost loop, a constant 2.4GO input impedance is achieved (@ typical condition). With the chip, for ECG sensor data, a QRS detection algorithm for heart beat rate calculation is implemented to demonstrate smartphone computation feasibility for real-time signal processing. © VDE VERLAG GMBH · Berlin · Offenbach.

关键词： Electrocardiograms

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A Physical Current Model for Multi-Finger Gate Tunneling FET with Schottky Junction

A Physical Current Model for Multi-Finger Gate Tunneling FET...

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China Semiconductor technology International Conference (CSTIC)

作者： Yimei Li Jin Luo Qianqian Huang Xia An Le Ye Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China Peking University Information Technology Institute (Tianjin Binhai)

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

Compared with conventional tunneling field-effect transistor (TFET), a novel multi-finger gate tunneling FET with Schottky junction (mFSB-TFET) can effectively obtain the steeper subthreshold slope due to tunneling electric field coupling effect, the higher I on due to the introduced multi-finger gate and Schottky junction, while keeping the ultra-low I off simultaneously. To facilitate the circuit simulation by using this new device, in this paper, we establish a physical model of the channel surface potential in both gate handle region and gate finger region, and then further calculate the tunneling current by considering tunneling electric field coupling effect and the Schottky current by considering the equivalent barrier reduction respectively. The model results with different structure parameters agree well with the Sentautus TCAD simulation results, which shows the validity of this model.

关键词： Semiconductor device modeling Couplings Simulation Tunneling Logic gates Junctions Electric fields

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GaN chips for monitoring density and temperature of lead-acid batteries

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Chip 2025年

作者： Zhiyong Ye Ganyuan Deng Dongmiao Liu Jingyan Wang Xiaodi Gao Kwai Hei Li Ling Zhu College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province Shenzhen University Shenzhen 518060 China State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University Shenzhen 518060 China

Lead-acid batteries are indispensable in various applications, and monitoring their status is crucial. However, the existing sensing units for lead-acid batteries are limited by their bulky size, slow response time, and lack of temperature sensing and compensation capabilities. This work proposes a compact GaN-based sensing device to simultaneously measure electrolyte density and temperature. The device comprises a light-emitting diode (LED) and a photodetector (PD) integrated on a GaN-on-sapphire chip in a monolithic configuration. The forward voltage of the LED reflects the electrolyte temperature, while the photocurrent of the PD varies with electrolyte density due to optical reflection changes at the exposed sapphire interface. The measured signals are processed using a decoupling matrix to achieve temperature compensation. The device exhibits a sensitivity of -29.1 μA/(g/cm 3 ) for density in the range of 1.09 g/cm 3 to 1.29 g/cm 3 , and -1.07 mV/°C for temperature in the range of 25 °C to 45 °C. The performance of the device is also validated through comparisons with commercial meters and real-time monitoring during the charging and discharging of the batteries. The device has notable advantages in size, cost, and fast response/recovery time (134.3/201.4 ms), rendering it a promising tool for monitoring lead-acid batteries.

关键词： GaN Lead-acid battery density Battery temperature

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MXenes induce epitaxial growth of size-controlled noble nanometals:A case study for surface enhanced Raman scattering(SERS)

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Journal of Materials Science & technology 2020年第5期40卷 119-127页

作者： Renfei Cheng Tao Hu Minmin Hu Changji Li Yan Liang Zuohua Wang Hui Zhang Muchan Li Hailong Wang Hongxia Lu Yunyi Fu Hongwang Zhang Quan-Hong Yang Xiaohui Wang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China University of Chinese Academy of Sciences Beijing 100049China National Engineering Research Center for Equipment and Technology of Cold Strip Rolling College of Mechanical EngineeringYanshan UniversityQinhuangdao 066004China Department of Materials Science and Engineering Monash UniversityClaytonVictoria 3800Australia Institute of Microelectronics Key Laboratory of Microelectronic Devices and CircuitsPeking UniversityBeijing 100871China School of Materials Science and Engineering Zhengzhou UniversityZhengzhou 450001China School of Chemical Engineering&Technology Tianjin UniversityTianjin 300072China

Noble nanometals are of significance in both scientific interest and technological applications,which are usually obtained by conventional wet-chemical *** surfactants are always used in the synthesis to prevent unexpected overgrowth and aggregation of noble ***,the surfactants are hard to remove and may interfere with plasmonic and catalytic studies,remaining surfactant-free synthesis of noble nanometals a ***,we report an approach to epitaxial growth of sizecontrolled noble nanometals on *** piloted by density functional theory calculations,along with work function experimental determination,kinetic and spectroscopic studies,epitaxial growth of noble nanometals is initiated via a mechanism that involves an in situ redox *** the redox,MXenes as two-dimensional solid reductants whose work functions are compatible with the reduction potentials of noble metal cations,enable spontaneous donation of electrons from the MXenes to noble metal cations and reduce the cations into nanoscale metallic metals on the outmost surface of *** surfactants nor external reductants are used during the whole synthesis process,which addresses a long-standing interference issue of surfactant and external reductant in the conventional wet-chemical ***,the MXenes induced noble nanometals are ***,noble nanometals firmly anchored on MXenes exhibit excellent performance towards surface enhanced Raman *** developed strategy will promote the nanostructure-controlled synthesis of noble nanometals,offering new opportunities to further improve advanced functional properties towards practical applications.

关键词： Two-dimensional materials MXene In situ redox Noble metal SERS

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Sol-Gel Auto-Combustion Synthesis and Luminescence Properties of GdCaAl3O7:RE3+(RE=Eu, Tb, Eu@Tb) Phosphors For Near-Ultraviolet Light-Triggered Indoor Illumination

Research Square

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Research Square 2021年

作者： Zhou, Haoran Chen, Xin Jiang, Linwen W. Wu, Anhua Luo, Laihui Chen, Hongbing State Key Laboratory Base of Novel Functional Materials and Preparation Science Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province Ningbo University Ningbo315211 China Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai201800 China Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo315211 China

The color-tunable GdCaAl3O7: RE3+ (RE=Eu, Tb, Eu@Tb) phosphors were synthesized via an ultrafast sol-gel auto-combustion synthesis method. The XRD (X-ray diffraction) patterns confirmed the forming of GdCaAl3O7 tetragonal phase, and the SEM (Scanning electron microscopy) images indicated that the obtained products presented honeycomb-like structure due to the gas releasing during the auto-combustion process. The EDS (Energy dispersion spectra) results suggest that Eu3+ and Tb3+ were well incorporated into the host matrices of GdCaAl3O7. The luminescent properties, concentration quenching mechanism, energy transfer mechanism, luminescent dynamics, thermal stability and product practicability of GdCaAl3O7: R3+ (RE=Eu, Tb, Eu@Tb) phosphors were investigated systematically. All the GdCaAl3O7: RE3+ (RE=Eu, Tb, Eu@Tb) products presented the characteristic emission of doped RE3+. Using GdCaAl3O7: 50% Tb3+@3.0% Eu3+ as yellow-emitting phosphors in combination with commercial BAM: Eu2+ blue-emitting phosphors and a NUV chip can successfully package a warm white LED device with high color rendering index (CRI, 86.3) and low correlated color temperature (CCT, 3348 K) that was very suitable for near-ultraviolet light-triggered indoor illumination. © 2021, CC BY.

关键词： Sol-gels

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A 187-pW 51-ppm/°C Self-Adjusting Voltage Reference Circuit

A 187-pW 51-ppm/°C Self-Adjusting Voltage Reference Circuit

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International Conference on Solid-State and Integrated Circuit technology

作者： Mingwei ZhU Kaixuan Du Tianqiao Wu Changwu Song Le Ye Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking university Beijing China Information Technology Institute Peking University Tianjin Binhai China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

This paper proposed a novel pico-watt voltage reference (VR) circuit for the Internet of Things (IoT) applications. The core circuit consists of purely NMOS transistors operating in the sub-threshold region. This circuit contains a high-precision, high-power VR circuit (VRH) and a low-power, low-accuracy adjustable VR circuit (VRL). After initialization, the output voltage of VRL is adjusted based on the output voltage of VRH automatically. VRH is turned off to save energy when adjustment is completed. After waiting a period of time, VRH is turned on again to calibrate the output voltage of VRL. Thus, with self-adjusting topology, our proposed circuit achieves high accuracy and low power consumption. The output voltage is 168.5mV, while the power consumption is only 187pW and the temperature coefficient (TC) is 51 ppm/°C from -40°C to 85°C.

关键词： Voltage control Power demand MOS devices Very large scale integration Transistors Temperature control Voltage measurement

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