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Development and Prospect of Process Models and Simulation Methods for Atomic Layer Deposition

Journal of microelectronic Manufacturing 2019年第2期2卷 26-38页

作者： Lei Qu Rui Chen Xiaoting Li Jing Zhang Yanrong Wang Shuhua Wei Jiang Yan Yayi Wei North China University of Technology Beijing 100144 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China

Thin film deposition is one of the most important processes in IC manufacturing. In this paper, several typical models and numerical simulation methods for thin film deposition and atomic layer deposition are introduced. Several modeling methods based on the characteristics of atomic layer deposition are introduced, it includes geometric method, cellular automata and multiscale simulation. The principle of each model and simulation method is explained, and their advantages and disadvantages are analyzed. Finally, the development direction of thin film deposition and atomic layer deposition modeling is prospected, and some modeling ideas are also provided.

关键词： thin film deposition atomic layer deposition growth model prediction model simulation method

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Variable-range percolation in disordered organic semiconductors

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Physical Review Applied 2025年第6期23卷 064001-064001页

作者： Zhouyan Jiang Feiling Yang Yubai Li Haorong Zhu Jiawei Wang Guofu Zhou Feilong Liu Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays South China Academy of Advanced Optoelectronics South China Normal University Guangzhou 510006 Guangdong People’s Republic of China The International Joint Institute of Tianjin University Fuzhou Tianjin University 300072 Tianjin People’s Republic of China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences 100029 Beijing People’s Republic of China Shenzhen Guohua Optoelectronics Tech. Co. Ltd. Shenzhen 518110 Guangdong People’s Republic of China

Charge transport in disordered organic semiconductors is determined by charge carriers hopping through a series of molecules in an energetically disordered landscape, which can be viewed as a percolation problem in a three-dimensional network. Using combined three-dimensional kinetic Monte Carlo simulation and fat percolation theory, we systematically investigated the effect of variable-range hopping (VRH) on percolative charge transport in disordered organic semiconductors. Material dilution is a commonly used technique for bulk heterojunction optoelectronic devices, and has recently been proposed as a method for achieving a high-efficiency charge transport layer in light-emitting devices. In diluted materials, competition between energetic disorder–dominated percolation and spatial site disorder–dominated percolation needs to be clarified, which is theoretically identified and discussed in detail in this work. We find that for realistic molecular wave-function decay lengths, VRH plays a significant role in charge transport. At low temperatures or low active material fractions, VRH becomes even more important. Exponentially shaped deep trap states can further enhance VRH especially at low temperatures. With materials becoming more diluted, energetic disorder–dominated percolation gradually transforms into spatial site disorder–dominated percolation.

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Continuous-time digital twin with analog memristive neural ordinary differential equation solver

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Science advances 2025年第22期11卷 eadr7571页

作者： Hegan Chen Jichang Yang Jia Chen Songqi Wang Shaocong Wang Dingchen Wang Xinyu Tian Yifei Yu Xi Chen Yinan Lin Qifan Zhu Yangu He Xiaoshan Wu Yi Li Xinyuan Zhang Ning Lin Meng Xu Xumeng Zhang Xiaojuan Qi Zhongrui Wang Han Wang Dashan Shang Qi Liu Kwang-Ting Cheng Ming Liu Department of Electrical and Electronic Engineering the University of Hong Kong Hong Kong China. School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China. Center for Advanced Semiconductors and Integrated Circuits the University of Hong Kong Hong Kong China. Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Hong Kong China. School of Integrated Circuits Hubei Key Laboratory for Advanced Memories Huazhong University of Science and Technology Wuhan 430074 China. State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai 200433 China. State Key Lab of Fabrication Technologies for Integrated Circuits and Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China. University of Chinese Academy of Sciences Beijing 100049 China.

Digital twins, which replicate real-world entities through computational models, are transforming manufacturing and automation. While recent advances in machine learning have enabled data-driven digital twin development using discrete-time data and finite-depth models on digital hardware, these approaches face significant limitations. They struggle to capture continuous-time dynamics and model complex systems, and suffer from substantial time and energy overheads due to physically separated storage and processing as well as frequent analog-digital (A/D) conversions. Here, we propose a memristive neural ordinary differential equation (ODE) solver for digital twins. Our approach is intrinsically time-continuous using infinite-depth neural networks to model complex dynamics. Fully analog memristor arrays collocate storage and computation, addressing the von Neumann bottleneck and reducing A/D conversion requirements. We experimentally validate our solver on digital twins of HP variable-resistor model and Lorenz96 dynamics, demonstrating a 166.5-fold/369.3-fold speedup and a 499.0-fold/673.9-fold improvement in energy efficiency, respectively. This work paves the way to future digital twins for Industry 4.0.

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12-bit 2.6 GS/s RF DAC based on return-to-zero technology

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The Journal of China Universities of Posts and Telecommunications 2019年第4期26卷 36-42页

作者： Li Xiaopeng Wang Zhigong Zhang Yi Zhang Youtao Zhang Mi Institute of RF and OE ICs Southeast UniversityNanjing 210096China Nanjing Guobo Electronics Company Limited Nanjing 210016China Nanjing Electronic Devices Institute Nanjing 210016China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing 210046China College of Microelectronics Nanjing University of Posts and TelecommunicationsNanjing 210046China State Key Laboratory of Millimeter Waves Southeast UniversityNanjing 210096China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing 210016China

A 12-bit 2.6 GS/s radio frequency digital to analog converter(RF DAC)based on 1 um GaAs heterojunction bipolar transistor(HBT)process is *** DAC integrates a 4:1 multiplexer to reduce the data rate of input ports,which greatly facilitates the *** core adopts 4+8 segmented current steering structure.R-2R ladder network is used for 8 least significant bit(LSB)to realize binary current weighting and thermometer coding is used for 4 most significant bit(MSB).Return-to-zero(RZ)technology is used to expand the effective bandwidth of DAC output to the third Nyquist *** proposed DAC has a better output power flatness and spurious-free dynamic range(SFDR).Compared to traditional DAC,measured results demonstrate that the output power of this RZ DAC is increased by 33 dB and the SFDR is enhanced by 27 dB near the second Nyquist band.

关键词： DAC RZ Nyquist band

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Regulating Water Molecules via Bioinspired Covalent Organic Framework Membranes for Zn Metal Anodes

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Angewandte Chemie 2025年

作者： Sida Zhang Jiashu Chen Weigen Chen Yiwen Su Qianzhi Gou Ruduan Yuan Ziyi Wang Kaixin Wang Wentao Zhang Xiqian Hu Zhixian Zhang Pinyi Wang Fu Wan Jie Liu Beibei Li Yifei Wang Guangping Zheng Meng Li Jingyu Sun State Key Laboratory of Power Transmission Equipment Technology School of Electrical Engineering National Innovation Center for Industry-Education Integration of Energy Storage Chongqing University Chongqing 400044 China Department of Mechanical Engineering Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong 999077 China College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China Soochow Institute for Energy and Materials Innovation Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province Soochow University Suzhou 215006 China School of Building Services Science and Engineering Xi'an University of Architecture and Technology Xi'an 710055 China MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems CQU-NUS Renewable Energy Materials & Devices Joint Laboratory School of Energy and Power Engineering National Innovation Center for Industry-Education Integration of Energy Storage Chongqing University Chongqing 400044 China School of Electrical and Electronic Engineering Chongqing University of Technology Chongqing 400054 China College of Environmental Science and Engineering National Engineering Laboratory for Advanced Municipal Wastewater Treatment and Reuse Technology Beijing University of Technology Beijing 100124 China

The Zn metal anode in aqueous zinc-ion batteries (AZIBs) faces daunting challenges including undesired water-induced parasitic reactions and sluggish ion migration kinetics. Herein, we develop three-dimensional covalent organic framework (COF) membranes with bioinspired ion channels toward stabilized Zn anodes. These COFs, featured by zincophilic pyridine-N sites, enable effective regulation of water molecules at the anode-electrolyte interphase. Systematic experimental analysis and theoretical simulations reveal the optimized COF-320N membrane functions as ion pumps, accordingly facilitating Zn 2+ transport and inhibiting direct contact between Zn anode and free water molecules. Consequently, the bio-inspired strategy achieves improved Zn 2+ transference number (0.61), rapid de-solvation kinetics, and suppressed hydrogen evolution. The assembled Zn||MnO 2 pouch cell integrated with COF-320N membrane exhibits favorable electrochemical performances. Such a bioinspired concept for optimizing Zn anodes opens new pathways in developing advanced energy storage devices.

关键词： Aqueous zinc-ion batteries Covalent organic framework Bioinspired Ion channel Water molecule regulation

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Characteristics of Sb6Te4/VO2 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

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Chinese Physics Letters 2018年第9期35卷 53-56页

作者： Yi-Feng Hu Xuan Guo Qing-Qian Qin Tian-Shu Lai School of Mathematics and Physics Jiangsu University of TechnologyChangzhou 213000 State Key Laboratory of Optoelectronic Materials and Technology School of PhysicsSun Yat-Sen UniversityGuangzhou 510275 State Key Laboratory of Silicon Materials Zhejiang UniversityHangzhou 310027 Key Laboratory of Microelectronic Devices ＆ Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029

The Sb6 Te4/VO2 multilayer thin films are prepared by magnetron sputtering and the potential application in phase change memory is investigated in detail. Compared with Sb6 Te4, Sb6 Te4/VO2 multilayer composite thin films have higher phase change temperature and crystallization resistance, indicating better thermal stability and less power consumption. Also, Sb6 Te4/VO2 has a broader energy band of 1.58 eV and better data retention （125℃ for 103/）. The crystallization is suppressed by the multilayer interfaces in Sbf Te4/VO2 thin film with a smaller rms surface roughness for Sbf Te4/VO2 than monolayer Sb4Te6. The picosecond laser technology is applied to study the phase change speed. A short crystallization time of 5.21 ns is realized for the Sb6Te4 （2nm）/VO2 （8nm） thin film. The Sb6 Te4/VO2 multilayer thin film is a potential and competitive phase change material for its good thermal stability and fast phase change speed.

关键词： VO Te Characteristics of Sb6Te4/VO2 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory Sb

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In-memory search with learning to hash based on resistive memory for recommendation acceleration

npj Unconventional Computing

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npj Unconventional Computing 2024年第1期1卷 1-9页

作者： Fei Wang Woyu Zhang Zhi Li Rui Bao Xiaoxin Xu Chunmeng Dou Dashan Shang Ning Lin Zhongrui Wang Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Department of Electrical and Engineering the University of Hong Kong Hong Kong China ACCESS - AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong China School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China

Similarity search is essential in current artificial intelligence applications and widely utilized in various fields, such as recommender systems. However, the exponential growth of data poses significant challenges in search time and energy consumption on traditional digital hardware. Here, we propose a software-hardware co-optimization to address these challenges. On the software side, we employ a learning-to-hash method for vector encoding and achieve an approximate nearest neighbor search by calculating Hamming distance, thereby reducing computational complexity. On the hardware side, we leverage the resistance random-access memory crossbar array to implement the hash encoding process and the content-addressable memory with an in-memory computing paradigm to lower the energy consumption during searches. Simulations on the MovieLens dataset demonstrate that the implementation achieves comparable accuracy to software and reduces energy consumption by 30-fold compared to traditional digital systems. These results provide insight into the development of energy-efficient in-memory search systems for edge computing.

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Suppressed Dissolution of Fluorine-Rich SEI Enables Highly Reversible Zinc Metal Anode for Stable Aqueous Zinc-Ion Batteries

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Angewandte Chemie 2024年第32期136卷

作者： Yanan Zhang Shenyu Shen Kai Xi Peng Li Zihan Kang Jianyun Zhao Dandan Yin Yaqiong Su Hongyang Zhao Guanjie He Shujiang Ding School of Chemistry Engineering Research Center of Energy Storage Materials and Devices Ministry of Education National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology State Key Laboratory for Electrical Insulation and Power Equipment Xi'an Jiaotong University Xi'an 710049 P. R. China These authors contributed equally State Key Laboratory for Strength and Vibration of Mechanical Structures Xi'an Jiaotong University Xi'an 710049 P. R. China Christopher Ingold Laboratory Department of Chemistry University College London 20 Gordon Street London WC1H 0AJ UK

The instability of the solid electrolyte interface (SEI) is a critical challenge for the zinc metal anodes, leading to an erratic electrode/electrolyte interface and hydrogen evolution reaction (HER), ultimately resulting in anode failure. This study uncovers that the fluorine species dissolution is the root cause of SEI instability. To effectively suppress the F − dissolution, an introduction of a low-polarity molecule, 1,4-thioxane (TX), is proposed, which reinforces the stability of the fluorine-rich SEI. Moreover, the TX molecule has a strong affinity for coordinating with Zn 2+ and adsorbing at the electrode/electrolyte interface, thereby diminishing the activity of local water and consequently impeding SEI dissolution. The robust fluorine-rich SEI layer promotes the high durability of the zinc anode in repeated plating/stripping cycles, while concurrently suppressing HER and enhancing Coulombic efficiency. Notably, the symmetric cell with TX demonstrates exceptional electrochemical performance, sustaining over 500 hours at 20 mA cm −2 with 10 mAh cm −2 . Furthermore, the Zn||KVOH full cell exhibits excellent capacity retention, averaging 6.8 mAh cm −2 with 98 % retention after 400 cycles, even at high loading with a lean electrolyte. This work offers a novel perspective on SEI dissolution as a key factor in anode failure, providing valuable insights for the electrolyte design in energy storage devices.

关键词： Dendrite-Free Zn anode Zinc-ion Batteries Solid Electrolyte Interface Dissolution

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Elevating Discharge Voltage of Li2CO3-Routine Li−CO2Battery over 2.9 V at an Ultra-Wide Temperature Window

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Angewandte Chemie 2024年第34期136卷

作者： Ning Zhao Limin Liu Xuan Lu Yuyang Li Xiaosha Wu Shaochen Peng Jingwen Wei Yang Gao Hanqi Zhang Yiming Fan Zicheng Yin Rongfen Feng Ru Wang Prof. Xiaofei Hu Prof. Shujiang Ding Prof. Wenfeng Liu School of Chemistry School of Electrical Engineering and School of Aerospace Engineering Xi'an Jiaotong University ShaanXi 710061 China HeBei Key Laboratory of Applied Chemistry Yanshan University Qinhuangdao 066004 China Engineering Research Center of Energy Storage Materials and Devices Ministry of Education Xi'an Jiaotong University ShaanXi 710061 China National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology Xi'an Jiaotong University ShaanXi 710061 China

The Li−CO 2 batteries utilizing greenhouse gas CO 2 possess advantages of high energy density and environmental friendliness. However, these batteries following Li 2 CO 3 -product route typically exhibit low work voltage (<2.5 V) and energy efficiency. Herein, we have demonstrated for the first time that cobalt phthalocyanine (CoPc) as homogeneous catalyst can elevate the work plateau towards 2.98 V, which is higher than its theoretical discharge voltage without changing the Li 2 CO 3 -product route. This unprecedented discharge voltage is illustrated by mass spectrum and electrochemical analyses that CoPc has powerful adsorption capability with CO 2 (−7.484 kJ mol −1 ) and forms discharge intermediate of C 33 H 16 CoN 8 O 2 . Besides high discharge capacity of 18724 mAh g −1 and robust cyclability over 1600 hours (1000 mAh g −1 cut-off) at a current density of 100 mA g −1 , the batteries show high temperature adaptability (−30–80 °C). Our work is paving a promising avenue for the progress of high-efficiency Li−CO 2 batteries.

关键词： Li−CO2 battery Homogeneous catalyst Wide temperature range High discharge voltage

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10-nm Channel Length Indium-Tin-Oxide transistors with Ion = 1860 μA/μm, Gm = 1050 μS/μm at Vds = 1 V with BEOL Compatibility

10-nm Channel Length Indium-Tin-Oxide transistors with Ion =...

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International Electron devices Meeting (IEDM)

作者： Shengman Li Chengru Gu Xuefei Li Ru Huang Yanqing Wu Institute of Microelectronics and Key Laboratory of Microelectronic Devices and Circuits (MoE) Peking University Beijing Wuhan National High Magnetic Field Center and School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan China Frontiers Science Center for Nano-optoelectronics Peking University Beijing China

ISBN: (数字)9781728188881

ISBN: (纸本)9781728188898

In this paper, we successfully realized a shortest 10-nm channel length transistor based on ultrathin 3.5-nm indium tin oxide channel. Using 5-nm lanthanum-doped hafnium oxide (HfLaO) high- κ dielectric, the 10- nm channel ultrathin device architecture with wide bandgap exhibits excellent switching behavior with on/off ratio exceeding 10 10 and ultra-low leakage current of 40 fA/μm. Record-high on-state current of 1860 μA/μm and transconductance (g m ) of more than 1000 μS/μm have been achieved, benefited from a rather small contact resistance of 162 Ω·μm. R on of the 10-nm ITO transistor was smaller than 500 Ω·μm. Adopting the MIT Virtual Source (MVS) model, we extracted the saturation injection velocity ν x0 up to 8.8 × 10 6 cm/s and the resulting mean free path λ mfp of ITO transistor is 21.6 nm. Radio frequency transistor with 30-nm-long channel exhibited record high radio-frequency (RF) performance with small-signal current gain (f T ) of 20 GHz and maximum oscillation frequency (f max ) of 13 GHz. These two metrics contribute to √(f T × f max ) exceeding 15 GHz, confirming overwhelming superiority compared to RF transistors based on other ultrathin novel channel materials such as MoS 2 , BP and metal-oxides. Finally, we employed bootstrapped mode (BST) inverters to fabricate a 5-stage ring oscillator, and achieved the record-low propagation delay of 0.4 ns/stage among metal-oxides.

关键词： Ring oscillators Radio frequency Indium tin oxide Frequency measurement Transistors Sulfur Molybdenum

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