检索结果-内蒙古大学图书馆

High-throughput Synthesis of Solution-Processable van der Waals Heterostructures through Electrochemistry

Angewandte Chemie 2023年第28期135卷

作者： Dr. Huanhuan Shi Prof. Mengmeng Li Shuai Fu Dr. Christof Neumann Dr. Xiaodong Li Dr. Wenhui Niu Yunji Lee Prof. Mischa Bonn Dr. Hai I. Wang Prof. Andrey Turchanin Dr. Ali Shaygan Nia Dr. Sheng Yang Prof. Xinliang Feng Center for Advancing Electronics Dresden (cfaed) and Department of Chemistry and Food Chemistry Technische Universität Dresden Mommsenstrasse 4 01062 Dresden Germany Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China University of Chinese Academy of Sciences 100049 Beijing China Max Planck Institute for Polymer Research Ackermannweg 10 55128 Mainz Germany Institute of Physical Chemistry and Center for Energy and Environmental Chemistry Jena (CEEC Jena) Friedrich Schiller University Jena Lessingstrasse 10 07743 Jena Germany Max Planck Institute for microstructure physics Weinberg 2 06120 Halle Germany Frontiers Science Center for Transformative Molecules School of Chemistry and Chemical Engineering Shanghai Jiao Tong University 200240 Shanghai China

Two-dimensional van der Waals heterostructures (2D vdWHs) have recently gained widespread attention because of their abundant and exotic properties, which open up many new possibilities for next-generation nanoelectronics. However, practical applications remain challenging due to the lack of high-throughput techniques for fabricating high-quality vdWHs. Here, we demonstrate a general electrochemical strategy to prepare solution-processable high-quality vdWHs, in which electrostatic forces drive the stacking of electrochemically exfoliated individual assemblies with intact structures and clean interfaces into vdWHs with strong interlayer interactions. Thanks to the excellent combination of strong light absorption, interfacial charge transfer, and decent charge transport properties in individual layers, thin-film photodetectors based on graphene/In 2 Se 3 vdWHs exhibit great promise for near-infrared (NIR) photodetection, owing to a high responsivity (267 mA W −1 ), fast rise (72 ms) and decay (426 ms) times under NIR illumination. This approach enables various hybrid systems, including graphene/In 2 Se 3 , graphene/MoS 2 and graphene/MoSe 2 vdWHs, providing a broad avenue for exploring emerging electronic, photonic, and exotic quantum phenomena.

关键词： 2D Semiconductors Electrochemical Synthesis NIR Photodetectors Solution Processability Van Der Waals Heterostructures

来源：评论

学校读者我要写书评

暂无评论

Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire Transistor Parasitic Capacitance

Impact of Gate Asymmetry on Gate-All-Around Silicon Nanowire...

引用

International Conference on Solid-State and Integrated Circuit technology

作者： Xiaoqiao Dong Yuancheng Yang Gong Chen Shuang Sun Qifeng Cai Xiaokang Li Xia An Xiaoyan Xu Wanrong Zhang Ming Li Faculty of Information Technology Beijing University of Technology Beijing China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

In this paper, an analytical model is developed for parasitic gate capacitance of the gate-all-around (GAA) silicon nanowire MOSFETs (SNWT) with asymmetrical top and bottom gates. The modeling results show that the gate-to-source/drain spacer significantly impacts on the parasitic capacitance especially in the case of top-to-bottom gate misalignment. It is found that the optimized top-to-bottom gate misalignment may achieve smaller C p /C total so as to improve the AC performance of GAA SNWT. The developed capacitance model is more suitable for the actual process for further device design optimization.

关键词： Logic gates Parasitic capacitance Gallium arsenide Semiconductor device modeling MOSFET Silicon

来源：评论

学校读者我要写书评

暂无评论

Recovery of cycling-induced endurance failed HfO_x based memristive devices by utilizing oxygen plasma treatment

引用

Applied Physics Letters 2019年第24期115卷 243105-243105页

作者： Wang, Dong Yan, Shaoan Chen, Qilai He, Qiming Li, Gang Xiao, Yongguang Tang, Minghua Zheng, Xuejun School of Mechanical Engineering Xiangtan University Xiangtan Hunan 411105 China Key Laboratory of Welding Robot and Application Technology of Hunan Province School of Mechanical Engineering Xiangtan University Xiangtan Hunan 411105 China Key Laboratory of Microelectronics Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China School of Materials Science and Engineering Xiangtan University Xiangtan Hunan 411105 China

The oxygen ion (O2-) loss effect during resistive switching (RS) cycles will inevitably lead to endurance degradation or even failure in oxide-based memristive devices. In this Letter, we propose an effective way to r...

The oxygen ion (O^2-) loss effect during resistive switching (RS) cycles will inevitably lead to endurance degradation or even failure in oxide-based memristive devices. In this Letter, we propose an effective way to recover the cycling-induced endurance failed HfO_x based memristive devices by utilizing oxygen plasma treatment (OPT). In the as-fabricated Pt/HfO_x/Pt devices, a negative SET event is observed after consecutive normal RS cycles and eventually triggers endurance failure. The appearance of the intermediate resistance state at the initial stage of the negative SET cycle indicates a prominent reduction of the migration barrier of O^2-, which accounts for the occurrence of negative SET after increasing cycles. Then, we recover the devices from endurance failure by moderate OPT, which can supply the available O^2- in RS cycles. More importantly, the first recovered devices after endurance failure can be recovered again through OPT, which better proves the validity of the recovery method. This study could provide an effective approach for understanding and addressing the cycling-induced endurance failure issue in oxide-based memristive devices. © 2019 Author(s).

关键词：

来源：评论

学校读者我要写书评

暂无评论

A Self-Adaptive Digital Calibration Technique for MultiChannel High Resolution Capacitive SAR ADCs 12

A Self-Adaptive Digital Calibration Technique for MultiChann...

引用

2017 IEEE 12th International Conference on ASIC

作者： Binbin Lyu Wengao Lu Sijia Yang Zhongjian Chen Yacong Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Peking University Information Technology Institute(Tianjin Binhai)

ISBN: (纸本)9781509066261;9781509066254

This paper introduces a self-adaptive digital technique to calibrate multi-channel SAR *** than achieving higher resolution by adjusting the analog component values,this new digital method infers the capacitor weights of a SAR ADC with the help of a channel-shared high resolution sigma-delta ADC,which results in remarkable improvements in the capacitive SAR ADCs' *** increases from 11.06 bits to 12.67 *** digital calibration logic is based on LMS(least mean squares) and gradient descent.

关键词： SAR ADC multi-channel digital calibration

来源：评论

学校读者我要写书评

暂无评论

Resist model setup for negative tone development at 14NM node

Resist model setup for negative tone development at 14NM nod...

引用

China Semiconductor technology International Conference (CSTIC)

作者： Lijun Zhao Lisong Dong Libin Zhang Yayi Wei Tianchun Ye University of Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

The shrinkage effect of negative tone development (NTD) process is the primary cause of the mismatch between simulation data and experimental data. Therefore, the resist model is strongly required in the lithography simulation for NTD process. A practical flow of building a resist model is presented for 14nm NTD process, including test patterns design, model calibration and model verification. The test patterns are designed according to the optical parameters and resist parameters. Then, we use experimental data to calibrate and verify the model. The results show the simulation data have the same trend with experimental data, which indicates that the resist model has the capacity of capturing the resist shrinkage effect of NTD process.

关键词： Resists Calibration Semiconductor device modeling Data models Optical imaging Lithography Optical reflection

来源：评论

学校读者我要写书评

暂无评论

How to Report and Benchmark Emerging Field-Effect Transistors

arXiv

引用

arXiv 2022年

作者： Cheng, Zhihui Pang, Chin-Sheng Wang, Peiqi Le, Son T. Wu, Yanqing Shahrjerdi, Davood Radu, Iuliana Lemme, Max C. Peng, Lian-Mao Duan, Xiangfeng Chen, Zhihong Appenzeller, Joerg Koester, Steven J. Pop, Eric Franklin, Aaron D. Richter, Curt A. Nanoscale Device Characterization Division National Institute of Standards and Technology GaithersburgMD20899 United States Department of Electrical and Computer Engineering Purdue University West LafayetteIN47907 United States Department of Chemistry and Biochemistry University of California Los Angeles Los AngelesCA90095 United States Theiss Research La Jolla CA92037 United States School of Integrated Circuits Peking University Beijing100871 China Electrical and Computer Engineering New York University BrooklynNY11201 United States Center for Quantum Phenomena Physics Department New York University New YorkNY10003 United States IMEC Leuven Belgium RWTH Aachen University Electronic Devices Otto-Blumenthal-Str. 2 Aachen52074 Germany AMO GmbH Advanced Microelectronic Center Aachen Otto-Blumenthal-Str. 25 Aachen52074 Germany Key Laboratory for the Physics and Chemistry of Nanodevices Center for Carbon-Based Electronics Department of Electronics Peking University Beijing China Department of Electrical and Computer Engineering University of Minnesota MinneapolisMN55455 United States Department of Electrical Engineering Stanford University StanfordCA94305 United States Department of Electrical and Computer Engineering Duke University DurhamNC27708 United States Department of Chemistry Duke University DurhamNC27708 United States

The use of organic, oxide and low-dimensional materials in field-effect transistors has now been studied for decades. However, properly reporting and comparing device performance remains challenging due to the interdependency of multiple device parameters. The interdisciplinarity of this research community has also led to a lack of consistent reporting and benchmarking guidelines. Here we propose guidelines for reporting and benchmarking key field-effect transistor parameters and performance metrics. We provide an example of this reporting and benchmarking process by using a two-dimensional semiconductor field-effect transistor. Our guidelines should help promote an improved approach for assessing device performance in emerging field-effect transistors, helping the field to progress in a more consistent and meaningful way. © 2022, CC BY.

关键词： Benchmarking

来源：评论

学校读者我要写书评

暂无评论

A Comprehensive Extraction Method to Decompose Different Random Variation Impacts in bulk FinFET technology

A Comprehensive Extraction Method to Decompose Different Ran...

引用

International Conference on Solid-State and Integrated Circuit technology

作者： Zhe Zhang Runsheng Wang Xiaobo Jiang Xingsheng Wang Yangyuan Wang Ru Huang Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China Wuhan National Lab. for Optoelectronics Huazhong University of Science and Technology Wuhan China

A comprehensive variation extraction flow is proposed to separate different random variation sources in FinFET technology. Based on the understanding of the impacts of random dopant fluctuation (RDF), metal gate granularity (MGG), and line edge roughness (LER) on device figures of merit: threshold voltage (V th ) and subthreshold swing (SS), the LER component induced V th variation can be extracted using covariance matrix of SS and V th . The RDF and MGG can be separated from IV curves of FinFETs with different doping concentration. Results decomposed from the overall flow show great agreement with TCAD simulations. The proposed flow can achieve the accurate extraction of the three major variation sources in FinFET technology. Furthermore, the extendibility of the proposed method to understand the physical mechanisms of random variations is exhibited.

关键词： Resource description framework FinFETs Logic gates Semiconductor process modeling Fluctuations Doping

来源：评论

学校读者我要写书评

暂无评论

A review for compact model of graphene field-effect transistors

引用

Chinese Physics B 2017年第3期26卷 96-113页

作者：卢年端汪令飞李泠刘明 Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China

Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors （FETs） have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modem IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states （DOS）, and surface-potential-based compact model. Finally, an outlook of this field is briefly discussed.

关键词： two-dimensional material graphene field-effect transistor compact model

来源：评论

学校读者我要写书评

暂无评论

Investigation of current collapse mechanism of LPCVD Si3N4 passivated AlGaN/GaN HEMTs by fast soft-switched current-DLTS and CC-DLTFS 29

Investigation of current collapse mechanism of LPCVD Si3N4 p...

引用

29th International Symposium on Power Semiconductor devices and IC's, ISPSD 2017

作者： Wang, Xinhua Kang, Xuanwu Zhang, Jinhan Wei, Ke Huang, Sen Liu, Xinyu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (纸本)9781509051724

In this work, we investigated the current collapse mechanism of AlGaN/GaN high-electron mobility transistors (HEMTs) with LPCVD Si3N4 passivation. With newly developed fast soft-switched current-DLTS techniques, we achieved current acquisition within 100 ns after each stress pulse and with high sampling rate up to 5 MSa/s. A single trap level (∼66 meV) and capture cross section On (-1.05×10-20 cm-2) has been found within the AlGaN/GaN HEMTs surface. Moreover, this trap level is confirmed by low-temperature Constant-Capacitance Deep-Level Transient Fourier Spectroscopy (CC-DLTFS) measurement on GaN MIS-diode structure. Although this trap level is quite shallow, it can still lead to current collapse in LPCVD-SiNx-passivated AlGaN/GaN HEMTs due to the small On. © 2017 IEEJ.

关键词： Silicon compounds

来源：评论

学校读者我要写书评

暂无评论

A 10GS/s 0.13um SiGe Track-and-Hold Amplifier with 38GHz Analog Bandwidth 10

A 10GS/s 0.13um SiGe Track-and-Hold Amplifier with 38GHz Ana...

引用

10th International Conference on Microwave and Millimeter Wave technology, ICMMT 2018

作者： Shen, Yu Zhang, Yi Yang, Lei Li, Xiaopeng Liu, Zhonghua Zhang, Yin Guo, Yufeng National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing210023 China College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing210023 China State Key Laboratory of Millimeter Waves Nanjing210096 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Nanjing Electronic Devices Institute China Nanjing GuoBo Electronics Co. Ltd China

ISBN: (纸本)9781538624166

In this paper, a bipolar track-and-hold amplifier(THA), designed in a 0.13um SiGe technology is presented. A novel output buffer is proposed to enhance the hold-isolation and the bandwidth. The spurious free dynamic range (SFDR) is larger than 53.8dB for 1-3GHz input frequency with a 0.6Vpp input signal. The input bandwidth up to 38GHz is realized with a sampling rate of 10GS/s. The total DC power consumption is 586mW with a supply voltage of -5V. The layout size is 339x210 um2. As compared to the advanced silicon-based THAs, this work features high speed, low total harmonic distortion (THD), good linearity and wide bandwidth. © 2018 IEEE.

关键词： Bandwidth

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：