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14th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2018

作者： Li, Xiaopeng Wang, Zhigong Zhang, Yi Zhang, Youtao Zhang, Min Institute of RF - OE ICs Southeast University Nanjing210096 China Nanjing GuoBo Electronics Co. Ltd Nanjing210016 China Nanjing Electronic Devices Institute Nanjing210016 China National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing210046 China State Key Laboratory of Millimeter Waves Southeast University Nanjing210096 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Science and Technology on Monolithic Intergrated Circuits and Modules Laboratory Nanjing210016 China

ISBN: (纸本)9781538644409

In this paper, an ultra-high-speed ultra-wide-bandwidth one-bit analog-to-digital converter (ADC) is implemented. The chip uses a latched high-sensitivity comparator to achieve one-bit quantization, and an integrated 1:8 demultiplexer to reduce the data rate of the output ports, which is helpful for system applications. The chip is implemented with a 0.7μm InP DHBT process. Measurement results show that the sampling rate of the chip is up to 13GS/s, the analog input bandwidth is greater than 18GHz, the input sensitivity is less than -25dBm, and the power consumption is 1.2W. © 2018 IEEE.

关键词： Indium phosphide

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Vector Vortex Beam Arrays: Multichannel Spatially Nonhomogeneous Focused Vector Vortex Beams for Quantum Experiments (Advanced Optical Materials 8/2019)

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Advanced Optical Materials 2019年第8期7卷

作者： Enliang Wang Lina Shi Jiebin Niu Yilei Hua Hailiang Li Xiaoli Zhu Changqing Xie Tianchun Ye Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China

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P-10.4: Tuning Threshold Voltage of α-IGZO TFTs by Employing an Organic Molecular Doping

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SID Symposium Digest of Technical Papers 2019年第S1期50卷

作者： Yanjie Wang Jiawei Wang Liang Wang Chao Jiang CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology Beijing 100190 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China

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Progress in flexible organic thin-film transistors and integrated circuits

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Science Bulletin 2016年第14期61卷 1081-1096页

作者： Congyan Lu Zhuoyu Ji Guangwei Xu Wei Wang Lingfei Wang Zhiheng Han Ling Li Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences

Organic thin-film transistor constructs the headstone of flexible electronic world such as conformable sensor arrays and flexible active-matrix displays. With solutionprocessed methods, it forges ahead toward large-area, lowcost manufacturing goals. As an indispensable complement to traditional silicon-based transistors, organic thin-film field-effect transistors have made great progress in materials,performance, bending capacity, and integrated circuits in recent few years. Flexible transistors and circuitry have extremely promising application prospects and possess irreplaceable status in foldable displays, artificial skins and bendable smart cards. In this review, we will discuss the evolution of flexible organic transistors and integrated circuits in terms of material, fabrication as well as application.

关键词： OTFT Flexibility Integrated circuits

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Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors

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Physical Review B 2018年第24期98卷 245308-245308页

作者： Wei Wang Guangwei Xu M. Delwar H. Chowdhury Hong Wang Jae Kwang Um Zhuoyu Ji Nan Gao Zhiwei Zong Chong Bi Congyan Lu Nianduan Lu Writam Banerjee Jiafeng Feng Ling Li Andrey Kadashchuk Jin Jang Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China Department of Information Display Advanced Display Research Center Kyung Hee University Korea Key Laboratory of Wide Band Gap Semiconductor Materials and Devices Xidian University China State Key Laboratory of Magnetism Institute of Physics of Chinese Academy of Sciences Beijing 100029 China Institute of Physics National Academy of Sciences of Ukraine Prospect Nauky 46 03028 Kyiv Ukraine IMEC Kapeldreef 75 3001 Leuven Belgium

While it is known that the charge-carrier mobility in amorphous metal oxide semiconductor thin film transistors (TFT) deviates from Arrhenius temperature dependence, we found that the Hall mobility measured in amorphous In-Ga-Zn-O (a-IGZO) follows an Arrhenius relation surprisingly well. We explain these observations by the effect of strong vertical electric field created by the gate voltage, which facilitates direct tunneling of trapped carriers into the conductive band and leads to virtually temperature independent mobility. We present a generalized Arrhenius model based on the effective temperature concept. We show that our model allows quantitative description of the temperature dependence of the mobility in a-IGZO TFTs over a broad temperature range.

关键词： Carrier dynamics Field-effect transistors Transport phenomena Amorphous semiconductors Oxides

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Electric field tuning spin splitting in topological insulator quantum dots doped with a single magnetic ion

arXiv

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arXiv 2018年

作者： Li, Xiaojing Wu, Zhenhua Lou, Wenkai College of Physics and Energy Fujian Normal University Fuzhou350007 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China SKLSM Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China

We investigate theoretically the electron spin states in disk-shaped HgTe topological insulator quantum dots (TIQDs) containing a single magnetic Mn2+ ion. We show that the energy spectrum and the electron density distribution of the topological edge states in HgTe TIQD can be modulated significantly by the position of the magnetic Mn2+ ion. The numerical results further demonstrate that the electric fields not only tune the spin splittings of edge states via the sp-d exchange interaction between the electron (hole) and the magnetic Mn2+ ion but also give rise to the bright-to-dark transitions and anti-crossing behaviors in the photoluminescence (PL) spectra. Such spin properties of HgTe TIQDs with single Mn2+ ion as illustrated in this work could offer a new platform for topological electro-optical devices. Copyright © 2018, The Authors. All rights reserved.

关键词： Nanocrystals

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Simulation of doping effect for HfOi-based RRAM based on first-principles calculations

Simulation of doping effect for HfOi-based RRAM based on fir...

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2017 International Conference on Simulation of Semiconductor Processes and devices, SISPAD 2017

作者： Wei, Wei Chuai, Xichen Lu, Nianduan Wang, Yan Li, Ling Ye, Cong Liu, Ming Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China Hubei University Wuhan430062 China University of Chinese Academy of Sciences Beijing100049 China

ISBN: (纸本)9784863486102

A physical model of revealing the charge carrier transport characteristics based on first-principles calculations has been proposed for oxide-based RRAM. Based on the proposed model, we have investigated the influence of different kinds of dopants on transport characteristics in HfO2-based RRAM. The present method will be contributed to clearly understand the dopant effect, and then tune the RRAM performance and better design RRAM device. © 2017 The Japan Society of Applied Physics.

关键词： Activation energy

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Steep switch with hybrid operation mechanism for performance improvement (invited)

Steep switch with hybrid operation mechanism for performance...

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Berkeley Symposium on Energy Efficient Electronic Systems (E3S)

作者： Ru Huang Qianqian Huang Yang Zhao Cheng Chen Rundong Jia Lingyi Guo Yangyuan Wang Key Laboratory of Microelectronic Devices and Circuits (MOE) National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China

ISBN: (纸本)9781538632918

Tunnel FET (TFET) has attracted much attention as one of promising candidates of MOSFET for low power applications due to its capability of sub-60mV/dec subthreshold slope (SS) at room temperature [1]. It has a gated p-i-n structure switched by band-to-band tunneling (BTBT) mechanism. However, it is difficult to form abrupt source doping profile in the experiments for sharp band bending at the junction, resulting in relatively large SS of experimental demonstrations compared with ideally theoretical expectations. Another critical issue is that the on current (ION) is relatively low, especially for silicon-based TFET. The resulting issues of low ION, including large intrinsic delay and low gain, may also limit its applications. In recent years, most of TFET researchers focused on the methods for SS reduction and the I ON enhancement, including adoption of the small-bandgap materials, heterojunction [2], nanowire structure [3] and advanced annealing technology [4], etc. Mechanism engineering is focused in our research work as a different possible way to solve the TFET issues, not only improving I ON and SS values, but also enhancing comprehensive properties in terms of reduced Miller capacitance [5], immune to the super-linear onset of output characteristics [6] and reduced noise [7], etc.

关键词： TFETs Logic gates Ions Junctions Substrates MOSFET Tunneling

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Author Correction: How to report and benchmark emerging field-effect transistors

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Nature Electronics 2022年 620页

作者： Zhihui Cheng Son T. Le Curt A. Richter Chin-Sheng Pang Zhihong Chen Joerg Appenzeller Peiqi Wang Xiangfeng Duan Yanqing Wu Davood Shahrjerdi Iuliana Radu Max C. Lemme Lian-Mao Peng Steven J. Koester Eric Pop Aaron D. Franklin Nanoscale Device Characterization Division National Institute of Standards and Technology Gaithersburg MD USA Department of Electrical and Computer Engineering Purdue University West Lafayette IN USA Theiss Research La Jolla CA USA Department of Chemistry and Biochemistry University of California Los Angeles Los Angeles CA USA School of Integrated Circuits Peking University Beijing China Electrical and Computer Engineering New York University Brooklyn NY USA Center for Quantum Phenomena Physics Department New York University New York NY USA IMEC Leuven Belgium RWTH Aachen University Chair of Electronic Devices Aachen Germany AMO GmbH Advanced Microelectronic Center Aachen Aachen Germany Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics Department of Electronics Peking University Beijing China Department of Electrical and Computer Engineering University of Minnesota Minneapolis MN USA Department of Electrical Engineering Stanford University Stanford CA USA Department of Electrical and Computer Engineering Duke University Durham NC USA Department of Chemistry Duke University Durham NC USA

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Design guidelines of stochastic computing based on FinFET: A technology-circuit perspective

Design guidelines of stochastic computing based on FinFET: A...

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International Electron devices Meeting (IEDM)

作者： Yawen Zhang Runsheng Wang Xiaobo Jiang Zhenghan Lin Shaofeng Guo Zhe Zhang Zherui Zhang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China

ISBN: (纸本)9781538635605;9781538635599

Stochastic computing (SC) is a promising alternative to conventional deterministic computing, which enables ultralow power, high error-tolerance and massive parallelism, but not requiring new devices. In this paper, the feasibility of SC circuits based on state-of-the-art FinFET technology are investigated for the first time, with on-chip image processing application as an example. Practical technical issues are carefully examined, including static and transient device variations in 16/14nm FinFET. SC design optimization procedure is also proposed, which can considerably decrease its energy consumption without the penalty of accuracy. The results provide helpful guidelines for energy-efficient stochastic circuit design in new-paradigm computing.

关键词： Image edge detection Transient analysis Parallel processing FinFETs Logic gates Energy consumption

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