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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： Ruocheng Wang Wengao Lu Yajun Zhu Yuze Niu Yacong Zhang Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Peking University Information Technology Institute (Tianjin Binhai)

ISBN: (纸本)9781467397209

This paper proposes a current-mode bandgap referenc which employs a novel "coarse" voltage replication to offset the 2nd-order curvature due to base-emitter voltag of the BJT. The coarse replication is based on a proces insensitive transcendental equation which regulates th independent CTAT current. The bandgap reference which will be implemented in 0.35μm CMOS process has a low operating current of 0.85μA. Under a 2.6V to 4V supply its line sensitivity is 64ppm/V even in the wors condition, and its TC is only 1.67ppm/°C in th temperature range of-55°C to 115°C.

关键词： current-mode bandgap reference curvature compensation low temperature coefficient

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A 14-bit 8-column shared SAR ADC for 640×512 IRFPA 13

A 14-bit 8-column shared SAR ADC for 640×512 IRFPA

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： Zhaokai Liu Wengao Lu Yuze Niu Dahe Liu Yacong Zhang Zhongjian Chen Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics Peking University Peking University information technology institute (Tianjin Binhai)

ISBN: (纸本)9781467397209

This paper presents a new structure of column-level successive approximation register(SAR) analogue-to-digital converter(ADC) for Infrared Focal Plane Array. In this design, each column has a capacitance array and each comparator and SAR logic block are shared by 8 columns. By using this shared structure, we achieved smaller silicon area, lower power dissipation and lower noise. And shared structure leaves enough space for signal and control wires of ADC blocks, therefore relieves the mutual disturbance among wires. Also, correlated switches are used to cancel the offset generated by charge injection. The conversion accuracy of the proposed ADC is 14 bits and is used for a 640×512 array with a frame rate of 50 Hz.

关键词： ADC SAR A 14-bit 8-column shared SAR ADC for 640 IRFPA

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Surface Leakage Currents in SiN and A12O3 Passivated A1GaN/GaN High Electron Mobility Transistors

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中国物理快报（英文版） 2016年第6期33卷 108-111页

作者： Long Bai Wei Yan Zhao-Feng Li Xiang Yang Bo-Wen Zhang Li-Xin Tian Feng Zhang Engineering Research Center for Semiconductor Integration Technology Institute of SemiconductorsChinese Academy of Sciences Beijing 100083 Key Laboratory of Semiconductor Material Sciences Institute of SemiconductorsChinese Academy of Sciences Beijing 100083 Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices Beijing 100083

Surface leakage currents of AlGaN/GaN high electron mobility transistors are investigated by utilizing a circular double-gate structure to eliminate the influence of mesa leakage current. Different mechanisms are found under various passivation conditions. The mechanism of the surface leakage current with Al2O3 passivation follows the two-dimensional variable range hopping model, while the mechanism of the surface leakage current with SiN passivation follows the Frenkel-Poole trap assisted emission. Two trap levels are found in the trap-assisted emission. One trap level has a barrier height of 0.22 eV for the high electric field, and the other trap level has a barrier height of 0.12 eV for the low electric field.

关键词： Leakage currents

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P-24: Integrated Gate Driver for 2700-ppi 8K 120Hz Displays using a-IGZO TFTs

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SID Symposium Digest of Technical Papers 2018年第1期49卷

作者： Yuanfeng Chen Di Geng Jin Jang Department of Information Display and Advanced Display Research Center Kyung Hee University Seoul Korea Key Laboratory of Microelectronic Devices & Integrated Technology Chinese Academy of Sciences Beijing China

We propose a high-speed, fine-pitch gate driver using a-IGZO TFTs. The gate driver has a pitch of 18.6μm supporting the pixel density up to 2700 pixel-per-inch (ppi) when applied to two sides of the display. Moreover, the gate driver works within a very short stage period of 1μs, which corresponds to a refresh rate of 120Hz at 8K resolution. This study enables gate driver integration for high ppi a-IGZO displays, which can be used for mobile and AR/VR applications.

关键词： Oxide thin-film transistor (TFT) Gate Driver in Panel (GIP)

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High Performance Normally-off Al2O3/GaN MOSFETs with Record High Threshold Voltage by Interface Charge Engineering 13

High Performance Normally-off Al2O3/GaN MOSFETs with Record ...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)

作者： Ruopu Zhu Qi Zhou A.Zhang Y.Shi Z.Wang L.Liu B.Chen Y.Jin Wanjun Chen Bo Zhang State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronic and Solid-State Electronics University of Electronic Science and Technology of China

ISBN: (纸本)9781467397209

An efficient approach to engineering the AlO/GaN positive interface fixed charges(Q) by post-dielectric annealing in nitrogen is *** remarkable reduction of interface fixed charges from 1.44×10 to3×10 cm was observed,which leads to a record high threshold voltage(V) of +7.6 V obtained in the AlO/GaN *** positive interface charges were proposed originating from the N-vacancy and O-substitution at the AlO/GaN interface and validated by Ab initio *** device with dimensions of L/L/L/W = 2/1.5/5/50 μm delivers a high drain current density of 355 mA/mm.A high breakdown voltage of 1054 V @ 1 μA/mm was measured in the device with L of 20 μ*** results reveal that the method reported in this work is promising in pushing the V more positive and simultaneously achieving good device performance of normally-off GaN power devices.

关键词： GaN High Performance Normally-off Al2O3/GaN MOSFETs with Record High Threshold Voltage by Interface Charge Engineering

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A review for compact model of graphene field-effect transistors

arXiv

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arXiv 2017年

作者： Lu, Nianduan Wang, Lingfei Li, Ling Liu, Ming Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Nanjing210009 China

Graphene has attracted enormous interests due to its unique physical, mechanical, and electrical properties. Specially, graphene-based field-effect transistors (FETs) have evolved rapidly and are now considered as an option for conventional silicon devices. As a critical step in the design cycle of modern IC products, compact model refers to the development of models for integrated semiconductor devices for use in circuit simulations. The purpose of this review is to provide a theoretical description of current compact model of graphene field-effect transistors. Special attention is devoted to the charge sheet model, drift-diffusion model, Boltzmann equation, density of states (DOS), and surface-potential-based compact model. Finally, an outlook of this field is briefly *** Codes 65Zxx Copyright © 2017, The Authors. All rights reserved.

关键词： Field effect transistors

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Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

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Chinese Physics B 2016年第11期25卷 558-562页

作者：刘毅朱开贵钟汇才朱正勇于涛马苏德 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education Beihang University Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is *** samples show strong perpendicular magnetic anisotropy（PMA） when the thickness of CoFeB is 0.9 nm and 1.1 *** saturation magnetic moment and interface anisotropy constant are 1566 emu/cm3 and 3.75 erg/cm2,*** magnetic dead layer（MDL） is about 0.23 nm in this ***,strong capping layer thickness dependence is also *** strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 *** maintain PMA,the metal layer could not be too thin or thick in these *** oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.

关键词： anisotropy perpendicular junction annealing annealed thick saturation multilayer responsibility boron

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Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers

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Chinese Physics Letters 2016年第10期33卷 128-131页

作者：刘毅于涛朱正勇钟汇才朱开贵 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Integrated Circuit Advanced Process Center Institute of MicroelectronicsChinese Academy of Sciences Key Laboratory of Micro-nano Measurement-Manipulation and Physics(Ministry of Education) Beihang University

The dependence of perpendicular magnetic anisotropy （PMA） on the barrier layer MgO thickness in MgO/CoFeB /Ta multilayers is investigated. The results show that the strongest PMA occurs in a small window of about 2 4nm with the increase of MgO thickness from 1-1Onto. The crystalline degree of MgO and the change of interatomic distance along the out-of-plane direction may be the main reasons for the change of PMA in these multilayers. Moreover, the roughnesses of 2- and 4-nm-thick MgO samples are 3.163 and 1.8 nm, respectively, and both the samples show PMA. These results could be used to tune the magnetic characteristic of the ultra thin CoFeB film for future applications in perpendicular magnetic devices.

关键词： PMA MgO of Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers in nm Ta on

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9-3: BLA LTPS TFTs based μ-LED Display with Integrated Digital Driving

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SID Symposium Digest of Technical Papers 2019年第1期50卷

作者： Yuanfeng Chen Hyo-Min Kim Suhui Lee Duk Young Jeong Younghun Jung Sang Hem Lee Tak Jeong Jaeyoung Joo Jeongwook Hut Jong Hwa Choi Joon Seop Kwak Di Geng Jin Jang Advanced Display Research Center (ADRC) and Department of Information Display Kyung Hee University Seoul 02447 Korea Korea Photonics Technology Institute (KOPTI) Gwangju Korea LEDLITEK Co. Ltd 81 Geumhoseonmal-gil Bugang-myeon Sejong 30077 Korea Lumens Co. Ltd Gyeonggi-do Korea Dept. of Printed Electronics Engineering Sunchon National University Jeollanam-do Korea Key Laboratory of Microelectronic Devices & Integrated Technology Chinese Academy of Sciences Beijing China

We propose a blue laser annealed (BLA) LTPS TFT based μ-LED display with integrated gate driver and digital data driver. The BLA LTPS TFTs are fabricated using a blue diode laser based lateral crystallization method, which reduces the cost compare to ELA process while offering higher mobility for high current driving. The integrated gate driver and digital data driver enable simplified driving scheme, which further reduces the cost for external driver ICs. Together with the μ-LEDs which offer high brightness over 40,000 cd/m 2 , the fabricated 32 x 32 μ-LED display demonstrates potential approach for smart headlamp and intelligent lighting applications.

关键词： Low-temperature polycrystalline silicon (LTPS) blue laser annealing (BLA) thin-film transistor (TFT) integrated driving micro light emitting diode (μ-LED) display

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Temperature, electric-field, and carrier-density dependence of hopping magnetoresistivity in disordered organic semiconductors

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Physical Review B 2017年第16期96卷 165205-165205页

作者： Nianduan Lu Nan Gao Ling Li Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroElectronics of the Chinese Academy of Sciences No. 3 Bei-Tu-Cheng West Road Beijing 100029 China and Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China

Based on the extended variable range hopping mechanism in a disordered energy landscape with a Gaussian density of states, we determine the dependence of the magnetoresistivity on temperature, carrier density, magnetic field, and electric field. Experimental electric-field and temperature characteristics in device based on organic semiconductors are excellently reproduced with this unified description of the magnetoresistivity. We further show that the spin transport indeed can be explained by the fact that magnetic field will decrease the density of transport states and similar to the decrease of carrier density without it. We finally demonstrate that magnetoresistivity is strongly dependent on the carrier density; by changing the carrier density in the hopping system, the magnetoresistivity can increase more than 500 times.

关键词： Electric field effects Magnetoresistance Organic electronics Disordered systems Organic semiconductors

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