检索结果-内蒙古大学图书馆

Unified percolation model for bipolaron-assisted organic magnetoresistance in the unipolar transport regime

Physical Review B 2016年第7期94卷 075201-075201页

作者： Nan Gao Ling Li Nianduan Lu Changqing Xie Ming Liu Heinz Bässler Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China Bayreuth Institute of Macromolecular Research (BIMF) University of Bayreuth D-95440 Bayreuth Germany

The fact that in organic semiconductors the Hubbard energy is usually positive appears to be at variance with a bipolaron model to explain magnetoresistance (MR) in those systems. Employing percolation theory, we demonstrate that a moderately positive U is indeed compatible with the bipolaron concept for MR in unipolar current flow, provided that the system is energetically disordered, and the density of states (DOS) distribution is partially filled, so that the Fermi level overlaps with tail states of the DOS. By exploring a broad parameter space, we show that MR becomes maximal around U=0 and even diminishes at large negative values of U because of spin independent bipolaron dissociation. Trapping effects and reduced dimension enhance MR.

关键词： Magnetoresistance Polarons Organic semiconductors Percolation theory

来源：评论

学校读者我要写书评

暂无评论

Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices 16th

Low-frequency noise spectroscopy of bulk and border traps in...

引用

16th International Conference on Gettering and Defect Engineering in Semiconductor technology, GADEST 2015

作者： Simoen, Eddy Cretu, Bogdan Fang, Wen Aoulaiche, Marc Routoure, Jean-Marc Carin, Regis Luo, Jun Zhao, Chao Claeys, Cor Imec Kapeldreef 75 LeuvenB-3001 Belgium Depart. of Solid-State Sciences Ghent University Gent9000 Belgium ENSICAEN UMR 6072 GREYC CaenF-14050 France Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Micron Technology Belgium Imec Campus Belgium University of Caen UMR 6072 GREYC CaenF-14050 France E.E. Dept KU Leuven Leuven Belgium

ISBN: (纸本)9783038356080

The principles and application of Generation-Recombination (GR) noise spectroscopy will be outlined and illustrated for the case of traps in Ultra-Thin Buried Oxide Silicon-on-Insulator nMOSFETs and for vertical polycrystalline silicon nMOSFETs. It will be shown that for scaled devices the GR noise is originating from a single defect, giving rise to a so-called Random Telegraph Signal (RTS). Several methods will be described for an accurate extraction of the RTS parameters (amplitude, up and down time constant). It will be demonstrated that besides the deeplevel parameters also the position of the trap in the channel can be derived from a numerical modeling of the RTS amplitude. © (2016) Trans Tech Publications, Switzerland.

关键词： MOSFET devices

来源：评论

学校读者我要写书评

暂无评论

Graphene: Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer (Small 35/2017)

引用

Small 2017年第35期13卷

作者： Xiaolong Zhao Sen Liu Jiebin Niu Lei Liao Qi Liu Xiangheng Xiao Hangbing Lv Shibing Long Writam Banerjee Wenqing Li Shuyao Si Ming Liu Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application Wuhan University Wuhan 430072 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China

来源：评论

学校读者我要写书评

暂无评论

Cu BEOL compatible selector with high selectivity (> 107), extremely low off-current (∼pA) and high endurance (> 1010) 61

Cu BEOL compatible selector with high selectivity (> 107), e...

引用

61st IEEE International Electron devices Meeting, IEDM 2015

作者： Luo, Qing Xu, Xiaoxin Liu, Hongtao Lv, Hangbing Gong, Tiancheng Long, Shibing Liu, Qi Sun, Haitao Banerjee, Writam Li, Ling Lu, Nianduan Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Lab of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781467398930

Selector with high nonlinearity and low leakage current is critical to solve the sneaking current issue in crossbar memory array. In this work' we present a high performance Cu BEOL compatible threshold switching (TS) selector with several outstanding features' such as high nonlinearity (∼107)' ultra-low off-state leakage current (∼pA)' robust endurance (> 1010)' and sufficient on-state current density (∼1 MA/cm2). The observed threshold switching is resulted from the spontaneously rupture of conductive filament in doped HfO2 material. By introducing a tunneling layer in series with the TS layer' the leakage current of the selector is dramatically reduced by more than 5 orders of magnitude. The array level benchmark of this TS selector qualifies its promising potential for 3D storage application. © 2015 IEEE.

关键词： Leakage currents

来源：评论

学校读者我要写书评

暂无评论

Study on geometry of silicon PIN radiation detector for breakdown voltage improvement

Study on geometry of silicon PIN radiation detector for brea...

引用

作者： Liu, Hong-Zhi Yu, Min Shi, Bao-Hua Qi, Lin Wang, Shao-Nan Hu, An-Qi Du, Hong Wang, Jin-Yan Jin, Yu-Feng Yang, Bing National Key Laboratory of Nano/Micro Fabrication Technology Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing100871 China Department of Microelectronics College of Information Engineering North China University of Technology Beijing100144 China

The silicon PIN radiation detectors are always used under high working voltages. The breakdown voltage improvement has been researched in this paper. The resistivity of the silicon is larger than 20,000 Ω cm and the thickness is 1 mm. The field plate and field-limiting ring as well as round corners are applied for comprehensive improvement. The impact of field limiting ring distance to the main junction is tested by varying the ring distance from 30 μm to 260 μm. The simulation research on ring distance is carried out. The round corner radius is researched by varying the radius from 30 μm to 500 μm. Copyright © 2015 Inderscience Enterprises Ltd.

关键词： Electric breakdown

来源：评论

学校读者我要写书评

暂无评论

Improved low temperature solution synthesis of silicon nanoparticles for lithium-ion batteries

Improved low temperature solution synthesis of silicon nanop...

引用

2014 - China Functional Material technology and Industry Forum, CFMTIF 2014

作者： Chen, Ye Chuan Yang, Guang Zhao, Rui Xue, Wei Dong Institute of Applied Electrochemistry State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronic and Solid State Electronic University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (纸本)9783038353522

Silicon nanoparticles have extraordinary electrochemical performance for lithium-ion batteries. This paper gives an improved low temperature solution synthesis route of Si NPs. Reduced by magnesium and then passivated by four kinds of amines/amides respectively, stable yellow Si NPs ranging from 5-50 nm were prepared. When passivated by N-methyl-2-pyrrolidone, grape-like aggregation of 5-20 nm particles were generated. FTIR, XRD, SEM and Electrochemical Characterization were performed to confirm the product. The Si NPs passivated by NMP achieve good electrochemical performance with a first discharge capacity of 1154 mAhg-1 at a current density of 200 mAg-1 and good capacity retention of 95.3% after 5 cycles. © (2015) Trans Tech Publications, Switzerland.

关键词： Lithium-ion batteries

来源：评论

学校读者我要写书评

暂无评论

2D Resistive Switching Memories: Graphene and Related Materials for Resistive Random Access Memories (Adv. Electron. Mater. 8/2017)

引用

Advanced Electronic Materials 2017年第8期3卷

作者： Fei Hui Enric Grustan-Gutierrez Shibing Long Qi Liu Anna K. Ott Andrea C. Ferrari Mario Lanza Institute of Functional Nano and Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nanoscience and Technology Soochow University 199 Ren-Ai Road Suzhou 215123 China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing 100029 China Cambridge Graphene Centre University of Cambridge Cambridge CB3 0FA UK

来源：评论

学校读者我要写书评

暂无评论

引用

Journal of Semiconductors 2015年第9期36卷 66-70页

作者：方雯 Eddy Simoen Li Chikang Marc Aoulaiche 罗军赵超 Cor Claeys IMEC E.E. Depart. KU Leuven Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Graduate Institute of Photonics and Optoelectronics and Department of Electrical EngineeringNational Taiwan University Micron Technology Belgium IMEC Campus

This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.

关键词： random telegraph noise low frequency noise ultra-thin BOX silicon-on-insulator single charge trap

来源：评论

学校读者我要写书评

暂无评论

Cu BEOL compatible selector with high selectivity (>107), extremely low off-current (∼pA) and high endurance (>1010)

Cu BEOL compatible selector with high selectivity (>107), ex...

引用

International Electron devices Meeting (IEDM)

作者： Qing Luo Xiaoxin Xu Hongtao Liu Hangbing Lv Tiancheng Gong Shibing Long Qi Liu Haitao Sun Writam Banerjee Ling Li Nianduan Lu Ming Liu Lab of Nanofabrication and Novel Devices Integration Technology Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Chinese Academy of Sciences Beijing China

Selector with high nonlinearity and low leakage current is critical to solve the sneaking current issue in crossbar memory array. In this work, we present a high performance Cu BEOL compatible threshold switching (TS) selector with several outstanding features, such as high nonlinearity (~10 7 ), ultra-low off-state leakage current (~pA), robust endurance (> 10 10 ), and sufficient on-state current density (~1 MA/cm 2 ). The observed threshold switching is resulted from the spontaneously rupture of conductive filament in doped HfO 2 material. By introducing a tunneling layer in series with the TS layer, the leakage current of the selector is dramatically reduced by more than 5 orders of magnitude. The array level benchmark of this TS selector qualifies its promising potential for 3D storage application.

关键词： Very large scale integration Decision support systems Power demand Plugs Hafnium compounds Switches

来源：评论

学校读者我要写书评

暂无评论

AlO_x prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

引用

Chinese Physics B 2014年第2期23卷 448-451页

作者：仇洪波李惠琪刘邦武张祥沈泽南 School of Materials Science and Engineering Shandong University of Science and Technology Key Laboratory of Microelectronic Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10^12 cm%-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software （PC1D）. With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.

关键词： AlOx atomic layer deposition p-type negative charge density solar cell analyzing software

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：