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2011 11th IEEE International Conference on Nanotechnology, NANO 2011

作者： Zhang, Lining He, Jin Ma, Chenyue Zhou, Xingye Bian, Wei Li, Lin Chan, Mansun TSRC Key Laboratory of Microelectronic Devices and Circuits Peking University Beijing China Peking University Shenzhen SOC Key Laboratory PKU-HKUST Shenzhen Institute Shenzhen China ECE Hong Kong University of Science and Technology Clearwater Bay Kowloon Hong Kong

ISBN: (纸本)9781457715143

An oxide/silicon core/shell nanowire (OSCSNW) MOSFET is proposed. Its fabrication process and performance are described in detail. The I ON/IOFF ratio of the OSCSNW is improved by more than one order of magnitude compared with traditional nanowire (TNW) devices. Excellent scaling characteristics are also observed from the OSCSNW MOSFETs with minimal threshold voltage roll-off, drain induced barrier lowing and subthreshold slope degradation. Furthermore, the high frequency characteristics of OSCSNWs are also investigated. © 2011 IEEE.

关键词： Nanowires

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Coupled THz Waveguide Utilizing Surface Plasmon Polaritons on Thin Dielectric Slab Sandwiched between Two Corrugated Metallic Claddings

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Chinese Physics Letters 2010年第4期27卷 147-150页

作者：田东斌张怀武文歧业谢云松宋远强 State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronic and SoIid-state Electronic University of Electronic Science and Technology of China Chengdu 610054

We present a comprehensive experimental study of terahertz （THz） wave propagation utilizing surface plasmon polaritons （SPPs） on the interfaces of a thin dielectric core layer sandwiched between two corrugated metallic claddings. THz wave impinges on the structured surfaces at normal incidence. Long-lasting oscillation propagation features are observed in the temporal waveform after traveling through the periodic arrays. The enhanced THz transmission can be achieved due to the coupling between incident waves to SPPs at the bottom and top interfaces. The finite element method is used to simulate the field distribution and the transmission mode in the waveguide. The hybrid waveguide with low absorption has great potential applications in THz integrated devices.

关键词： Computational physics Condensed matter: electrical magnetic and optical Electronics and devices Surfaces interfaces and thin films

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An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

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Chinese Physics B 2010年第4期19卷 398-401页

作者：张立宁何进周旺陈林徐艺文 Tera-Scale Research Centre Key Laboratory of Microelectronic Devices and Circuits of Ministry of EducationSchool of Electronics Engineering and Computer SciencePeking University Research Centre of Micro-& Nano-Device and Technology The Key Laboratory of Integrated MicrosystemsPeking University Shenzhen Graduate School

This paper studies an oxide/silicon core/shell nanowire MOSFET （OS-CSNM）. Through three-dimensional device simulations, we have demonstrated that the OS-CSNM has a lower leakage current and higher Ion/Ioff ratio after intro- ducing the oxide core into a traditional nanowire MOSFET （TNM）. The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off, drain induced barrier lowering and subthreshold swing degradation. Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.

关键词： core/shell nanowire nanowire MOSFET

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Tuning the threshold voltage of low voltage organic thin film transistor using light illumination

Tuning the threshold voltage of low voltage organic thin fil...

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2010 10th IEEE International Conference on Solid-State and Integrated Circuit technology

作者： Shang, Liwei Liu, Ming Ji, Zhuoyu Chen, Yingpin Wang, Hong Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781424457984

High and random voltages are big challenges for practical applications of organic thin film transistors (OTFTs). Herein, a route to achieve devices with both low operating voltages (Vop) and tunable threshold voltages (VTH) was proposed. The Vop was reduced to be less 3 V without lowering the mobility and the ratio of on/off current using a 30 nm Al2O3 insulator film fabricated by atomic layer deposition technology. And the VTH was tuned from -1.7 V to 3.8 V by using light illumination combined with voltage pulse on gate electrodes. The tuning range is nearly twice of the operating voltage. And the tuning process is highly reversible. Uniform VTH of OTFTs can be obtained without changing process or materials. ©2010 IEEE.

关键词： Threshold voltage

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A low-noise interface circuit for MEMS vibratory gyroscope

A low-noise interface circuit for MEMS vibratory gyroscope

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2010 10th IEEE International Conference on Solid-State and Integrated Circuit technology

作者： Fang, Ran Lu, Wengao Liu, Chang Chen, Zhongjian Ju, Yuan Wang, Guannan Ji, Lijiu Yu, Dunshan Key Laboratory of Microelectronic Devices and Circuit Department of Microelectronics Peking University Beijing 100871 China School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA 30332 United States

ISBN: (纸本)9781424457984

A CMOS ASIC has been designed and implemented for readout and control of MEMS vibratory gyroscopes. A low noise design is achieved by using the technique of sinusoidal chopper stabilization with a chopping frequency of 2MHz, which will effectively suppress the low frequency noise. A closed loop control method in driving mode is presented. The Chip is fabricated in a 0.35μm standard CMOS process with an area of 2.5×2.5mm2. The test is performed with a vibratory gyroscope on the condition of closed-loop control, and the measurement result shows a detecting resolution of 6aF in 100Hz bandwidth from a single 5V supply. ©2010 IEEE.

关键词： Timing circuits

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Double Wire-Grid Terahertz Polarizer on Low-Loss Polymer Substrates

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Chinese Physics Letters 2010年第10期27卷 125-127页

作者：田东斌张怀武赖伟恩文歧业宋远强王治国 State Key Laboratory of Electronic Thin Films and Integrated Devices School of Microelectronic and Solid-state Electronic University of Electronic Science and Technology of China Chengdu 610054 Department of Applied Physics University of Electronic Science and Technology of China Chengdu 610054

A double-wire-grid polarizer was fabricated on both sides of a low-loss polythene film by simple electroplating and photolithographic micro-processing techniques. The performances of the polarizer were measured using a terahertz time-domain spectrometer （THz-TDS）. The transmittance is more than 70% and below 2% in the parallel and perpendicular directions of the polarizer, respectively. The extinction ratio is better than 22 dB in the broad frequency range of 0.5–3 THz, which is higher than the conventional free-standing polarizer in the high frequency region.

关键词： POLARIZERS (Light) MICROFABRICATION TERAHERTZ spectroscopy POLYETHYLENE ELECTROPLATING PHOTOLITHOGRAPHY

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Tuning the Threshold Voltage of Low Voltage Organic Thin Film Transistor using light illumination

Tuning the Threshold Voltage of Low Voltage Organic Thin Fil...

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2010 10th IEEE International Conference on Solid-State and Integrated Circuit technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Liwei Shang Ming Liu Zhuoyu Ji Yingpin Chen Hong Wang Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781424457977

High and random voltages are big challenges for practical applications of organic thin film transistors (OTFTs). Herein, a route to achieve devices with both low operating voltages (Vop) and tunable threshold voltages (Vm) was proposed. The Vop was reduced to be less 3 V without lowering the mobility and the ratio of on/off current using a 30 nm Al2O3 insulator film fabricated by atomic layer deposition technology. And the VTh was tuned from 1.7 V to 3.8 V by using light illumination combined with voltage pulse on gate electrodes. The tuning range is nearly twice of the operating voltage. And the tuning process is highly reversible. Uniform VTH of OTFTs can be obtained without changing process or materials.

关键词： threshold voltage illumination Organic thin-film transistors VOLTAGE tuning Voltage pulses operating voltage Low voltage Vanadium

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Influence of boundary force on the performance of gate-all-around Ge (110) NW FETs with HfO2 gate insulator

Influence of boundary force on the performance of gate-all-a...

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IEEE International Nanoelectronics Conference (INEC)

作者： Honghua Xu Xiaoyan Liu Gang Du Yuhui He Chun Fan Ruqi Han Jinfeng Kang Institute of Microelectronics Key Laboratory of Microelectronic Devices and Circuits Ministry of Education Peking University Beijing China Institute of Microelectronics Peking University Beijing China Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy and Sciences Beijing China Computer Center Peking University Beijing China

ISBN: (纸本)9781424435432;9781424435449

We calculate valence band structures and transport property of HfO 2 gate dielectric surrounded Ge (110) nanowire with a radial force at the boundary of the insulator. The radial force pushes the valence subbands downwards. Most of hole effective masses of top five subbands decrease and densities of states' peaks move down as the force increases. The hole mobility in Ge (110) NW significantly increases with higher force values.

关键词： FETs Hafnium oxide Dielectrics and electrical insulation Capacitive sensors Effective mass Nanoscale devices Electrodes Lattices Voltage High-K gate dielectrics

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InP/InGaAs heterojunction bipolar transistors with different μ-bridge structures

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Journal of Semiconductors 2009年第11期30卷 31-33页

作者：于进勇刘新宇夏洋 Microelectronic Devices and Integration Technology Key Laboratory of Chinese Academy of Sciences Institute of MicroelectronicsChinese Academy of Sciences

Several μ-bridge structures for InP-based heterojunction bipolar transistors （HBTs） are reported. The radio frequency measurement results of these InP HBTs are compared with each other. The comparison shows that μ-bridge structures reduce the parasites and double p-bridge structures have a better effect. Due to the utilization of the double/^-bridges, both the cutoff frequency fτ and also the maximum oscillation frequency fτ of the 2 × 12.5 μm2 InP/InGaAs HBT reach nearly 160 GHz. The results also show that the μ-bridge has a better effect in increasing the high frequency performance of a narrow emitter InP HBT.

关键词： InP HBT μ-bridge

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A low-noise interface circuit for MEMS vibratory gyroscope

A low-noise interface circuit for MEMS vibratory gyroscope

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2010 10th IEEE International Conference on Solid-State and Integrated Circuit technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Ran Fang Guannan Wang Dunshan Yu Yuan Ju Wengao Lu Lijiu Ji Zhongjian Chen Chang Liu Key Laboratory of Microelectronic Devices and Circuit Department of Microelectronics Peking Univer School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA 30332

ISBN: (纸本)9781424457977

关键词： Gyroscopes Micromechanical devices Noise Capacitance Oscillators Application specific integrated circuits Low pass filters

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