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Organic-inorganic hybrid circuit with organic memory and MOSFET

Organic-inorganic hybrid circuit with organic memory and MOS...

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IEEE International Nanoelectronics Conference (INEC)

作者： Xing H. Liu Zhuo Y. Ji De Y. Tu Li W. Shang Ming Liu Chang Q. Xie Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy and Sciences Beijing China Institute of Microelectronics Chinese Academy and Sciences Chaoyang China

ISBN: (纸本)9781424435432;9781424435449

In this paper, the organic-inorganic hybrid circuit is demonstrated with the sandwiched structure of Au/poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate/Au organic memory device and N-type MOSFET for nonvolatile memory application. The MOSFET is fabricated with 0.13-¿m CMOS technology. One transistor and one resistor (1T-1R) structure is fabricated in this hybrid circuit, in which the transistor is used as a select cell to limit the compliance current. The compliance current is determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the low resistive state. The resistive ratio between the ON- and OFF-state is on the order of 10 3 .

关键词： MOSFET circuits Gold Electrodes Organic light emitting diodes Voltage Nonvolatile memory Resistors OFETs Photovoltaic cells Polymer films

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Sub-micrometer organic field effect transistors

Sub-micrometer organic field effect transistors

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ISTC/CSTIC 2009 (CISTC)

作者： Shang, L. Liu, M. Ji, Z. Liu, G. Liu, X. Liu, J. Wang, H. Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781615676460

Pentacene organic field effect transistors with a series of submicrometer channel have been fabricated and characterized. Source and drain metal electrodes was made by electron-beam lithography and lift-off process. Image reversal photo resist was used to make integrated mask to pattern the organic semiconductor film to reduce the off-state current. And thiol treatment was applied on gold electrodes to modify their surface energy and improve the charge carrier injection. All the devices can behavior as typical p-type transistor, and have obvious saturation. Using electrode and dielectric surface treatment, device performances have significant improvement. All of the performances, including mobility, threshold voltage and on/off current ratio will change with the channel length decreasing because of the low quality interface between the OSC and dielectrics. ©The Electrochemical Society.

关键词： Organic field effect transistors

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A novel negative bias temperature instability model for nanoscale finfet

A novel negative bias temperature instability model for nano...

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2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

作者： Ma, Chenyue Li, Bo He, Frank Zhang, Xing Lin, Xinnan Research Center of Micro- and Nano- Device and Technology Key Laboratory of Integrated Microsystems Peking University Shenzhen Graduate School Shenzhen 518055 China Key Laboratory of Microelectronic Devices and Circuits of Chinese Ministry of Education Peking University TSRC Beijing 100871 China

ISBN: (纸本)9781424439102

This paper presents both static and dynamic NBTI Negative Bias Temperature Instability model based on the novel Reaction-Trapping theory. The accuracy of the proposed is greatly improved comparing to the classical Reaction-Diffusion theory, and the results agree well with the experiments over a wide range of temperature. Finally, the NBTI model of FinFETs is demonstrated through SRAM simulation. ©2009 IEEE.

关键词： Negative bias temperature instability

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A physical based Hot Carrier Injection compact model for nanoscale FinFET

A physical based Hot Carrier Injection compact model for nan...

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作者： Ma, Chenyue Li, Bo Zhang, Lining He, Jin Zhang, Xing Lin, Xinnan Micro- and Nano Electronic Device and Integrated Technology Group Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Shenzhen China Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education EECS Peking University Beijing China

ISBN: (纸本)9781439817841

A detail analysis for nanoscale FinFET performance degradation induced by the Hot Carrier Injection (HCl) is given in this paper, and a physical based HCl compact model adapted to all the operation modes is presented. It is concluded that in the depletion and weak reverse region, the degradation of carrier mobility is the dominant impact on the current decrease;in the strong inversion region, the current decrease is determined by the loss of inversion charges trapped in the interface states. With the analysis, a compact HCl model for Nanoscale FinFET is derived and validated in both forward and reverse operation mode. The simulation result agrees very well with the measured data.

关键词： FinFET

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An analytic model of the silicon-based nanowire Schottky Barrier MOSFET

An analytic model of the silicon-based nanowire Schottky Bar...

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作者： Zhou, Xingye Che, Yuchi Zhang, Lining He, Jin Chan, Mansun Key Laboratory of Integrated Microsystems Micro and Nano Electronic Device and Integrated Technology Center Shenzhen Graduate School of Peking University Shenzhen 518055 China Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education School of Electronics Engineering and Computer Science Peking University 100871 China Department of Electronic and Computer Engineering Hong Kong University of Science and Technology Clearwater Bay Kowloon Hong Kong

ISBN: (纸本)9781439817841

In this paper, an analytic model of the Silicon-based Nanowire Schottky-Barrier MOSFETs is developed based on the 2D solution of body potential together with the WKB tunneling theory. The proposed model predicts the electrical characteristics of the silicon-based nanowire Schottky barrier MOSFETs with different geometry and structure parameters and extensive comparisons with the 2-D numerical simulation show that the presented model is valid for all operation regions of such a device with a variety of geometry parameters and different work function configurations of the metal source (drain). Such a compact model may be useful for us to benchmark nanowire Schottky barrier MOSFET circuit performance and device structure optimization.

关键词： Nanowires

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A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability

A unified FinFET reliability model including high K gate sta...

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IEEE International Symposium on Quality Electronic Design

作者： Chenyue Ma Bo Li Lining Zhang Jin He Xing Zhang Xinnan Lin Mansun Chan TSRC Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education Institute of Microelectronics EECS Peking University Shenzhen China The Micro-& Nano Electronic Device and Integrated Technology Group The Key Laboratory of Integrated Microsystems Peking University Shenzhen China TSRC Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education Institute of Microelectronics EECS Peking University Beijing China Peking University Beijing Beijing CN Department of ECE Hong Kong University of Science and Technology Hong Kong China

A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.

关键词： FinFETs High K dielectric materials High-K gate dielectrics Threshold voltage Hot carrier injection Negative bias temperature instability Circuit simulation Human computer interaction Niobium compounds Titanium compounds

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A Web-Based Platform for Nanoscale Non-classical Device Modeling and Circuit Performance Simulation

A Web-Based Platform for Nanoscale Non-classical Device Mode...

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International Conference on Web Information Systems and Mining (WISM)

作者： Hao Zhuang Frank He Xinnan Lin Lining Zhang Jian Zhang Xiufang Zhang Mansun Chan Research Center of Micro-& Nano-Device and Technology The Key Laboratory of Integrated Microsystems Shenzhen Graduate School Peking University Shenzhen China TSRC Key Laboratory of Microelectronic Devices and Circuits of Chinese Ministry of Education Peking University Beijing China Department of Electronic & Computer Engineering Hong Kong University of Science and Technology Hong Kong China

This paper describes a web-based platform for nanoscale non-classical device modeling and circuit simulation, especially for non-classical CMOS device compact modeling and circuit performance prediction. This platform is based on program libraries, including model code files. We use SPICE as circuit simulation framework, and the Verilog-A as model design language. Based on the user input deck content, running embedding device and circuit programs, the platform produces several types of device characteristics output such as data texts and graphs on the web page for analysis, according to the simulation results and users' requests. Some nanoscale device modeling examples and the circuit simulation cases are demonstrated by the means of the platform configures and function application. It is shown that not only does this kind of platform address problems arising from the dependence on computer operating system of modeling and simulation software, the complexity of software and program update, but also helps researchers focus on their research on device physics and circuit design, display their research results and share latest research achievements or new technology online, which will accelerate the development of device modeling and circuit design technology in turn.

关键词： Nanoscale devices Circuit optimization Circuit simulation Semiconductor device modeling Predictive models Computational modeling Circuit synthesis Libraries SPICE Hardware design languages

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A novel Negative Bias Temperature Instability model for nanoscale Finfet

A novel Negative Bias Temperature Instability model for nano...

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Chenyue Ma Bo Li Frank He Xing Zhang Xinnan Lin Research Center of Micro-& Nano-Device and Technology The Key Laboratory of Integrated MicrosystemsShenzhen Graduate School Peking University Beijing China Research Center of Micro-& Nano-Device and Technology The Key Laboratory of Integrated MicrosystemsShenzhen Graduate School Peking University Shenzhen China Peking University Beijing Beijing CN TSRC Key Laboratory of Microelectronic Devices and Circuits of Chinese Ministry of Education Peking University Beijing China

关键词： Negative bias temperature instability FinFETs Stress Niobium compounds Titanium compounds Charge pumps High K dielectric materials Silicon Voltage Dielectric devices

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Organic field effect transistors having hundreds of nanometers long channels

Organic field effect transistors having hundreds of nanomete...

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2008 MRS Spring Meeting

作者： Liwei, Shang Ming, Liu Deyu, Tu Lijuan, Zhen Ge, Liu Xinghua, Liu Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences No.3 West road of Beitucheng Chaoyang Disctrict Beijing 100029 China

ISBN: (纸本)9781605608440

This work studied systemically the device characteristics when the OFETs' channels turn into hundreds of nm. Standard planar OFETs have been fabricated using electronic beam lithography. Copper phthalocyanine is used as the semiconductor materials. When reduce the L to about 300 nm will lead an abrupt degradation of device performance. The ratio of Ion/Ioff turns from several hundreds into couple of tens. And when change the L to about 100 nm, the mobility turns from 10-2 cm2/Vs into 10 -5 cm2/Vs, and the threshold voltage turns from about 12 V into 36 V. These abrupt changes are due to the changes of interface between active layer and insulator layer caused by the reducing the L to close to the grain size. © 2008 Materials Research Society.

关键词： Organic field effect transistors

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FinFET reliability study by forward gated-diode method

FinFET reliability study by forward gated-diode method

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2008 9th International Conference on Solid-State and Integrated-Circuit technology, ICSICT 2008

作者： Chenyue, Ma. Li, Bo Wei, Yiqun Zhang, Lining He, Jin Zhang, Xing Lin, Xinnan Key Laboratory of Microelectronic Devices and Circuits School of Electronics and Computer Science Peking University 100871 China Micro- and Nano Electric Device and Integrated Technology Group Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Shenzhen 518055 China

ISBN: (纸本)9781424421855

Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination (G-R) current. It is observed that the stress induced interface states result in the shift of the peak G-R current (ΔIpeak) in the body current Ib versus gate voltage (Vg) characteristic, therefore the variation of interface states with stress time was calculated. In the Hot Carrier Injection (HCI) stress condition, the evident difference of the output current degradation was achieved by interchanging the source and drain of FinFET. This phenomenon indicated the asymmetric distribution of the interface states along the channel, and the deduction was demonstrated by extracting the distribution of the interface states subsequently. Moreover, the generation of the interface states induce by HCI was estimated from the output characteristic. © 2008 IEEE.

关键词： Reliability

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