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International Conference on Web Information Systems and Mining (WISM)

作者： Hao Zhuang Frank He Xinnan Lin Lining Zhang Jian Zhang Xiufang Zhang Mansun Chan Research Center of Micro-& Nano-Device and Technology The Key Laboratory of Integrated Microsystems Shenzhen Graduate School Peking University Shenzhen China TSRC Key Laboratory of Microelectronic Devices and Circuits of Chinese Ministry of Education Peking University Beijing China Department of Electronic & Computer Engineering Hong Kong University of Science and Technology Hong Kong China

This paper describes a web-based platform for nanoscale non-classical device modeling and circuit simulation, especially for non-classical CMOS device compact modeling and circuit performance prediction. This platform is based on program libraries, including model code files. We use SPICE as circuit simulation framework, and the Verilog-A as model design language. Based on the user input deck content, running embedding device and circuit programs, the platform produces several types of device characteristics output such as data texts and graphs on the web page for analysis, according to the simulation results and users' requests. Some nanoscale device modeling examples and the circuit simulation cases are demonstrated by the means of the platform configures and function application. It is shown that not only does this kind of platform address problems arising from the dependence on computer operating system of modeling and simulation software, the complexity of software and program update, but also helps researchers focus on their research on device physics and circuit design, display their research results and share latest research achievements or new technology online, which will accelerate the development of device modeling and circuit design technology in turn.

关键词： Nanoscale devices Circuit optimization Circuit simulation Semiconductor device modeling Predictive models Computational modeling Circuit synthesis Libraries SPICE Hardware design languages

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A novel Negative Bias Temperature Instability model for nanoscale Finfet

A novel Negative Bias Temperature Instability model for nano...

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International Symposium on Physical & Failure Analysis of Integrated Circuits

作者： Chenyue Ma Bo Li Frank He Xing Zhang Xinnan Lin Research Center of Micro-& Nano-Device and Technology The Key Laboratory of Integrated MicrosystemsShenzhen Graduate School Peking University Beijing China Research Center of Micro-& Nano-Device and Technology The Key Laboratory of Integrated MicrosystemsShenzhen Graduate School Peking University Shenzhen China Peking University Beijing Beijing CN TSRC Key Laboratory of Microelectronic Devices and Circuits of Chinese Ministry of Education Peking University Beijing China

This paper presents both static and dynamic NBTI Negative Bias Temperature Instability model based on the novel Reaction-Trapping theory. The accuracy of the proposed is greatly improved comparing to the classical Reaction-Diffusion theory, and the results agree well with the experiments over a wide range of temperature. Finally, the NBTI model of FinFETs is demonstrated through SRAM simulation.

关键词： Negative bias temperature instability FinFETs Stress Niobium compounds Titanium compounds Charge pumps High K dielectric materials Silicon Voltage Dielectric devices

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Organic field effect transistors having hundreds of nanometers long channels

Organic field effect transistors having hundreds of nanomete...

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2008 MRS Spring Meeting

作者： Liwei, Shang Ming, Liu Deyu, Tu Lijuan, Zhen Ge, Liu Xinghua, Liu Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences No.3 West road of Beitucheng Chaoyang Disctrict Beijing 100029 China

ISBN: (纸本)9781605608440

This work studied systemically the device characteristics when the OFETs' channels turn into hundreds of nm. Standard planar OFETs have been fabricated using electronic beam lithography. Copper phthalocyanine is used as the semiconductor materials. When reduce the L to about 300 nm will lead an abrupt degradation of device performance. The ratio of Ion/Ioff turns from several hundreds into couple of tens. And when change the L to about 100 nm, the mobility turns from 10-2 cm2/Vs into 10 -5 cm2/Vs, and the threshold voltage turns from about 12 V into 36 V. These abrupt changes are due to the changes of interface between active layer and insulator layer caused by the reducing the L to close to the grain size. © 2008 Materials Research Society.

关键词： Organic field effect transistors

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FinFET reliability study by forward gated-diode method

FinFET reliability study by forward gated-diode method

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2008 9th International Conference on Solid-State and Integrated-Circuit technology, ICSICT 2008

作者： Chenyue, Ma. Li, Bo Wei, Yiqun Zhang, Lining He, Jin Zhang, Xing Lin, Xinnan Key Laboratory of Microelectronic Devices and Circuits School of Electronics and Computer Science Peking University 100871 China Micro- and Nano Electric Device and Integrated Technology Group Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Shenzhen 518055 China

ISBN: (纸本)9781424421855

Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination (G-R) current. It is observed that the stress induced interface states result in the shift of the peak G-R current (ΔIpeak) in the body current Ib versus gate voltage (Vg) characteristic, therefore the variation of interface states with stress time was calculated. In the Hot Carrier Injection (HCI) stress condition, the evident difference of the output current degradation was achieved by interchanging the source and drain of FinFET. This phenomenon indicated the asymmetric distribution of the interface states along the channel, and the deduction was demonstrated by extracting the distribution of the interface states subsequently. Moreover, the generation of the interface states induce by HCI was estimated from the output characteristic. © 2008 IEEE.

关键词： Reliability

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A numerical method to simulate THz-wave generation and detection of field-effect transistors

A numerical method to simulate THz-wave generation and detec...

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2008 9th International Conference on Solid-State and Integrated-Circuit technology, ICSICT 2008

作者： Mou, Xuehao Chen, Yu Chenyue, Ma. Che, Yuchi He, Jin TSRC Key Laboratory of Microelectronic Devices and Circuits School of Electronics and Computer Science Peking University 100871 China Micro and Nano Electric Device and Integarted Technology Group Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Shenzhen 518055 China

ISBN: (纸本)9781424421855

A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this paper. It is derived directly from the hydrodynamic equations and implemented in Matlab coding. Simulation results are compared with the existing theories, proving the validity of the developed numerical method and providing useful data that the THz detection theory cannot yield. © 2008 IEEE.

关键词： Numerical methods

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Organic Field Effect Transistors Having Hundreds of Nanometers Long Channels

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MRS Online Proceedings Library 2008年第1期1091卷 1-6页

作者： Liwei Shang Ming Liu Deyu Tu Lijuan Zhen Ge Liu Xinghua Liu Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing People’s Republic of China

This work studied systemically the device characteristics when the OFETs’ channels turn into hundreds of nm. Standard planar OFETs have been fabricated using electronic beam lithography. Copper phthalocyanine is used as the semiconductor materials. When reduce the L to about 300 nm will lead an abrupt degradation of device performance. The ratio of Ion/Ioff turns from several hundreds into couple of tens. And when change the L to about 100 nm, the mobility turns from 10−2 cm2/Vs into 10m5 cm2/Vs, and the threshold voltage turns from about 12 V into 36 V. These abrupt changes are due to the changes of interface between active layer and insulator layer caused by the reducing the L to close to the grain size.

关键词： nanoscale organic thin film

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FinFET Reliability Study by Forward Gated-Diode Method

FinFET Reliability Study by Forward Gated-Diode Method

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2008 9th International Conference on Solid-State and Integrated-Circuit technology

作者： Chenyue Ma Bo Li Yiqun Wei Lining Zhang Jin He Xing Zhang Xinnan Lin TSRC Key Laboratory of Microelectronic Devices and CircuitsInstitute of MicroelctronicsSchool of Electronics and Computer SciencePeking University Micro- & Nano Electric Device and Integrated Technology Group The Key Laboratory of Integrated MicrosystemsShenzhen Graduate School of Peking University

Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination(G-R) *** is observed that the stress induced interface states result in the shift of the peak G-R current(ΔI) in the body current(I) versus gate voltage(V) characteristic,therefore the variation of interface states with stress time was *** the Hot Carrier Injection(HO) stress condition,the evident difference of the output current degradation was achieved by interchanging the source and drain of *** phenomenon indicated the asymmetric distribution of the interface states along the channel,and the deduction was demonstrated by extracting the distribution of the interface states ***,the generation of the interface states induce by HCI was estimated from the output characteristic.

关键词： FinFET G-R current stress interface state distribution reliability issue

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A Numerical Method to Simulate THz-Wave Generation and Detection of Field-effect Transistors

A Numerical Method to Simulate THz-Wave Generation and Detec...

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2008 9th International Conference on Solid-State and Integrated-Circuit technology

作者： Xuehao Mou Yu Chen Chenyue Ma Yuchi Che Jin He TSRC Key Laboratory of Microelectronic Devices and CircuitsInstitute of MicroelctronicsSchool of Electronics and Computer SciencePeking University Micro & Nano Electric Device and Integarted Technology Group the Key Laboratory of Integrated MicrosystemsShenzhen Graduate School of Peking University

＜正＞A numerical method can be widely used to simulate FET-based THz wave generation and detection is developed in this *** is derived directly from the hydrodynamic equations and implemented in Matlab *** results are compared with the existing theories,proving the validity of the developed numerical method and providing useful data that the THz detection theory cannot yield.

关键词： THz-wave FET Hydrodynamic Equations Numerical Simulation

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A numerical method to simulate THz-wave generation and detection of field-effect transistors

A numerical method to simulate THz-wave generation and detec...

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International Conference on Solid-State and Integrated Circuit technology

作者： Xuehao Mou Yu Chen Chenyue Ma Yuchi Che Jin He Micro &Nano Electric Device and Integarted Technology Group the Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University Shenzhen China ITSRC Key Laboratory of Microelectronic Devices and Circuits Institute of Microelctronics School of Electronics and Computer Science Peking University China

关键词： Numerical simulation FETs Equations Hydrodynamics Frequency Computational modeling Computer simulation Laboratories Space technology Electrons

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STP technology for sealing three-dimensional MEMS structures

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NTT Technical Review 2007年第10期5卷

作者： Sato, Norio Ono, Kazuyoshi Morimura, Hiroki Shigematsu, Satoshi Ishii, Hiromu Machida, Katsuyuki NTT Microsystem Integration Laboratories Atsugi-shi 243-0 98 Japan Smart Devices Laboratory NTT Microsystem Integration Laboratories Ubiquitous Interface Laboratory NTT Microsystem Integration Laboratories Nano-Electronics Business Unit Leading-Edge Key Technology Business Headquarters NTT Advanced Technology Corporation

A film-formation technology called spin-coating film transfer and hot pressing (STP) has been developed to seal three-dimensional microelectromechanical systems (MEMS) structures that include cavities and thereby protect movable parts from contamination in practical environments, The critical process in STP is film transfer. This is accomplished in a special apparatus designed for that purpose and through a process for controlling the film shape. STP was applied to the fabrication of MEMS fingerprint sensors, and the results show that sealing the cavities in the sensors enables stable fingerprint sensing.

关键词： MEMS

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