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China Semiconductor technology International Conference (CSTIC)

作者： Zian Ba Guofeng Pan Ziyi Cao Yingqi Di School of Electronics and Information Engineering Hebei University of Technology Tianjin Key Laboratory of Electronic Materials and Devices Tianjin P.R. China Hebei Collaborative Innovation Center of Microelectronic Materials and Technology on Ultra Precision Processing Hebei Engineering Research Center of Microelectronic Materials and Devices(ERC) Tianjin China

ISBN: (数字)9798331513351

ISBN: (纸本)9798331513368

Quartz crystal components are widely used in mobile communications and optical communications. With the rapid development of intelligent electronic products and mobile terminals, there is a pressing demand for compact quartz crystal devices that are reliable in performance and offer higher, more stable output frequencies. The surface quality of quartz crystals directly affects their frequency stability and temperature-frequency characteristics, and other physical properties. Despite ultra-precision polishing, the surface and subsurface of the quartz wafer continue to exhibit a damage layer. Chemical mechanical polishing (CMP) can precisely control the surface quality (Sq) of quartz wafers. Surfactants, as a crucial component of the polishing slurry, effectively enhance the surface smoothness and uniformity of quartz wafers. This study investigates the impact of different concentrations of isooctanol polyoxyethylene ether(JFC-E) as a surfactant on the surface quality of quartz wafers after CMP. Experimental results indicate that at a pH of 10.0, a cerium oxide (CeO2) concentration of 2 wt%,a hydrogen peroxide (H2O2) concentration of 1.2 wt%, and a JFC-E concentration of 90 ppm, the sample achieved the finest surface quality, with Sq of only 0.0862 nm. This result represents a significant improvement when compared to the initial surface quality of the simple, which was characterized by Sq of 2.3690 nm.

关键词： Performance evaluation Planarization Hydrogen Semiconductor device reliability Pressing Cerium Quartz crystals Surfactants Thermal stability Slurries

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Higher order BIC of metasurface excited by magnetic EIT

Higher order BIC of metasurface excited by magnetic EIT

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2024 International Applied Computational Electromagnetics Society Symposium, ACES-China 2024

作者： Ren, Qun Wang, Fangmiao Dang, Yongjing Wang, Xiaoman You, Jianwei Wang, Xiuyu Sha, Wei E. I. Tianjin University School of Electrical and Information Engineering Tianjin300072 China Purple Mountain Laboratories Nanjing211100 China Southeast University State Key Laboratory of Millimeter Waves School of Information Science and Engineering Nanjing210096 China Tianjin University Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of Microelectronics Tianjin300072 China Zhejiang University Key Laboratory of Micro-Nano Electronic Devices and Smart Systems of Zhejiang Province College of Information Science and Electronic Engineering Hangzhou310027 China

ISBN: (纸本)9798350355581

Metasurfaces enable complex modulation of terahertz waves. However, the quality factor of metallic metasurfaces is often limited by intrinsic ohmic losses. The concept of bound states in the continuum (BIC) has been proposed to enhance terahertz-matter interactions. High order BICs have garnered attention due to their robustness. Previous studies on high-order BICs focused on photonic crystals, requiring high structural symmetry. In this paper, we propose a metasurface design based on the magnetic Electromagnetic induced transparency (EIT) effect to excite higher-order BIC eigenmodes. This novel approach and the resulting robust modes hold great potential for terahertz sensing and communication applications. © 2024 IEEE.

关键词： Terahertz waves

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Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing

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Science China(Information Sciences) 2023年第12期66卷 261-266页

作者： Yang FENG Bing CHEN Mingfeng TANG Yueran QI Maoying BAI Chengcheng WANG Hai WANG Xuepeng ZHAN Junyu ZHANG Jing LIU Jixuan WU Jiezhi CHEN School of Information Science and Engineering Shandong University School of Micro-nano Electronics Zhejiang University Neumem Co. Ltd Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences

We propose a NOR flash-based computing-in-memory(CIM) to implement high-precision(32-bit) Poisson image editing, including the gradient operations and Laplace operation. To meet the requirements of image processing, CIM operation schemes and reliabilities are carefully studied and optimized,showing that the power consumption at the near-threshold-voltage(NTV) region can be as low as 40 fJ/bit,which is two orders lower than working at the saturation region. High-temperature retention, as well as various disturbs, are also analyzed. The proposed CIM scheme can be applied as an energy-efficient approach to construct the high-precision image processing accelerator.

关键词： NOR flash memory computing-in-memory variation Poisson image editing

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A 20-Gb/s Low Power Inductorless TIA Design in 0.18µm CMOS

A 20-Gb/s Low Power Inductorless TIA Design in 0.18µm CMOS

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International Conference on Electronic Engineering and Informatics (EEI)

作者： Zhiwei Zeng Weilin Xu Peisi Mo Haiou Li Education Department of Guangxi Zhuang Autonomous Region Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Guilin China Guangxi Key Laboratory of Precision Navigation Technology and Applications Guilin University of Electronic Technology Guilin China

ISBN: (数字)9798350353594

ISBN: (纸本)9798350353600

The performance demands on transimpedance amplifiers (TIA) for optoelectronic conversion have increased with the rapid development of fiber optic communication technology. A modified feedforward common gate (MFCG) transimpedance amplifier with an inductor less topology is suggested for analogue front-end wireless fiber optic communications applications. This leads to a significant improvement in the circuit power consumption and band-width. An improved auxiliary amplifier without Miller effect is used instead of the traditional FCG common source amplifier to improve the bandwidth and reduce the phase jitter. An improved parallel active inductor is used instead of the traditional active inductor to obtain a more favorable bandwidth compensation effect. Small-signal analysis demonstrated that the M-FCG has a low input impedance, a large output impedance and transconductance con-version ratio. Based on a 0.18-µm CMOS process post-simulation results, the M-FCG circuit exhibits a transimpedance gain of 58.87 dBΩ, a bandwidth of 6.33 GHz, an equivalent input current noise of 27.02 pA/-VHz, a power consumption of 1.9 mW in the core circuit, and occupies a layout area of 0.0054 mm2. Additionally, the eye diagrams were generated using PRBS at a rate of 20 Gb/s. The resulting eye diagram displays openness and clarity, thereby meeting the requirement for 20 Gb/s code element transmission.

关键词： Optical fiber amplifiers Wireless communication Power demand Active inductors Codes Noise Bandwidth Logic gates Impedance Transconductance

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Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors

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Science China(Information Sciences) 2020年第10期63卷 288-290页

作者： Xiaoqiao DONG Ming LI Wanrong ZHANG Yuancheng YANG Gong CHEN Shuang SUN Jianing WANG Xiaoyan XU Xia AN Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Faculty of Information Technology Beijing University of Technology

Dear editor,With the development of VLSI technology,gateall-around (GAA) silicon nano wire transistor(SNWT) has emerged as one of the most potential candidates for ultimately scaled CMOS devices at the end of the technology *** pioneering research studies have demonstrated super scalability and high performance with GAA SNWT [1-3].Whereas,in the practical fabrica-

关键词： gate-all-around nanowire effective gate length effective model asymmetrical

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A CMOS Time-of-Flight Image Sensor with High Dynamic Range Digital Pixel 14

A CMOS Time-of-Flight Image Sensor with High Dynamic Range D...

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14th IEEE International Conference on ASIC, ASICON 2021

作者： Yu, Shanzhe Zhang, Yacong Zhou, Fei Lu, Wengao Lei, Shuyu Chen, Zhongjian Peking University Key Laboratory of Microelectronic Devices and Circuits Department of Microelectronics China ABAX Sensing Electronic Technology Ningbo China

ISBN: (纸本)9781665411493

To widen measuring range and suppress background light, a CMOS time-of-flight image sensor with high dynamic range digital pixel is proposed. The sensing charge is quantized by extended-counting analogue-to-digital converter (ADC) which consists of pixel coarse quantization and column fine quantization. To maximize dynamic range in limited pixel area, the coarse quantization circuit is shared by 2×2 pixels, in which a novel up/down counter with a small number of transistors is proposed. Based on the pixel circuit, a 32×32 prototype TOF imager with 12μm-pitch digital pixel is designed in 0.11μm 1P4M CMOS image sensor technology. Simulation results show that a 104.6dB dynamic range of this ADC for wide measuring range is achieved at a frame rate of 50Hz. © 2021 IEEE.

关键词： Image sensors

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Impact of Time Delay Schemes on Reliability Degradation during Program/Erase Cycling in HZO-based FeFETs

Impact of Time Delay Schemes on Reliability Degradation duri...

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IEEE Silicon Nanoelectronics Workshop (SNW)

作者： Xiaopeng Li Guoqing Zhao Lu Tai Pengpeng Sang Xiaoyu Dou Xuepeng Zhan Xiaolei Wang Jixuan Wu Jiezhi Chen School of Information Science and Engineering (ISE) Shandong University Qingdao China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

ISBN: (数字)9798350391633

ISBN: (纸本)9798350391640

The commercialization of HZO-based FeFETs is hindered by issues such as MW degradation and poor endurance. In this study, we systematically investigate degradation suppression using time delay schemes. Our findings reveal that symmetric time delay during cycling fails to effectively mitigate MW and SS degradation. Interestingly, we observe that the optimization of MW or SS can be achieved through asymmetric delay (i.e., time delay only after program or erase). It’s found that delay after programming (P-delay) effectively suppresses MW degradation, while delay after erasure (E-delay) proves effective in mitigating SS degradation. This study offers valuable insights into the reliability optimization of HZO-based FeFETs.

关键词： Degradation Delay effects Conferences Programming Silicon Delays Reliability

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Highly thermal conductivity flexible composite films based on alumina-boron nitride binary fillers

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Ceramics International 2025年

作者： Hu, Xin Sha, Xiaolu Zhao, Xinyu Li, Xin Gao, Wei Zhang, Kexiong Gao, Jinling Long, Ze Yu, Jinqiang Liang, Hongwei Yin, Hong State Key Laboratory of High Pressure and Superhard Materials College of Physics Jilin University Changchun130012 China School of Integrated Circuits Dalian University of Technology Dalian116024 China Dalian Key Laboratory of Wide Bandgap Semiconductor Devices Integration and System Dalian116024 China

Thermal interface materials (TIMs) exhibiting dual attributes of high thermal conductivity and excellent electrical insulation are urgently in demand for heat management of microelectronic devices. However, ultrahigh filler loadings that are often required for achieving high thermal conductivity would compromise the other properties such as softness and flowability of the composites. In this work, we present a straightforward and effective approach for highly thermally conductive polymer composites based on binary fillers of alumina (Al2O3) and boron nitride (BN) through a conventional hot-press method that is potential for the scalable production. Al2O3 and BN with different particle sizes and shapes are functionalized as binary fillers. By utilizing various gradation scheme based on Dinger-Funk particle stacking theory, the spherical Al2O3 composites achieve a thermal conductivity of 5.12 W m−1 K−1 with a maximum packing density. Further mixing with BN leads to flexible thin films with a remarkable thermal conductivity of 9.23 W m−1 K−1, which is ∼50 times that of pure silicon rubbers (0.18 W m−1 K−1). Meanwhile, the synthesized composites demonstrate electrically insulation, flexibility, compressibility, as well as remarkable stability even after cycled temperature shocks from room temperature to 120 °C, which are conducive to environmental adaptability for industrial applications. The results of this work offer a feasible strategy of synthesizing BN-based TIMs and pave the way for their large-scale practical implementation for effective thermal management. © 2025

关键词： Boron nitride

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Design of a Three-Dimensional Inlet Structure for Preventing Cell Deposition of Microfluidic Flow Cytometry

Design of a Three-Dimensional Inlet Structure for Preventing...

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International Symposium on Next-Generation Electronics (ISNE)

作者： Yu Hu Ya Li Xu Wang Ziqiang Du Wenchang Zhang Xiaonan Yang School of Electrical and Information Engineering Zhengzhou University Zhengzhou China Department of Gastroenterology The First Affiliated Hospital of Zhengzhou University Zhengzhou China Key Laboratory of microelectronic devices and integration technology Institute of Microelectronics of the Chinese Academy Beijing China

Microfluidic flow cytometry has the advantage of simple structure and easy sample handling, with a promising application for point-of-care testing. Long time imaging at low flow rates leads to inlet cell deposition and inaccurate counting. In this paper, we propose a three-dimensional inlet structure that can effectively reduce cell deposition and achieve a smaller dead zone area. First, the geometric design of the structure is presented and the flow path and dead zone distribution of the structure are analysed. Then, the design method and preparation process of the structure are described. In order to test the optimised performance of the structure, analytical experiments were carried out and cell counts were analysed and counted using image detection methods. The results show that the junction structure is able to assist in sample feeding and increase the cell throughput values by approximately 21%.

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Low palladium content CeO_(2)/ZnO composite for acetone sensor with sub-second response prepared by ultrasonic method

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Journal of Central South University 2024年第7期31卷 2137-2149页

作者： CHEN Xu-jie XING Qiao-ling TANG Xuan CAI Yong ZHANG Ming Hunan Provincial Key Laboratory of Low-dimensional Structural Physics&Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China School of Mechanical Engineering and Mechanics Xiangtan UniversityXiangtan 411105China Research Institute of Hunan University in Chongqing Chongqing 401120China Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education&Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education National Key Laboratory of Power Semiconductor and Integration TechnologyCollege of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China

In practical applications,noble metal doping is often used to prepare high performance gas sensors,but more noble metal doping will lead to higher preparation *** this study,CeO_(2)/ZnO-Pd with low palladium content was prepared by ultrasonic method with fast response and high selectivity for acetone *** the same amount of palladium added,the selectivity coefficient of CeO_(2)/ZnO-Pd is 1.88 times higher than that of the stirred *** with the pure PdO-doped CeO_(2)/ZnO-PdO material,the content of Pd in CeO_(2)/ZnO-PdO is about 30%of that in CeO_(2)/ZnO-PdO,but the selectivity coefficient for acetone is 2.56 times *** CeO_(2)/ZnO-Pd sensor has a higher response(22.54)to 50×10^(−6) acetone at 300℃and the selectivity coefficient is 2.57 times that of the CeO_(2)/ZnO *** sensor has a sub-second response time(0.6 s)and still has a 2.36 response to 330×10^(−9) of *** doping makes Pd particles smaller and increases the contact area with ***,the composition of n-p-n heterojunction and the synergistic effect of Pd/PdO improve the sensor *** shows that ultrasonic Pd doping provides a way to improve the utilization rate of doped metals and prepare highly selective gas sensors.

关键词： low palladium sub-second responce ultrasonic method acetone sensor heterojunction

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