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3D microfluidic bubble freeze printing and its application for fabricating porous piezoelectric hydrogel

Journal of Manufacturing Processes 2025年 145卷 536-544页

作者： Jin, Shaobo Liu, Zenghao Wang, Hao Ye, Guoyong Dai, Liguo Guo, Shun Guo, Yuqi Zhao, Tingting Henan Key Laboratory of Intelligent Manufacturing Mechanical Equipment Zhengzhou University of Light Industry Zhengzhou450002 China Department of Obstetrics and Gynecology People's Hospital of Zhengzhou University Henan Provincial People's Hospital Zhengzhou Henan450003 China Key Laboratory of Advanced Display and System Application Shanghai University Shanghai200072 China

Three-dimensional (3D) porous materials have been widely used in flexible electronic sensing, biological scaffolds, and other applications. There are still challenges in fabricating porous hydrogel with micro-nano porous structures. Herein, we demonstrate a 3D microfluidic bubble freeze printing method for fabricating porous piezoelectric hydrogel. By integrating three-dimensional microfluidic technology into the 3D printing nozzle, a 3D microfluidic freeze printing (3MFP) platform with an integrated 3D microfluidic chip was innovatively developed. Microbubbles generated in the 3D microfluidic chip can be controlled by adjusting the flow rate parameter. The as-prepared PVA/PVDF foam of microbubbles was used as a template for printing the PVA/PVDF-based porous piezoelectric hydrogel with micro-nano porous structures. The 3MFP platform allows for fabricating PVA/PVDF-based porous piezoelectric hydrogels with varying porosity and shapes. This method enables the flexible and controllable printing of porous hydrogel in one-dimensional to three-dimensional patterns. The PVA/PVDF-based porous piezoelectric hydrogel exhibits excellent piezoelectric sensing properties and good controllability, indicating significant potential for use in flexible wearables and intelligent sensing applications. © 2025 The Society of Manufacturing Engineers

关键词： Microfluidic chips

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Efficient Red Sn-Based Perovskite Light Emitting Diodes by a Competitive Antioxidation Strategy

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年第6期46卷 948-951页

作者： Gong, Yingqun Shi, Yuxin Huo, Sitao Wang, Lin Zhang, Xiaofei Kong, Lingmei Wang, Sheng Yang, Yingguo Yang, Xuyong Shanghai University Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai200072 China Seoul National University Department of Materials Science and Engineering Seoul08826 Korea Republic of Shanghai Tianma Micro-Electronics Company Ltd. Shanghai110044 China Zhangjiang Laboratory Shanghai200031 China Fudan University School of Microelectronics Shanghai200433 China

Tin (Sn)-based perovskite light-emitting diodes (PeLEDs) have emerged as a promising candidate for next-generation displays because of their eco-friendliness, exceptional optoelectronic properties, and cost-effective solution processability. However, their electroluminescence performance still lags behind their lead (Pb) counterparts, primarily due to the undesired Sn2+ oxidation to Sn4+ and the rapid crystallization of Sn-based perovskite, resulting in high defect density as well as poor film quality. Herein, we reported a competitive antioxidation strategy by utilizing a phosphorus ylide, namely (triphenylphosphoranilidene) acetaldehyde (TPPA), to suppress the oxidation of Sn2+ and regulate the growth kinetics, simultaneously. The TPPA with highly active polar phosphorus-carbon bonds can be oxidized prior to Sn2+, and their large steric hindrance can slow down the crystallization process of tin-based perovskite. Moreover, the main product from the oxidation reaction, namely triphenylphosphine oxide (TPPO), can further passivate defects by coordinating with SnI6 octahedra. The resulting Sn-based perovskite film exhibits enhanced optical properties and uniform, dense morphology. Leveraging these improvements, the optimized PeLED delivers pure-red light emission with Commission Internationale de L’Eclairage (CIE) color coordinates of (0.69, 0.30), an external quantum efficiency (EQE) of 8.1% and maximum luminance of 672 cd m−2. This work provides a facile route to enhance the overall performance of Sn-based PeLEDs. © 1980-2012 IEEE.

关键词： Perovskite

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Enhancing the response of electrowetting-based liquid lenses with an advanced overload voltage method

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Optics Letters 2025年第8期50卷 2739-2742页

作者： Ma, Xiangteng Zhao, Wenfeng Li, Xifeng Zhang, Janhua Key Laboratory of Advanced Display and System Applications Ministry of Education School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China Kunshan Xuanrou Optoelectronics Technology Co. Ltd. Suzhou215300 China

Liquid lenses based on electrowetting have a variety of applications in the fields of optics and imaging. A rapid and stable response to the applied driving voltage is crucial for the operation of such devices. This paper proposes an advanced voltage application with three-stage overload driving. This method effectively balances rapid response and stability of the liquid interface, while the conventional two-stage overload driving is associated with considerable oscillation of the liquid interface. Through simulation and experimentation of liquid lenses with different sizes, the three-stage method is identified as an efficient method to reduce the response time of the devices by optimizing the driving voltage and the duration time. © 2025 Optica Publishing Group.

关键词： Optical instrument lenses

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Multi-view fully connected graph to fuse multi-sensor signals for mechanical equipment remaining useful life prediction

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Journal of Manufacturing systems 2025年 80卷 1029-1052页

作者： Wu, Jinxin He, Deqiang Jin, Zhenzhen Zhao, Ming Li, Xianwang Chen, Yanjun Guangxi Key Laboratory of Manufacturing System & Advanced Manufacturing Technology School of Mechanical Engineering Guangxi University Nanning530004 China State Key Laboratory of Heavy-duty and Express High-power Electric Locomotive Zhuzhou412001 China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology 541004 China Guangxi Liugong Machinery Co. Ltd Liuzhou545007 China

Accurate remaining useful life prediction is essential for enhancing equipment reliability and optimizing maintenance strategies. However, existing methods struggle to effectively integrate multi-sensor data while quantifying uncertainty. To address these challenges, a multi-view fully connected graph neural network is proposed for multi-sensor mechanical equipment remaining useful life prediction. Firstly, local fully connected graphs and global graphs are constructed to comprehensively characterize the multi-view spatial correlations from global and local views. Meanwhile, the graph convolution operations are performed on local and global graphs to extract the intricate spatial dependencies within multi-sensor signals. Then, the learned multi-view spatial representations are fed into the temporal convolutional network to capture the temporal dependencies across sensor timestamps. Finally, a joint optimization network is developed to simultaneously predict the remaining useful life and its associated prediction interval, enabling uncertainty quantification. Extensive experiments on two multi-sensor monitoring degradation datasets demonstrate the superior performance of the proposed model, offering valuable technical support for predictive maintenance. © 2025 The Society of Manufacturing Engineers

关键词： Predictive maintenance

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Efficient and Stable Perovskite Light-Emitting Diodes Enabled by Oriented Growth Regulation

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年第6期46卷 952-955页

作者： Zhang, Kun Zhang, Xiaofei Zhang, Chengxi Feng, Jie Kong, Lingmei Wang, Sheng Yang, Yingguo Wang, Lin Yang, Xuyong Shanghai University Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai200072 China Jiangsu University of Science and Technology School of Science Zhenjiang212100 China Zhangjiang Lab Shanghai Advanced Research Institute Shanghai China Fudan University School of Microelectronics Shanghai China

Metal halide perovskites have demonstrated remarkable progress in optoelectronic applications, including solar cells and light-emitting diodes (LEDs). However, the long-term stability of perovskite LEDs (PeLEDs) remains a critical challenge, impeding their practical applications and commercialization. Herein, we regulate the growth kinetics of perovskites in liquid-solid stages by introducing 2,3,4,5, 6-pentafluorophenylphosphonic acid (PFBPA) into the precursor solution. The PFBPA molecules will create a protective passivation layer by coordinating with uncoordinated lead (Pb2+) on the perovskite surface, which regulates the growth of perovskite crystals during the liquid-solid stages and results in the formation of uniform perovskite films with reduced grain size. Moreover, the coordination of PFBPA with Pb2+ also improves the moisture resistance of perovskites, favoring the operational stability of devices. The resulting PeLED devices achieved a maximum brightness of 12426 cd m-2, a peak external quantum efficiency (EQE) of 22.6%, and a remarkable operational stability with a half-lifetime exceeding 1187 hours at initial luminance of 100 cd m-2. © 1980-2012 IEEE.

关键词： Perovskite

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Degradation state prediction of IGBT based on optimized variational mode decomposition and hybrid models

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Electrical Engineering 2025年 1-21页

作者： He, Deqiang Wang, Yanbo Wu, Jinxin Jin, Zhenzhen Zhao, Ming Chen, Yanjun State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite Structures Guangxi Key Laboratory of Manufacturing System & Advanced Manufacturing Technology School of Mechanical Engineering Guangxi University Nanning530004 China Guangxi Liugong Machinery Co. Ltd Liuzhou545007 China State Key Laboratory of Heavy-Duty and Express High-Power Electric Locomotive Zhuzhou412001 China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology Guilin541004 China

The insulated gate bipolar transistor (IGBT) is critical in motor drivers. Prolonged operation can lead to gradual degradation, adversely affecting motor operation and system performance. Therefore, accurate IGBT degradation state prediction (DSP) is essential for the timely maintenance and stable operation of motor drivers. The existing methods make it difficult to effectively deal with complex original degradation data, resulting in low DSP accuracy. To solve this issue, an improved method called ISSA-VMD-FDE based on optimized variational mode decomposition (VMD) and hybrid models is presented. Initially, the improved sparrow search algorithm (ISSA) is employed to optimize the VMD with minimum envelope entropy to obtain the key parameter combinations affecting VMD performance. Subsequently, the optimized VMD decomposes the IGBT degradation state data into multiple intrinsic mode functions (IMFs) and calculates each IMF’s fluctuation-based dispersion entropy (FDE). Based on the magnitude of FDE, the IMFs are categorized into high-frequency and low-frequency components. Finally, different models are applied to predict the high-frequency and low-frequency components separately, and the predictions are combined to yield the final DSP results. Experimental results demonstrate that the proposed prediction method exhibits strong predictive performance and reduces the MAPE by 89.41% compared to conventional methods, effectively supporting predictive maintenance and ensuring the reliable operation of IGBT. © The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature 2025.

关键词： Insulated gate bipolar transistors (IGBT)

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Advancements in graphene-based composites: A review of the emerging applications in healthcare

Smart Materials in Medicine

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Smart Materials in Medicine 2025年第1期6卷 120-138页

作者： Batool, Farwa Muhammad, Saz Muazzam, Rabia Waqas, Muhammad Ullah, Zia Roy, Shubham Zhang, Yinghe Wang, Ke Guo, Bing Department of Chemistry Lahore Garrison University DHA Phase VI Lahore Pakistan School of System Design and Intelligent Manufacturing Southern University of Science and Technology Shenzhen518055 China School of Science Shenzhen Key Laboratory of Flexible Printed Electronics Technology Shenzhen Key Laboratory of Advanced Functional Carbon Materials Research and Comprehensive Application Harbin Institute of Technology Shenzhen518055 China Government Queen Mary Graduate College Lahore Pakistan

Graphene and related materials are emerging revolutionary materials due to fascinating stimuli-responsive physiochemical properties having widespread applications in developing advanced nano-systems for detection, diagnostics, and therapeutics in biomedical fields. Various materials like metal nanoparticles, polymers, dyes, drugs, and proteins could be combined yielding graphene-based composite materials (GBCMs) to synergistically fulfill different biomedical requirements. The 2D conjugated structure, easy surface functionalization via covalent or van der Waal interactions, and combination with different components for versatile functionalities altogether contribute to the development of GBCM for healthcare applications. This review specifically focuses on GBCMs and discusses specific material properties relevant to their material applications in healthcare. Furthermore, the synthesis, toxicity, and biocompatibility of these GBCMs, and their interactions with biological materials are thoroughly discussed. Importantly, the recent cutting-edge applications in the field of healthcare, including its role in the development of antibacterial, anti-viral, and photothermal therapies, wound healing, drug delivery, neurodegenerative disease therapy, and biosensing based on GBCMs are well-updated. Additionally, the applications of GBCMs in point-of-care devices, wearable electronics, and tissue engineering are well summarized. We hope this review opens up more possibilities to design more innovative healthcare materials derived from graphene. © 2025 The Authors

关键词： Biocompatibility

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Optimizing bendability of flexible electronic devices using a neutral layer strategy

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Moore and More 2025年第1期2卷 1-18页

作者： Wu, Majiaqi Jian, Maoliang Zhang, Jianhua Yang, Lianqiao School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China

The neutral layer (NL) strategy is a key technique for improving the bendability of flexible electronic devices. In this study, by considering a three-layer structure as an example, the results obtained by finite element analysis (FEA) showed that the NL gradually moved to the top surface of the film as the film thickness and Young’s modulus increased, which are similar to the results produced by theoretical calculations. Subsequently, we optimized the thickness of a single NL structure and the failure bending radius of an indium tin oxide (ITO) electrode was reduced by 50% after optimization. In order to address the problems that affect the design of a single NL, we used optical clear adhesive (OCA) to generate multiple NLs. The FEA method was again applied to the structure and the results showed that decreasing the elastic modulus of the OCA and film thickness could reduce the maximum strain in the film. Finally, the effects of the OCA parameters on the protection of a multiple-layer ITO electrode structure were verified in bending experiments, which showed that the strain on ITO could be reduced from 5.6% to almost 0 in the two-electrode structure. The proposed strategies for designing single and multiple NLs can provide some guidance to facilitate optimizing the electronic infrastructure of flexible devices.

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Suppressing the Surface Roughness of InZnGeO Film and Enhancing TFT Performance by Stacking InZnGaO Layer

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IEEE Transactions on Electron Devices 2025年

作者： Ma, Zheng Peng, Cong Chen, Fa-Hsyang Yan, Guowen Xu, Lin Chen, Longlong Xing, Rubo Li, Xifeng Zhang, Jianhua Shanghai University Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials and Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai200072 China Kunshan Govisionox Optoelectronics Company Ltd Jiangsu Suzhou215301 China Hefei Visionox Technology Company Ltd Anhui Hefei230000 China

In this study, the effects of capping an InZnGaO layer on the In-rich InZnGeO film and associated thin film transistors (TFTs) were demonstrated. By introducing an InZnGaO layer and a subsequent annealing process, the channel surface roughness becomes smoother with a root mean square (rms) roughness from 2.250 to 0.672 nm. And the InZnGaO capped InZnGeO TFT shows a field effect mobility significantly increased by 37.5%. This improvement is due to the InZnGaO/InZnGeO structure not only protects the surface of the In-rich film, but also forms a heterojunction providing an additional path for carrier transport. Finally, we obtained that TFT with a field effect mobility of 22.35 cm2 V-1 s-1, exhibiting a low subthreshold swing (SS) of 0.24 V/dec, a threshold voltage of -0.16 V, and a threshold voltage drift of only -0.97 V after applying a positive gate bias stress of 20 V for 3600 s in a working environment of 70 ∘C. Therefore, indicating that an InZnGaO layer stacking on an In-rich film can reduce surface roughness and trap states to protect the In-rich channel and enhance the TFT performance. © 1963-2012 IEEE.

关键词： Thin films

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An Artificial Olfactory system Based on Synaptic Transistors for Precepting Hazardous Gas to Simulate Organ Injury

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ACS Sensors 2025年 2025 May 14页

作者： Dai, Junshuai Yuan, Li Wei, Yunkuan Zhou, Jixing Xue, Longwei Zhang, Xudong Zhang, Jianhua Chen, Longlong Ding, Xingwei Liu, Hai Zhao, Tingting Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University Shanghai 200072 China

Recent advances in artificial olfactory systems have attracted significant attention for their potential applications in humanoid robots and intelligent nasal devices capable of identifying objects and sensing hazards;however, the memory function is absent in traditional gas sensors, which is crucial to assess the long-term exposure risks. Meanwhile, due to the high operation temperature requirement, the gas sensors are usually difficult to integrate with the synaptic devices to form artificial olfactory systems. Here, we propose a novel artificial olfactory synaptic device to obtain and memorize formaldehyde information. The device is composed of an ion gel synaptic transistor integrated with a Ag-ZnO gas sensor, which can simulate the adverse effects of formaldehyde exposure to the human body and make an early warning. The Ag-ZnO gas sensor can detect and recognize different concentrations of formaldehyde as the chemiresistive signal at room temperature with ultraviolet irradiation instead of at high temperatures. The formaldehyde-induced resistive changes are transmitted to the gate voltage of the synaptic transistor, modulating the channel conductance to generate varying postsynaptic currents and to store gas information to realize the memory function. In addition, the postsynaptic current data of different concentrations can be imported into a support vector machine (SVM) for accurate identification, and early warning of different concentrations can be realized through the system. This bionic olfactory system provides a promising strategy for the development of advanced artificial intelligence and danger warnings. © 2025 American Chemical Society.

关键词： Ag-ZnO gas sensor artificial olfactory system formaldehyde ion gel synaptic transistor UV irradiation

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