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An Image Semantic Communication system Based on GAN and Relative Position-Encoding

IEEE Communications Letters 2025年

作者： Zhang, Ziqi Tan, Weijie Li, Chunguo Guizhou University College of Big Data and Information Engineering Guiyang550025 China Guizhou University State Key Laboratory of Public Big Data College of Computer Science and Technology Guiyang550025 China Advanced Cryptography and System Security Key Laboratory of Sichuan Province Chengdu610025 China Ministry of Industry and Information Technology Laboratory of Cryptography Application Technology Innovation and Testing Verification Beijing100015 China Southeast University School of Information Science and Engineering Nanjing210096 China

In image semantic communication, the complex wireless channel environment leads to the loss of image details and performance degradation during transmission. To address this issue, we propose an image semantic communication system based on Generative Adversarial Networks (GAN) and Relative Position-Encoding (RPE), named GAN-RpeSC. Specifically, in the system design, we introduce the GAN network at the output of the semantic communication framework to enhance the image restoration. We integrate the RPE module into the Visual Transformer (ViT) module, adding the RPE module to its Multihead Self Attention (MHSA), so that the model can better capture the spatial location information of the image. Experimental results show that the proposed GAN-RpeSC has significant advantages in improving image transmission quality, with a 0.3 dB improvement in peak signal-to-noise ratio (PSNR) compared to the ViT module alone. © 1997-2012 IEEE.

关键词： Encoding (symbols)

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Long-Lived Thermally Activated Delayed Fluorescence and Room Temperature Phosphorescence for Optoelectronic Devices

SSRN

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SSRN 2025年

作者： Wang, Ping Wang, Hanyu Long, Chunye Guan, Yan Wang, Yang Wu, Chengheng Wang, Pu Wang, Fuzhi Xie, He-Lou Key Lab of Environment-friendly Chemistry and Application in Ministry of Education Key Laboratory of Polymeric Materials and Application Technology of Hunan Province Key Laboratory of Advanced Functional Polymer Materials of Colleges Universities of Hunan Province College of Chemistry Xiangtan University Hunan Province Xiangtan411105 China Beijing National Laboratory for Molecular Sciences Key Laboratory of Polymer Chemistry and Physics of Ministry of Education Center for Soft Matter Science and Engineering College of Chemistry and Molecular Engineering Peking University Beijing100871 China State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources School of New Energy North China Electric Power University Beijing102206 China

Organic thermally activated delayed fluorescence (TADF) and room temperature phosphorescence (RTP) materials have merited enormous application prospects in organic optoelectronics. In spite of this, long-lived TADF and RTP dual emissions based on single polymers still face great challenge. In this work, we develop a monomer (CzBT) with twisted electron donating carbazole and electron withdrawing benzothiadiazole (D-A) structure and then copolymerize it with N-isopropylacrylamide (NIPAM) to achieve TADF and RTP dual-emission polymers (NP1-50~NP1-1000). They not only exhibit high efficiency (20%) and long-lived (268 ms) TADF emission, but also present red RTP emission with lifetime reaching 240 ms. Theoretical calculations confirm that the introduction of twisted D-A structure and heteroatoms can not only provide appropriate ΔEST (0.21 eV) between the singlet and triplet states to promote long-lived TADF, but also enhance spin orbital coupling for RTP emission. High performance active optical waveguide with quite low optical loss coefficient of 0.097 dB/mm was obtained for NP1-50 fiber. When applied to solution-processable organic light emitting diodes (OLED) devices, it yields excellent current efficiency of 62.7 cd/A with small efficiency roll-off and maximum luminance of 90858 cd/m2. This class of polymers pave the road for high efficiency optoelectronic devices. © 2025, The Authors. All rights reserved.

关键词： Fluorescence

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Pluggable multitask diffractive neural networks based on cascaded metasurfaces

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Opto-Electronic Advances 2024年第2期7卷 23-31页

作者： Cong He Dan Zhao Fei Fan Hongqiang Zhou Xin Li Yao Li Junjie Li Fei Dong Yin-Xiao Miao Yongtian Wang Lingling Huang Beijing Engineering Research Center of Mixed Reality and Advanced Display Key Laboratory of Photoelectronic Imaging Technology and System of Ministry of Education of ChinaSchool of Optics and PhotonicsBeijing Institute of TechnologyBeijing 100081China Institute of Modern Optics Tianjin Key Laboratory of Optoelectronic Sensor and Sensing Network TechnologyNankai UniversityTianjin 300350China Department of Physics and Optoelectronics Faculty of ScienceBeijing University of TechnologyBeijing 100124China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100191China Beijing Aerospace Institute for Metrology and Measurement Technology Beijing 100076China

Optical neural networks have significant advantages in terms of power consumption,parallelism,and high computing speed,which has intrigued extensive attention in both academic and engineering *** has been considered as one of the powerful tools in promoting the fields of imaging processing and object ***,the existing optical system architecture cannot be reconstructed to the realization of multi-functional artificial intelligence systems *** push the development of this issue,we propose the pluggable diffractive neural networks(P-DNN),a general paradigm resorting to the cascaded metasurfaces,which can be applied to recognize various tasks by switching internal *** the proof-of-principle,the recognition functions of six types of handwritten digits and six types of fashions are numerical simulated and experimental demonstrated at near-infrared ***,the proposed paradigm not only improves the flexibility of the optical neural networks but paves the new route for achieving high-speed,low-power and versatile artificial intelligence systems.

关键词： optical neural networks diffractive deep neural networks cascaded metasurfaces

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Dynamic hybrid visual-thermal multimodal perception neuromorphic devices based on defect modulation of electrospun nanofibers

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International Journal of Extreme Manufacturing 2025年第2期 753-766页

作者： Shengkai Wen Yanan Liu Yi Li Liang Xie Jun Li Jianhua Zhang School of Microelectronics Shanghai University School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai University

Neuromorphic devices, inspired by the intricate architecture of the human brain, have garnered recognition for their prodigious computational speed and sophisticated parallel computing capabilities. Vision, the primary mode of external information acquisition in living organisms,has garnered substantial scholarly interest. Notwithstanding numerous studies simulating the retina through optical synapses, their applications remain circumscribed to single-mode perception. Moreover, the pivotal role of temperature, a fundamental regulator of biological activities, has regrettably been relegated to the periphery. To address these limitations, we proffer a neuromorphic device endowed with multimodal perception, grounded in the principles of light-modulated semiconductors. This device seamlessly accomplishes dynamic hybrid visual and thermal multimodal perception, featuring temperature-dependent paired pulse facilitation properties and adaptive storage. Crucially, our meticulous examination of transfer curves,capacitance–voltage(C–V) tests, and noise measurements provides insights into interface and bulk defects, elucidating the physical mechanisms underlying adaptive storage and other functionalities. Additionally, the device demonstrates a variety of synaptic functionalities,including filtering properties, Ebbinghaus curves, and memory applications in image recognition. Surprisingly, the digital recognition rate achieves a remarkable value of 98.8%.

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Fabrication and Study of Micro-LED Quantum Dot Color Conversion Layer Based on Inkjet Printing

Fabrication and Study of Micro-LED Quantum Dot Color Convers...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Xinyi Wang Haojie Zhou Xiaoxiao Ji Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China School of Materials Science and Engineering Shanghai University Shanghai China

In this study, red and green quantum dot color conversion layer was successfully fabricated using inkjet printing (IJP) technology on a blue micro-light-emitting diode (Micro-LED) backlight. To reduce the optical crosstalk between different sub-pixels, a black matrix (BM) layer with a thickness of 15 μm was proposed. Furthermore, to protect quantum dots (QDs), a SiO 2 passivation layer with a thickness of 3 nm was uniformly deposited on the entire pattern by Atomic Layer Deposition (ALD). Subsequently, a pixel array featuring a sub-pixel size of 37.5 μm and a line width of 2 μm was fabricated on the BM layer treated with Reactive Ion Etching (RIE), and the thickness of the QDCC layer was controlled by RIE. The external quantum efficiencies of the red and green QDCC layer were 12.9% and 18.2%, respectively, and the emission spectra had blue light being transmitted, accompanied by a slight redshift. This research addresses the gaps in display applications and holds promise for the future advancement of Micro-LED display technology.

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Temperature Endurable Face-Sealing Polyisobutylene Film with Contactable Liquid Desiccant for the Encapsulation of OLEDs

SSRN

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SSRN 2024年

作者： Zheng, Haixai Zhu, Yangyang Zhao, Bingjia Lin, Yang Lan, Weixia Shi, Wei Wei, Bin School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China School of Microelectronics Shanghai University Shanghai200072 China Shanxi Datong University China

We propose a face-sealed encapsulation solution with simple process and low cost. The polyisobutylene encapsulation patch mixed with calcium oxide particles is attached to the surface of the OLEDs that is exposed to the hygroscopic agent in a face-sealing manner. We find that this encapsulation scheme exhibited excellent waterproof performance. The encapsulated OLED has a long shelf lifetime in water under high temperature conditions, which is manifested in a long underwater shelf lifetime of T95 (luminance drops to 95% of the initial luminance) of over 336 hours at 60°C. This strategy can be extended to roll-to-roll processes to expand the application of flexible photoelectronic devices. © 2024, The Authors. All rights reserved.

关键词： Luminance

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Mechanical Properties of Flip-Chip Bonding Structures for Micro-Led Devices: Cu-Cu Bonding with Passivation Layer and Indium Bumps Bonding

Mechanical Properties of Flip-Chip Bonding Structures for Mi...

引用

China Semiconductor Technology International Conference (CSTIC)

作者： Kefeng Wang Zehua Chen Xiaoxiao Ji Luqiao Yin Xiuzhen Lu Zhang Jianhua Zhang School of microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China School of Mechatronic Engineering and Automation Shanghai University Shanghai China

A traditional bonding structure with indium bumps and a new bonding structure with passivation layer using Cu bumps were simulated to bond Micro-LED and substrate. Anand model and bilinear isotropic hardening model were used to characterize the viscoplastic behavior of In and the plastic behavior of composite structure simplified from the combination of Cu and Au, respectively. Mechanical properties of two kinds of micro-display devices with different bonding structures were analyzed by the ANSYS finite element method and the thermo-mechanical coupling field. The deformation and stress of the micro-display device using Cu-Cu bonding structure with passivation layer are reduced by 19.5% and 59.1% compared with the device bonded by In bumps.

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Simulation Study on Electrothermal and Mechanical Coupling of Bumps in 5×5 Micro-LED Array

Simulation Study on Electrothermal and Mechanical Coupling o...

引用

China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Zhu Yang Hao Fu Kefeng Wang Xiaoxiao Ji Liang Chen Luqiao Yin Xiuzhen Lu Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China School of Mechatronic Engineering and Automation Shanghai University Shanghai China

As a frontier research field of next-generation display technology, Micro-LED technology has the advantages of high brightness, high contrast and high energy efficiency. With the development trend of high-power, multi-array LEDs, the research on thermal stability of LEDs is gradually deepened. In order to explore the thermal stability of bumps during the working of Micro-LED, COMSOL Multiphysics simulation software and finite element method were used to analyze the electrothermal and mechanical coupling of bumps in 5×5 Micro-LED array in this paper. Flip-chip bonding was employed for interconnection of Micro-LED array and Si driver chip with the gap except Micro-LED devices between sapphire and silicon substrate filled with underfill to alleviate the stress concentration. The effects of different filling materials, applied current densities, and dimensions of In bumps (cylindrical) on thermal stress and displacement of the Micro-LED array were analyzed in detail. The results show the stress and displacement of the bumps with polyimide (PI) underfill were the smallest than that of bumps with benzocyclobutene (BCB) and epoxy resin (EP) underfill. Additionally, the temperature, thermal stress, and displacement of the bumps were also affected by the applied current density and the size of the bumps.

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High-performance,large-area perovskite light-emitting diodes

High-performance,large-area perovskite light-emitting diodes

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第10届亚洲和澳大利亚真空与表面科学会议、中国真空学会2021学术年会、第十五届国际真空科学与工程应用学术会议

作者： Lin Wang Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University

Metal halide perovskites based light-emitting diodes (PeLEDs) have attracted extensive attention for lighting and display applications because of their excellent advantages,such as narrow emission bandwidth,color tuna... 详细信息

关键词： metal halide perovskite light-emitting diodes large-area

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High-Performance Stable Hybrid Inorganic-Organic Light-Emitting

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SmartMat 2025年第1期6卷 195-202页

作者： Huixue HuangI Zhagen Miao?|Haikuo Gao I Jin Cao|Yanqiong ZhengI Can Gao?|Xifeng Li|Guangcai Yuan+Huani Dong D Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghaiChina I 2Bejing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBejingChina I 3shandong Engineering Research Center of Aeronautical Materials and DevicesCollege of Aeronautical EngineeringShandong University of AeronauticsBinzhouChina I 4BOE Technology Group Co.Ltd.BeijingChina

Light-emitting transistors(LETs)as novel integrated optoelectronic devices demonstrate great potential applications in smart displays and visual intelligent *** construction of high-performance area-emission LETs with low power con-sumption and good reliability is urgently needed for advancing their applications,however,this integration has not been realized within a single ***,we demonstrate a kind of planar-driven hybrid LET(PDHLET)that makes use of the unique advantages of high mobility and stability of inorganic and organic semiconductors in the same *** incorporating an indium-zinc-gallium-oxide(InZnGeO)conducting layer and organic emissive layer,a high-performance stable blue-emissive PDHLET is constructed,giving a high Ion/lofr ratio approaching 6.1×10°and a low Von of 5.5 V along with maximum brightness of 1264 cd/m?as well as small Vrh shift of 0.5V after 1000s positive stress ***,a systematic simulation,including charge concentration and Langevin recombination rate,is carried out on PDHLET for the first time,demonstrating good consistency with experimental *** confirms the uniformity of high redistributed charge concentration in the InZnGeO conducting layer which thus enables good area *** study provides a new avenue for constructing high-performance stable LETs toadvancevarious field applications.

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