In this paper, we propose a new pixel structure for the organic Light Emitting Diode (OLED) 0.65 inch SVGA resolution micro-display with 8 bit gray level. The proposed pixel structure is composed of 4 MOSFETS and one ...
详细信息
This paper proposed a novel approach to segment objects from the H.264 compressed video with moving background. At first, the noisy motion vectors are eliminated from the motion field by vector median filtering. Then ...
详细信息
This study reports highly efficient and stable quantum dot light-emitting diodes (QLEDs) based on solution processed metal-oxide films as hole injection layer (HIL). The best-performing device with Cu:NK) HIL exhibits...
详细信息
We improved the current efficiencies of Organic Light-emitting diodes from 50 cd/A to 77.7 and 65.4 cd/A by employing Ag-thin-film and Al2O3-thin-film longitudinal wave guides with the same device structures, respecti...
详细信息
We demonstrated efficient electron injection and transport in organic light-emitting diodes using an electron-transport layer composed of 4, 7-diphenyl-1, 10-phenanthroline (BPhen) with 8-hydroxy-quinolinato lithium (...
详细信息
ISBN:
(纸本)9787561752289
We demonstrated efficient electron injection and transport in organic light-emitting diodes using an electron-transport layer composed of 4, 7-diphenyl-1, 10-phenanthroline (BPhen) with 8-hydroxy-quinolinato lithium (Liq) co-deposited layer. Based on cohost strategy, a low-voltage driving of OLEDs with the structure of [ ITO/m-MTDATA/NPB/Alq/Liq (33%) : Bphen/LiF/Al] has been achieved. It is found that the power efficiency is enhanced by ∼ 20% while driving voltage is reduced by ∼ 15% as compared to the control device. Therefore this strategy with the judicial doping concentration of Liq greatly increases the electron conductivity in ETL, leading to the lowering the operating voltage and enhancing the power efficiency of the OLEDs.
The electron injection transportation in OLEDs were improved by using a Gaq layer between Alq (or Bphen) and TBADN as step barrier. Since the LUMO (Lowest Unoccupied Molecular Orbital) of Gaq (2.9 eV) lies in between ...
详细信息
ISBN:
(纸本)9787561752289
The electron injection transportation in OLEDs were improved by using a Gaq layer between Alq (or Bphen) and TBADN as step barrier. Since the LUMO (Lowest Unoccupied Molecular Orbital) of Gaq (2.9 eV) lies in between that of Alq (3.1 eV) (or Bphen (3.0 eV)) and TBADN (2.8 eV), step barrier from Alq (or BPhen) though Gaq to TBADN can be formed. The experimental results indicate that: The J-V characteristics of both the electron only and the complete devices show the increase of the current density in devices with step barrier compared with the devices without step barrier. For electron only devices, the driving voltage at the current density of 20 mA/cm2 were reduced from 7.9 V to 4.9 V for devices with Alq, and from 4.2 V to 3.1 V for devices with Bphen respectively owing to the introduce of step barrier. For the complete devices, after Gaq step barrier was introduced, at 20 mA/cm2, the driving voltage were reduced from 7 V to 5. 8 V for devices with Alq and from 6.2 V to 5.1 V for devices with Bphen. When step barrier was introduced, the luminance at 200 mA/cm2 were increased from 1684 cd/m2 to 2 736 cd/m2 for device with Alq, and from 1026 cd/m2 to 2466 cd/m2 for devices with BPhen respectively. The phenomena were explained by using tunnel theory.
An organic thin-film transistor (OTFTs) having MoO3/Al electrode and OTS/SiO2 bilayer gate insulator configuration between gate insulator and source/drain electrodes is investigated. Thermal SiO2 layer grown is used a...
详细信息
ISBN:
(纸本)9787561752289
An organic thin-film transistor (OTFTs) having MoO3/Al electrode and OTS/SiO2 bilayer gate insulator configuration between gate insulator and source/drain electrodes is investigated. Thermal SiO2 layer grown is used as the OTFT gate dielectric;Copper phthalocyanine(CuPc) is used as an active layer. We have found that using silane coupling agents-octade-cyltrichlorosilane (OTS) to reduce the surface energy of the SiO2 gate dielectric and significantly improve device performance. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio at the same time. The device with MoO3/AI electrode had similar Ids compared to the device with Au electrode at same gate voltage. MoO3/AI was proved to be a superior electrode. Our results indicate that using double-layer of electrode and double-layer of insulator is an effective way to improve OTFT performance.
Metasurfaces have facilitated numerous innovative applications in the scope of nonlinear ***,dynamically tuning the nonlinear response at the pixel level is very *** work proposed a novel method to electrically manipu...
详细信息
Metasurfaces have facilitated numerous innovative applications in the scope of nonlinear ***,dynamically tuning the nonlinear response at the pixel level is very *** work proposed a novel method to electrically manipulate the local amplitude and phase of third-harmonics generation(THG)by integrating the giant nonlinear responses resulting from intersubband transitions of multiple quantum wells(MQW)with plasmonic *** demonstrated method may pave the way to realize nonlinear optical elements with versatile functionalities by electrically tuning and promoting the advancements of innovative applications such as lidar,3D displays,optical encryption,optical computing,and so on.
Fall detection is an important problem in the research of abnormal behavior recognition. In this chapter, a novel real-time method is proposed to detect human fall with a single uncalibrated camera by the changes of g...
详细信息
暂无评论