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作者： Xu, Meihua Ran, Feng Chen, Zhangjin Zhang, Qing Key Laboratory of Advanced Displays and System Application Ministry of Education Shanghai University China School of Mechanical Engineering and Automation Shanghai University Campus 149 Yanchang Rd. Shanghai 200072 China

ISBN: (纸本)9787561752289

This paper presents the design and implementation of FPD system based on the fractal scanning IP core. The system is made up of the multimedia video card, the Ethernet video transmitter unit, the fractal scanning controller and the LED flat panel display. Using the fast Ethernet agreement technique to substitute the traditional difference data transfer method obtained the advantages such as fast speed, long distance data transmission and the high reliability of transceiving data. The novel control mode that the fractal scanning IP core described with Verilog language is embedded in the FPGA hardware frame can efficiently increase the imaging gray scales, and speed up frame frequency of display system. Serial applications and tests indicate that there is no need to using high-speed IC circuits to realize the high articulation and resolution display of video image with the proposed method.

关键词： Scanning

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IC design for OLED scan driver with dual radix clock and acyustable grey scale

IC design for OLED scan driver with dual radix clock and acy...

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作者： Feng, Ran Xu, Mei-Hua Chen, Zhang-Jin Key Laboratory of Advanced Displays and System Application Ministry of Education Shanghai University China School of Mechanical Engineering and Automation Shanghai University Campus 149 Yanchang Rd. Shanghai 200072 China

ISBN: (纸本)9787561752289

The paper first argues the system level design of the OLED drive chip. After analyzing the the feature of OLED and the display pane[1] , it presents the process to eliminate the cross talk effect by the precharge circuit, and compares the drive efficiency between two precharge schemes, then proposes the dual radix interleaving clock architecture to enhance the lighting efficiency and dynamic feature of the OLED display panel. The circuit is realized by the Dual State Machine Locks. At last it demonstrates the effect on the efficiency of both display and transmission among three RAM management architecture, which is to enable the OLED drive chip to be adapt to different gray scales.

关键词： Locks (fasteners)

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Methodology research & ASIC design for OLED-on-silicon pixel circuit

Methodology research & ASIC design for OLED-on-silicon pixel...

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作者： Feng, Ran Zhou, Jie Xu, Mei-Hua Wu, Ming Key Laboratory of Advanced Displays and System Application Ministry of Education Shanghai University China School of Mechanical Engineering and Automation Shanghai University Campus 149 Yanchang Rd. Shanghai 200072 China

ISBN: (纸本)9787561752289

This paper proposes a time grayscale control method associated with source current mirror using binary latch scheme to take place conventional structure which uses capacitance with MOSFET. The time grayscale control method based on the characteristics that the Luminance can "stay for a while" in human eyes controls the time period of pixel work to make different gray scales, and it solves the division limitation of magnitude control. The data we used has 2 states, high or low, just make the OLED on or off. In the pixel select period, the data is locked in the binary latch, and during the unselect period, the data in the latch will still make the OLED work as the situation just in the select period. Here we use high impedance , high precise constant current source mirror structure to drive the OLED, which can solve the problems including delay of the capacitance and nonuniform over display in the drive circuit of AM-OLED in existence.

关键词： Capacitance

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LARGE-EDDY SIMULATION OF THREE-DIMENSIONAL VORTICAL STRUCTURES FOR AN IMPINGING TRANSVERSE JET IN THE NEAR REGION

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Journal of Hydrodynamics 2007年第3期19卷 314-321页

作者： FAN Jing-yu ZHANG Yan WANG Dao-zeng Shanghai Institute of Applied Mathematics and Mechanics Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Applications （Shanghai University） Ministry of Education and SMIT Center Shanghai University Shanghai 200072 China Department of Applied Mechanics Chalmers University of Technology SE-412 96 Gothenburg Sweden Shanghai Institute of Applied Mathematics and Mechanics Shanghai University Shanghai 200072 China

The three-dimensional vortical structures for an impinging transverse jet in the near region were numerically investigated by means of Large-Eddy Simulation （LES）. The LES results reproduced the skewed jet shear layer vortices close to the jet nozzle and the scarf vortex in the near-wall zone in good agreement with the experimental observations. Different vortical modes in the skewed jet shear layer close to the jet nozzle were identified depending upon the velocity ratio between jet and crossflow, namely changing from an approximately axisymmetric mode to a helical one with the velocity ratios varying from 20 to 8. Moreover, the scarf vortex wrapped around the impinging jet in the near-wall zone showed distinct asymmetry with regard to its bilateral spiral legs within the near region. And the entrainment of the ambient crossflow fluids by the scarf vortex in the near-wall zone was appreciably influenced by its asymmetry and in a large part occurred on the surface of the spiral roller structures in the course of spreading downstream.

关键词： Large-Eddy Simulation （LES） impinging jet crossflow vortical structure entrainment

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Design of PWM Controller in a MCS-51 Compatible MCU

Design of PWM Controller in a MCS-51 Compatible MCU

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International Symposium on High Density Packaging and Microsystem Integration (HDP)

作者： Yue-Li Hu Wei Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai China

This paper presents a design of pulse-width modulated (PWM) controller module in a MCU based on MCS-51 structure. The design can generate 2-channel programmable periodic PWM signals. These output PWM signals from MCU can be used for a variety of applications including motor control. The function of the design allows users to select independent or complementary inversion timing relationships between 2 PWM wave forms. The latter mode selection also includes optional dead time function to support driving H-bridges and inverters. Therefore, users can control the output PWM signals through setting the duty-cycle registers. After the successful simulation at the front end, practical experiments made on a NIOS development board verify the design.

关键词： Pulse width modulation Signal generators Space vector pulse width modulation Voltage control Frequency Control systems Motor drives Clocks Switches Pins

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Design for FSC controller of LCOS

Design for FSC controller of LCOS

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作者： Yan, Limin Gao, Hui Wang, Tianxiong Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University China Microelectronic R and D Center Shanghai University Campus 149 Yanchang Road Shanghai 200072 China

ISBN: (纸本)9787561752289

Liquid-crystal-on-silicon (LCOS) micro-displays are the advanced displays that integrate silicon very-large-scaled-integration (VLSI) circuits with thin-film-transistor liquid crystal displays (TFT-LCD). Their exhibiting fast response, high brightness, high image quality, low power dissipation and low cost have been developed. The device represents the future development direction of high-end LCD. According to the three primary colors principle, with Field sequential color (FSC) displays, a full color image is divided into three sub-frames in which red, green and blue beams are separately modulated by a single LCOS micro-display in rapid sequence and projected onto a screen. The three images are temporally integrated by the eye over one frame time and a full color image is perceived. This paper provides a scheme for LCOS Field Sequence Color (FSC) interface controller design using Verilog language.

关键词： Computer hardware description languages

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Low-drive-voltage OLEDs with a Novel Cohost Electron Transport Layer

Low-drive-voltage OLEDs with a Novel Cohost Electron Transpo...

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2007亚洲显示国际会议

作者： M.A.Khan Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai 200072 China Department of Materials Science Shanghai University Jiading Campus Shanghai 201800 China

We demonstrated efficient electron injection and transport in organic light-emitting diodes using an electron-transport layer composed of 4,7-diphenyl-1,10-phenanthroline (BPhen) with 8-hydroxy-quinolinato lithium (Liq) co-deposited *** on cohost strategy,a low-voltage driving of OLEDs with the structure of [ITO/m-MTDATA/NPB/Alq/Liq (33%):Bphen/LiF/A1] has been *** is found that the power efficiency is enhanced by～20% while driving voltage is reduced by～15% as compared to the control *** this strategy with the judicial doping concentra- tion of Liq greatly increases the electron conductivity in ETL,leading to the lowering the operating voltage and enhancing the power efficiency of the OLEDs.

关键词： Organic Light Emitting Diodes Electron Injection and Transport Low-voltage Driving

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Highly efficient yellow OLED using phosphorescent and fluorescent dopants

Highly efficient yellow OLED using phosphorescent and fluore...

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作者： Wang, X.R. Tang, H. Ding, G.H. You, H. Ma, D.G. Tian, H. Sun, R.G. Key Laboratory of Advanced Displays and System Application Shanghai University Jiading Shanghai 201800 China Key Laboratory of Advanced Materials Institute of Fine Chemicals East China University of Science and Technology Shanghai 200237 China Changchun Institute of Applied Chemistry Chinese Academy of Sciences Graduate School of the Chinese Academy of Sciences Changchun Jilin 130022 China

ISBN: (纸本)9787561752289

The efficiencies of an organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline) aluminum (Alq3) as host and tetraphenylnapthacene (Rubrene) as yellow dopant were greatly increased by adding a small amount (0.3 wt% ) of a phosphorescent Ir compound Iridium(III)bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-l-benzopyran-2-onato- N′, C4) (acetyl acetonate) (Ir(C6)2(acac) )sensitizer. The device had a simple structure of indium tin oxide (ITO)/4, 4′, 4″- tris(N-(2-naphthyl)-N-phenyl-amino) triphenylamine (T-NATA) (40 nm)/N, N′-bis (1-naphthyl)-N, N′-diphenyl-l, l′-biphenyl4, 4′-diamine (NPB) (40 nm)/Alq3: Rubrene (0. 7 wt% ): Ir(C6) 2 (acac) (0.3 wt% ) (40 nm)/Alq3 (40 nm)/ LiF (1 nm)/ Al (120 nm), and the current efficiencies of this device keep a high value of 13.9 cd/A, even the luminance rising to 37 000 cd/m2. The Commission International d'Eclairage (CIE) coordinates x and y are 0.46, 0. 44 of yellow color. The high efficiency at the high luminance was proposed due to the phosphorescent Ir(C6)2(acac) can harvest the singlet and triplet excitons formed in Alq3 and then efficiently transfer to yellow dopant Rubrene.

关键词： Fluorescence

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Low Voltage Organic Light-emitting Devices with Step Barrier Layer

Low Voltage Organic Light-emitting Devices with Step Barrier...

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2007亚洲显示国际会议

The electron injection transportation in OLEDs were improved by using a Gaq layer between Alq （or Bphen） and TBADN as step *** the LUMO （Lowest Unoccupied Molecular Orbital） of Gaq （2.9 eV） lies in between that of Alq （3.1 eV） (or Bphen（3.0 eV）) and TBADN （2.8 eV）,step barrier from Alq （or BPhen） though Gaq to TBADN can be *** experimental results indicate that:The J-V characteristics of both the electron only and the complete devices show the increase of the current density in devices with step barrier compared with the devices without step barrier. For electron only devices,the driving voltage at the current density of 20 mA/cm were reduced from 7.9 V to 4.9 V for devices with Alq,and from 4.2 V to 3.1 V for devices with Bphen respectively owing to the introduce of step *** the complete devices,after Gaq step barrier was introduced,at 20 mA/cm,the driving voltage were reduced from 7 V to 5.8 V for devices with Alq and from 6.2 V to 5.1 V for devices with *** step barrier was introduced,the lumi- nance at 200 mA/cm were increased from 1 684 cd/m to 2736 cd/m for device with Alq,and from 1026 cd/m to 2466 cd/m for devices with BPhen *** phenomena were explained by using tunnel theory.

关键词： OLEDS Low Voltage Tunnel Theory

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Nanotechnologies and nanomaterials for thermal management of microsystems

Nanotechnologies and nanomaterials for thermal management of...

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International Symposium on High Density Packaging and Microsystem Integration 2007, HDP'07

作者： Johan, Liu Key Laboratory of Advanced Display and System Applications Yan Chang Campus Shanghai University No 149 Yan Chang Road 200072 China SMIT Center Department of Microtechnology and Nanoscience Chalmers University of Technology Se 412 96 Gothenburg Sweden

ISBN: (纸本)1424412536

One important function of microsystem packaging is to remove the heat generated by the integrated circuits (ICs). The thermal management of microsystems has now become more crucial as the power density of ICs increases dramatically. To remove the big amount of heat is a big challenge for the packaging technology. An attractive solution is to utilize newdeveloped nanotechnologies and nanomaterials to enhance the heat removal from microsystems. This paper generally reviews the related research work performed at SMIT center. Three approaches are presented: thermal interface materials (TIMs) made of electrospun nanofibers and nano thermally conductive particles, microchannel coolers based on carbon nanotubes (CNTs), and CNT-based high thermally conductive interconnects. These three techniques provide a systematic solution to the efficient thermal management of microsystems. © 2007 IEEE.

关键词： Nanostructured materials

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