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Low-temperature spatial atomic layer deposited Ga2O3 films for high-performance flexible deep ultraviolet photodetector

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Materials Letters 2023年 340卷

作者： Hsu, Chia-Hsun Zhu, Run-Feng Kang, Pin-Chun Gao, Peng Wu, Wan-Yu Wuu, Dong-Sing Lien, Shui-Yang Zhu, Wen-Zhang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-electronic and Communication Engineering Xiamen University of Technology Xiamen361026 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361004 China Fujian Provincial Key Laboratory of Nanomaterials Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fujian Fuzhou350002 China Department of Materials Science and Engineering National United University Miaoli36063 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan Department of Materials Science and Engineering Da-Yeh University Changhua51591 Taiwan

This research aims to prepare amorphous gallium oxide (α-Ga2O3) films for use in flexible deep ultraviolet photodetectors. The films are deposited using high-speed spatial atomic layer deposition (SALD) at different substrate temperatures. The experimental results show that the saturating deposition rate at 145–155 °C is four to sixteen times higher than that of temporal ALD. Moreover, under the saturated SALD conditions the deposited film has less carbon impurities, oxygen-related defects, and greater compactness than under non-saturated conditions. Finally, a high-performance flexible deep ultraviolet α-Ga2O3 photodetector with fast decay time of 161 µs and low dark current density of 6.8 × 10-10 A/cm2 is achieved. © 2023 Elsevier B.V.

关键词： Gallium compounds

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Erratum to: The Influence of Hafnium Doping on Density-of-States in Zinc Oxide Thin-Film Fransistors Deposited Via Atomic Layer Deposition

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Nanoscale research letters 2017年第1期12卷 172页

作者： Xingwei Ding Cunping Qin Jiantao Song Jianhua Zhang Xueyin Jiang Zhilin Zhang Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University 149 Yanchang Road Shanghai Jingan District 200070 People's Republic of China. School of Mechatronics and Automation Shanghai University Shanghai 200072 China. Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University 149 Yanchang Road Shanghai Jingan District 200070 People's Republic of China. dxwshu@***. School of Mechatronics and Automation Shanghai University Shanghai 200072 China. dxwshu@***. Department of Materials Science Shanghai University Shanghai 200072 China.

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P-13.7: High-quality OLED Micro-display aided by PGL-SCS operator

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SID Symposium Digest of Technical Papers 2018年第S1期49卷

作者： Aiying Guo Feng Ran Jianhua Zhang Meihua Xu Huaming Shen Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai China Microelectronic Research and Development Center Shanghai China School of Mechatronics Engineering and Automation Shanghai China

In the high-quality OLED micro-display, it is difficult to balance the faster frame refresh rate and higher resolution frame. In order to solve this problem, this paper propose a high-efficient PGL-SCS (Particle Gray Level-Scan Control Strategy) operator as the new scan strategy, which is based on the digital fractal scan strategy. This paper firstly introduces the theory model of PGL-SCS operator, which based on the relationship between sub-space code sequences and bit code sequences for different gray levels. Second, the theory performance of PGL-SCS is analysed. At last, the PGL-SCS operator is tested using the IP core and self-build HD OLED micro-display system. The experiments shows that the PGL-SCS operator can obtain 100% scan utilization and a significant decrease in the system clock frequency, compared with the traditional scan methods. With the proposed PGL-SCS there is no need of using high-speed IC circuits to realize the high-resolution and high-quality OLED micro-display system.

关键词： PGL-SCS Scan OLED Micro-display Digital

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The influence on characteristics parameters for white-LED with current

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Diangong Jishu Xuebao/Transactions of China Electrotechnical Society 2013年第SUPPL.2期28卷 234-238页

作者： Fang, Jinglu Niu, Pingjuan Tian, Huijuan School of Electronics and Information Engineering Tianjin Polytechnic University Tianjin 300387 China Key Laboratory of Advanced Electrical Engineering and Energy Technology Tianjin Polytechnic University Tianjin 300387 China Engineering Research Center of High Power Solid State Lighting Application System Ministry Education Tianjin 300387 China

Light-emitting diodes (LEDs) are a kind of Electroluminescent Devices, characteristics parameters have a close relationship with the current. This paper mainly talks about in the two kinds of current power supply, continuous current supply and PWM pulse current supply, the effects of current on characteristics parameters of white LEDs, such as luminous flux, spectra, domain wavelength, peak wavelength, correlation color temperature and color coordinate. Through experimental test and data analysis, some conclusions was obtained that for continuous current supply, the injection current has the greatest impact on LED the luminous flux and correlation color temperature, almost linear relationship, and has a little effects on spectra, domain wavelength, color coordinate and peak wavelength. For PWM pulsed current supply, the change trend of all characteristic parameters are similar to continuous current supply, but better and more stable than continuous current supply. The results can guide the choice of current power supply mode to use and help towards the application of LED in domestic light.

关键词： Pulse width modulation

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Experimental study on electrical properties and stability of CNT bumps in high density interconnects

Experimental study on electrical properties and stability of...

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IEEE Conference on Nanotechnology

作者： Yan Zhang Ying-jie Zhou Jing-yu Fan Di Jiang Yifeng Fu Shi-wei Ma Johan Liu Key Laboratory of Advanced Display and System Applications Ministry of Education & SMIT Center School of Mechatronics Engineering and Automation Shanghai University Shanghai China SMIT Center School of Mechatronics Engineering and Automation Shanghai University Shanghai China Shanghai Institute of Applied Mathematics and Mechanics Shanghai University Shanghai China BNSL Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden SHT Smart High Tech AB Gothenburg Sweden Department of Automation Shanghai University Shanghai China

ISBN: (纸本)9781479906741

With the minimization development of electronic devices and products, nanotechnology and nanomaterials are widely applied in different fields of electronic packaging. Carbon nanotube (CNT) is an ideal material due to its excellent electrical and thermal conductivities. In the present paper, the application of CNT bundles as chip bumps was experimentally investigated. The electrical resistances of the CNT interconnects were measured, and the thermal and humidity test were conducted. In addition, the CNT forests on fine pitch copper lines under various environmental test conditions were observed to evaluate the stability.

关键词： Carbon nanotubes Integrated circuit interconnections Educational institutions Resistance Scanning electron microscopy Thermal conductivity Electrical resistance measurement

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Synthesis of ZnO nanorods based on electrospinning technology

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Journal of Physics: Conference Series 2020年第3期1549卷

作者： Xiuzhen Lu Yongqian Sun Ziwei Jiang Maomao Zhang Yang Lin SMIT Center School of Mechatronic Engineering and Automation Shanghai University Shanghai 200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai 200072 China

A new method for fabrication of ZnO nanorods was reported. ZnO nanorods were synthesized by electrospinning technology and heat treatment with polyvinyl alcohol (PVA) and Zinc acetate as precursor. After heat treatment of ZnO electrospun nanofibers, ZnO nanorods were obtained. Morphology of ZnO nanorods was characterized by Scanning electron microscopy (SEM). Various morphologies, such as sphere, flower and plane composed of ZnO nanorods were observed. Transmission electron microscopy (TEM) images demonstrated ZnO nanorods are a single crystalline structure with a diameter of 100-180 nm. The hexagonal wurtzite structure of ZnO nanorods was determined by X-ray diffraction (XRD) pattern and Raman spectra.

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[email protected]Core–Shell Nanostructures: Toward a New Platform for Controlling Optical Properties at the Nanoscale

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The Journal of Physical Chemistry C 2021年第37期125卷 20606-20616页

作者： Wajdi Chaâbani Julien Proust Samuel Ouellet Artur Movsesyan Jérémie Béal Renaud Bachelot Tao Xu Anne-Laure Baudrion Pierre-Michel Adam Denis Boudreau Abdallah Chehaidar Jérôme Plain Light nanomaterials nanotechnologies (L2n) Laboratory CNRS ERL 7004 University of Technology of Troyes 12 rue Marie Curie F-10004 Troyes Cedex France Laboratoire de Physique-Mathématiques et Applications Faculté des Sciences de Sfax Université de Sfax B.P. 1171 3000 Sfax Tunisia Centre d’optique Photonique et Laser Université Laval Québec Québec G1 V 0A6 Canada School of Mechatronic Engineering and Automation Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 200072 Shanghai China

Hybrid dielectric–metal colloid nanoparticle heterostructures have recently attracted attention in both fundamentals and applications. In this paper, we developed a new approach based on mechanical grinding and chemical synthesis in order to obtain hybrid dielectric–metal nanoparticles. By increasing the amounts of the stabilizing agent (polyvinylpyrrolidone (PVP)), three different types of hybrid colloidal structures were obtained, Si/Au core–island, core–shell, and core–shell oligomers heterostructures, respectively. The obtained colloidal heterostructures were analyzed by dynamic light scattering (DLS) and scanning electron microscope (SEM) measurements. Moreover, the optical properties of hybrid nanostructure have been carefully studied. A splitting was observed in the extinction spectra of colloidal solutions for different Si/Au colloidal heterostructures compared to Si colloidal nanoparticles, attributed to the hybridization of plasmon. Thanks to photolitholographic and drop-cast deposition techniques on a substrate, we were able to locate the colloidal nanoparticles heterostructures and to measure the backward scattering spectra using single-particle dark-field scattering spectroscopy. To better understand scattering results, FDTD simulations of scattering cross-section and electric near-field distributions were performed. As is well-known, the scattering spectrum of the pristine Si core is dominated by electric and magnetic dipolar modes in the visible region. More importantly, the scattering spectra of Si/Au core–island and core–shell support several phenomena such as collective magnetic dipolar modes and multiple Fano lineshapes. Our finding highlights the potential of our dielectric–metal heterostructures as a platform for studying light–matter interactions at the nanoscale.

关键词： Semiconducting nanostructured materials Gold Nanoparticles Scattering Heterostructures

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Manufacture, Microstructure and Microhardness Analysis of Sn-Bi Lead-Free Solder Reinforced with Sn-Ag-Cu Nano-particles

Manufacture, Microstructure and Microhardness Analysis of Sn...

引用

2008 International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP 2008), vol.2

作者： Lili Zhang Wenkai Tao Johan Liu Yan Zhang Zhaonian Cheng Cristina Andersson Yulai Gao Qijie Zhai Key Laboratory of Advanced Display and System Applications & SMIT Center School of Automation and Mechanical Engineering Shanghai University Shanghai China SMIT Center & Bionano Systems Laboratory Department of Microtechnology and Nanoscience Chalmers University of Technology Gothenburg Sweden School of Materials Science and Engineering Shanghai University Shanghai China

This paper investigates a composite solders obtained by adding Sn-3.0Ag-0.5Cu (SAC) nano-particles into conventional eutectic Sn-58Bi solder paste. The microstructure analysis and the measurement of the Vickers microhardness have been carried out. Utilizing the self-developed Consumable-electrode Direct Current Arc (CDCA) technique, the Sn-3.0Ag-0.5Cu nano-particles with an average particle size between 20 and 80nm are prepared. The reinforced lead-free Sn-Bi solder was prepared by thoroughly blending the nanometer-sized SAC particles into the eutectic Sn-Bi solder paste. The SAC reinforced Sn-Bi composite solder paste was printed onto ENIG/Cu metalized substrate and reflowed in a conventional reflow oven. After reflow, the morphology of the as-solidified reinforced composite solder was observed by means of SEM and TEM. The Vickers microhardness measurements indicated that the addition of SAC nano-particles enhances the overall strength of the eutectic solder, and the results agree well with the theory of dispersion strengthening.

关键词： Soldering Microstructure Lead Materials Grain boundaries Nanoparticles Packaging

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Investigation of Low Temperature Amorphous (in X Ga1- X )2o3 Films Modulated by Indium Content for Optimization in Solar-Blind Photodetector

SSRN

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SSRN 2024年

作者： Wang, Chen Zhang, Yu-Chao Fan, Teng-Min Yi, Cong Zhou, Chen-Hao Kang, Pin-Chun Wu, Wan-Yu Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-electronic and Communication Engineering Xiamen University of Technology Xiamen361024 China National Measurement and Testing Center for Flat Panel Display Industry Xiamen Institute of Measurement and Testing Xiamen361004 China Department of Materials Science and Engineering National United University Miaoli360302 Taiwan Department of Applied Materials and Optoelectronic Engineering National Chi Nan University Nantou54561 Taiwan Department of Biomedical Engineering Da-Yeh University Changhua51591 Taiwan

In this study, bandgap engineering of amorphous (InxGa1-x)2O3 alloy films fabricated at room temperature using pulsed laser deposition and alloy targets with different indium contents from 0% to 50% have been investigated. The effect of indium content on the characteristics of (InxGa1-x)2O3 films and the performance of metal-semiconductor-metal solar-blind photodetectors have been explored in detail. The moderate number of indium atoms introduced into Ga2O3 can obtain a flat surface morphology and adjusted bandgap to enhance the performance of solar-blind photodetector. When the excessive indium atoms were incorporated into the film, the obviously In-rich (InxGa1-x)2O3 alloy nano-clusters are observed on the film surface despite of the low growth temperature. It can be attributed to the segregation phenomenon because of the solid solubility limitation for indium in Ga2O3. Both of dark current and photocurrent of (InxGa1-x)2O3 photodetector increase with the incremental indium content mainly attributed to enhanced oxygen deficiency. As a result, the solar-blind photodetector can achieve an optimal performance using a balanced indium content of 20% with an extremely low dark current of 4.4×10-12 A, a responsivity of 10.8 mA/W, a substantial on/off current ratio of 1.5×104 and a short rise/decay time of 0.33 s/0.54 s. © 2024, The Authors. All rights reserved.

关键词： Temperature

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Investigation of amorphous (InxGa1-x)2O3 alloy films modulated by indium content for optimization in solar-blind photodetector

SSRN

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SSRN 2024年

Bandgap engineering using (InxGa1-x)2O3 alloy structure can be a promising technique towards enhancing the performance of solar-blind photodetectors due to its tunable optical and electronic properties. In this study, amorphous (InxGa1-x)2O3 alloy films have been fabricated at room temperature using pulsed laser deposition and alloy targets with different indium contents from 0% to 50%. The effect of indium content on the characteristics of (InxGa1-x)2O3 films and the performance of metal-semiconductor-metal solar-blind photodetectors have been explored in detail. As the increase of indium content, the narrowing bandgap may be contributed to the lower forbidden gap of In2O3 and the lattice disorder induced by the corporation of In into the films. The moderate number of indium atoms introduced into Ga2O3 can obtain a flat surface morphology and adjusted bandgap to enhance the performance of solar-blind photodetector. When the excessive indium atoms were incorporated into the film, the obviously In-rich (InxGa1-x)2O3 alloy nano-clusters are observed on the film surface despite of the low growth temperature. It can be attributed to the segregation phenomenon because of the solid solubility limitation for indium in Ga2O3. Both of dark current and photocurrent of (InxGa1-x)2O3 photodetector increase with the incremental indium content mainly attributed to enhanced oxygen deficiency. As a result, the solar-blind photodetector can achieve an optimal performance as balanced indium content rising to 20% with an extremely low dark current of 4.4×10-12 A, a responsivity of 10.8 mA/W, a substantial on/off current ratio of 1.5×104 and a short rise/decay time of 0.33 s/0.54 s. © 2024, The Authors. All rights reserved.

关键词： Photons

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