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Low Subthreshold Swing Enables High Synaptic Weight Gains based on Channel-Side Gate Dependent Electrolyte Transistors FET Design

Low Subthreshold Swing Enables High Synaptic Weight Gains ba...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Qiming Gong Fei Wang Hao Zheng Mengjiao Li School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai People's Republic of China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

With the development of IoT and AI technologies, brain-like synaptic devices with precise weight modulation of synaptic plasticity and controllable preparation are of great significance for developing neuromorphic computing and intelligent sensing technologies. In this paper, we design a series of side-gate electrolyte transistors with varying gate-channel distances and systematically examine the structural design effect on synaptic weight modulation. A synaptic transistor device with an ultra-low subthreshold swing of 89.8 mV/dec has been successfully achieved by optimizing the gate-channel design. Additionally, Further characterizations of the short-term synaptic plasticity and long-term synaptic plasticity of synaptic transistors uncover the flexible modulation of the gate-channel distance-dependent synaptic weight gain behaviors, which span from as low as 6.1 to as high as 87.5 under 50 successive stimuli. The results of this work provide a reliable solution for the design and preparation of high-performance synaptic devices and lay the foundation for high-precision neural networks and intelligent sensing technologies.

关键词： Photonic band gap Neuromorphic engineering Modulation Logic gates Electrolytes Reliability engineering Sensors Transistors Voltage control Integrated circuit reliability

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application of SNNS Model Based On Multi-Dimensional Attention In Drone Radio Frequency Signal Classification

Application of SNNS Model Based On Multi-Dimensional Attenti...

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International Conference on Acoustics, Speech, and Signal Processing (ICASSP)

作者： Zheng Si Chao Liu Jianyu Liu Yinhao Zhou Henan Institute of Advanced Technology Zhengzhou University Zhengzhou Zhongke Institute of Integrated Circuit and System Application School of Computer Science Shanghai Key Laboratory of Data Science Fudan University

Spiking Neural Networks (SNNs) are attracting attention due to their energy efficiency and importance in neuromorphic computing. Therefore, we propose an SNN-based method for classifying drone RF signals in complex electromagnetic environments. Specifically, we designed a new SNNs model called Spiking-EfficientNet based on EfficientNetV2 and improved its performance with a multidimensional attention mechanism. Experimental results demonstrate that Spiking-EfficientNet achieved classification accuracy of 99.13% and 96.02% on the ZK RF and DroneDetectV2 datasets. Importantly, Spiking-EfficientNet not only outperforms traditional Artificial Neural Networks (ANNs) in performance, but also exhibits significantly lower energy consumption. The energy consumption is only 20.1% of EfficientNetV2, 2.56% of VGG11, 10.71% of ResNet18, and 61.15% of MobileNetV2. This study demonstrates the significant potential of SNNs in drone RF signal classification and provides a low-power solution.

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Azaspirobifluorene derivatives enhanced efficiency and lifetime of blue phosphorescent oleds

Azaspirobifluorene derivatives enhanced efficiency and lifet...

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International Conference on display Technology, ICDT 2020

作者： Xia, Rongrong Dou, Dehai Liao, Zhangcheng Guo, Jianfeng Wu, Peng Wang, Zixing Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd Shanghai200072 China

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Piezoresistive MXene/Silk fibroin nanocomposite hydrogel for accelerating bone regeneration by Re-establishing electrical microenvironment

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Bioactive Materials 2023年第4期22卷 1-17页

作者： Zhi-Chao Hu Jia-Qi Lu Tai-Wei Zhang Hai-Feng Liang Hao Yuan Di-Han Su Wang Ding Rui-Xian Lian Yu-Xiang Ge Bing Liang Jian Dong Xiao-Gang Zhou Li-Bo Jiang Department of Orthopaedic Surgery Zhongshan HospitalFudan UniversityShanghai200032China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai200072China Department of Orthopedics Surgery Minhang HospitalFudan UniversityShanghai201100China Key Laboratory for Ultrafine Materials of Ministry of Education Frontiers Science Center for Materiobiology and Dynamic ChemistryResearch Center for Biomedical Materials of Ministry of EducationSchool of Materials Science and EngineeringEast China University of Science and TechnologyShanghai200237China Department of Orthopedic Surgery Zhongshan Hospital(Xiamen)Fudan UniversityXiamen361015China

The electrical microenvironment plays an important role in bone ***,the underlying mechanism by which electrical stimulation(ES)promotes bone regeneration remains unclear,limiting the design of bone microenvironment-specific electroactive ***,by simple co-incubation in aqueous suspensions at physiological temperatures,biocompatible regenerated silk fibroin(RSF)is found to assemble into nanofibrils with aβ-sheet structure on MXene nanosheets,which has been reported to inhibit the restacking and oxidation of *** electroactive hydrogel based on RSF and bioencapsulated MXene is thus prepared to promote efficient bone *** MXene/RSF hydrogel also acts as a piezoresistive pressure transducer,which can potentially be utilized to monitor the electrophysiological *** sequencing is performed to explore the underlying mechanisms,which can activate Ca^(2+)/CALM signaling in favor of the direct osteogenesis *** is found to facilitate indirect osteogenesis by promoting the polarization of M2 macrophages,as well as stimulating the neogenesis and migration of *** improvements in bone regeneration and angiogenesis are observed with MXene/RSF hydrogels under ES in ***,the MXene/RSF hydrogel provides a distinctive and promising strategy for promoting direct osteogenesis,regulating immune microenvironment and neovascularization under ES,leading to re-establish electrical microenvironment for bone regeneration.

关键词： Bone regeneration Electrical microenvironment Regenerated silk fibroin MXene Electrical stimulation

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Simulation Study on the Size Effect and Transient Characteristics of Micro-LEDs

Simulation Study on the Size Effect and Transient Characteri...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Zhuang Wu Kailin Ren Yuan An Luqiao Yin Xiuzhen Lu Aiying Guo Jianhua Zhang School of Microelectronics Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai University Shanghai China

Micro-LED is a promising candidate of the next generation display technology. The size effect caused by sidewall surface traps is a serious issue that restricts its industrialization progress. However, the current research on the size effect of micro-LED is limited to the reduce of quantum efficiency and luminous intensity with decreased pixel size, but there is few research on the mechanism of the transient switching characteristics of Micro-LED affected by sidewall surface traps. In this paper, the size effect of GaN based micro-LEDs is studied by TCAD simulation. The decrease of quantum efficiency is attributed to the depletion effect of the sidewall traps induced by dry etching, the enhancement of SRH non-radiative recombination, and the lateral current component caused by sidewall traps capturing carriers. In addition, the sidewall trap density and trap energy level of micro-LEDs with 10 μm pixel size were varied to study their influence on the transient switching characteristics of micro-LEDs. This work provides a design guideline for the process control of micro-LEDs.

关键词： Photonic band gap Dry etching Process control Switches Radiative recombination Light emitting diodes Energy states

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A deep learning framework for face verification without alignment

A deep learning framework for face verification without alig...

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作者： Fan, Zhongkui Guan, Ye-peng School of Communication and Information Engineering Shanghai University Shanghai China Key Laboratory of Advanced Displays and System Application Ministry of Education Shanghai China

Most of the CNN (convolutional neural networks) methods require alignment, which will affect the efficiency of verification. This paper proposes a deep face verification framework without alignment. First and foremost, the framework consists of two training stages and one testing stage. In the first training stage, the CNN is fully trained on the large face dataset. In the second training stage, embedding triplet is adopted to fine-tune the models. Furthermore, in the testing stage, SIFT (scale invariant feature transform) descriptors are extracted from intermediate pooling results for cascading verification, which effectively improves the accuracy of face verification without alignment. Last but not least, two CNN architectures are designed for different scenarios. The CNN1 (convolutional neural networks 1), with fewer layers and parameters, requires a small amount of memory and computation in training and testing, so it is suitable for real-time system. The CNN2 (convolutional neural networks 2), with more layers and parameters, has excellent face verification. Through the long-term training on WEB-face dataset and experiments on the LFW (labled faces in the wild), YTB (YouTube) datasets, the results show that the proposed method has superior performance compared with some state-of-the-art methods. © 2020, Springer-Verlag GmbH Germany, part of Springer Nature.

关键词： Convolutional neural networks

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Partial etched AlGaN layer on p-GaN HEMT with gate field plate and drain field plate for channel temperature reduction

Partial etched AlGaN layer on p-GaN HEMT with gate field pla...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Shuang Wu Luqiao Yin Kailin Ren Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China

Self-heating effect of gallium nitride high electron mobility transistors (GaN HEMTs) has been a serious problem owing to their high-power and high-frequency operations, thus the method to optimize temperature was studied. In this work, the 2D temperature distribution model of p-GaN HEMT which has gate field plate and drain field plate is presented. Successively, etching AlGaN layer changes the two-dimensional electron gas (2DEG) density and the interface electric field between AlGaN layer and GaN buffer. The quantitative analysis of the etched region parameters which include etching length and etching depth were simulated systematically by using simulation software. The results show that etching AlGaN layer is helpful to reduce the peak temperature of active region and increase off-state breakdown voltage．

关键词： Temperature distribution Analytical models Thermal resistance HEMTs Logic gates Etching Wide band gap semiconductors

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A Novel Monolithically Integrated Structure of GaN-based Micro-LED and its Driver HEMT 18

A Novel Monolithically Integrated Structure of GaN-based Mic...

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18th China International Forum on Solid State Lighting and 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021

作者： An, Yuan Ren, Kailin Xiu, Xueying Xu, Zebin Wu, Zhuang Yin, Luqiao Zhang, Jianhua School of Microelectronics Shanghai University Key Laboratory of Advanced Display and System Applications Shanghai University Shanghai University Shanghai200444 China

ISBN: (纸本)9781665495462

In this work, a novel LED-HEMT integrated device structure with a p-GaN cap layer under the drain electrode of HEMT and one or more InGaN layers inserted between AlGaN/GaN is proposed for the monolithic integration of GaN-based Micro-LED and its driver HEMT. This structure is a promising candidate for the optoelectronic switch in high-speed visible light communications owing to its elimination of metal-interconnects and reduction of parasitic capacitance. By TCAD simulations, the distribution of radiative recombination rate in this structure is investigated and the 2-D integrals of the radiative recombination rate for various device structure designs are compared. It is concluded that the integration structure with InGaN layers provides higher radiative recombination than that without InGaN layers. Device structure parameters are optimized, including Al content in AlGaN barrier layer, In content in InGaN layers, and thickness of InGaN layers. © 2021 IEEE.

关键词： III-V semiconductors

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High-Performance Spiro Bifluoren-Based Charge Generation Layer for the Efficient and Thermal-Stability Organic Light-Emitting Diodes

SSRN

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SSRN 2025年

作者： Xu, Yachen Zhou, Qi Li, Chunya Wu, Ranghui Shi, Wei Lin, Yang Lan, Weixia Wei, Bin School of Mechatronic Engineering and Automation Shanghai University Shanghai200444 China Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China

We have designed and synthesized 2-(9,9'-spirobi[fluoren]-2-yl)-1,10-phenanthroline (SBFPA) and investigated its optoelectrical and thermal characteristics to apply it as a charge generation layer (CGL). The SBFPA-engaged CGL in tandem organic light-emitting diodes (OLEDs) could efficiently generate and balance the injection of carriers. The current efficiency of the tandem red phosphorous OLED reached 31.2 cd/A at a luminance of 10,000 cd/m², which is 2.7 times that of the single OLED (11.6 cd/A). The decomposition temperature of SBFPA was as high as 342 ℃, which guaranteed the thermal stability of the tandem OLED. Moreover, the T95 lifetime (time to 95% of the initial luminance) of the tandem OLED reached 229 h. The charge generation ability of CGL was confirmed through a p-i-n-CGL-structured OLED, where CGL was inserted between the electron injection layer and the cathode to work as the source of electron generation. The maximum power efficiency of the OLED increased 30.9% to 10.46 lm/W, and the maximum luminescence enhanced 41.5% to 23925 cd/m2 compared to the OLED without CGL. The results highlight the promising application of the developed CGL in tandem OLED, offering new possibilities for development of reliable electronics. © 2025, The Authors. All rights reserved.

关键词： Organic light emitting diodes (OLED)

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Efficient blue and color tunable white oled based on platinum complex

Efficient blue and color tunable white oled based on platinu...

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International Conference on display Technology, ICDT 2020

作者： Guo, Jianfeng Liao, Zhangcheng Xia, Rongrong Lin, Hong Wang, Zixing Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Rd. Shanghai 200072 China

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