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IEEE Conference on Energy Internet and Energy system Integration (EI2)

作者： Xiting Peng Yang Yang Xiaoyu Zhang Xiaoling Zhang School of Information Science and Engineering Shenyang University of Technology Liaoning Liaohe Laboratory Shenyang Key Laboratory of Advanced Computing and Application Innovation Shenyang China School of Information Science and Engineering Shenyang University of Technology Shenyang China School of Artificial Intelligence Shenyang University of Technology Shenyang Key Laboratory of Industrial Intelligent Chip and Network System Innovation Application Shenyang China

ISBN: (数字)9798331523527

ISBN: (纸本)9798331523534

Artificial Intelligence (AI) technology plays a key role in driving the development of a green and smart Energy Internet. As one of the application areas of the Energy Internet, lane detection in intelligent transportation systems can provide accurate real-time traffic data, thus supporting intelligent scheduling and resource optimization, reducing congestion, energy consumption, and emissions, and improving overall energy efficiency. Therefore, deep learning-based lane detection methods can further enhance the intelligence level of the Energy Internet and promote its efficient operation. However, current methods often rely on Convolutional Neural Networks (CNNs), which excel at local feature extraction but struggle to capture global information in complex conditions. In varying light, shadows, and obstacles, CNNs struggle to integrate information, leading to inaccuracies, particularly in dense traffic or complex road structures, where diverse local features result in identification errors and hinder lane continuity. This reduces decision-making efficiency and increases energy consumption. Consequently, we present LFKNet, a lane detection framework designed for the fusion of the Lane Focus Mechanism (LFM) and Kolmogorov-Arnold Network (KAN) to enhance accuracy and robustness. It consists of two key components: the Lane Focus Mechanism , which utilizes the geometrical topology of lanes for improved global fea ture extraction in complex scenarios, and the Kolmogorov-Arnold Network, which employs a learnable nonlinear activation function to optimize performance on complex and nonlinear features. The experiments demonstrate that LFKNet achieves 97.00% accuracy with a 97.76% F1-score on the Tusimple dataset. It also achieves a 79.43% F1-score on the CULane dataset. Overall, LFKNet’s performance validates its effectiveness in lane detection, enabling accurate traffic monitoring and analysis while providing reliable data support for the Energy Internet.

关键词： Energy consumption Accuracy Lane detection Decision making Energy Internet system integration Feature extraction Robustness Topology Artificial intelligence

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51-1:Invited Paper:Optimizing Photonic Annealing Technique for Full-Solution-Processed Oxide Thin Film Transistor

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SID Symposium Digest of Technical Papers 2024年第S1期55卷 450-450页

作者： Meng Xu Xifeng Li Key Laboratory of Advanced Display and System Application Ministry of Education Shanghai University Shanghai China 200072

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Performance improvement of DBP-based solar cells by introducing a luminescent sensitizer bis[(4,6-difluorophenyl)-pyridinato-N,C^(2')]c(picolinate)iridium(III)(Flrpic)

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Frontiers of Materials Science 2021年第1期15卷 158-165页

作者： Jie TANG Weiguang LI Juncong CHEN Yanqiong ZHENG Junbiao PENG Jianhua ZHANG Bin WEI Xifeng LI Key Laboratoy of Advanced Display and System Applications(MOE) School of Mechatronic Engineering and AutomationShanghai UniversityShanghai 200072China School of Materials Science and Engineering Shanghai UniversityShanghai 200072China State Key Laboratory of Luminescent Materials and Devices South China University of TechnologyGuangzhou 510640China

In this work,a sky-blue luminescent down-shifting(LDS)layer bis[(4,6-difluorophenyl)-pyridinato-N,C^(2')]c(picolinate)iridium(II)(FIrpic)was inserted between tetraphenyl dibenzoperiflanthene(DBP)and Mo0_(3)as UV-screen and sensitizer for smallmolecule DBP/C_(60)based planar heterojunction(PHJ)solar *** 8-nm Flrpic theshort circuit current(J_(sc))and power conversion efficiency(PCE)of the device areenhanced by 28%and 15%,respectively,probably originating from the re-absorption ofthe photons emitted from *** V_(oc)linearly increases over 1-nm Flrpic,ascribed tothe deeper HOMO level of Flrpic than DBP,while the fill factor continuously declines from 3-to 10-nm *** EQE spectra prove that the J_(sc)is mainly contributed by thephotocurrent generated in DBP and C_(60)*** the FIrpic thickness is 8 nm,the filmsurface is very uniform with the smallest water contact *** impedance spectro-scopy demonstrates that the device resistance gradually increases from 4.1×10^(4)Ω(without Flrpic)to 4.6×10^(4)Ω(with 10-nm Flrpic)with the FIrpic thickness rise,simultaneously the device transits from the insulating state into the conductive statefaster for the thin Flrpic layer than the thick layer.

关键词： small molecule solar cell sky-blue luminescent sensitizer UV-screen Flrpic DBP

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Enhanced Responsivity of Solar Blind Ultraviolet Photodetector by PEALD Deposited Zn-Doped Ga2O3Thin Films

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IEEE Transactions on Electron Devices 2024年第1期71卷 664-669页

作者： Fan, Hui-Chen Wang, Chen Ruan, Yu-Jiao Shen, Kun-Ching Wu, Wan-Yu Wuu, Dong-Sing Lai, Feng-Min Lien, Shui-Yang Zhu, Wen-Zhang Xiamen Institute of Measurement and Testing National Measurement and Testing Center for Flat Panel Display Industry Xiamen361024 China Fuzhou University College of Physics and Information Engineering Fuzhou350108 China National United University Department of Materials Science and Engineering Miaoli36063 Taiwan National Chi Nan University Department of Applied Materials and Optoelectronic Engineering Nantou54561 Taiwan Xiamen University of Technology Xiamen Key Laboratory of Development and Application for Advanced Semiconductor Coating Technology School of Opto-Electronic and Communication Engineering Xiamen361026 China Da-Yeh University Department of Biomedical Engineering Changhua51591 Taiwan

In this article, the tunable Zn-doped Ga2O3 films were obtained by introducing ZnO intercalation during the film deposition using plasma-enhanced atomic layer deposition (PEALD). The effect of the ZnO cycle ratio on the performance of solar-blind photodetectors (PDs) was first analyzed. Compared to the pure Ga2O3, an obviously enhanced performance of Zn-doped Ga2O3 films PDs was observed by the introduction of Zn dopants, especially photocurrent or responsivity, even if the light intensity is low. A high sensitivity of Zn-doped Ga2O3 PD has been achieved with superior photoelectric characteristics for an extremely low dark current of 2.22 × 10-13 A, an ultrahigh light ON/ OFF current ratio of 2.89 × 106, and a satisfactory responsivity of 104 mA/W when the ZnO cycle ratio is 5%. The above excellent results imply that the Zn-doped Ga2O3 PD can be greatly beneficial to the application in deep-ultraviolet (DUV) detection. © 1963-2012 IEEE.

关键词： II-VI semiconductors

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Eco-friendly and degradable red phosphorus nanoparticles for rapid microbial sterilization under visible light

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Journal of Materials Science & Technology 2021年第8期67卷 70-79页

作者： Qian Wu Xiangmei Liu Bo Li Lei Tan Yong Han Zhaoyang Li Yanqin Liang Zhenduo Cui Shengli Zhu Shuilin Wu Yufeng Zheng Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials Hubei Key Laboratory of Polymer MaterialsSchool of Materials Science&EngineeringHubei UniversityWuhan 430062China State Key Laboratory for Mechanical Behavior of Materials School of Materials Science and Engineering.Xi'an Jiaotong UniversityXi'an710049China School of Materials Science&Engineering the Key Laboratory of Advanced Ceramics and Machining Technology by the Ministry of Education of ChinaTianjin UniversityTianjin 300072China State Key Laboratory for Turbulence and Complex System and Department of Materials Science and Engineering College of EngineeringPeking UniversityBeijing 100871China

Pathogens pose a serious challenge to environmental sanitation and a threat to public *** frequent use of chemicals for sterilization in recent years has not only caused secondary damage to the environment but also increased pathogen resistance to drugs,which further threatens public *** address this issue,the use of non-chemical antibacterial means has become a new trend for environmental *** this study,we developed red phosphorus nanoparticles(RPNPs),a safe and degradable photosensitive material with good photocatalytic and photothermal *** red phosphorus nanoparticles were prepared using a template method and *** the irradiation of simulated sunlight for 20 min,the RPNPs exhibited an efficiency of 99.98%in killing Staphylococcus aureus due to their excellent photocatalytic and photothermal *** electron microscopy and ultraviolet–visible spectroscopy revealed that the RPNPs exhibited degradability within eight *** the RPNPs and their degradation products were nontoxic to fibroblast ***,such RPNPs are expected to be used as a new type of low-cost,efficient,degradable,biocompatible,and eco-friendly photosensitive material for environmental disinfection.

关键词： Antibacterial Photocatalytic Photothermal Red phosphorus Photosensitive Nanoparticles

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A novel double PN-junction Isolation Substrate for Isolating High and Low Side HEMTs in Half-bridge Integrated Circuits

A novel double PN-junction Isolation Substrate for Isolating...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： ShiPing Song WenQing Lu JiJun Zhu Kailin Ren Jianhua Zhang School of Microelectronics Shanghai University Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai China

In conventional monolithic integrated half-bridge circuits, the High Side (HS) High Electron Mobility Transistor (HEMT) and Low Side (LS) HEMT can experience mutual interference due to differing substrate potentials. While existing single PN-junction isolation structures have demonstrated effective isolation capabilities, ensuring this isolation typically necessitates the connection of the substrate to Vin, which poses challenges in terms of packaging and heat dissipation. This paper builds upon the foundation of single PN-junction isolation substrate structures and introduces a novel Double PN-junction Isolation Substrate (DJIS) structure. Sentaurus TCAD simulations have substantiated the positive correlation between trench depth and substrate breakdown voltage. The assessment of the isolation performance of DJIS is based on the observation of the impact of different VSW on threshold voltage shifts. It indicate that the DJIS structure ensures robust withstand voltage and isolation capabilities, whether the substrate potential is grounded or connected to Vin. Moreover, the incorporation of a P+ Si layer at the bottom enhances the elastic modulus and hardness of DJIS, thus elevating the device's reliability. The structure proposed in this paper offers a fresh perspective for achieving isolation in monolithic integrated half-bridge circuits.

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Flexible Active-Matrix Micro-LED display Utilizing InSnO TFTs with High Mobility of 39.1 cm2V-1s-1 and Mass-Production Compatible Process

Flexible Active-Matrix Micro-LED Display Utilizing InSnO TFT...

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International Electron Devices Meeting (IEDM)

作者： Zuoxu Yu Yimeng Sang Yuzhen Zhang Yiyang Zhang Runxiao Shi Siyang Liu Tao Tao Xifeng Li Cong Peng Rong Zhang Wangran Wu Zhe Zhuang Bin Liu Weifeng Sun National ASIC System Engineering Research Center School of Integrated Circuits Southeast University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials School of Electronic Science and Engineering Nanjing University Nanjing China School of Integrated Circuits Nanjing University Suzhou China Key Laboratory of Advanced Display and System Applications of the Ministry of Education Shanghai University Shanghai China

ISBN: (数字)9798350365429

ISBN: (纸本)9798350365436

The increasing pursuit of ultrahigh resolution displays has driven the demand for thin film transistors (TFTs) with higher mobility, especially on flexible substrates. In this work, we developed InSnO (ITO) TFTs on flexible substrates and achieved a remarkable average mobility of 39.1 cm 2 V -1 s -1 , via mass-production compatible processes utilizing SiO 2 gate dielectric. Benefiting from the ultra-flat surface and extremely low coefficient of thermal expansion (CTE) of our PI substrate, the ITO TFTs exhibit excellent wafer-scale uniformity, reliable mechanical flexibility, and robust bending durability. Based on the ITO TFTs, we fabricated flexible 2T1C pixel circuits that can operate in both PAM and PWM schemes. The flip-chip micro-LEDs ( $\mu$ -LEDs) were transferred to a flexible PI holder nondestructively with the assistance of UV tape and present superior robustness and endurance under cyclic bending. Moreover, we bonded $\mu$ -LEDs to the 2T1C pixel circuits and demonstrated a flexible active-matrix $\mu$ -LED display. The feasibility of flexible illumination and image control has been verified, providing great potential for high-resolution flexible displays in the future.

关键词： Degradation Performance evaluation Indium tin oxide Circuits Bending Pulse width modulation Thin film transistors Dielectrics Photomicrography Substrates

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Solution-Processed Ta Doped Heterojunction Structure Ito/Zto Thin Film and application for High Electrical and Stable Tfts

SSRN

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SSRN 2023年

作者： Huang, Chuanxin Ding, Xingwei Liu, Yunyun Gao, Ju School of Opto-Electronic Engineering Zaozhuang University Zaozhuang277160 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China

Here, the solution-processed heterojunction structure Ta doped ZnSnO/InSnO (TaZTO/ITO) semiconductor thin film and TFTs have been fabricated on ALD deposited Al2O3. The effects of Ta doping on the structure, thickness, thermal decomposition, contact angle, surface morphology, transmittance, chemical bond states and electrical characteristics of ZTO front layer have been investigated by glancing angle X-ray diffraction (GAXRD), cross sectional transmission electron microscopy (HRTEM), thermogravimetric analysis (TGA), contact angle meter, atomic force microscopy spectrometer (AFM), X-ray photoelectron spectroscopy (XPS) and semiconductor characterization system, respectively. Moreover, the influence of Ta doping in the electrical property and stability of heterojunction structure TaZTO/ITO TFTs has been also analyzed. A proper Ta concentration in the TaZTO back-channel layer can realize stable, dense film and good electrical and stable heterojunction structure TFTs due to inhibiting the generation of defects originated from oxygen vacancies. The heterojunction structure TaZTO/ITO TFTs with the Ta doping of 1%mol shows the best electrical property with the mobility of 4.72 cm2/Vs and the best stability with the threshold voltage shift of 0.95 V under positive bias stress. The strategy has coordinated the relationship between µ and stability effectively, and provide a new way for the development of oxide TFTs technology in the future. © 2023, The Authors. All rights reserved.

关键词： X ray photoelectron spectroscopy

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A Monolithically Integrated Voltage Reference based on AlGaN/GaN Schottky Gate HEMTs

A Monolithically Integrated Voltage Reference based on AlGaN...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Wenqing Lu Luqiao Yin Jianhua Zhang Kailin Ren Shanghai University Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) School of Microelectronics Shanghai University Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai China

ISBN: (数字)9798331541149

ISBN: (纸本)9798331541156

In this work, a monolithically integrated voltage reference based on AlGaN/GaN Schottky Gate High Electron Mobility Transistor (SG-HEMTs) technology is proposed and studied by TCAD simulations. This simple but stable voltage reference consists of only two D-mode transistors with different threshold voltages, which can generate a predictable reference voltage (V REF ) and maintain high stability over a wide range of supply voltage and temperature. It is verified by TCAD simulations that V REF of 1.48V is realized for the power supply voltage range of 3.3 to 10 V. In the temperature range of 300 K to 500 K, the sensitivity of the VREF line is 0.064%/V and the temperature coefficient is 8.21 ppm/°C. The proposed design of the reference voltage source composed of double D-mode SG-HEMT exhibits high feasibility, and can be used in bias and detection circuits to reduce the circuit complexity and chip area.

关键词： Temperature sensors Temperature distribution Circuits HEMTs Logic gates Threshold voltage Generators Wide band gap semiconductors MODFETs Aluminum gallium nitride

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Simultaneous Improvement of Efficiency and Stability of Organic Light-Emitting Diodes Utilizing Bilayered Hole-Injection Layer Composed of Vanadium Oxide and Pedot:Pss

SSRN

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SSRN 2024年

作者： Zhang, Han Zhu, Wenqing Wu, Ming Feng, Zhiyin Huang, Lu Chen, Yipeng Dong, Yijie Yang, Yue School of Materials Science and Engineering Shanghai University 99 Shangda Road Shanghai200444 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Road Shanghai200072 China

The poor hole-injection and consequent carrier imbalance are regarded to be important factors that seriously restricts the device performance of organic light-emitting diodes (OLEDs). In this work, a solution-processable inorganic/organic bilayer composed of vanadium oxide (VOx)/poly(3,4-ethylenedioxythiophene):poly-(styrene sulfonate) (PEDOT:PSS) is reported as a hole-injection layer (HIL) in OLED to customize matched interfacial energy level alignment. This strategy not only facilitates the formation of a smooth PEDOT:PSS overlayer in the VOx/PEDOT:PSS bilayer, but also enhances the hole-injection across the interface through the construction of step-wise energy levels and hence improves carrier balance in device. Consequently, it was found that the device with VOx/PEODT:PSS bilayered HIL exhibited a maximum current efficiency of 67.23 cd A-1 and a maximum external quantum efficiency of 19.17%, which were obviously superior to those of the reference devices with individual VOx HIL (54.85 cd A-1, and 15.58%, respectively) and PEDOT:PSS HIL (58.74 cd A-1, and 16.84%, respectively). Meanwhile, the stability of bilayered HIL-based device was improved substantially because the stable VOx layer effectively prevented the corrosion of indium tin oxide (ITO) anode by acidic PEDOT:*** study highlights a promising bilayer for developing high-performance OLEDs. © 2024, The Authors. All rights reserved.

关键词： Tin oxides

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