检索结果-内蒙古大学图书馆

Controlled growth of vertically stacked In_(2)Se_(3)/WSe_(2) heterostructures for ultrahigh responsivity photodetector

引用

nano Research 2024年第3期17卷 1856-1863页

作者： Cheng Zhang Biyuan Zheng Guangcheng Wu Xueying Liu Jiaxin Wu Chengdong Yao Yizhe Wang Zilan Tang Ying Chen Lizhen Fang Luying Huang Dong Li Shengman Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China

Transition metal dichalcogenides(TMDCs)are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum ***,the limited light absorption efficiency in atomically thin layers significantly hinders photocarrier generation,thereby impairing the optoelectronic performance and hindering practical ***,we successfully synthesized In_(2)Se_(3)/WSe_(2) heterostructures through a typical two-step chemical vapor deposition(CVD)*** In_(2)Se_(3) nanosheet with strong light absorption capability,serving as the light absorption layer,was integrated with the monolayer WSe_(2),enhancing the photosensitivity of WSe_(2) *** laser irradiation with a wavelength of 520 nm,the In_(2)Se_(3)/WSe_(2) heterostructure device shows an ultrahigh photoresponsivity with a value as high as 2333.5 A/W and a remarkable detectivity reaching up to 6.7×10^(12) Jones,which is the highest among almost the reported TMDCs-based heterostructures grown via CVD even some fabricated by mechanical exfoliation(ME).Combing the advantages of CVD method such as large scale,high yield,and clean interface,the In_(2)Se_(3)/WSe_(2) heterostructures would provide a novel path for future high-performance optoelectronic device.

关键词： transition metal dichalcogenides(TMDCs) In_(2)Se_(3) heterostructure photodetector ultrahigh responsivity

来源：评论

学校读者我要写书评

暂无评论

Probing the special angle in twisted bilayer MoS_(2)via angle-dependent scanning tunneling microscopy studies

引用

Science China(physics,Mechanics & Astronomy) 2025年第2期68卷 153-160页

作者： Xueying Liu Shiying Liu Yulong Xiao Chang Xu Jiaxin Wu Kaihui Li Si-Yu Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province Hunan Institute of Optoelectronic Integration and College of Materials Science and EngineeringHunan UniversityChangsha410082China School of Physics and Electronics Hunan Normal UniversityChangsha410081China

Twisted transition metal dichalcogenides(TMDs)homo-bilayers host unique quantum properties,which can be tuned by interlayer twist angleθ.However,the systematic evolution of their typical electronic properties with respect to the twist angleθ,which is crucial for identifying the“special angle”analogous to the“magic angle”of twisted bilayer graphene in correlation physics studies,remains incompletely ***,via scanning tunneling microscopy(STM)and spectroscopy(STS),we investigate the variation of the moirépotential,flat band,and layer polarization characteristics across a wide range of twist angleθin twisted bilayer MoS_(2)(TB-MoS_(2)).The moirépotential of the valence band exhibits a non-monotonic variation withθ,peaking at a maximum value up to 204 me Vatθ~1.7°.Concurrently,at the sameθ,the bandwidth of the flat band at theΓ_(V)point of the valence band attains its minimum,precisely signifying the“special angle”θ_(c)~1.7°in TB-MoS_(2).Interestingly,layer polarization in the moirésuperlattice is spatially visualized through the distribution of local density of states(LDOS)at the energies of bothΓ_(V)and K_(V)points of the valence band,where the polarization degree at theΓ_(V)point demonstrates a close dependency onθ.Our findings deepen understanding of twist-angle effect in TMDs,advancing both fundamental physics and practical application.

关键词： twisted bilayer MoS_(2) flat band moirépotential twist-angle dependence scanning tunneling microscopy

来源：评论

学校读者我要写书评

暂无评论

Ultrafast optical investigation of carrier and spin dynamics in low-dimensional perovskites

引用

Science China(Technological Sciences) 2024年第1期67卷 2-18页

作者： FU JinYue JIANG Ying FANG HongHua Key Laboratory for Micro-Nano Physics and Technology of Hunan Province School of Physics and ElectronicsHunan UniversityChangsha 410012China State Key Laboratory of Precision Measurement Technology and Instruments Department of Precision InstrumentTsinghua UniversityBeijing 100084China

Low-dimensional perovskite(PVK)materials have attracted significant research interest,because of their quantum-confined effect,tunable band gap structures,and higher stability than that of three-dimensional(3D)*** semiconductor optoelectronic devices,high speed and small size are closely *** development of high-speed devices requires researchers to fully understand the properties of materials,especially the dynamic processes such as carrier recombination,separation,and transport,which often play a crucial role in the performance of *** an indispensable part of dynamic research,spin relaxation is also of great significance in studying the properties of materials and explore possible *** halide PVK materials have strong spin-orbit coupling(SOC),which provides a basis for information storage and processing by using spin degrees of ***,studying the carrier and spin dynamics of low-dimensional PVKs is an effective way to understand the internal properties of low-dimensional PVKs *** paper summarizes the latest research progress on the ultrafast carrier and spin dynamics in low-dimensional PVKs,to comprehensively understand their carrier and spin behaviors and present an outlook for relevant studies in this area.

关键词： low-dimensional perovskites carrier dynamics spin dynamics optoelectronic devices

来源：评论

学校读者我要写书评

暂无评论

Combining intrinsic and sliding-induced polarizations for multistates in two-dimensional ferroelectrics

引用

Physical Review B 2025年第8期111卷 L081407-L081407页

作者： Chuhan Tang Zhiqiang Tian Tao Ouyang Anlian Pan Mingxing Chen Key Laboratory for Matter Microstructure and Function of Hunan Province Key Laboratory of Low-Dimensional Quantum Structures and Quantum Control of Ministry of Education School of Physics and Electronics Hunan Normal University Changsha 410081 China Hunan Key Laboratory for Micro-Nano Energy Materials and Device and School of Physics and Optoelectronics Xiangtan University Hunan Xiangtan 411105 China Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and Engineering Hunan University Changsha 410082 China State Key Laboratory of Powder Metallurgy Central South University Changsha 410083 China

Going beyond the bistability paradigm of the charge polarization in ferroelectrics is highly desired for ferroelectric (FE) memory devices toward ultrahigh-density information storage. Here, we propose to build multistates by combining the intrinsic and sliding-induced polarizations. The physics is that there is at least one order of magnitude difference in the energy barriers between these two types of polarizations, which leads to a significant difference in the electric fields for reversing the polarization. This difference, along with the symmetry breaking, allows for a unique flipping mechanism involving layer-by-layer sliding followed by layer-by-layer flipping during the transformation of the multistates. As a result, six and ten switchable states can be achieved for the 1T″ bilayers and trilayers, respectively. We further illustrate the concept in H-stacking bilayers and trilayers of 1T″ transition-metal dichalcogenides by first-principles calculations. Our study provides a route to design polarization multistates for developing next-generation memory devices.

关键词： Ferroelectricity

来源：评论

学校读者我要写书评

暂无评论

Perovskite sensitized 2D photodiodes

引用

Light(Science & Applications) 2023年第6期12卷 951-952页

作者： Dong Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsHunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringHunan UniversityChangshaChina

A new type of perovskite sensitized programmable WSe_(2) photodiode is constructed based on MAPbI_(3)/WSe_(2) heterojunction,presenting flexible reconfigurable characteristics and prominent optoelectronic performances.

关键词： heterojunction optoelectronic reconfigurable

来源：评论

学校读者我要写书评

暂无评论

Two-dimensional optoelectronic devices for silicon photonic integration

引用

Journal of Materiomics 2023年第3期9卷 551-567页

作者： Zilan Tang Shula Chen Dong Li Xiaoxia Wang Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsHunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringHunan UniversityChangshaHunan410082China

With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's *** material systems and new device architectures are considered promising strategies for this ***-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength *** this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic *** this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon ***,the basic op-tical properties of 2D materials and heterostructures are summarized in the first ***,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in ***,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.

关键词： Two-dimensional materials Silicon photonics Heterogeneous integration Optoelectronic devices

来源：评论

学校读者我要写书评

暂无评论

Epitaxial van der Waals contacts for low schottky barrier MoS_(2) field effect transistors

引用

nano Research 2023年第9期16卷 11832-11838页

作者： Huawei Liu Lizhen Fang Xiaoli Zhu Chenguang Zhu Xingxia Sun Gengzhao Xu Biyuan Zheng Ying Liu Ziyu Luo Hui Wang Chengdong Yao Dong Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China Hunan Institute of Optoelectronic Integration Hunan UniversityChangsha 410082China Suzhou Institute of Nano-tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China

Small contact resistance and low Schottky barrier height(SBH)are the keys to energy-efficient electronics and ***-dimensional(2D)semiconductors-based field effect transistors(FETs),holding great promise for next-generation information circuits,still suffer from poor contact quality at the metal–semiconductor junction interface,which severely hinders their further ***,a novel contact strategy is proposed,where Bi_(2)Te_(3)nanosheets with high conductivity were in-situ epitaxially grown on MoS_(2)as van der Waals contacts,which can effectively avoid the damage to MoS_(2)caused during the device manufacturing process,leading to a high-performance MoS_(2)***,the small work function difference between Bi_(2)Te_(3)and MoS_(2)(Bi_(2)Te_(3):4.31 eV,MoS_(2):4.37 eV,measured by Kelvin probe force microscopy(KPFM)),enables small band bending and Ohmic contact at the junction *** characterizations indicate that the MoS_(2)FET device with Bi_(2)Te_(3)contacts possesses a high current on/off ratio(5×107),large effective carrier mobility(90 cm^(2)/(V·s)),and low flat-band SBH(60 meV),which is favorable as compared with MoS_(2)FET with traditional Cr/Au electrodes contacts,and superior to the vast majority of the reported chemical vapor deposition(CVD)MoS_(2)-based FET *** demonstration of epitaxial van der Waals Bi_(2)Te_(3)contacts will facilitate the application of 2D MoS_(2)nanosheet in next-generation low-power consumption electronics and optoelectronics.

关键词： heterojunction van der Waals epitaxial mobility Schottky barrier transistors

来源：评论

学校读者我要写书评

暂无评论

Phonon transport properties of Janus Pb_(2)XAs(X=P,Sb,and Bi)monolayers:A DFT study

引用

Chinese physics B 2024年第4期33卷 71-76页

作者：耿嘉鑫张培汤准韵欧阳滔 School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials and Device Xiangtan UniversityXiangtan 411105China Hunan Provincial Key Laboratory of Intelligent Sensors and Advanced Sensor Materials School of Physics and ElectronicsHunan University of Science and TechnologyXiangtan 411201China

Grasping the underlying mechanisms behind the low lattice thermal conductivity of materials is essential for the efficient design and development of high-performance thermoelectric materials and thermal barrier coating *** this paper,we present a first-principles calculations of the phonon transport properties of Janus Pb_(2)PAs and Pb_(2)SbAs *** materials possess low lattice thermal conductivity,at least two orders of magnitude lower than graphene and *** room temperature thermal conductivity of Pb_(2)SbAs(0.91 W/m K)is only a quarter of that of Pb_(2)PAs(3.88 W/m K).We analyze in depth the bonding,lattice dynamics,and phonon mode level information of these ***,it is determined that the synergistic effect of low group velocity due to weak bonding and strong phonon anharmonicity is the fundamental cause of the intrinsic low thermal conductivity in these Janus *** regular residual analysis further indicates that the four-phonon processes are limited in Pb_(2)PAs and Pb_(2)SbAs,and the three-phonon scattering is sufficient to describe their *** this study,the thermal transport properties of Janus Pb_(2)PAs and Pb_(2)SbAs monolayers are illuminated based on fundamental physical mechanisms,and the low lattice thermal conductivity endows them with the potential applications in the field of thermal barriers and thermoelectrics.

关键词： lattice thermal conductivity weak bonding phonon anharmonicity first principles calculations

来源：评论

学校读者我要写书评

暂无评论

Exciton luminescence and many-body effect of monolayer WS2 at room temperature

引用

Chinese physics B 2022年第5期31卷 670-676页

作者： Jian-Min Wu Li-Hui Li Wei-Hao Zheng Bi-Yuan Zheng Zhe-Yuan Xu Xue-Hong Zhang Chen-Guang Zhu Kun Wu Chi Zhang Ying Jiang Xiao-Li Zhu Xiu-Juan Zhuang Key Laboratory for Micro-Nano Physics and Technology of Hunan Province School of Physics and ElectronicsHunan UniversityChangsha 410082China College of Materials Science and Engineering Hunan UniversityChangsha 410082China

Monolayer transition metal dichalcogenides favor the formation of a variety of excitonic quasiparticles,and can serve as an ideal material for exploring room-temperature many-body effects in two-dimensional ***,using mechanically exfoliated monolayer WS;and photoluminescence(PL)spectroscopy,exciton emission peaks are confirmed through temperature-dependent and electric-field-tuned PL *** dependence of exciton concentration on the excitation power density at room temperature is quantitatively *** concentrations covering four orders of magnitude are divided into three *** the low carrier concentration stage,the system is dominated by excitons,with a small fraction of trions and localized *** the high carrier concentration stage,the localized exciton emission from defects coincides with the emission peak position of trions,resulting in broad spectral characteristics at room temperature.

关键词： transition metal dichalcogenides photoluminescence localized exciton exciton density

来源：评论

学校读者我要写书评

暂无评论

Plasmonically engineered light-matter interactions in Aunanoparticle/MoS_(2) heterostructures for artificial optoelectronic synapse

引用

nano Research 2022年第4期15卷 3539-3547页

作者： Zhuoran Luo Yunfei Xie Ziwei Li Yajuan Wang Lihui Li Ziyu Luo Chenguang Zhu Xin Yang Ming Huang Jianhua Huang Delang Liang Xiaoli Zhu Dong Li Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province College of Materials Science and EngineeringHunan UniversityChangsha 410082China State Key Laboratory of Artificial Microstructure&Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100084China

Optoelectronic synaptic elements are emerging functional devices for the vigorous development of advanced neuromorphic computing technology in the post-Moore ***,optoelectronic devices based on transition metal dichalcogenides(TMDs)are limited to their poor mobilities and weak light-matter interactions,which still hardly exhibit superior device performances in the application of artificial ***,we demonstrate the successful fabrication of Au nanoparticle-coupled MoS_(2)heterostructures via chemical vapor deposition(CVD),where the light absorption of MoS_(2)is greatly enhanced and engineered by plasmonic *** electrons are excited from Au nanoparticles,and then injected into MoS_(2)semiconductors under the light *** plasmonically-engineered photo-gating effect at the metal-semiconductor junction is demonstrated to create optoelectronic devices with excellent synaptic behaviors,especially in ultra-sensitive excitatory postsynaptic current(EPSC,9.6×10^(-3)nA@3.4 nW·cm^(-2)),ultralow energy consumption(34.7 pJ),long-state retention time(>1,000 s),and tunable synaptic plasticity *** material system of Au-nanoparticles coupled TMDs presents unique advantages for building artificial synapses,which may lead the future development of neuromorphic electronics in optical information sensing and learning.

关键词： synapse optoelectronic device surface plasmon photo-gating MoS_(2)

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：